NXP BISS User Manual

The most efcient low V
CEsat
Experience best performance for on-state-resistance and switching times. Choose from NXP’s broad portfolio of energy and space saving products.
(BISS) transistors
Low V
I
(A)
350
CEsat
(BISS) transistors Product News : Fourth-generation technology
Our efficient low V
transistors live up to their name as Breakthrough In Small Signal (BISS) transistors. They offer lower
CEsat
power losses with higher efficiency than their standard transistor counterparts, and they deliver the required performance in smaller packages that save PCB space. Choose from single and double transistors, resistor-equipped transistors (RETs), or load switches, which combine a low V
Key features
} Low V
and high current capability
CEsat
transistor with a RET in a single package.
CEsat
Reduced power dissipation due to low V
CEsat
} Broad portfolio supports all kinds of applications } Wide voltage range, including high-voltage types up to
500 V
Key benets
} Optimum power performance while saving space } Very small packages enable integration of more functions onto
a PCB
} Less heat generation } Energy saving } Fewer components by using modules like RETs, double
transistors, and load switches
- Simpler circuit layouts
- Lower pick-and-place costs
- Less board space
65 % heat reduction by BISS transistors
Applications
} Portable applications (mobile phones, DSCs, PDAs, etc.) } Power management } Load switches } Battery chargers } DC/DC converter
General purpose transistor T
= 110°C
case
High performance BISS transistor T
case
} LED driver circuits in LCD backlight units
Temperature profile of device surface (T
case
). Comparison of a general purpose transistor and a BISS transistor.
We have shipped more than 1 billion low V
has been designed into all kinds of applications and is used by most of the top manufacturers
(BISS) transistors. Our portfolio, now in its fourth generation,
CEsat
= 40°C
84 mV
37 mV
th
Our new, highly efficient 4 V
and a high-speed switching version.
CEsat
generation low V
(BISS) transistors are available in two optimized versions - an ultra-low
CEsat
The products are available in small SMD packages SOT23, SOT457 (SC-74), SOT89 (SC-62) and SOT223 (SC-73) for single and SOT96 (SO-8) for double transistors.
Ultra-low V
} These devices introduce a new ultra-low-ohmic substrate
technology and a patented chip metallization architecture
devices optimized for load-switch applications
CEsat
} Electrical performance for low-loss load switching comparable
to available products with twice the size due to doubled maximum current capability I
(+115%)
C
} Ultra-low saturation voltage due to on-state-resistance
reduced by 60% compared to previous generations of low V
transistors.
CEsat
Ultra-low on-state-resistance
90
80
(mΩ)
CEsat
R
Low V
70
60
50
40
30
20
10
0
CEsat
Previous low V
CEsat
transistors
th
Gen
- 60% R
CEsat
NXP 4
low V
transistors
CEsat
devices optimized for high-speed switching applications
} These devices introduce a new design that combines
} Available in 20 V and 60 V versions
High current capability
5
4
3
c
2
1
0
Previous low V
CEsat
transistors
+115%
Minimized switching times
th
NXP 4
Gen
low V
CEsat
transistors
I
c
MESH-emitter technology with base contact extraction electrodes.
} Low on-state resistance down to 50 mΩ, combining high
switching performance with minimized saturation voltages and power dissipation – an industry first
} Switching time (t
) minimized by 60%.
