NXP BLF6G38-50, BLF6G38LS-50 Technical data

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BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 01 — 12 February 2008 Preliminary data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Table 1. Typical performance
Typical RF performance at T
Mode of operation f VDSP
1-carrier N-CDMA
=25°C in a class-AB production test circuit.
case
[1]
L(AV)PL(M)
(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc)
[2]
3400 to 3600 28 9 70 14 23 49
GpηDACPR
[3]
885k
ACPR
[3]
64
1980k
CAUTION
[1] P [2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR=9.7dBat
[3] Measured within 30 kHz bandwidth.
stands for peak output power.
L(M)
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
n Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
n Qualified up to a maximum VDS operation of 32 V n Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation n Internally matched for ease of use n Low gold plating thickness on leads
NXP Semiconductors
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
BLF6G38-50 (SOT502A)
1 drain 2 gate 3 source
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
2
sym112
1
3
1
[1]
2
3
BLF6G38LS-50 (SOT502B)
1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
BLF6G38-50 - flanged LDMOST ceramic package; 2 mounting holes;
BLF6G38LS-50 - earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage - 65 V gate-source voltage 0.5 +13 V drain current - 16.5 A storage temperature 65 +150 °C junction temperature - 225 °C
2
sym112
1
3
1
[1]
3
2
Name Description Version
SOT502A
2 leads
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 2 of 12
NXP Semiconductors
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Type Typ Max Unit
R
th(j-case)
thermal resistance from junction to case
6. Characteristics
Table 6. Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
drain-source breakdown voltage VGS=0V; ID= 0.4 mA 65 - - V gate-source threshold voltage VDS= 10 V; ID= 80 mA 1.4 2 2.4 V drain leakage current VGS=0V; VDS=28V - - 2.8 µA drain cut-off current VGS=V
gate leakage current VGS= +11 V; VDS= 0 V - - 280 nA forward transconductance VDS=10V; ID= 2.8 A - 5.6 - S drain-source on-state resistance VGS=V
feedback capacitance VGS= 0 V; VDS=28V;
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
T P
case L
=80°C;
=50W
V
DS
I
= 2.8 A
D
f = 1 MHz
BLF6G38-50 0.9 - K/W BLF6G38LS-50 0.7 - K/W
GS(th)
+ 3.75 V;
11.9 16.4 - A
=10V
GS(th)
+ 3.75 V;
- 0.18 0.29
- 1.17 - pF
7. Application information
Table 7. Application information
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f V
=28V; IDq= 450 mA; T
DS
circuit.
Symbol Parameter Conditions Min Typ Max Unit
P
L(M)
G
p
RL
in
η
D
ACPR ACPR
[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS= 28 V; IDq= 450 mA; PL=P
peak output power P power gain P input return loss P drain efficiency P adjacent channel power ratio (885 kHz) P
885k
adjacent channel power ratio (1980 kHz) P
1980k
= 3400 MHz; f2= 3500 MHz; f3= 3600 MHz; RF performance at
1
=25°C; unless otherwise specified, in a class-AB production
case
= 9 W 65 70 - W
L(AV)
= 9 W 12.5 14 - dB
L(AV)
=9W - −10 - dB
L(AV)
= 9 W 20 23 - %
L(AV)
[1]
46 49 - dBc
[1]
62 64 - dBc
; f = 3600 MHz.
L(1dB)
L(AV) L(AV)
=9W =9W
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 3 of 12
NXP Semiconductors
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB.
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
EVM
(%)
7.2.2 Graphs
5
4
3
2
1
Preamble: 1 symbol × 30 subchannels; PL = P
L(nom)
+ 3.86 dB.
Table 8. Frame structure
Frame contents Modulation technique Data length
Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit
001aah395
G
(dB)
15
p
13
11
9
7
G
p
η
D
001aah396
30
η
D
(%)
24
18
12
6
0
01284
P
L(AV)
(W)
5
01284
P
L(AV)
0
(W)
VDS= 28 V; IDq= 450 mA; f = 3500 MHz. VDS=28V; IDq= 450 mA; f = 3500 MHz.
Fig 1. EVM as a function of average load power;
typical values
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Fig 2. Power gain and drain efficiency as functions of
average load power; typical values
Preliminary data sheet Rev. 01 — 12 February 2008 4 of 12
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
P
L(AV)
001aah397
(W)
20
ACPR
(dBc)
30
40
50
60
70
01284
(1)
(2)
(3)
VDS = 28 V; IDq = 450 mA; f = 3500 MHz. (1) f = 10 MHz (2) f = 20 MHz (3) f = 30 MHz
Fig 3. Adjacent channel power ratio as a function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
16
G
p
(dB)
15
14
13
12
11
10
3400 360035503450 3500
G
p
η
D
001aah398
f (MHz)
VDS= 28 V; IDq= 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Fig 4. Power gain and drain efficiency as functions of
frequency; typical values
26
η
D
(%)
25
24
23
22
21
20
40
ACPR
(dBc)
50
60
70
3400 360035503450 3500
(1)
(2)
(1) (2)
(1) (2)
001aah399
ACPR
ACPR
ACPR
f (MHz)
885k
1500k
1980k
VDS=28V; IDq= 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component
Fig 5. Adjacent channel power ratio as a function of
frequency; typical values
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 5 of 12
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
001aah400
101
(W)
P
L
40
η
D
(%)
30
20
10
0
2
10
G
(dB)
18
p
16
G
p
14
12
10
1
10
η
D
VDS= 28 V; IDq= 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR= 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz.
