NXP BT 137S-600D NXP Datasheet

D

P

A

K

BT137S-600D

4Q Triac

12 June 2014 Product data sheet

1. General description

Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK)
surface-mountable plastic package intended for use in general purpose bidirectional
switching and phase control applications, where high sensitivity is required in all four
quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.

2. Features and benefits

Direct triggering from low power drivers and logic ICs

•

High blocking voltage capability

•

Low holding current for low current loads and lowest EMI at commutation

•

Planar passivated for voltage ruggedness and reliability

•

Surface-mountable package

•

Triggering in all four quadrants

•

Very sensitive gate

•

3. Applications

General purpose motor control

•

General purpose switching

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DRM

I

TSM

I

T(RMS)

Static characteristics

GT

repetitive peak off­state voltage

non-repetitive peak on­state current

RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1;

gate trigger current

full sine wave; T

tp = 20 ms; Fig. 4; Fig. 5

Fig. 2; Fig. 3

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

j(init)

= 25 °C;

- - 600 V

- - 65 A

- - 8 A

- 2.5 5 mAI

- 3.5 5 mA

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3

2

mb

1

sym051

T1

G

T2

BT137S-600D

4Q Triac

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 3.5 5 mA

VD = 12 V; IT = 0.1 A; T2- G+;

- 6.5 10 mA

Tj = 25 °C; Fig. 7

I

H

holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1.5 10 mA

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb T2 mounting base; main

terminal 2

DPAK (SOT428)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BT137S-600D DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped)

SOT428

BT137S-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 12 June 2014 2 / 13

NXP Semiconductors

BT137S-600D

4Q Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

I

T(RMS)

TSM

repetitive peak off-state voltage - 600 V

RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1;

- 8 A

Fig. 2; Fig. 3

non-repetitive peak on-state
current

full sine wave; T

tp = 20 ms; Fig. 4; Fig. 5

j(init)

= 25 °C;

- 65 AI

I2t I2t for fusing

dIT/dt rate of rise of on-state current

I

P

P

T

T

GM

GM

G(AV)

stg

j

peak gate current - 2 A

peak gate power - 5 W

average gate power over any 20 ms period - 0.5 W

storage temperature -40 150 °C

junction temperature - 125 °C

full sine wave; T

j(init)

= 25 °C;

- 71 A

tp = 16.7 ms

tp = 10 ms; SIN - 21

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

- 50 A/µs

T2+ G+

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

- 50 A/µs

T2+ G-

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

- 50 A/µs

T2- G-

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

- 10 A/µs

T2- G+

A2s

BT137S-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 12 June 2014 3 / 13

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Tmb(°C)

- 50 1501000 50

003aae689

4

6

2

8

10

I

T(RMS)

(A)

0

003aae692

0

5

10

15

20

25

10

- 2

10

- 1

1 10

surge duration (s)

I

T(RMS)

(A)

003aae690

4

8

12

P

tot

(W)

0

I

T(RMS)

(A)

0 1084 62

conductio

n

angle

(degrees)

for

m

facto

r

a

3

0

6

0

9

0
120
180

4

2.8

2.2

1.9

1.5

7

α

α

= 180

°

120°

90°

60°

30

°

BT137S-600D

4Q Triac

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

f = 50 Hz
Tmb ≤ 102 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

α = conduction angle
a = form factor = I

T(RMS)/IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

BT137S-600D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 12 June 2014 4 / 13