s
300
(ns)
s
250
200
150
100
switch-off storage time t
50
0
Previous low V
transistors
(20 V)
CEsat
- 60% ts
th
NXP 4
low V
transistors
(30 V)
Gen
CEsat
32
Product overview - Ultra-low V
devices, optimized for load-switch applications
CEsat
Single transistors
V
Type Package Polarity
PBSS4021NT SOT23 PBSS4021NX SOT89 (SC-62) 7 15 19 PBSS4021NZ SOT223 (SC-73) 8 20 14 PBSS4021PT SOT23 PBSS4021PX SOT89 (SC-62) 6.2 15 23 PBSS4021PZ SOT223 (SC-73) 6.6 20 22 PBSS4041NT SOT23 PBSS4041NX SOT89 (SC-62) 6.2 15 25 PBSS4041NZ SOT223 (SC-73) 7 15 17.5 PBSS4041PT SOT23 PBSS4041PX SOT89 (SC-62) 5 15 40 PBSS4041PZ SOT223 (SC-73) 5.7 15 29
NPN
PNP
NPN
PNP
CEO
(V)
20
60
IC
(A)
4.3 8 36
3.5 8 55
3.8 8 46
2.7 8 80
ICM (A)
RCEsat typ (mΩ) @ IC;
I
C/IB
= 10
Product News : Low V package
Key features
} Exposed heat sink for excellent thermal and
electrical conductivity } Power dissipation capability (P } Small footprint of 2 x 2 mm and height of
0.65 mm
} Ideal for mobile and battery-driven
applications
) of > 1 W
tot
(BISS) transistors in SOT1061
CEsat
Performance comparison SOT1061 versus SOT89
PBSS304PX
60 V
V
CEO
4.2 A
I
c
min @ 2 A
h
FE
V
CEsat
V
CEsat
typ @ 0.5 A / 50 mA 35 mV typ @ 4 A / 400 mA 150 mV
SOT89 (SC-62)
150
75% space reduction on PCB
PBSS5560PA
V
60 V
CEO
5 A
I
c
min @ 2 A
h
FE
V
typ@0.5 A / 50 mA 35 mV
CEsat
typ@4 A / 400 mA 180 mV
V
CEsat
150
SOT1061
Double transistors
V
Type Package Polarity
PBSS4021SN PBSS4021SPN NPN/PNP 7.5/6.3 15 25/36 PBSS4021SP PNP/PNP 6.3 15 36 PBSS4041SN NPN/NPN PBSS4041SPN NPN/PNP 6.7/5.9 15/10 32/47 PBSS4041SP PNP/PNP 5.9 10 47
Product overview - Low V
SOT96 (SO8)
CEsat
NPN/NPN
devices, optimized for high-speed switching applications
CEO
(V)
20
60
IC
(A)
7.5 15 25
6.7 15 32
ICM (A)
RCEsat typ (mΩ) @ IC;
I
C/IB
Single transistors
V
Type Package Polarity
PBSS4032NT SOT23 PBSS4032ND SOT457 (SC-74) 3.5 6 50 PBSS4032NX SOT89 (SC-62) 4.7 10 45 PBSS4032NZ SOT223 (SC-73) 4.9 10 45 PBSS4032PT SOT23 PBSS4032PD SOT457 (SC-74) 2.7 5 88 PBSS4032PX SOT89 (SC-62) 4.2 10 58 PBSS4032PZ SOT223 (SC-73) 4.4 10 58
NPN
PNP
CEO
(V)
30
IC
(A)
2.6 5 76
2.4 5 110
ICM (A)
RCEsat typ (mΩ) @ IC;
I
C/IB
Double transistors
V
Type Package Polarity
PBSS4032SN PBSS4032SP PNP/PNP 4.8 10 65 PBSS4032SPN NPN/PNP 5.7/4.8 10 45/65