Fig 6. Power gain and drain efficiency as functions of
load power; typical values
30
ACPR (dBc)
40
50
60
70
80
(1)
ACPR
885k
ACPR
1500k
ACPR
1980k
1
10
(2)
(1) (2)
(1) (2)
001aah401
2
101
PL (W)
10
VDS=28V; IDq= 450 mA; f = 3500 MHz;
Single Carrier N-CDMA; PAR= 9.7 dB at 0.01 %
probability; Channel Bandwidth = 1.23 MHz;
IBW = 30 kHz. (1) Low frequency component (2) High frequency component
Fig 7. Adjacent channel power ratio as a function of
load power; typical values
001aah402
2
L
(W)
10
101
P
G
(dB)
16
p
15
(2)
14
13
12
1
10
(1) (3)
VDS= 28 V; IDq= 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz
Fig 8. Power gain as a function of load power; typical
values
001aah403
2
L
(W)
10
101
P
P
(W)
i
1.5
1.0
0.5
(3) (2) (1)
0
1
10
VDS=28V; IDq= 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz
Fig 9. Input power as a function of load power; typical
values
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 6 of 12
NXP Semiconductors
8. Test information
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
C8
C6
C5
C9
C7
L1
BLF6G38-50
OUTPUT-REV 1A 30RF35 NXP
R2
C3
C1 C2
BLF6G38-50
INPUT-REV 1A 30RF35 NXP
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components.
C4
R1
C10
001aah404
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
Table 9. List of components
For test circuit, see Figure 10.
Component Description Value Remarks
C1, C4, C5, C6 multilayer ceramic chip capacitor 10 pF C2 multilayer ceramic chip capacitor 0.7 pF C3, C8, C9 multilayer ceramic chip capacitor 100 nF C7 multilayer ceramic chip capacitor 10 µF; 50 V
[1] [1] [2] [3]
C10 electrolytic capacitor 470 µF; 63 V R1, R2 SMD resistor 9.1 L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent
[1] American Technical Ceramics type 100A or capacitor of same quality. [2] Vishay VJ1206Y104KXB or capacitor of same quality. [3] TDK C5750X7R1H106M or capacitor of same quality.
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 7 of 12
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D
1
U
1
q
1
H
U
2
A
2
b
w
M M
C
2
0 5 10 mm
scale
F
B
C
L
p
w
M M M
AB
1
c
E
1
Q
E
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
4.72
3.43
0.186
0.135
OUTLINE
VERSION
SOT502A
12.83
12.57
0.505
0.495
c
Db
20.02
19.61
0.788
0.772
19.96
19.66
0.786
0.774
0.15
0.08
0.006
0.003
IEC JEDEC JEITA
D
1
EE
9.53
9.50
9.25
9.30
0.375
0.374
0.364
0.366
REFERENCES
1
1.14
0.89
0.045
0.035
F
19.94
18.92
0.785
0.745
L
5.33
4.32
p
3.38
3.12
0.133
0.123
H
0.210
0.170
qw
Q
1.70
1.45
0.067
0.057
PROJECTION
U
U
1
9.91
34.16
9.65
33.91
0.390
1.345
0.380
1.335
EUROPEAN
w
2
0.25 0.5127.94
0.01 0.021.100
2
1
ISSUE DATE
99-12-28 03-01-10
Fig 11. Package outline SOT502A
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 8 of 12
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads SOT502B
D
A
F
3
D
1
U
1
L
H
U
2
1
D
c
E
1
E
2
b
w
M M
D
2
0 5 10 mm
scale
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
4.72
3.43
0.186
0.135
OUTLINE
VERSION
SOT502B
12.83
12.57
0.505
0.495
c
Db
20.02
19.61
0.788
0.772
19.96
19.66
0.786
0.774
0.15
0.08
0.006
0.003
IEC JEDEC JEITA
D
1
EE
9.53
9.50
9.25
9.30
0.375
0.374
0.364
0.366
REFERENCES
1
1.14
0.89
0.045
0.035
U
F
19.94
18.92
0.785
0.745
L
H
5.33
4.32
0.210
0.170
Q
1.70
1.45
0.067
0.057
U
20.70
20.45
0.815
0.805
1
2
9.91
9.65
0.390
0.380
w
2
0.25
0.010
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10 07-05-09
Fig 12. Package outline SOT502B
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 9 of 12
NXP Semiconductors
10. Abbreviations
Table 10. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function CW Continuous Wave EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
11. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G38-50_BLF6G38LS-50_1 20080212 Preliminary data sheet - -
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 10 of 12
NXP Semiconductors
12. Legal information
12.1 Data sheet status
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s)described in thisdocument mayhave changed since this documentwas published and may differin caseof multiple devices. Thelatest product status
information is available on the Internet at URL
[1][2]
Product status
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information includedherein and shall haveno liability forthe consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with thesame product type number(s)and title. Ashort data sheetis intended for quickreference only and should notbe relied upon to contain detailedand full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However,NXP Semiconductors does not giveany representations or warranties, expressed or implied, asto the accuracy or completenessof such information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This documentsupersedes and replaces all information suppliedprior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute MaximumRatings System of IEC 60134) maycause permanent damage tothedevice. Limiting valuesare stress ratings onlyand operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale,aspublished at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication ofany license under any copyrights, patents or other industrial or intellectual property rights.
12.4 Trademarks
Notice: Allreferenced brands,product names, service namesand trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.
Preliminary data sheet Rev. 01 — 12 February 2008 11 of 12
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4
7.2.1 WiMAX signal description. . . . . . . . . . . . . . . . . 4
7.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Single carrier N-CDMA broadband
performance at 9 W average . . . . . . . . . . . . . . 5
7.3.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
WiMAX power LDMOS transistor
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BLF6G38-50_BLF6G38LS-50_1
Date of release: 12 February 2008
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