NXP BSS 138 PS NXP Datasheet

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

Rev. 1 — 2 November 2010 Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible  Very fast switching  Trench MOSFET technology  AEC-Q101 qualified

1.3 Applications

 Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V V I

DS GS

DSon

drain-source voltage T gate-source voltage T drain current T

drain-source on-state resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad

for drain 1 cm

[2] Pulse test: t

≤ 300 μs; δ≤0.01.

=25°C--60V

amb

=25°C--±20 V

amb

=25°C;

amb

=10V

Tj=25°C; V

=10V;

= 300 mA

[1]

--320mA

[2]

-0.91.6Ω

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1S1source1 2 G1 gate1 3D2drain2 4S2source2 5 G2 gate2 6D1drain1

3. Ordering information

Table 3. Ordering information

Type number Package

BSS138PS SC-88 plastic surface-mounted package; 6 leads SOT363

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

132

Name Description Version

G1S

msd90

4. Marking

Table 4. Marking codes

Type number Marking code

BSS138PS NZ*

[1] * = placeholder for manufacturing site code

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

drain-source voltage T gate-source voltage T

=25°C-60V

amb

=25°C-±20 V

amb

drain current VGS=10V

=25°C-320mA

amb

=100°C-200mA

amb

peak drain current T

amb

=25°C;

single pulse; t

≤ 10 μs

[1]

-1.2A

Product data sheet Rev. 1 — 2 November 2010 2 of 16

NXP Semiconductors

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

Source-drain diode

Per device

tot

amb

stg

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

total power dissipation T

source current T

total power dissipation T

=25°C

amb

=25°C-960mW

=25°C

amb

=25°C

amb

junction temperature 150 °C ambient temperature −55 +150 °C storage temperature −65 +150 °C

[2]

-280mW

[1]

-320mW

[1]

-290mA

[2]

-420mW

120

der

(%)

−75 17512525 75−25

tot

der

----------------------- -

tot 25°C()

100 %×= I

017aaa001

(°C)

amb

Fig 1. Normalized total power dissipation as a

function of ambient temperature

120

der

(%)

−75 17512525 75−25

der

------------------- -

D25° C()

100 %×=

017aaa002

(°C)

amb

Fig 2. Normalized continuous drain current as a

function of ambient temperature

Product data sheet Rev. 1 — 2 November 2010 3 of 16

NXP Semiconductors

017aaa122

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

(A)

−1

−2

−3

−1

= single pulse

= 100 μs

(1) t

=1ms

(2) t

=10ms

(3) t

(4) DC; T (5) t (6) DC; T

= 100 ms

amb

=25°C

=25°C; drain mounting pad 1 cm

Fig 3. Per transistor: Safe operating area ; junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

Limit R

DSon

= VDS/I

(1)

(2)

(3)

(4)

(5)

(6)

101

VDS (V)

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

th(j-a)

th(j-sp)

Per device

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

thermal resistance from junction to ambient

thermal resistance from junction to solder point

thermal resistance from junction to ambient

in free air

[1]

- 390 445 K/W

[2]

- 340 390 K/W

- - 130 K/W

[1]

- - 300 K/W

Product data sheet Rev. 1 — 2 November 2010 4 of 16

NXP Semiconductors

017aaa034

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

(K/W)

Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

duty cycle = 1

th(j-a)

−3

0.5

0.25

0.1

0.75

0.33

0.2

0.05

0.02

0.01

FR4 PCB, standard footprint

typical values

−2

−1

10110

tp (s)

017aaa035

th(j-a)

−3

duty cycle = 1

0.75

0.5

0.33

0.25

0.1

0.05

0.2

0.02

0.01

−2

(K/W)

FR4 PCB, mounting pad for drain 1 cm

−1

10110

Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

Product data sheet Rev. 1 — 2 November 2010 5 of 16

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Static characteristics

(BR)DSS

GS(th)

DSS

GSS

DSon

Dynamic characteristics

G(tot)

iss

oss

rss

d(on)

d(off)

Source-drain diode

[1] Pulse test: tp≤ 300 μs; δ≤0.01.

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

drain-source breakdown voltage

gate-source threshold voltage

drain leakage current VDS=60V; VGS=0V

gate leakage current VGS= ±20 V; VDS= 0 V - - 100 nA drain-source on-state

resistance

forward transconductance

total gate charge ID=300mA; gate-source charge - 0.14 - nC gate-drain charge - 0.24 - nC input capacitance VGS=0V; VDS=10V; output capacitance - 7 - pF reverse transfer

capacitance turn-on delay time VDS=50V; rise time -3-ns turn-off delay time - 9 20 ns fall time - 4 - ns

source-drain voltage IS=115mA; VGS= 0 V 0.47 0.75 1.1 V

ID=10μA; VGS=0V 60--V

ID=250μA; VDS=V

=25°C --1μA

= 150 °C --10μA

0.9 1.2 1.5 V

[1]

VGS=5V; ID=50mA - 1 2 Ω

=10V; ID=300mA - 0.9 1.6 Ω

VDS=10V; ID= 200 mA

[1]

- 700 - mS

- 0.72 0.8 nC VDS=30V; VGS=4.5V

- 3850pF f=1MHz

-4-pF

- 26ns RL=250Ω;

=10V;

=6Ω

Product data sheet Rev. 1 — 2 November 2010 6 of 16

NXP Semiconductors

017aaa112

017aaa113

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

1.0

(A)

VGS = 3.5 V

0.8

0.6

0.4

0.2

0.0

0.0 4.03.01.0 2.0

=25°CT

amb

3.0 V

2.75 V

2.5 V

2.25 V

2.0 V

VDS (V)