SOT96 (SO8)
NPN/NPN
CEO
(V)
30
IC
(A)
5.7 10 45
ICM (A)
RCEsat typ (mΩ) @ IC;
I
C/IB
Package overview with body size
SOT23
2.9 x 1.3 x 1.0 mm
SOT457 (SC-74)
2.9 x 1.5 x 1.0 mm
SOT89 (SC-62)
4.5 x 2.5 x 1.5 mm
SOT223 (SC-73)
6.5 x 3.5 x 1.65 mm
SOT96 (SO8)
4.9 x 3.9 x 1.75 mm
= 10
= 10
= 10
Body dimensions:
4.5 x 2.5 mm = 11.3 mm
2
1.5 mm height 0.65 mm height
Body dimensions:
2.0 x 2.0 mm = 4 mm
SOT1061 minimized outline and solder pattern
Low V
Type Polarity V
PBSS4612PA
PBSS4620PA 20 6.0 7.0 280/440 33 20 275
PBSS4330PA 30 3.0 5.0 300/465 75* 40 300*
PBSS4630PA 30 6.0 7.0 280/450 35 21 275
PBSS4560PA 60 6.0 7.0 280/440 34 22 290
PBSS4580PA 80 5.6 7.0 270/425 40 25 320
PBSS8510PA 100 5.2 6.0 180/285 48 30 340
PBSS5612PA
PBSS5620PA 20 6.0 7.0 230/345 39 25 350
PBSS5330PA 30 3.0 5.0 200/320 75* 45 320*
PBSS5630PA 30 6.0 7.0 230/345 39 25 350
PBSS5560PA 60 5.0 6.0 180/265 35 35 450
PBSS5580PA 80 4.0 5.0 180/265 65 40 420
PBSS9410PA 100 2.7 4.0 180/295 110 45 450
* IC/IB = 10
(BISS) transistors in SOT1061
CEsat
CEO
NPN
PNP
h
(V) IC (A) ICM (A)
12 6.0 7.0 280/440 33 20 275
12 6.0 7.0 220/335 33 20 300
FE
(min/typ)
R @ I
CEsat
C
typ (mΩ);
; IC/IB = 20
V
typ (mV)
CEsat
=0,5 A; IB=50 mA
@ I
C
V
@ I
CEsat
C
; IC/IB = 20
2
max (mV)
Package dimensions are not true to scale
54
M3D109
M3D088
The complete portfolio
Low V
(BISS) transistors single NPN
CEsat
SOT223
(SC-73)
SOT89
(SC-62)
SOT457
(SC-74)
SOT23 SOT1061 SOT323
(SC-70)
SOT363
(SC-88)
SOT416
(SC-75)
types in bold represent new products
SOT666 SOT883
Package
Size (mm) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.9 x 1.5 x 1.0 2.9 x 1.3 x 1.0 2.0 x 2.0 x 0.65 2.0 x 1.25 x 0.95 2.0 x 1.25 x 0.95 1.6 x 0.8 x 0.77 1.6 x 1.2 x 0.55 1.0 x 0.6 x 0.5
(mW) 1700 1650 750 480 1400 350 430 250 500 250
P
tot
V
CEO
(V)
12
15 0.5 1.0
20
30
40
50
60
80
100
R
I
I
C
(A)
CM
(A)
h
FE
min/typ
@ I
@ V
C
(A)
CEsat
CE
(mΩ);
(V)
= 10
I
C/IB
5.3 10.6 300/530 0.5 2 27
5.8 11.6 300/530 0.5 2 29
6.0 7.0 280/440
200/325
0.5
0.01
2 33
2 360 - 250 0.5 0.05 PBSS2515M
200/425 0.01 2 300 200 250 0.5 0.05 PBSS2515E
1.0 3.0 350/470 0.1 2 220 110
4.0 220/410 0.5 2 140 70 350 2 0.2 PBSS4220V
2.0
5.0 220/330 0.1 2 80 45 310 3 0.3 PBSS4320T
3.0 5.0 220/390 0.5 2 85 40 310 3 0.3 PBSS4320X
