transistors live up to their name as Breakthrough In Small Signal (BISS) transistors. They offer lower
CEsat
power losses with higher efficiency than their standard transistor counterparts, and they deliver the required performance
in smaller packages that save PCB space. Choose from single and double transistors, resistor-equipped transistors (RETs),
or load switches, which combine a low V
Key features
} Low V
and high current capability
CEsat
transistor with a RET in a single package.
CEsat
Reduced power dissipation due to low V
CEsat
} Broad portfolio supports all kinds of applications
} Wide voltage range, including high-voltage types up to
500 V
Key benets
} Optimum power performance while saving space
} Very small packages enable integration of more functions onto
a PCB
} Less heat generation
} Energy saving
} Fewer components by using modules like RETs, double
).
Comparison of a general purpose transistor and
a BISS transistor.
We have shipped more than 1 billion low V
has been designed into all kinds of applications and is used by most of the top manufacturers
(BISS) transistors. Our portfolio, now in its fourth generation,
CEsat
= 40°C
84 mV
37 mV
th
Our new, highly efficient 4
V
and a high-speed switching version.
CEsat
generation low V
(BISS) transistors are available in two optimized versions - an ultra-low
CEsat
The products are available in small SMD packages SOT23, SOT457 (SC-74), SOT89 (SC-62) and SOT223 (SC-73) for single
and SOT96 (SO-8) for double transistors.
Ultra-low V
} These devices introduce a new ultra-low-ohmic substrate
technology and a patented chip metallization architecture
devices optimized for load-switch applications
CEsat
} Electrical performance for low-loss load switching comparable
to available products with twice the size due to doubled
maximum current capability I
(+115%)
C
} Ultra-low saturation voltage due to on-state-resistance
reduced by 60% compared to previous generations of low
V
transistors.
CEsat
Ultra-low on-state-resistance
90
80
(mΩ)
CEsat
R
Low V
70
60
50
40
30
20
10
0
CEsat
Previous
low V
CEsat
transistors
th
Gen
- 60%
R
CEsat
NXP 4
low V
transistors
CEsat
devices optimized for high-speed switching applications
} These devices introduce a new design that combines
} Available in 20 V and 60 V versions
High current capability
5
4
3
c
2
1
0
Previous
low V
CEsat
transistors
+115%
Minimized switching times
th
NXP 4
Gen
low V
CEsat
transistors
I
c
MESH-emitter technology with base contact extraction
electrodes.
} Low on-state resistance down to 50 mΩ, combining high
switching performance with minimized saturation voltages
and power dissipation – an industry first
Size (mm)6.5 x 3.5 x 1.654.5 x 2.5 x 1.52.9 x 1.5 x 1.02.9 x 1.3 x 1.02.0 x 2.0 x 0.652.0 x 1.25 x 0.952.0 x 1.25 x 0.951.6 x 0.8 x 0.771.6 x 1.2 x 0.551.0 x 0.6 x 0.5
(mW)170016507504801400350430250500250
P
tot
V
CEO
(V)
12
150.51.0
20
30
40
50
60
80
100
R
I
I
C
(A)
CM
(A)
h
FE
min/typ
@ I
@ V
C
(A)
CEsat
CE
(mΩ);
(V)
= 10
I
C/IB
5.310.6300/530 0.5227
5.811.6300/5300.5229
6.0 7.0280/440
200/325
0.5
0.01
233
2360-2500.50.05PBSS2515M
200/4250.0123002002500.50.05PBSS2515E
1.03.0350/4700.12220110
4.0220/4100.521407035020.2PBSS4220V
2.0
5.0220/330 0.12804531030.3PBSS4320T
3.05.0220/390 0.52854031030.3PBSS4320X
4.015.0300/4500.52503028040.4PBSS301ND
