NXP BLF6G38-50, BLF6G38LS-50 Technical data

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BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Rev. 01 — 12 February 2008 Preliminary data sheet

1. Product profile

1.1 General description

50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.

Table 1. Typical performance

Typical RF performance at T

Mode of operation f VDSP

1-carrier N-CDMA

=25°C in a class-AB production test circuit.

case

[1]

L(AV)PL(M)

(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc)

[2]

3400 to 3600 28 9 70 14 23 −49

GpηDACPR

[3]

885k

ACPR

[3]

−64

1980k

CAUTION

[1] P
[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR=9.7dBat

[3] Measured within 30 kHz bandwidth.

stands for peak output power.

L(M)

0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

n Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a
drain efficiency of 23 % and a peak output power of 70 W:

n Qualified up to a maximum VDS operation of 32 V
n Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation
n Internally matched for ease of use
n Low gold plating thickness on leads

NXP Semiconductors

n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n RF power amplifiers for base stations and multicarrier applications in the

3400 MHz to 3800 MHz frequency range

2. Pinning information

Table 2: Pinning

Pin Description Simplified outline Symbol

BLF6G38-50 (SOT502A)

1 drain
2 gate
3 source

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

2

sym112

1

3

1

[1]

2

3

BLF6G38LS-50 (SOT502B)

1 drain
2 gate
3 source

[1] Connected to flange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF6G38-50 - flanged LDMOST ceramic package; 2 mounting holes;

BLF6G38LS-50 - earless flanged LDMOST ceramic package; 2 leads SOT502B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

T

stg

T

j

drain-source voltage - 65 V
gate-source voltage −0.5 +13 V
drain current - 16.5 A
storage temperature −65 +150 °C
junction temperature - 225 °C

2

sym112

1

3

1

[1]

3

2

Name Description Version

SOT502A

2 leads

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 2 of 12

NXP Semiconductors

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Type Typ Max Unit

R

th(j-case)

thermal resistance from
junction to case

6. Characteristics

Table 6. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

(BR)DSS

V

GS(th)

I

DSS

I

DSX

I

GSS

g

fs

R

DS(on)

C

rs

drain-source breakdown voltage VGS=0V; ID= 0.4 mA 65 - - V
gate-source threshold voltage VDS= 10 V; ID= 80 mA 1.4 2 2.4 V
drain leakage current VGS=0V; VDS=28V - - 2.8 µA
drain cut-off current VGS=V

gate leakage current VGS= +11 V; VDS= 0 V - - 280 nA
forward transconductance VDS=10V; ID= 2.8 A - 5.6 - S
drain-source on-state resistance VGS=V

feedback capacitance VGS= 0 V; VDS=28V;

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

T
P

case
L

=80°C;

=50W

V

DS

I

= 2.8 A

D

f = 1 MHz

BLF6G38-50 0.9 - K/W
BLF6G38LS-50 0.7 - K/W

GS(th)

+ 3.75 V;

11.9 16.4 - A

=10V

GS(th)

+ 3.75 V;

- 0.18 0.29 Ω

- 1.17 - pF

7. Application information

Table 7. Application information

Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel
bandwidth is 1.23 MHz; f
V

=28V; IDq= 450 mA; T

DS

circuit.

Symbol Parameter Conditions Min Typ Max Unit

P

L(M)

G

p

RL

in

η

D

ACPR
ACPR

[1] Measured within 30 kHz bandwidth.

7.1 Ruggedness in class-AB operation

The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS= 28 V; IDq= 450 mA; PL=P

peak output power P
power gain P
input return loss P
drain efficiency P
adjacent channel power ratio (885 kHz) P

885k

adjacent channel power ratio (1980 kHz) P

1980k

= 3400 MHz; f2= 3500 MHz; f3= 3600 MHz; RF performance at

1

=25°C; unless otherwise specified, in a class-AB production

case

= 9 W 65 70 - W

L(AV)

= 9 W 12.5 14 - dB

L(AV)

=9W - −10 - dB

L(AV)

= 9 W 20 23 - %

L(AV)

[1]

−46 −49 - dBc

[1]

−62 −64 - dBc

; f = 3600 MHz.