4.0 15.0 300/450 0.5 2 50 30 280 4 0.4 PBSS301ND
4.3 8.0 300/550 0.5 2 36 21 220 4 0.2 PBSS4021NT
5.0 10.0 300/450 0.5 2 32 35 220 5 0.5 PBSS4520X
5.3 10.6 300/570 0.5 2 27
5.8 10.2 300/570 0.5 2 30
6.0 7.0 280/440 0.5 2 33
7.0 15.0 300/550 0.5 2 19 12 210 7 0.35 PBSS4021NX
8.0 20.0 300/550 0.5 2 14 9 170 8 0.4 PBSS4021NZ
1.0 3.0 300/450 0.5 2 240 120
2.0 3.0 300/450 0.5 2 120 70 320 2 0.2 PBSS4230T
2.6 5.0 300/500 0.5 2 76 80 320 3 0.3 PBSS4032NT
3.0 5.0 300/490 0.5 2 80 45 300 3 0.3 PBSS4330X
3.0 5.0 300/465 0.5 2 75 40 300 3 0.3 PBSS4330PA
3.5 6.0 300/500 0.5 2 50 70 300 4 0.4 PBSS4032ND
4.7 10.0 300/500 0.5 2 45 57 250 4 0.4 PBSS4032NX
5.1 10.2 300/480 0.5 2 30
5.4 10.0 300/500 0.5 2 45 57 340 4.9 0.27 PBSS4032NZ
5.5 11.0 300/480 0.5 2 31
6.0 7.0 280/450 0.5 2 35
0.5 1.0
200/550 0.01 2 380 200
200/350 0.01 2 380 190 250 0.5 0.05 PBSS2540E
3.0 300/ - 0.5 5 150 70 440 2 0.2 PBSS4140V
1.0
300/440 0.5 5 240 130 500 1 0.1 PBSS4140U
2.0
300/510 0.5 5 230 120 500 1 0.1 PMMT491A
300/420 0.5 5 150 130 500 1 0.1 PBSS4140T
300/400 0.5 5 150 70 400 2 0.2 PBSS4240V
2.0 3.0
350/470 0.1 2 120 70 320 2 0.2 PBSS4240Y
300/450 0.5 2 120 70 320 2 0.2 PBSS4240T
15.0 300/520 0.5 2 55 35 300 4 0.4 PBSS302ND
4.0
10.0 300/500 0.5 2 40 21 355 5 0.5 PBSS4540X
5.0 10.0 300/500 0.5 2 42 25 355 5 0.5 PBSS4540Z
2.0 5.0
300/495 0.5 2 100 60 260 2 0.2 PBSS4350T
300/ - 0.5 2 160 90
200/280 0.5 2 110 65 290 2 0.2 PBSS4350D
3.0 5.0
300/460 0.5 2 75 50 370 3 0.3 PBSS4350X
200/280 0.5 2 110 60
200/400 0.5 5 200 110 250 1 0.1 PBSS4160V
1.0 2.0
200/420 0.5 5 230 120 280 1 0.1 PBSS4160U
200/350 0.5 5 200 110 250 1 0.1 PBSS4160T
3.0 6.0 345/570 0.5 2 65 40 260 3 0.3 PBSS303ND
3.8 8.0 300/500 0.5 2 46 29 200 3 0.3 PBSS4041NT
4.7 9.4 300/520 0.5 2 37
5.2 10.4 300/520 0.5 2 39
6.0 7.0 280/440 0.5 2 34
6.2 15.0 300/500 0.5 2 25 17 230 6 0.3 PBSS4041NX
7.0 15.0 300/500 0.5 2 17.5 13 195 7 0.35 PBSS4041NZ
3.0 6.0 240/360 0.5 2 67 40 255 3 0.3 PBSS304ND
4.0 10.0 250/400 0.5 2 43
4.6 9.2 300/470 0.5 2 37
5.1 10.2 300/470 0.5 2 38
5.6 7.0 270/425 0.5 2 40
150/400 0.25 10 160 80 200 1 0.1 PBSS8110Y
150/300 0.25 10 165 70 200 1 0.1 PBSS8110T
1.0 3.0
150/290 0.25 10 160 75 200 1 0.1 PBSS8110D
150/290 0.25 10 165 73 200 1 0.1 PBSS8110X
150/290 0.25 10 160
