BT137-800E
4Q Triac
Rev.01 - 16 March 2018 Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78(TO-220AB) plastic package
intended for use in general purpose bidirectional switching and phase control applications. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
2. Features and benets
• Direct triggering from low power drivers and logic ICs
• High blocking voltage capability
• Low holding current for low current loads and lowest EMI at commutation
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate
• Triggering in all four quadrants
3. Applications
• General purpose motor control
• General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
V
DRM
I
T(RMS)
I
TSM
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
I
H
repetitive peak o-state
voltage
RMS on-state current full sine wave; T
Fig. 1; Fig. 2; Fig. 3
non-repetitive peak on-
state current
gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.5 20 mA
full sine wave; T
tp = 20 ms; Fig. 4; Fig. 5
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
≤ 102 °C;
mb
= 25 °C;
j(init)
800 V
8 A
65 A
- 2.5 10 mA
- 4 10 mA
- 5 10 mA
- 11 25 mA
WeEn Semiconductors
12mb3
sym051
T1
T2
BT137-800E
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
4Q Triac
3 G gate
mb T2 mounting base; main terminal 2
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BT137-800E TO-220AB plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
7. Marking
Table 4. Marking codes
Type number Marking codes
BT137-800E BT137-800E
G
SOT78
BT137-800E
Product data sheet
All information
provided in
16
this document
March
is
subject to
legal
disclaimers.
2018 2 / 13
©
WeEn Semiconductors Co., Ltd. 2018. All rights
reserved
WeEn Semiconductors
BT137-800E
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
V
DRM
I
T(RMS)
I
TSM
I2t I2t for fusing tp = 10 ms; SIN 21 A2s
repetitive peak o-state
voltage
RMS on-state current full sine wave; T
Fig 1; Fig 2; Fig 3
non-repetitive peak on state current
full sine wave; T
tp = 20 ms; Fig 4; Fig 5
full sine wave; T
tp = 16.7 ms
≤ 102 °C;
mb
= 25 °C;
j(init)
= 25 °C;
j(init)
800 V
8 A
65 A
71 A
/dt rate of rise of on-state
dIT
current
IGM
P
P
Tstg
Tj
GM
G(AV)
peak gate current 2 A
peak gate power 5 W
average gate power over any 20 ms period 0.5 W
storage temperature -40 to 150 °C
junction temperature 125 °C
IG = 20 mA; T2+ G+ 50 A/μs
IG = 20 mA; T2+ G- 50 A/μs
IG = 20 mA; T2- G- 50 A/μs
IG = 50 mA; T2- G+ 10 A/μs
BT137-800E
Product data sheet
All information
provided in
16
this document
March
is
subject to
legal
disclaimers.
2018 3 / 13
©
WeEn Semiconductors Co., Ltd. 2018. All rights
reserved
WeEn Semiconductors
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
BT137-800E
4Q Triac
f = 50 Hz; Tmb ≤ 102 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
BT137-800E
Product data sheet
All information
provided in
16
this document
March
is
subject to
legal
disclaimers.
2018 4 / 13
©
WeEn Semiconductors Co., Ltd. 2018. All rights
reserved
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