NXP BSR13, BSR14 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
BSR13; BSR14
NPN switching transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING
TYPE NUMBER MARKING CODE
BSR13 U7*
BSR14 U8*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BSR13 − plastic surface mounted package; 3 leads SOT23
BSR14
2004 Jan 13 2
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BSR13 − 60 V
BSR14 − 75 V
collector-emitter voltage open base
BSR13 − 30 V
BSR14 − 40 V
emitter-base voltage open collector
BSR13 − 5 V
BSR14 − 6 V
collector current (DC) − 800 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current
BSR13 IE = 0; VCB = 50 V − 30 nA
IE = 0; VCB = 50 V; Tj = 150 °C − 10 µA
collector cut-off current
BSR14 IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; Tj = 150 °C − 10 µA
I
EBO
emitter cut-off current IC = 0; VEB = 5 V
BSR13 − 30 nA
BSR14 − 10 nA
2004 Jan 13 3
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