3.0 4.0 170/275 0.5 2 72 45 360 4 0.4 PBSS305ND
4.5 9.0 200/330 0.5 2 38
5.1 10.2 200/330 0.5 2 43
5.2 6.0 180/285 0.5 2 48
typ
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
V
typ
CEsat
(mV);
IC = 0.5 A;
IB = 0.05 A
V
CEsat
max
(mV)
@ I
@ I
C
(A)
B
(A)
18 200 5.3 0.265 PBSS301NX
18 235 5.8 0.29 PBSS301NZ
20 275 6 0.3 PBSS4612PA
2)
250 1 0.05 PBSS4120T
20 200 5.3 0.265 PBSS302NX
20 250 5.8 0.29 PBSS302NZ
20 275 6 0.3 PBSS4620PA
2)
270 1 0.05 PBSS4130T
3)
3)
20 220 5.1 0.255 PBSS303NX
3)
3)
20 240 5.5 0.275 PBSS303NZ
21 275 6 0.3 PBSS4630PA
2)
250 0.5 0.05 PBSS2540M
2)
320 2 0.2 PBSS4250X
1)
290 2 0.2 PBSS4350Z
25 245 4.7 0.235 PBSS304NX
25 280 5.2 0.26 PBSS304NZ
22 290 6 0.3 PBSS4560PA
25 230 4 0.2 PBSS4480X
25 240 4.6 0.23 PBSS305NX
25 270 5.1 0.255 PBSS305NZ
25 320 5.6 0.28 PBSS4580PA
73 200 1 0.1 PBSS8110Z
27 245 4.5 0.225 PBSS306NX
27 300 5.1 0.255 PBSS306NZ
30 340 5.2 0.26 PBSS8510PA
(SC-101)
1)
IC/IB = 20
2)
V
(max)
CEsat
3)
optimized for high speed switching
76
The complete portfolio
M3D109
M3D088
Low V
(BISS) transistors single PNP
CEsat
SOT223
(SC-73)
SOT89 (SC-62)
SOT457
(SC-74)
SOT23 SOT1061 SOT323
(SC-70)
SOT363
(SC-88)
SOT416
(SC-75)
types in bold represent new products
SOT666 SOT883
Package
Size (mm) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.9 x 1.5 x 1.0 2.9 x 1.3 x 1.0 2.0 x 2.0 x 0.65 2.0 x 1.25 x 0.95 2.0 x 1.25 x 0.95 1.6 x 0.8 x 0.77 1.6 x 1.2 x 0.55 1.0 x 0.6 x 0.5
(mW) 1700 1650 750 480 1400 350 430 250 500 250
P
tot
V
(V)
I
CEO
C
(A)
5.3 10.6 250/400 0.5 2 28
5.7 11.4 250/400 0.5 2 30
12
6.0 7.0 220/335 0.5 2 33
15 0.5 1.0
1.0 2.0 300/450 0.1 2 250 125
2.0
3.0 5.0
3.5 8.0 250/400 0.5 2 55 35 375 4 0.2 PBSS4021PT
20
4.0 15.0 250/400 0.5 2 50 35 280 4 0.4 PBSS301PD
5.0 10.0 300/430 0.5 2 34 45 270 5 0.5 PBSS5520X
5.1 10.2 250/370 0.5 2 32
5.5 11.0 250/370 0.5 2 34
6.0 7.0 230/345 0.5 2 39
R
I
CM
(A)
h
FE
min/typ
@ I
@ V
C
(V)
CEsat
CE
(mΩ);
(V)
I
C/IB
= 10
200/260 0.01 2 300 150 250 0.5 0.05 PBSS3515M 200/325 0.01 2 300 150 250 0.5 0.05 PBSS3515E
4.0 220/440 0.1 2 140 75 390 2 0.2 PBSS5220V
3.0 225/ - 0.5 2 115 80
5.0 220/420 0.5 2 75 50 210 2 0.2 PBSS5320T 200/ - 0.5 2 85 80
220/450 0.5 2 90 50 300 3 0.3 PBSS5320X
1)
typ
1)
1)
1)
1)
1)
V
typ
CEsat
(mV);
IC = 0.5 A;