L(1dB)

L(AV)
L(AV)

=9W
=9W

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 3 of 12

NXP Semiconductors

7.2 NXP WiMAX signal

7.2.1 WiMAX signal description

Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

EVM

(%)

7.2.2 Graphs

5

4

3

2

1

Preamble: 1 symbol × 30 subchannels; PL = P

L(nom)

+ 3.86 dB.

Table 8. Frame structure

Frame contents Modulation technique Data length

Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit
Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit
Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit

001aah395

G

(dB)

15

p

13

11

9

7

G

p

η

D

001aah396

30

η

D

(%)

24

18

12

6

0

01284

P

L(AV)

(W)

5

01284

P

L(AV)

0

(W)

VDS= 28 V; IDq= 450 mA; f = 3500 MHz. VDS=28V; IDq= 450 mA; f = 3500 MHz.

Fig 1. EVM as a function of average load power;

typical values

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Fig 2. Power gain and drain efficiency as functions of

average load power; typical values

Preliminary data sheet Rev. 01 — 12 February 2008 4 of 12

NXP Semiconductors

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

P

L(AV)

001aah397

(W)

−20

ACPR

(dBc)

−30

−40

−50

−60

−70

01284

(1)

(2)

(3)

VDS = 28 V; IDq = 450 mA; f = 3500 MHz.
(1) f = 10 MHz
(2) f = 20 MHz
(3) f = 30 MHz

Fig 3. Adjacent channel power ratio as a function of average load power; typical values

7.3 Single carrier N-CDMA broadband performance at 9 W average

7.3.1 Graphs

16

G

p

(dB)

15

14

13

12

11

10

3400 360035503450 3500

G

p

η

D

001aah398

f (MHz)

VDS= 28 V; IDq= 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.

Fig 4. Power gain and drain efficiency as functions of

frequency; typical values

26

η

D

(%)

25

24

23

22

21

20

−40

ACPR

(dBc)

−50

−60

−70

3400 360035503450 3500

(1)

(2)

(1)
(2)

(1)
(2)

001aah399

ACPR

ACPR

ACPR

f (MHz)

885k

1500k

1980k

VDS=28V; IDq= 450 mA; Single Carrier N-CDMA;

PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component

Fig 5. Adjacent channel power ratio as a function of

frequency; typical values

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 5 of 12

NXP Semiconductors

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

001aah400

101

(W)

P

L

40

η

D

(%)

30

20

10

0

2

10

G

(dB)

18

p

16

G

p

14

12

10

−1

10

η

D

VDS= 28 V; IDq= 450 mA; f = 3500 MHz;
Single Carrier N-CDMA; PAR= 9.7 dB at 0.01 %
probability; Channel Bandwidth = 1.23 MHz;
IBW = 30 kHz.

Fig 6. Power gain and drain efficiency as functions of

load power; typical values

−30

ACPR
(dBc)

−40

−50

−60

−70

−80

(1)

ACPR

885k

ACPR

1500k

ACPR

1980k

−1

10

(2)

(1)
(2)

(1)
(2)

001aah401

2

101

PL (W)

10

VDS=28V; IDq= 450 mA; f = 3500 MHz;

Single Carrier N-CDMA; PAR= 9.7 dB at 0.01 %

probability; Channel Bandwidth = 1.23 MHz;

IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component

Fig 7. Adjacent channel power ratio as a function of

load power; typical values

001aah402

2

L

(W)

10

101

P

G

(dB)

16

p

15

(2)

14

13

12

−1

10

(1)
(3)

VDS= 28 V; IDq= 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; Channel

Bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz

Fig 8. Power gain as a function of load power; typical

values

001aah403

2

L

(W)

10

101

P

P

(W)

i

1.5

1.0

0.5

(3)
(2)
(1)

0

−1

10

VDS=28V; IDq= 450 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; Channel

Bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz

Fig 9. Input power as a function of load power; typical

values

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 6 of 12

NXP Semiconductors

8. Test information

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

C8

C6

C5

C9

C7

L1

BLF6G38-50

OUTPUT-REV 1A
30RF35
NXP

R2

C3

C1 C2

BLF6G38-50

INPUT-REV 1A
30RF35
NXP

Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 9 for list of components.

C4

R1

C10

001aah404

Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit

Table 9. List of components

For test circuit, see Figure 10.

