NXP BSS 138 PS NXP Datasheet

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

Rev. 1 — 2 November 2010 Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

1.2 Features and benefits

 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 AEC-Q101 qualified

1.3 Applications

 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V
V
I

D

R

DS
GS

DSon

drain-source voltage T
gate-source voltage T
drain current T

drain-source on-state
resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm

[2] Pulse test: t

2

.

≤ 300 μs; δ≤0.01.

p

=25°C--60V

amb

=25°C--±20 V

amb

=25°C;

amb

=10V

V

GS

Tj=25°C;
V

=10V;

GS

= 300 mA

I

D

[1]

--320mA

[2]

-0.91.6Ω

NXP Semiconductors

1

2. Pinning information

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1S1source1
2 G1 gate1
3D2drain2
4S2source2
5 G2 gate2
6D1drain1

3. Ordering information

Table 3. Ordering information

Type number Package

BSS138PS SC-88 plastic surface-mounted package; 6 leads SOT363

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

D

S

132

4

56

Name Description Version

1

1

G1S

D

2

2

msd90

G

2

4. Marking

Table 4. Marking codes

Type number Marking code

BSS138PS NZ*

[1] * = placeholder for manufacturing site code

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

DS

V

GS

I

D

I

DM

drain-source voltage T
gate-source voltage T

=25°C-60V

amb

=25°C-±20 V

amb

drain current VGS=10V

T

=25°C-320mA

amb

=100°C-200mA

T

amb

peak drain current T

amb

=25°C;

single pulse; t

≤ 10 μs

p

[1]

[1]

-1.2A

BSS138PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 2 November 2010 2 of 16

NXP Semiconductors

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

tot

Source-drain diode

I

S

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

total power dissipation T

source current T

total power dissipation T

=25°C

amb

=25°C-960mW

T

sp

=25°C

amb

=25°C

amb

junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

[2]

-280mW

[1]

-320mW

[1]

-290mA

[2]

-420mW

120

P

der

(%)

80

40

0

−75 17512525 75−25

P

tot

der

----------------------- -

P

tot 25°C()

100 %×= I

P

017aaa001

T

(°C)

amb

Fig 1. Normalized total power dissipation as a

function of ambient temperature

120

I

der

(%)

80

40

0

−75 17512525 75−25

der

I

D

------------------- -

I

D25° C()

100 %×=

017aaa002

T

(°C)

amb

Fig 2. Normalized continuous drain current as a

function of ambient temperature

BSS138PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 2 November 2010 3 of 16

NXP Semiconductors

017aaa122

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

10

I

D

(A)

1

−1

10

−2

10

−3

10

−1

10

I

= single pulse

DM

= 100 μs

(1) t

p

=1ms

(2) t

p

=10ms

(3) t

p

(4) DC; T
(5) t
(6) DC; T

sp

= 100 ms

p

amb

=25°C

=25°C; drain mounting pad 1 cm

Fig 3. Per transistor: Safe operating area ; junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

Limit R

DSon

2

= VDS/I

D

(1)

(2)

(3)

(4)

(5)

(6)

101

VDS (V)

2

10

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

thermal resistance from
junction to ambient

in free air

in free air

[1]

- 390 445 K/W

[2]

- 340 390 K/W

- - 130 K/W

[1]

- - 300 K/W

2

.

BSS138PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 2 November 2010 4 of 16

NXP Semiconductors

017aaa034

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

3

10

Z

(K/W)

Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

duty cycle = 1

th(j-a)

10

2

10

1

−3

10

0.5

0.25

0.1

0

0.75

0.33

0.2

0.05

0.02

0.01

FR4 PCB, standard footprint

typical values

−2

−1

10

10110

2

10

tp (s)

3

10

tp (s)

017aaa035

3

10

3

10

th(j-a)

10

2

10

1

−3

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.1

0.05

0

0.2

0.02

0.01

−2

Z

(K/W)

FR4 PCB, mounting pad for drain 1 cm

−1

10

2

10110

2

10

Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BSS138PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 2 November 2010 5 of 16

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

g

fs

Dynamic characteristics

Q

G(tot)

Q

GS

Q

GD

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

[1] Pulse test: tp≤ 300 μs; δ≤0.01.

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

drain-source breakdown
voltage

gate-source threshold
voltage

drain leakage current VDS=60V; VGS=0V

gate leakage current VGS= ±20 V; VDS= 0 V - - 100 nA
drain-source on-state

resistance

forward
transconductance

total gate charge ID=300mA;
gate-source charge - 0.14 - nC
gate-drain charge - 0.24 - nC
input capacitance VGS=0V; VDS=10V;
output capacitance - 7 - pF
reverse transfer

capacitance
turn-on delay time VDS=50V;
rise time -3-ns
turn-off delay time - 9 20 ns
fall time - 4 - ns

source-drain voltage IS=115mA; VGS= 0 V 0.47 0.75 1.1 V

ID=10μA; VGS=0V 60--V

ID=250μA; VDS=V

=25°C --1μA

T

j

= 150 °C --10μA

T

j

GS

0.9 1.2 1.5 V

[1]

VGS=5V; ID=50mA - 1 2 Ω

=10V; ID=300mA - 0.9 1.6 Ω

V

GS

VDS=10V; ID= 200 mA

[1]

- 700 - mS

- 0.72 0.8 nC
VDS=30V;
VGS=4.5V

- 3850pF
f=1MHz

-4-pF

- 26ns
RL=250Ω;

=10V;

V

GS

=6Ω

R

G

BSS138PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 2 November 2010 6 of 16