NXP BT 137B/800 Datasheet

BT137B-800

D2PAK

1. Product profile

1.1 General description

1.2 Features and benefits

4Q Triac

Rev. 4 — 29 March 2011 Product data sheet

Planar passivated four quadrant triac in a SOT404 (DPAK) surface-mountable plastic
package intended for use in bidirectional switching and phase control applications.

 High blocking voltage capability
 Less sensitive gate for improved noise

immunity

 Planar passivated for voltage

ruggedness and reliability

 Surface-mountable package
 Triggering in all four quadrants

1.3 Applications

 General purpose motor control  General purpose switching

1.4 Quick reference data

Ta ble 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DRM

I

TSM

I

T(RMS)

Static characteristics

I

GT

repetitive peak
off-state voltage

non-repetitive
peak on-state
current

RMS on-state
current

gate trigger
current

full sine wave; T

= 20 ms; see Figure 4;

t

p

see Figure 5
full sine wave; Tmb≤ 102 °C;

see Figure 1
see Figure 3

VD=12V; IT= 0.1 A; T2+ G+;
T

=25°C; see Figure 7

j

=12V; IT= 0.1 A; T2+ G-;

V

D

=25°C; see Figure 7

T

j

V

=12V; IT= 0.1 A; T2- G-;

D

Tj=25°C; see Figure 7

=12V; IT= 0.1 A; T2- G+;

V

D

Tj=25°C; see Figure 7

; see Figure 2;

j(init)

=25°C;

--800V

--65A

--8A

-535mA

-835mA

-1135mA

- 3070mA

NXP Semiconductors

s

2. Pinning information

BT137B-800

4Q Triac

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1
2 T2 main terminal 2
3 G gate

mb

T2

ym051

mb T2 mounting base; main terminal

2

2

13

SOT404 (D2PAK)

3. Ordering information

Table 3. Ordering information

Type number Package

BT137B-800 D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads

Name Description Version

(one lead cropped)

T1

G

SOT404

BT137B-800 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 4 — 29 March 2011 2 of 13

NXP Semiconductors

4. Limiting values

BT137B-800

4Q Triac

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

I

T(RMS)

I

TSM

2

t I

I

/dt rate of rise of on-state current IT=12A; IG= 0.2 A; dIG/dt = 0.2 A/µs;

dI

T

I

GM

V

GM

P

GM

P

G(AV)

T

stg

T

j

repetitive peak off-state voltage - 800 V
RMS on-state current full sine wave; Tmb≤ 102 °C;

-8A

see Figure 1; see Figure 2; see Figure 3

non-repetitive peak on-state
current

2

t for fusing tp= 10 ms; sin-wave pulse - 21 A2s

full sine wave; T

= 20 ms; see Figure 4; see Figure 5

t

p

full sine wave; T
t

=16.7ms

p

j(init)

j(init)

=25°C;

=25°C;

-65A

-71A

-50A/µs

T2+ G+

=12A; IG= 0.2 A; dIG/dt = 0.2 A/µs;

I

T

-50A/µs

T2+ G­I

=12A; IG= 0.2 A; dIG/dt = 0.2 A/µs;

T

-50A/µs

T2- G-

=12A; IG= 0.2 A; dIG/dt = 0.2 A/µs;

I

T

-10A/µs

T2- G+
peak gate current - 2 A
peak gate voltage - 5 V
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature -40 150 °C
junction temperature - 125 °C

10

I

T(RMS)

(A)

8

6

4

2

0

−50 150100050

003aae689

Tmb (°C)

I

T(RMS)

(A)

25

20

15

10

5

0

−2

10

−1

10

1 10

003aae692

surge duration (s)

f = 50 Hz
Tmb ≤ 102 °C

Fig 1. RMS on-state current as a function of mounting

base temperature; maximum values

BT137B-800 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 4 — 29 March 2011 3 of 13

Fig 2. RMS on-state current as a function of surge

duration; maximum values

NXP Semiconductors

BT137B-800

4Q Triac

12

conduction

P
(W)

angle

(degrees)

tot

8

4

0

0 108462

30
60

90
120
180

form

factor

a
4

2.8

2.2

1.9

1.57

α

Fig 3. Total power dissipation as a function of RMS on-state current; maximum values

3

10

I

TSM

(A)

2

10

= 180

α

120

90

60

30

I

°

°

°

°

T

T

j(init)

°

I

T(RMS)

t

p

= 25 °C max

003aae690

(A)

003aae691

I

TSM

t

(1)

(2)

10

−5

10

≤ 20 ms

t

p

(1) dI

/dt limit

T

−4

10

−3

10

−2

10

tp (s)

−1

10

(2) T2- G+ quadrant limit

Fig 4. Non-repetitive peak on-state current as a function of pulse width; maximum values

BT137B-800 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 4 — 29 March 2011 4 of 13