NXP BISS User Manual

The most efcient low
V

CEsat

Experience best performance for on-state-resistance
and switching times. Choose from NXP’s broad
portfolio of energy and space saving products.

(BISS) transistors

Low V

I

(A)

350

CEsat

(BISS) transistors Product News : Fourth-generation technology

Our efficient low V

transistors live up to their name as Breakthrough In Small Signal (BISS) transistors. They offer lower

CEsat

power losses with higher efficiency than their standard transistor counterparts, and they deliver the required performance
in smaller packages that save PCB space. Choose from single and double transistors, resistor-equipped transistors (RETs),
or load switches, which combine a low V

Key features

} Low V

and high current capability

CEsat

transistor with a RET in a single package.

CEsat

Reduced power dissipation due to low V

CEsat

} Broad portfolio supports all kinds of applications
} Wide voltage range, including high-voltage types up to

500 V

Key benets

} Optimum power performance while saving space
} Very small packages enable integration of more functions onto

a PCB

} Less heat generation
} Energy saving
} Fewer components by using modules like RETs, double

transistors, and load switches

- Simpler circuit layouts

- Lower pick-and-place costs

- Less board space

65 % heat reduction by BISS transistors

Applications

} Portable applications (mobile phones, DSCs, PDAs, etc.)
} Power management
} Load switches
} Battery chargers
} DC/DC converter

General purpose
transistor T

= 110°C

case

High performance BISS
transistor T

case

} LED driver circuits in LCD backlight units

Temperature profile of device surface (T

case

).
Comparison of a general purpose transistor and
a BISS transistor.

We have shipped more than 1 billion low V

has been designed into all kinds of applications and is used by most of the top manufacturers

(BISS) transistors. Our portfolio, now in its fourth generation,

CEsat

= 40°C

84 mV

37 mV

th

Our new, highly efficient 4
V

and a high-speed switching version.

CEsat

generation low V

(BISS) transistors are available in two optimized versions - an ultra-low

CEsat

The products are available in small SMD packages SOT23, SOT457 (SC-74), SOT89 (SC-62) and SOT223 (SC-73) for single
and SOT96 (SO-8) for double transistors.

Ultra-low V

} These devices introduce a new ultra-low-ohmic substrate

technology and a patented chip metallization architecture

devices optimized for load-switch applications

CEsat

} Electrical performance for low-loss load switching comparable

to available products with twice the size due to doubled
maximum current capability I

(+115%)

C

} Ultra-low saturation voltage due to on-state-resistance

reduced by 60% compared to previous generations of low
V

transistors.

CEsat

Ultra-low on-state-resistance

90

80

(mΩ)

CEsat

R

Low V

70

60

50

40

30

20

10

0

CEsat

Previous
low V

CEsat

transistors

th

Gen

- 60%
R

CEsat

NXP 4

low V

transistors

CEsat

devices optimized for high-speed switching applications

} These devices introduce a new design that combines

} Available in 20 V and 60 V versions

High current capability

5

4

3

c

2

1

0

Previous
low V

CEsat

transistors

+115%

Minimized switching times

th

NXP 4

Gen

low V

CEsat

transistors

I

c

MESH-emitter technology with base contact extraction
electrodes.

} Low on-state resistance down to 50 mΩ, combining high

switching performance with minimized saturation voltages
and power dissipation – an industry first

} Switching time (t

) minimized by 60%.

s

300

(ns)

s

250

200

150

100

switch-off storage time t

50

0

Previous
low V

transistors

(20 V)

CEsat

- 60%
ts

th

NXP 4

low V

transistors

(30 V)

Gen

CEsat

32

Product overview - Ultra-low V

devices, optimized for load-switch applications

CEsat

Single transistors

V

Type Package Polarity

PBSS4021NT SOT23
PBSS4021NX SOT89 (SC-62) 7 15 19
PBSS4021NZ SOT223 (SC-73) 8 20 14
PBSS4021PT SOT23
PBSS4021PX SOT89 (SC-62) 6.2 15 23
PBSS4021PZ SOT223 (SC-73) 6.6 20 22
PBSS4041NT SOT23
PBSS4041NX SOT89 (SC-62) 6.2 15 25
PBSS4041NZ SOT223 (SC-73) 7 15 17.5
PBSS4041PT SOT23
PBSS4041PX SOT89 (SC-62) 5 15 40
PBSS4041PZ SOT223 (SC-73) 5.7 15 29

NPN

PNP

NPN

PNP

CEO

(V)

20

60

IC

(A)

4.3 8 36

3.5 8 55

3.8 8 46

2.7 8 80

ICM
(A)

RCEsat typ (mΩ) @ IC;

I

C/IB

= 10

Product News : Low V
package

Key features

} Exposed heat sink for excellent thermal and

electrical conductivity
} Power dissipation capability (P
} Small footprint of 2 x 2 mm and height of