IB = 0.05 A
V
CEsat
max (mV)
@ I
@ I
C
(A)
B
(A)
20 210 5.3 0.265 PBSS301PX 20 245 5.7 0.285 PBSS301PZ 20 300 6 0.3 PBSS5612PA
2)
250 1 0.05 PBSS5120T
2)
225 2 0.2 PBSS5220T
2)
400 3 0.3 PBSS5320D
25 230 5.1 0.255 PBSS302PX 25 265 5.5 0.275 PBSS302PZ 25 350 6 0.3 PBSS5620PA
6.2 15.0 250/400 0.5 2 23 18 240 6 0.3 PBSS4021PX
6.6 20.0 250/400 0.5 2 22 16 240 7 0.35 PBSS4021PZ
1.0 3.0 260/350 0.5 2 220 110 225 1 0.05 PBSS5130T
2.0 3.0 300/450 0.1 2 160 70 350 2 0.2 PBSS5230T
2.4 5.0 200/320 0.5 2 110 95 330 2 0.2 PBSS4032PT
2.7 5.0 200/350 0.5 2 88 87 395 3 0.3 PBSS4032PD
3)
3)
3.0 5.0 200/380 0.5 2 80 50 320 3 0.3 PBSS5330X
3.0 5.0 200/320 0.5 2 75 45 320 3 0.3 PBSS5330PA
30
4.2 10.0 200/350 0.5 2 58 70 345 4 0.4 PBSS4032PX
4.4 10.0 200/350 0.5 2 58 70 400 4 0.2 PBSS4032PZ
5.1 10.2 250/400 0.5 2 32
5.3 10.6 250/400 0.5 2 35
6.0 7.0 200/335 0.5 2 39
0.5 1.0
200/380 0.01 2 440 220 350 0.5 0.05 PBSS3540M 200/380 0.01 2 440 230 350 0.5 0.05 PBSS3540E
1)
1)
1)
25 230 5.1 0.255 PBSS303PX 25 265 5.3 0.265 PBSS303PZ 25 350 6 0.3 PBSS5630PA
3)
3)
300/ - 0.1 5 200 120 310 1 0.1 PBSS5140V
1.0 2.0
40
1.8 3.0 300/450 0.1 5 185 100 530 2 0.2 PBSS5240V
2.0 3.0
4.0
5.0 10.0 250/350 0.5 2 55 40
2.0
50
3.0 5.0
300/520 0.1 5 230 130 500 1 0.1 PBSS5140U 300/800 0.1 5 250 130 500 1 0.1 PMMT591A 300/510 0.1 5 230 130 500 1 0.1 PBSS5140T
300/ - 0.1 2 200 110
2)
350 2 0.2 PBSS5240Y
300/450 0.1 2 150 70 350 2 0.2 PBSS5240T
15.0 200/310 0.5 2 55 46 300 4 0.4 PBSS302PD
10.0 250/370 0.5 2 45 33 375 5 0.5 PBSS5540X
3.0 200/ - 0.5 2 150 90
200/360 0.5 2 90 55 270 2 0.2 PBSS5350T
5.0 200/ - 0.5 2 160 90
1)
160 2 0.2 PBSS5540Z
2)
300 2 0.1 PBSS5250T
2)
320 2 0.2 PBSS5250X 200/300 0.5 2 120 70 300 2 0.2 PBSS5350D 200/375 0.5 2 120 70 390 3 0.3 PBSS5350X 200/300 0.5 2 120 70 300 2 0.2 PBSS5350Z 150/250 0.5 5 220 120 330 1 0.1 PBSS5160V
1.0 2.0
150/250 0.5 5 255 135 340 1 0.1 PBSS5160U 150/250 0.5 5 220 120 330 1 0.1 PBSS5160T
2.7 8.0 200/300 0.5 2 80 49 360 3 0.3 PBSS4041PT
3.0 6.0 180/265 0.5 2 70 55 290 3 0.3 PBSS303PD
60
4.2 8.4 200/295 0.5 2 53
4.5 9.0 200/295 0.5 2 59
6.0 170/260 0.5 2 35
5.0
15.0
5.7
3.0
200/300 0.5 2 40 30 300 5 0.5 PBSS4041PX 200/300 0.5 2 29 22 285 6 0.3 PBSS4041PZ
15.0
5.0
155/225 0.5 2 71 55 290 3 0.3 PBSS304PD
5.0 180/265 0.5 2 65