Component Description Value Remarks

C1, C4, C5, C6 multilayer ceramic chip capacitor 10 pF
C2 multilayer ceramic chip capacitor 0.7 pF
C3, C8, C9 multilayer ceramic chip capacitor 100 nF
C7 multilayer ceramic chip capacitor 10 µF; 50 V

[1]
[1]
[2]
[3]

C10 electrolytic capacitor 470 µF; 63 V
R1, R2 SMD resistor 9.1 Ω
L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent

[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] Vishay VJ1206Y104KXB or capacitor of same quality.
[3] TDK C5750X7R1H106M or capacitor of same quality.

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 7 of 12

NXP Semiconductors

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

9. Package outline

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

D

A

3

D

1

U

1

q

1

H

U

2

A

2

b

w

M M

C

2

0 5 10 mm

scale

F

B

C

L

p

w

M M M

AB

1

c

E

1

Q

E

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE

VERSION

SOT502A

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

D

1

EE

9.53

9.50

9.25

9.30

0.375

0.374

0.364

0.366

REFERENCES

1

1.14

0.89

0.045

0.035

F

19.94

18.92

0.785

0.745

L

5.33

4.32

p

3.38

3.12

0.133

0.123

H

0.210

0.170

qw

Q

1.70

1.45

0.067

0.057

PROJECTION

U

U

1

9.91

34.16

9.65

33.91

0.390

1.345

0.380

1.335

EUROPEAN

w

2

0.25 0.5127.94

0.01 0.021.100

2

1

ISSUE DATE

99-12-28
03-01-10

Fig 11. Package outline SOT502A

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 8 of 12

NXP Semiconductors

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Earless flanged LDMOST ceramic package; 2 leads SOT502B

D

A

F

3

D

1

U

1

L

H

U

2

1

D

c

E

1

E

2

b

w

M M

D

2

0 5 10 mm

scale

Q

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches

A

4.72

3.43

0.186

0.135

OUTLINE

VERSION

SOT502B

12.83

12.57

0.505

0.495

c

Db

20.02

19.61

0.788

0.772

19.96

19.66

0.786

0.774

0.15

0.08

0.006

0.003

IEC JEDEC JEITA

D

1

EE

9.53

9.50

9.25

9.30

0.375

0.374

0.364

0.366

REFERENCES

1

1.14

0.89

0.045

0.035

U

F

19.94

18.92

0.785

0.745

L

H

5.33

4.32

0.210

0.170

Q

1.70

1.45

0.067

0.057

U

20.70

20.45

0.815

0.805

1

2

9.91

9.65

0.390

0.380

w

2

0.25

0.010

EUROPEAN

PROJECTION

ISSUE DATE

03-01-10
07-05-09

Fig 12. Package outline SOT502B

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 9 of 12

NXP Semiconductors

10. Abbreviations

Table 10. Abbreviations

Acronym Description

CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
EVM Error Vector Magnitude
FCH Frame Control Header
FFT Fast Fourier Transform
IBW Instantaneous BandWidth
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
N-CDMA Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
PUSC Partial Usage of SubChannels
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
WCS Wireless Communications Service
WiMAX Worldwide Interoperability for Microwave Access

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF6G38-50_BLF6G38LS-50_1 20080212 Preliminary data sheet - -

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 10 of 12

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in thisdocument mayhave changed since this documentwas published and may differin caseof multiple devices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability forthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort data sheetis intended
for quickreference only and should notbe relied upon to contain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied, asto the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information suppliedprior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134) maycause permanent
damage tothedevice. Limiting valuesare stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale,aspublished
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication ofany license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

BLF6G38-50_BLF6G38LS-50_1 © NXP B.V. 2008. All rights reserved.

Preliminary data sheet Rev. 01 — 12 February 2008 11 of 12

NXP Semiconductors

BLF6G38-50; BLF6G38LS-50

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 3

7.2 NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4

7.2.1 WiMAX signal description. . . . . . . . . . . . . . . . . 4

7.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.3 Single carrier N-CDMA broadband

performance at 9 W average . . . . . . . . . . . . . . 5

7.3.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

WiMAX power LDMOS transistor

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

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For sales office addresses, please send an email to: [e-mail]

Document identifier: BLF6G38-50_BLF6G38LS-50_1

Date of release: 12 February 2008