0.65 mm

} Ideal for mobile and battery-driven

applications

) of > 1 W

tot

(BISS) transistors in SOT1061

CEsat

Performance comparison SOT1061 versus SOT89

PBSS304PX

60 V

V

CEO

4.2 A

I

c

min @ 2 A

h

FE

V

CEsat

V

CEsat

typ @ 0.5 A / 50 mA 35 mV
typ @ 4 A / 400 mA 150 mV

SOT89 (SC-62)

150

75% space reduction on PCB

PBSS5560PA

V

60 V

CEO

5 A

I

c

min @ 2 A

h

FE

V

typ@0.5 A / 50 mA 35 mV

CEsat

typ@4 A / 400 mA 180 mV

V

CEsat

150

SOT1061

Double transistors

V

Type Package Polarity

PBSS4021SN
PBSS4021SPN NPN/PNP 7.5/6.3 15 25/36
PBSS4021SP PNP/PNP 6.3 15 36
PBSS4041SN NPN/NPN
PBSS4041SPN NPN/PNP 6.7/5.9 15/10 32/47
PBSS4041SP PNP/PNP 5.9 10 47

Product overview - Low V

SOT96 (SO8)

CEsat

NPN/NPN

devices, optimized for high-speed switching applications

CEO

(V)

20

60

IC

(A)

7.5 15 25

6.7 15 32

ICM
(A)

RCEsat typ (mΩ) @ IC;

I

C/IB

Single transistors

V

Type Package Polarity

PBSS4032NT SOT23
PBSS4032ND SOT457 (SC-74) 3.5 6 50
PBSS4032NX SOT89 (SC-62) 4.7 10 45
PBSS4032NZ SOT223 (SC-73) 4.9 10 45
PBSS4032PT SOT23
PBSS4032PD SOT457 (SC-74) 2.7 5 88
PBSS4032PX SOT89 (SC-62) 4.2 10 58
PBSS4032PZ SOT223 (SC-73) 4.4 10 58

NPN

PNP

CEO

(V)

30

IC

(A)

2.6 5 76

2.4 5 110

ICM
(A)

RCEsat typ (mΩ) @ IC;

I

C/IB

Double transistors

V

Type Package Polarity

PBSS4032SN
PBSS4032SP PNP/PNP 4.8 10 65
PBSS4032SPN NPN/PNP 5.7/4.8 10 45/65

SOT96 (SO8)

NPN/NPN

CEO

(V)

30

IC

(A)

5.7 10 45

ICM
(A)

RCEsat typ (mΩ) @ IC;

I

C/IB

Package overview with body size

SOT23

2.9 x 1.3 x 1.0 mm

SOT457 (SC-74)

2.9 x 1.5 x 1.0 mm

SOT89 (SC-62)

4.5 x 2.5 x 1.5 mm

SOT223 (SC-73)

6.5 x 3.5 x 1.65 mm

SOT96 (SO8)

4.9 x 3.9 x 1.75 mm

= 10

= 10

= 10

Body dimensions:

4.5 x 2.5 mm = 11.3 mm

2

1.5 mm height 0.65 mm height

Body dimensions:

2.0 x 2.0 mm = 4 mm

SOT1061 minimized outline and solder pattern

Low V

Type Polarity V

PBSS4612PA

PBSS4620PA 20 6.0 7.0 280/440 33 20 275

PBSS4330PA 30 3.0 5.0 300/465 75* 40 300*

PBSS4630PA 30 6.0 7.0 280/450 35 21 275

PBSS4560PA 60 6.0 7.0 280/440 34 22 290

PBSS4580PA 80 5.6 7.0 270/425 40 25 320

PBSS8510PA 100 5.2 6.0 180/285 48 30 340

PBSS5612PA

PBSS5620PA 20 6.0 7.0 230/345 39 25 350

PBSS5330PA 30 3.0 5.0 200/320 75* 45 320*

PBSS5630PA 30 6.0 7.0 230/345 39 25 350

PBSS5560PA 60 5.0 6.0 180/265 35 35 450

PBSS5580PA 80 4.0 5.0 180/265 65 40 420

PBSS9410PA 100 2.7 4.0 180/295 110 45 450

* IC/IB = 10

(BISS) transistors in SOT1061

CEsat

CEO

NPN

PNP

h

(V) IC (A) ICM (A)

12 6.0 7.0 280/440 33 20 275

12 6.0 7.0 220/335 33 20 300

FE

(min/typ)

R
@ I

CEsat

C

typ (mΩ);

; IC/IB = 20

V

typ (mV)

CEsat

=0,5 A; IB=50 mA

@ I

C

V

@ I

CEsat

C

; IC/IB = 20

2

max (mV)

Package dimensions are not true to scale

54