Fig 6. Per transistor: Output characteristics: drain

current as a function of drain-source voltage; typical values

−3

(A)

−4

−5

−6

0.0 2.01.50.5 1.0

=25°C; VDS=5V

amb

(3)

(2)(1)

VGS (V)

(1) minimum values (2) typical values (3) maximum values

Fig 7. Per transistor: Sub-threshold drain current as

a function of gate-source voltage

017aaa114

(2)(1)

(3)

(4)

(5)

ID (A)

DSon

(Ω)

(1) V (2) V (3) V (4) V (5) V

5.0

4.0

3.0

2.0

1.0

0.0

0.0 1.00.80.4 0.60.2

amb GS GS GS GS GS

=25°C =2V =2.5V =3V =3.5V =10V

Fig 8. Per transistor: Drain-source on-state

resistance as a function of drain current; typical values

017aaa115

(1)

(2)

VGS (V)

DSon

(Ω)

6.0

4.0

2.0

0.0

(1) T (2) T

0.0 10.08.04.0 6.02.0

=300mA

= 150 °C

amb

=25°C

amb

Fig 9. Per transistor: Drain-source on-state

resistance as a function of gate-source voltage; typical values

Product data sheet Rev. 1 — 2 November 2010 7 of 16

NXP Semiconductors

017aaa116

017aaa022

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

0.8

(A)

0.6

0.4

0.2

0.0

0.0 3.02.01.0

VDS>ID× R (1) T (2) T

amb amb

=25°C = 150 °C

(2) (1)

DSon

(1) (2)

VGS (V)

Fig 10. Per transistor: Transfer characteristics: drain

current as a function of gate-source voltage;

typical values

017aaa117

GS(th)

(V)

2.0

1.5

(1)

2.4

1.8

1.2

0.6

0.0

−60 180120060

DSon

-----------------------------

DSon 25°C()

(°C)

amb

Fig 11. Per transistor: Normalized drain-source

on-state resistance as a function of ambient temperature; typical values

017aaa118

(pF)

(1)

(2)

1.0

0.5

0.0

−60 180120060

ID= 0.25 mA; VDS=V

(3)

(°C)

amb

(1) maximum values (2) typical values (3) minimum values

Fig 12. Per transistor: Gate-so ur c e thr e shold voltage

as a function of ambient temperature

−1

f=1MHz; V

(1) C

iss

(2) C

oss

(3) C

rss

Fig 13. Per transistor: Input, output and reverse

transfer capacitances as a function of

(2)

(3)

=0V

101

VDS (V)

drain-source voltage; typical values

Product data sheet Rev. 1 — 2 November 2010 8 of 16

NXP Semiconductors

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

5.0

(V)

4.0

3.0

2.0

1.0

0.0

0.0 0.80.60.2 0.4

ID= 300 mA; VDS=30V; T

amb

017aaa119

QG (nC)

=25°C

Fig 14. Per transistor: Gate-source voltage as a

function of gate charge; typical values

1.2

(A)

GS(pl)

GS(th)

GS1QGS2

G(tot)

003aaa50

Fig 15. Per transistor: Gate charg e wa v efo r m

definitions

017aaa120

0.8

(1) (2)

0.4

0.0

0.0 1.20.80.4 VSD (V)

VGS=0V

amb amb

= 150 °C =25°C

(1) T (2) T

Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values

Product data sheet Rev. 1 — 2 November 2010 9 of 16

NXP Semiconductors

8. Test information

Fig 17. Duty cycle definition

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

006aaa812

duty cycle δ =

Product data sheet Rev. 1 — 2 November 2010 10 of 16

NXP Semiconductors

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

9. Package outline

Plastic surface-mounted package; 6 leads SOT36

pin 1 index

132

456

wBM

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

0.30

0.20

IEC JEDEC JEITA

0.25

0.10

2.2

1.8

1.35

1.3

1.15

REFERENCES

0.65

HEL

2.2

2.0

0.45

0.15

Qywv

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

04-11-08 06-03-16

Fig 18. Package outline SOT363 (SC-88)

Product data sheet Rev. 1 — 2 November 2010 11 of 16

NXP Semiconductors

10. Soldering

2.35

1.5

0.6

(4×)

0.5

(4×)

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

2.65

solder lands

0.4 (2×)

solder resist

solder paste

0.5

(4×)

0.6

(4×)

0.6

(2×)

1.8

Fig 19. Reflow soldering footprint SOT363 (SC-88)

1.5

4.5

1.5

1.3 1.3

2.45

5.3

Fig 20. Wave soldering footprint SOT363 (SC-88)

0.3

occupied area

Dimensions in mm

sot363_

solder lands

2.5 solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_

Product data sheet Rev. 1 — 2 November 2010 12 of 16

NXP Semiconductors

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BSS138PS v.1 20101102 Product data sheet - -

Product data sheet Rev. 1 — 2 November 2010 13 of 16

NXP Semiconductors

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product develop ment. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 1 — 2 November 2010 14 of 16

NXP Semiconductors

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 1 — 2 November 2010 15 of 16

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

BSS138PS

60 V, 320 mA dual N-channel Trench MOSFET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 November 2010

Document identifier: BSS138PS

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NXP BSS 138 PS NXP Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Test information

8.1 Quality information

9. Package outline

10. Soldering

11. Revision history

12. Legal information

12.1 Data sheet status

12.2 Definitions

12.3 Disclaimers

12.4 Trademarks

13. Contact information

14. Contents