NXP BSN 20BK NXP Datasheet

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BSN20BK

60 V, N-channel Trench MOSFET

18 December 2014 Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

2. Features and benefits

Logic-level compatible

•

Very fast switching

•

Trench MOSFET technology

•

ElectroStatic Discharge (ESD) protection: 2 kV HBM

•

3. Applications

Relay driver

•

High-speed line driver

•

Low-side loadswitch

•

Switching circuits

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

D

Static characteristics

R

DSon

drain-source voltage - - 60 V

gate-source voltage

drain current

drain-source on-state
resistance

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

Tj = 25 °C

-20 - 20 V

VGS = 10 V; T

VGS = 10 V; Tsp = 25 °C - - 330 mA

VGS = 10 V; ID = 200 mA; Tj = 25 °C - 2.1 2.8 Ω

amb

= 25 °C [1] - - 265 mAI

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1 2

3

017aaa255

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BSN20BK

60 V, N-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

TO-236AB (SOT23)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BSN20BK TO-236AB plastic surface-mounted package; 3 leads SOT23

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

BSN20BK %4S

[1] % = placeholder for manufacturing site code

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 2 / 16

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Tj(°C)

- 75 17512525 75- 25

017aaa123

40

80

120

P

der

(%)

0

Tj(°C)

- 75 17512525 75- 25

017aaa124

40

80

120

I

der

(%)

0

BSN20BK

60 V, N-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

drain-source voltage - 60 V

gate-source voltage

drain current

Tj = 25 °C

VGS = 10 V; T

VGS = 10 V; T

-20 20 V

= 25 °C [1] - 265 mA

amb

= 100 °C [1] - 170 mA

amb

VGS = 10 V; Tsp = 25 °C - 330 mA

I

P

T

T

T

DM

tot

j

amb

stg

peak drain current T

total power dissipation

junction temperature -55 150 °C

ambient temperature -55 150 °C

storage temperature -65 150 °C

Source-drain diode

I

S

source current T

= 25 °C; single pulse; tp ≤ 10 µs - 0.9 A

amb

amb

= 25 °C

[2] - 310 mWT

[1] - 402 mW

Tsp = 25 °C - 1672 mW

= 25 °C [1] - 200 mA

amb

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Fig. 1. Normalized total power dissipation as a

function of junction temperature

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Product data sheet 18 December 2014 3 / 16

Fig. 2. Normalized continuous drain current as a

function of junction temperature

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VDS (V)

10

-1

10

2

101

10

-1

10

-2

1

I

D

(A)

10

-3

Limit R

DSon

= VDS/I

D

(1)

(2)

(3)

(4)

(5)

(6)

(7)

BSN20BK

60 V, N-channel Trench MOSFET

IDM = single pulse

(1) tp = 10 µs

(2) tp = 100 µs

(3) tp = 1 ms

(4) tp = 10 ms

(5) DC; Tsp = 25 °C

(6) tp = 100 ms

(7) DC; T

= 25 °C; drain mounting pad 1 cm

amb

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

2

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance
from junction to
ambient

R

th(j-sp)

thermal resistance
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]

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Product data sheet 18 December 2014 4 / 16

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

in free air [1] - 351 404 K/W

[2] - 271 311 K/W

t ≤ 5 s [2] - 210 241 K/W

- 65 75 K/W

NXP Semiconductors

aaa-014128

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

3

Z

th(j-a)

(K/W)

10

duty cycle = 1

0.75

0.33

0.25

0.05

0.02

0.01

0

0.10

0.20

0.50

aaa-014129

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

3

Z

th(j-a)

(K/W)

10

0.02

0.01

0

duty cycle = 1

0.75

0.33

0.05

0.10

0.20

0.50

0.25

BSN20BK

60 V, N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm

2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BSN20BK All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 18 December 2014 5 / 16