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DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
BST50; BST51; BST52
NPN Darlington transistors
Product data sheet
Supersedes data of 2001 Feb 20
2004 Dec 09
Page 2
NXP Semiconductors Product data sheet
2
3
NPN Darlington transistors BST50; BST51; BST52
FEATURES
• High current (max. 0.5 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as :
– Print hammer
– Solenoid
– Relay and lamp driving.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic pack age.
complements: BST60, BST61 and BST62.
PNP
MARKING
T YPE NUMBER MARKING CODE
BST50 AS1
BST51 AS2
BST52 AS3
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
Fig.1 Simplified outline (SOT89) and symbol.
1
sym080
ORDERING INFORMATION
T YPE NUMBER
BST50 SC-62 plastic surface mounted package; collector pad for good heat
BST51
BST52
NAME DESCRIPTION VERSION
transfer; 3 leads
PACKAGE
SOT89
2004 Dec 09 2
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NXP Semiconductors Product data sheet
NPN Darlington transistors BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CES
EBO
C
CM
B
tot
j
amb
stg
collector-base voltage open emitter
BST50 − 60 V
BST51 − 80 V
BST52 − 90 V
collector-emitter voltage VBE = 0 V
BST50 − 45 V
BST51 − 60 V
BST52 − 80 V
emitter-base voltage open collector − 5 V
collector current (DC) − 1 A
peak collector current − 2 A
base current (DC) − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
junction temperature − 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 6 cm2.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th(j-a)
th(j-s)
thermal resistance from junction to ambient note 1 96 K/W
thermal resistance from junction to soldering point 16 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated, mounting pad for collector 6 cm2.
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For
2004 Dec 09 3
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NXP Semiconductors Product data sheet
NPN Darlington transistors BST50; BST51; BST52
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
off
collector-emitter cut-off current
BST50 VBE = 0 V; VCE = 45 V − − 50 nA
BST51 VBE = 0 V; VCE = 60 V − − 50 nA
BST52 VBE = 0 V; VCE = 80 V − − 50 nA
emitter-base cut-off current IC = 0 A; VEB = 4 V − − 50 nA
DC current gain VCE = 10 V; note 1; (see Fig.2)
IC = 150 mA 1 000 − −
IC = 500 mA 2 000 − −
collector-emitter saturation
voltage
IC = 500 mA; IB = 0.5 mA − − 1.3 V
IC = 500 mA; IB = 0.5 mA;
T
= 150 °C
j
− − 1.3 V
base-emitter saturation vo ltage IC = 500 mA; IB = 0.5 mA − − 1.9 V
transition frequency IC = 500 mA; VCE = 5 V;
= 100 MHz
f
turn-on time I
turn-off time − 1 500 − ns
= 500 mA; I
Con
= −0.5 mA
I
Boff
= 0.5 mA;
Bon
− 200 − MHz
− 400 − ns
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Dec 09 4
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NXP Semiconductors Product data sheet
V
V
NPN Darlington transistors BST50; BST51; BST52
5000
handbook, full pagewidth
h
FE
4000
3000
2000
1000
0
−1
10
VCE = 10 V.
1
10 10
Fig.2 DC current gain; typical values.
MGD838
2
IC (mA)
3
10
dbook, full pagewidth
oscilloscope
Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = −1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
BB
R
(probe)
450 Ω
V
i
B
R2
R1
CC
R
C
V
(probe)
o
DUT
MLB826
450 Ω
oscilloscope
Fig.3 Test circuit for switching times.
2004 Dec 09 5
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NXP Semiconductors Product data sheet
9
NPN Darlington transistors BST50; BST51; BST52
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
E
e
e
1
1.5
2004 Dec 09 6
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NXP Semiconductors Product data sheet
NPN Darlington transistors BST50; BST51; BST52
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the produc t specification.
Notes
1. Please consult the most recently issued document before initiating or comple ting a design.
2. The product status of device(s) desc ribed in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Dec 09 7
60134) may cause permanent damage to
Page 8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property right s.
Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 09 Docum ent order number: 9397 750 13877
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