NXP BSS 138BK NXP Datasheet

SOT23

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

Rev. 1 — 4 August 2011 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

1.2 Features and benefits

 Logic-level compatible
 Very fast switching

 ESD protection up to 1.5 kV
 AEC-Q101 qualified

 Trench MOSFET technology

1.3 Applications

 Relay driver
 High-speed line driver

 Low-side loadswitch
 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

I

D

Static characteristics

R

DSon

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

drain-source voltage Tj=25°C --60V
gate-source voltage -20 - 20 V
drain current VGS=10V; T

drain-source on-state
resistance

VGS=10V; ID=350mA;

=25°C

T

j

amb

=25°C

[1]

- - 360 mA

-11.6Ω

NXP Semiconductors

12

3

017aaa255

G

D

S

2. Pinning information

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbo l

1 G gate
2Ssource
3 D drain

SOT23 (TO-236AB)

3. Ordering information

Table 3. Ordering information

Type number Package

BSS138BK TO-236AB plastic surface-mounted package; 3 leads SOT23

Name Description Version

4. Marking

Table 4. Marking codes

Type number Marking code

BSS138BK %SB

[1] % = placeholder for manufacturing site code.

[1]

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 4 August 2011 2 of 16

NXP Semiconductors

5. Limiting values

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

P

tot

T

j

T

amb

T

stg

Source-drain diode

I

S

ESD maximum rating

V

ESD

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.

drain-source voltage Tj=25°C - 60 V
gate-source voltage -20 20 V
drain current VGS=10V; T

=10V; T

V

GS

peak drain current T
total power dissipation T

= 25 °C; single pulse; tp≤ 10 µs - 1.2 A

amb

=25°C

amb

=25°C - 1140 mW

T

sp

amb
amb

=25°C
= 100 °C

[1]

- 360 mA

[1]

- 230 mA

[2]

- 350 mW

[1]

- 420 mW

junction temperature -55 150 °C
ambient temperature -55 150 °C
storage temperature -65 150 °C

source current T

amb

electrostatic discharge voltage HBM

=25°C

[1]

- 360 mA

[3]

- 1500 V

120

P

der

(%)

80

40

0

-75 17512525 75-25

Fig 1. Normalized total power dissipation as a

function of junction temperature

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 4 August 2011 3 of 16

001aao121

Tj (°C)

120

I

der

(%)

80

40

0

-75 17512525 75-25

Fig 2. Normalized continuous drain current as a

function of junction temperature

001aao122

Tj (°C)

NXP Semiconductors

aaa-000157

10

-1

10

-2

1

10

I

D

(A)

10

-3

VDS (V)

10

-1

10

2

101

(1)

(2)

(3)
(4)

(5)

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

IDM is a single pulse
(1) tp = 1 ms
(2) t

= 10 ms

p

(3) t

= 100 ms

p

(4) DC; Tsp = 25 °C
(5) DC; T

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

= 25 °C; 1 cm2 drain mounting pad

amb

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

thermal resistance from junction to ambient in free air

thermal resistance from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 4 August 2011 4 of 16

[1]

-310370K/W

[2]

-260300K/W

--115K/W

2

.

NXP Semiconductors

017aaa015

tp (s)

10

−3

10

2

10

3

10110

−2

10

−1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

017aaa016

tp (s)

10

−3

10

2

10

3

10110

−2

10

−1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm

2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 4 August 2011 5 of 16

NXP Semiconductors

7. Characteristics

BSS138BK

60 V, 360 mA N-channel Trench MOSFET

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

ID=250µA; VGS=0V; Tj=25°C 60--V

breakdown voltage

V

GSth

gate-source threshold

ID=250µA; VDS=VGS; Tj= 25 °C 0.48 1.1 1.6 V

voltage

I

DSS

I

GSS

R

g

DSon

fs

drain leakage current VDS=60V; VGS=0V; Tj=25°C --1µA

=60V; VGS=0V; Tj=150°C --10µA

V

DS

gate leakage current VGS=20V; VDS=0V; Tj=25°C --10µA

=-20V; VDS=0V; Tj=25°C --10µA

V

GS

=10V; VDS=0V; Tj=25°C --1µA

V

GS

=-10V; VDS=0V; Tj=25°C --1µA

V

GS

drain-source on-state
resistance

forward

VGS=10V; ID=350mA; Tj=25°C - 1 1.6 Ω

=10V; ID=350mA; Tj= 150 °C - 2 3.2 Ω

V

GS

=4.5V; ID= 200 mA; Tj=25°C - 1.1 2.2 Ω

V

GS

=2.5V; ID=10mA; Tj=25°C - 1.4 6.5 Ω

V

GS

VDS=10V; ID= 200 mA; Tj= 25 °C - 700 - mS

transconductance

Dynamic characteristi cs

Q
Q
Q
C
C
C

G(tot)
GS

GD
iss
oss
rss

total gate charge VDS=30V; ID= 300 mA; VGS=4.5V;

=25°C

T

gate-source charge - 0.1 - nC

j

gate-drain charge - 0.2 - nC
input capacitance VDS=10V; f=1MHz; VGS=0V;

=25°C

T

output capacitance - 7 - pF

j

reverse transfer

-0.60.7nC

- 4256pF

-4-pF

capacitance

t

d(on)

t

r

t

d(off)

t

f

turn-on delay time VDS=40V; RL= 250 Ω; VGS=10V;

=6Ω; Tj=25°C

R

rise time - 5 - ns

G(ext)

turn-off delay time - 38 76 ns
fall time - 20 - ns

- 5 10 ns

Source-drain diode

V

SD

source-drain voltage IS=300mA; VGS=0V; Tj= 25 °C 0.47 0.8 1.2 V

BSS138BK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 4 August 2011 6 of 16