80
4.0
10.0 200/300 0.5 2 50 35 380 5 0.5 PBSS5480X
8.0 200/280 0.5 2 43 36 240 4 0.4 PBSS305PX
4.5 9.0 200/280 0.5 2 69
1)
1)
1)
1)
1)
35 310 4.2 0.21 PBSS304PX 35 375 4.5 0.225 PBSS304PZ 35 450 5 0.25 PBSS5560PA
40 420 4 0.2 PBSS5580PA
36 450 4.5 0.225 PBSS305PZ
150/ - 0.25 5 170 93 320 1 0.1 PBSS9110Y
1.0 3.0
150/350 0.5 5 170 150/350 0.5 5 170 100 320 1 0.1 PBSS9110D
95 320 1 0.1 PBSS9110T
150/350 0.5 5 170 90 320 1 0.1 PBSS9110X
100
2.0 3.0 175/275 0.5 2 88 65 250 2 0.2 PBSS305PD
2.7 4.0 180/295 0.5 2 110
150/ - 0.5 5 170 90 320 1 0.1 PBSS9110Z
1)
45 450 2.7 0.135 PBSS9410PA
3.7 7.4 200/300 0.5 2 52 45 300 4 0.4 PBSS306PX
4.1 8.2 200/300 0.5 5 57 45 325 4.1 0.41 PBSS306PZ
(SC-101)
1)
IC/IB = 20
2)
V
(max)
CEsat
3)
optimized for high speed switching
98
Low V
MSE264
OUT1
IN1
OUT2
IN2
on/off
on/off
M3D315
006aaa813
R1
R2
TR2
TR1
8
7
6
5
1
2
3
4
6 5 4
1
2 3
R2
TR1
TR2
R1
sym036
6 5 4
1
2 3
R2
TR1
TR2
R1
sym036
6 5 4
1
2 3
R2
TR1
TR2
R1
006aab506
M3D315
M3D088
Package
(BISS) transistors double
CEsat
SOT96
(SO8)
types in bold represent new products
SOT457
(SC-74)
SOT363
(SC-88)
SOT666
Low V
Package
(BISS) load switches
CEsat
types in bold represent new products
SOT96 (SO8) SOT457 (SC-74) SOT363 (SC-88) SOT666
Size (mm) 4.9 x 3.9 x 1.75 2.9 x 1.5 x 1.0 2.0 x 1.25 x 0.95 1.6 x 1.2 x 0.55
P
(mW) 2000
tot
typ
V
V
CEO
(V)
15 0.5
20
I
C
Polarity
(A)
h
min
@ I
FE
C
(A)
2 x NPN 200 0.01 2 170
2 x PNP 200 0.01 2 170
NPN/PNP 200 0.01 2 170
NPN/PNP 200 0.01 2 170
300
7.5 NPN/NPN
6.3 PNP/PNP
0.5 2 15 150 4 0.2 PBSS4021SN
250
0.5 2 24
@ V
CEsat
(mV);
CE
(V)
= 0.5 A;
I
C
= 0.05 A
I
B
V
CEsat
max
(mV)
1)
250 0.5 0.05 PBSS2515VS
1)
250 0.5 0.05 PBSS3515VS
1)
250 0.5 0.05 PBSS2515VPN
1)
250 0.5 0.05 PBSS2515YPN
225
@ I
@ I
C
B
(A)
(A)
4 0.2 PBSS4021SP
7.5 / 6.3 NPN/PNP 300/250 0.5 2 15/24 150/225 4 0.2 PBSS4021SPN
5.7 NPN/NPN 300 0.5 2 57 250 4 0.4 PBSS4032SN
30
4.8 PNP/PNP
200
0.5 2 70
390
4 0.4 PBSS4032SP
5.7 / 4.8 NPN/PNP 300/200 0.5 2 57/70 250/390 4 0.4 PBSS4032SPN
1.0 NPN/PNP 300/250 0.5 5 130/150 500 1 0.1 PBSS4140DPN
40
2.0 NPN/PNP
2 x NPN
50 2.7
2 x PNP
NPN/PNP
2 x NPN
2 x PNP
1.0
60
NPN/PNP
6.7 NPN/NPN
5.9 PNP/PNP
6.7 / 5.9 NPN/PNP
1)
Ic/Ib=20
2)
Device mounted on a ceramic PCB, AI2O3, standard footprint.
