NXP BSN 20BK NXP Datasheet

BSN20BK

60 V, N-channel Trench MOSFET

18 December 2014 Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

Logic-level compatible

•

Very fast switching

•

Trench MOSFET technology

•

ElectroStatic Discharge (ESD) protection: 2 kV HBM

•

3. Applications

Relay driver

•

High-speed line driver

•

Low-side loadswitch

•

Switching circuits

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

DSon

drain-source voltage - - 60 V

gate-source voltage

drain current

drain-source on-state resistance

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

Tj = 25 °C

-20 - 20 V

VGS = 10 V; T

VGS = 10 V; Tsp = 25 °C - - 330 mA

VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.1 2.8 Ω

amb

= 25 °C [1] - - 265 mAI

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NXP Semiconductors

1 2

017aaa255

BSN20BK

60 V, N-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

TO-236AB (SOT23)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BSN20BK TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

BSN20BK %4S

[1] % = placeholder for manufacturing site code

Product data sheet 18 December 2014 2 / 16

NXP Semiconductors

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

der

(%)

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

der

(%)

BSN20BK

60 V, N-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

drain-source voltage - 60 V

gate-source voltage

drain current

Tj = 25 °C

VGS = 10 V; T

-20 20 V

= 25 °C [1] - 265 mA

amb

= 100 °C [1] - 170 mA

amb

VGS = 10 V; Tsp = 25 °C - 330 mA

tot

amb

stg

peak drain current T

total power dissipation

junction temperature -55 150 °C

ambient temperature -55 150 °C

storage temperature -65 150 °C

Source-drain diode

source current T

= 25 °C; single pulse; tp ≤ 10 µs - 0.9 A

amb

= 25 °C

[2] - 310 mWT

[1] - 402 mW

Tsp = 25 °C - 1672 mW

= 25 °C [1] - 200 mA

amb

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Product data sheet 18 December 2014 3 / 16

Fig. 2. Normalized continuous drain current as a

function of junction temperature

NXP Semiconductors

aaa-015759

VDS (V)

-1

101

-1

-2

(A)

-3

Limit R

DSon

= VDS/I

(1)

(2)

(3)

(4)

(5)

(6)

(7)

BSN20BK

60 V, N-channel Trench MOSFET

IDM = single pulse

(1) tp = 10 µs

(2) tp = 100 µs

(3) tp = 1 ms

(4) tp = 10 ms

(5) DC; Tsp = 25 °C

(6) tp = 100 ms

(7) DC; T

= 25 °C; drain mounting pad 1 cm

amb

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to ambient

th(j-sp)

thermal resistance from junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2]

Product data sheet 18 December 2014 4 / 16

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

in free air [1] - 351 404 K/W

[2] - 271 311 K/W

t ≤ 5 s [2] - 210 241 K/W

- 65 75 K/W

NXP Semiconductors

aaa-014128

tp (s)

-3

10110

-2

-1

th(j-a)

(K/W)

duty cycle = 1

0.75

0.33

0.25

0.05

0.02

0.01

0.10

0.20

0.50

aaa-014129

tp (s)

-3

10110

-2

-1

th(j-a)

(K/W)

0.02

0.01

duty cycle = 1

0.75

0.33

0.05

0.10

0.20

0.50

0.25

BSN20BK

60 V, N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Product data sheet 18 December 2014 5 / 16

NXP Semiconductors

BSN20BK

60 V, N-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GSth

DSS

GSS

drain-source

ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V

breakdown voltage

gate-source threshold

ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 1 1.4 V

voltage

drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA

gate leakage current

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA

DSon

drain-source on-state resistance

forward transconductance

Dynamic characteristics

G(tot)

iss

oss

rss

total gate charge - 0.49 - nC

gate-source charge - 0.12 - nC

gate-drain charge

input capacitance - 20.2 - pF

output capacitance - 3.1 10 pF

reverse transfer capacitance

d(on)

d(off)

turn-on delay time - 7.9 - ns

rise time - 8.4 - ns

turn-off delay time - 12.5 - ns

fall time

Source-drain diode

source-drain voltage IS = 200 mA; VGS = 0 V; Tj = 25 °C - 0.86 1.2 V

VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 0.3 µA

VGS = -5 V; VDS = 0 V; Tj = 25 °C - - -0.3 µA

VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.1 2.8 Ω

VGS = 10 V; ID = 200 mA; Tj = 150 °C - 4.3 5.7 Ω

VGS = 5 V; ID = 200 mA; Tj = 25 °C - 2.2 3.2 Ω

VGS = 2.5 V; ID = 75 mA; Tj = 25 °C - 2.6 4 Ω

VDS = 10 V; ID = 200 mA; Tj = 25 °C - 0.71 - S

VDS = 30 V; ID = 200 mA; VGS = 4.5 V;

Tj = 25 °C

- 0.12 - nC

VDS = 30 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 2 7 pF

VDS = 30 V; ID = 200 mA; VGS = 4.5 V;

= 6 Ω; Tj = 25 °C

G(ext)

- 5.1 - ns

Product data sheet 18 December 2014 6 / 16

NXP Semiconductors

VDS (V)

0 431 2

aaa-015760

0.4

0.2

0.6

0.8

(A)

3.5 V

2.5 V

2.2 V

1.8 V

VGS = 10 V

2.0 V

4.5 V

aaa-015761

-4

-5

-3

(A)

-6

VGS (V)

