NXP BLF6G38-50, BLF6G38LS-50 Technical data

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BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Rev. 01 — 12 February 2008 Preliminary data sheet

1. Product proﬁle

1.1 General description

50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1. Typical performance

Typical RF performance at T

Mode of operation f VDSP

1-carrier N-CDMA

=25°C in a class-AB production test circuit.

case

[1]

L(AV)PL(M)

(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc)

[2]

3400 to 3600 28 9 70 14 23 −49

GpηDACPR

[3]

885k

ACPR

[3]

−64

1980k

CAUTION

[1] P [2] Single carrier N-CDMA with pilot, paging, sync and 6 trafﬁc channels (Walsh codes 8 - 13). PAR=9.7dBat

[3] Measured within 30 kHz bandwidth.

stands for peak output power.

L(M)

0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

n Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 trafﬁc channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efﬁciency of 23 % and a peak output power of 70 W:

n Qualiﬁed up to a maximum VDS operation of 32 V n Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range n Integrated ESD protection n Excellent ruggedness n High efﬁciency n Excellent thermal stability n Designed for broadband operation n Internally matched for ease of use n Low gold plating thickness on leads

NXP Semiconductors

n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

n RF power ampliﬁers for base stations and multicarrier applications in the

3400 MHz to 3800 MHz frequency range

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

BLF6G38-50 (SOT502A)

1 drain 2 gate 3 source

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

sym112

[1]

BLF6G38LS-50 (SOT502B)

1 drain 2 gate 3 source

[1] Connected to ﬂange.

3. Ordering information

Table 3. Ordering information

Type number Package

BLF6G38-50 - ﬂanged LDMOST ceramic package; 2 mounting holes;

BLF6G38LS-50 - earless ﬂanged LDMOST ceramic package; 2 leads SOT502B

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

stg

drain-source voltage - 65 V gate-source voltage −0.5 +13 V drain current - 16.5 A storage temperature −65 +150 °C junction temperature - 225 °C

sym112

[1]

Name Description Version

SOT502A

2 leads

Preliminary data sheet Rev. 01 — 12 February 2008 2 of 12

NXP Semiconductors

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Type Typ Max Unit

th(j-case)

thermal resistance from junction to case

6. Characteristics

Table 6. Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

(BR)DSS

GS(th)

DSS

DSX

GSS

DS(on)

drain-source breakdown voltage VGS=0V; ID= 0.4 mA 65 - - V gate-source threshold voltage VDS= 10 V; ID= 80 mA 1.4 2 2.4 V drain leakage current VGS=0V; VDS=28V - - 2.8 µA drain cut-off current VGS=V

gate leakage current VGS= +11 V; VDS= 0 V - - 280 nA forward transconductance VDS=10V; ID= 2.8 A - 5.6 - S drain-source on-state resistance VGS=V

feedback capacitance VGS= 0 V; VDS=28V;

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

T P

case L

=80°C;

=50W

= 2.8 A

f = 1 MHz

BLF6G38-50 0.9 - K/W BLF6G38LS-50 0.7 - K/W

GS(th)

+ 3.75 V;

11.9 16.4 - A

=10V

GS(th)

+ 3.75 V;

- 0.18 0.29 Ω

- 1.17 - pF

7. Application information

Table 7. Application information

Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 trafﬁc channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f V

=28V; IDq= 450 mA; T

circuit.

Symbol Parameter Conditions Min Typ Max Unit

L(M)

ACPR ACPR

[1] Measured within 30 kHz bandwidth.

7.1 Ruggedness in class-AB operation

The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS= 28 V; IDq= 450 mA; PL=P

peak output power P power gain P input return loss P drain efﬁciency P adjacent channel power ratio (885 kHz) P

885k

adjacent channel power ratio (1980 kHz) P

1980k

= 3400 MHz; f2= 3500 MHz; f3= 3600 MHz; RF performance at

=25°C; unless otherwise speciﬁed, in a class-AB production

case

= 9 W 65 70 - W

L(AV)

= 9 W 12.5 14 - dB

L(AV)

=9W - −10 - dB

L(AV)

= 9 W 20 23 - %

L(AV)

[1]

−46 −49 - dBc

[1]

−62 −64 - dBc

; f = 3600 MHz.

L(1dB)

L(AV) L(AV)

=9W =9W

Preliminary data sheet Rev. 01 — 12 February 2008 3 of 12

NXP Semiconductors

7.2 NXP WiMAX signal

7.2.1 WiMAX signal description

Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB.

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

EVM

(%)

7.2.2 Graphs

Preamble: 1 symbol × 30 subchannels; PL = P

L(nom)

+ 3.86 dB.

Table 8. Frame structure

Frame contents Modulation technique Data length

Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit

001aah395

(dB)

001aah396

(%)

01284

L(AV)

(W)

01284

L(AV)

(W)

VDS= 28 V; IDq= 450 mA; f = 3500 MHz. VDS=28V; IDq= 450 mA; f = 3500 MHz.

Fig 1. EVM as a function of average load power;

typical values

Fig 2. Power gain and drain efﬁciency as functions of

average load power; typical values

Preliminary data sheet Rev. 01 — 12 February 2008 4 of 12

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