3)
Optimized for high speed switching
300/250
300
200
300/200
200
150
200/150
300
200
300/200
0.5 5 80/100
0.5 2 50
0.5 2 60
0.5 2 50/60
0.5 5 115
0.5 5 120
0.5 5 115/120
0.5 2 20
0.5 2 35
0.5 2 20/35
400/530
340/370
250/330
190/330
2 0.2 PBSS4240DPN
340
2.7 0.27 PBSS4350SS
370
2.7 0.27 PBSS5350SS
2.7 0.27 PBSS4350SPN
250
1 0.1 PBSS4160DS
330
1 0.1 PBSS5160DS
1 0.1 PBSS4160DPN
190
4 0.2 PBSS4041SN
330
4 0.2 PBSS4041SP
4 0.2 PBSS4041SPN
2)
750 430 500
3)
3)
3)
Dual load switch using double BISS transistors and double RETs
Size (mm) 4.9 x 3.9 x 1.75 2.9 x 1.5 x 1.0 2.0 x 1.25 x 0.95 1.6 x 1.2 x 0.55
P
(mW) 1500
tot
I
V
CEO
(V)
(A)
V
C
max (mV); IC = 0.5A;
CEsat
IB = 0.05A
R1, R2 (kΩ)
1)
750
1)
600
1)
300
2)
300
2)
2.2 PBLS1501Y PBLS1501V
15 0.5 250
4.7 PBLS1502Y PBLS1502V
10 PBLS1503Y PBLS1503V
22 PBLS1504Y PBLS1504V
2.2 PBLS2001D
1 150
4.7
10 PBLS2003D
PBLS2002D
22 PBLS2004D
20
1.8 70
3 75
2.2
4.7 PBLS2022D
10 PBLS2023D
22
2.2
4.7
10
PBLS2001S
PBLS2002S
PBLS2003S
PBLS2021D
PBLS2024D
2.2 PBLS4001Y PBLS4001V
4.7 PBLS4002Y PBLS4002V
0.5 350
10 PBLS4003Y PBLS4003V
22 PBLS4004Y PBLS4004V
40
1 170
1 180
60
1.5 100
1)
Device mounted on a ceramic PCB, Al2O3, standard footprint
2)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
47 PBLS4005Y PBLS4005V
2.2
4.7
2.2
4.7
2.2
4.7
10
22
47
10
22
47
PBLS6021D
PBLS6022D
10
22
PBLS6023D
PBLS6024D
PBLS4001D
PBLS4002D
PBLS4003D
PBLS4004D
PBLS4005D
PBLS6001D
PBLS6002D
PBLS6003D
PBLS6004D
PBLS6005D
Low V
Package
Size (mm)
P
tot
(BISS) RETs
CEsat
(mW)
(V) IC (mA) R1 (kΩ) R2 (kΩ)
V
CEO
40 600
R1 = R2
R1 ≠ R2
1 1 PBRN113ET PBRP113ET
2.2 2.2 PBRN123ET PBRP123ET
1 10 PBRN113ZT PBRP113ZT
2.2 10 PBRN123YT PBRP123YT
SOT23
2.9 x 1.3 x 1.0
250
NPN PNP
Key features
} Low V
(BISS) transistor and resistor-equipped
CEsat
transistor (RET) in one package
} Low saturation voltage } Low ‘threshold’ voltage (< 1 V) compared to MOSFET } Low drive power required } Range of small, very small and ultra small packages
Key benefits
} Smaller end products } Reduced component count } Less sourcing effort } Fewer solder points increase reliability } Cost reduction } More efficient, cooler running systems
Key applications
} Supply line switch } Battery charger } High-side switch for LEDs, drivers and backlights } Portable equipment
BISS load switch
1110
High voltage low V
M3D088
M3D109
Package
(BISS) transistors
CEsat
SOT223 (SC-73) SOT89 (SC-62)
types in bold represent new products
SOT23
Size (mm)
P
(mW)
tot
Polarity V
NPN
PNP
1)
Collector-emitter peak voltage
1)
CESM
- 150
500
- 150
500
V
(V) IC (A)
CEO
400
500
400
500
6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.9 x 1.3 x 1.0
1700 1300 250
1 PBHV8115Z PBHV8115T
2 PBHV8215Z
0.5 PBHV8540Z PBHV8540T
1 PBHV8140Z
0.15 PMBTA45
0.4 PBHV8550Z
1 PBHV9115Z PBHV9115X PBHV9115T
2 PBHV9215Z
0.25 PBHV9040Z PBHV9040T
0.5 PBHV9540Z
0.15 PBHV9050T
0.25 PBHV9050Z
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All rights reserved. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contrac t, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other indus trial or intellectual proper ty rights.
Date of release: May 2010 Document order number: 9397 750 1690 8 Printed in the Netherlands
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