0 2.01.50.5 1.0

(1)

(2)

(3)

ID (A)

0 0.80.60.2 0.4

aaa-015762

DSon

(Ω)

3.5 V

VGS = 10 V

4.5 V

1.8 V

2.0 V

2.2 V

2.5 V

3.0 V

VGS (V)

0 1084 62

aaa-015763

DSon

(Ω)

(1)

(2)

BSN20BK

60 V, N-channel Trench MOSFET

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

Tj = 25 °C; VDS = 5 V

(1) minimum values (2) typical values (3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

ID = 0.2 A

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Product data sheet 18 December 2014 7 / 16

NXP Semiconductors

VGS (V)

0 431 2

aaa-015764

0.2

0.4

0.6

(A)

(1)

(2)

Tj (°C)

-60 1801200 60

aaa-015765

1.0

1.5

0.5

2.0

2.5

Tj (°C)

-60 1801200 60

aaa-015766

1.0

0.5

1.5

2.0

GS(th)

(V)

(1)

(2)

(3)

aaa-015767

VDS (V)

-1

101

(pF)

(1)

(2)

(3)

BSN20BK

60 V, N-channel Trench MOSFET

Fig. 10. Transfer characteristics: drain current as a

Fig. 12. Gate-source threshold voltage as a function of

Product data sheet 18 December 2014 8 / 16

VDS > ID × R

DSon

(1) Tj = 150 °C

(2) Tj = 25 °C

function of gate-source voltage; typical values

ID = 0.25 mA; VDS = V

(1) maximum values (2) typical values (3) minimum values

junction temperature

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical values

f = 1 MHz; VGS = 0 V

(1) C

iss

(2) C

oss

(3) C

rss

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

NXP Semiconductors

QG (nC)

0 10.80.4 0.60.2

aaa-015768

(V)

003aa a508

GS(th)

GS1QGS2

G(tot)

GS(pl)

aaa-015769

VSD (V)

0 1.20.80.4

0.10

0.05

0.15

0.20

(A)

(1)

(2)

ID = 0.2 A; VDS = 30 V; T

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

amb

= 25 °C

BSN20BK

60 V, N-channel Trench MOSFET

Fig. 15. MOSFET transistor: Gate charge waveform

definitions

VGS = 0 V

(1) Tj = 150 °C

(2) Tj = 25 °C

Fig. 16. Source current as a function of source-drain voltage; typical values

Product data sheet 18 December 2014 9 / 16

NXP Semiconductors

006aaa812

duty cycle δ =

11. Test information

Fig. 17. Duty cycle definition

BSN20BK

60 V, N-channel Trench MOSFET

Product data sheet 18 December 2014 10 / 16

NXP Semiconductors

References

Outline version

European projection

Issue date

IEC JEDEC JEITA

SOT23

TO-236AB

sot023_po

14-06-19 14-09-22

Plastic surface-mounted package; 3 leads SOT23

0 1 2 mm

scale

1 2

w B

v A

Unit

max nom

min

1.1 0.1 0.15 3.0 1.4

0.2

Dimensions (mm are the original dimensions)

A1b

0.48

c D E e e

0.95

HELpQ v w

0.11.9

2.1 0.150.9 0.09 2.8 1.20.38

2.5 0.45

0.45

0.55

detail X

BSN20BK

60 V, N-channel Trench MOSFET

12. Package outline

Fig. 18. Package outline TO-236AB (SOT23)

Product data sheet 18 December 2014 11 / 16

NXP Semiconductors

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

13. Soldering

BSN20BK

60 V, N-channel Trench MOSFET

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

Product data sheet 18 December 2014 12 / 16

NXP Semiconductors

60 V, N-channel Trench MOSFET

BSN20BK

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

BSN20BK v.1 20141218 Product data sheet - -

Product data sheet 18 December 2014 13 / 16

NXP Semiconductors

15. Legal information

15.1 Data sheet status

Document status [1][2]

Objective [short] data sheet

Preliminary [short] data sheet

Product [short] data sheet

[1] Please consult the most recently issued document before initiating or

completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

Product status [3]

Development This document contains data from

Qualification This document contains data from the

Production This document contains the product

Definition

the objective specification for product development.

preliminary specification.

specification.

BSN20BK

60 V, N-channel Trench MOSFET

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

15.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.

products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the

Product data sheet 18 December 2014 14 / 16

NXP Semiconductors

grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.

BSN20BK

60 V, N-channel Trench MOSFET

15.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.

Product data sheet 18 December 2014 15 / 16

NXP Semiconductors

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................ 1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................4

10 Characteristics ....................................................... 6

11 Test information ................................................... 10

12 Package outline ................................................... 11

13 Soldering .............................................................. 12

14 Revision history ................................................... 13

15 Legal information .................................................14

15.1 Data sheet status ............................................... 14

15.2 Definitions ...........................................................14

15.3 Disclaimers ......................................................... 14

15.4 Trademarks ........................................................ 15

BSN20BK

60 V, N-channel Trench MOSFET

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 December 2014

Product data sheet 18 December 2014 16 / 16

NXP BSN 20BK NXP Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

1. General description

2. Features and benefits

3. Applications

4. Quick reference data

5. Pinning information

6. Ordering information

7. Marking

8. Limiting values

9. Thermal characteristics

10. Characteristics

11. Test information

12. Package outline

13. Soldering

14. Revision history

15. Legal information