4.38.0300/5500.52362122040.2PBSS4021NT
5.010.0300/4500.52323522050.5PBSS4520X
5.310.6300/5700.5227
5.810.2300/5700.5230
6.0 7.0280/4400.5233
7.015.0300/5500.52191221070.35PBSS4021NX
8.020.0300/5500.5214917080.4PBSS4021NZ
1.03.0300/4500.52240120
2.03.0300/4500.521207032020.2PBSS4230T
2.65.0300/5000.52768032030.3PBSS4032NT
3.05.0300/4900.52804530030.3PBSS4330X
3.05.0300/4650.52754030030.3PBSS4330PA
3.56.0300/5000.52507030040.4PBSS4032ND
4.710.0300/5000.52455725040.4PBSS4032NX
5.110.2300/4800.5230
5.410.0300/5000.5245573404.90.27PBSS4032NZ
5.511.0300/4800.5231
6.0 7.0280/4500.5235
0.51.0
200/550 0.012380200
200/3500.0123801902500.50.05PBSS2540E
3.0300/ - 0.551507044020.2PBSS4140V
1.0
300/4400.5524013050010.1PBSS4140U
2.0
300/5100.5523012050010.1PMMT491A
300/420 0.5515013050010.1PBSS4140T
300/400 0.551507040020.2PBSS4240V
2.03.0
350/4700.121207032020.2PBSS4240Y
300/4500.521207032020.2PBSS4240T
15.0300/5200.52553530040.4PBSS302ND
4.0
10.0300/500 0.52402135550.5PBSS4540X
5.010.0300/5000.52422535550.5PBSS4540Z
2.05.0
300/4950.521006026020.2PBSS4350T
300/ - 0.5216090
200/2800.521106529020.2PBSS4350D
3.05.0
300/460 0.52755037030.3PBSS4350X
200/280 0.5211060
200/4000.5520011025010.1PBSS4160V
1.02.0
200/420 0.5523012028010.1PBSS4160U
200/3500.5520011025010.1PBSS4160T
3.06.0345/5700.52654026030.3PBSS303ND
3.88.0300/5000.52462920030.3PBSS4041NT
4.79.4300/5200.5237
5.210.4300/5200.5239
6.0 7.0280/4400.5234
6.215.0300/5000.52251723060.3PBSS4041NX
7.015.0300/5000.5217.51319570.35PBSS4041NZ
3.06.0240/3600.52674025530.3PBSS304ND
4.010.0250/4000.5243
4.69.2300/4700.5237
5.110.2300/4700.5238
5.6 7.0270/4250.5240
150/400 0.25101608020010.1PBSS8110Y
150/300 0.25101657020010.1PBSS8110T
1.03.0
150/2900.25101607520010.1PBSS8110D
150/2900.25101657320010.1PBSS8110X
150/2900.2510160
3.04.0170/275 0.52724536040.4PBSS305ND
4.59.0200/330 0.5238
5.110.2200/3300.5243
5.2 6.0180/2850.5248
typ
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
1)
V
typ
CEsat
(mV);
IC = 0.5 A;
IB = 0.05 A
V
CEsat
max
(mV)
@ I
@ I
C
(A)
B
(A)
182005.30.265PBSS301NX
182355.80.29PBSS301NZ
2027560.3PBSS4612PA
2)
25010.05PBSS4120T
202005.30.265PBSS302NX
202505.80.29PBSS302NZ
2027560.3PBSS4620PA
2)
27010.05PBSS4130T
3)
3)
202205.10.255PBSS303NX
3)
3)
202405.50.275PBSS303NZ
2127560.3PBSS4630PA
2)
2500.50.05PBSS2540M
2)
32020.2PBSS4250X
1)
29020.2PBSS4350Z
252454.70.235PBSS304NX
252805.20.26PBSS304NZ
2229060.3PBSS4560PA
2523040.2PBSS4480X
252404.60.23PBSS305NX
252705.10.255PBSS305NZ
253205.60.28PBSS4580PA
7320010.1PBSS8110Z
272454.50.225PBSS306NX
273005.10.255PBSS306NZ
30340 5.2 0.26PBSS8510PA
(SC-101)
1)
IC/IB = 20
2)
V
(max)
CEsat
3)
optimized for high speed switching
76
The complete portfolio
M3D109
M3D088
Low V
(BISS) transistors single PNP
CEsat
SOT223
(SC-73)
SOT89
(SC-62)
SOT457
(SC-74)
SOT23SOT1061SOT323
(SC-70)
SOT363
(SC-88)
SOT416
(SC-75)
types in bold represent new products
SOT666SOT883
Package
Size (mm)6.5 x 3.5 x 1.654.5 x 2.5 x 1.52.9 x 1.5 x 1.02.9 x 1.3 x 1.02.0 x 2.0 x 0.652.0 x 1.25 x 0.95 2.0 x 1.25 x 0.951.6 x 0.8 x 0.771.6 x 1.2 x 0.551.0 x 0.6 x 0.5
Device mounted on a ceramic PCB, AI2O3, standard footprint.
3)
Optimized for high speed switching
300/250
300
200
300/200
200
150
200/150
300
200
300/200
0.5580/100
0.5250
0.5260
0.5250/60
0.55115
0.55120
0.55115/120
0.5220
0.5235
0.5220/35
400/530
340/370
250/330
190/330
20.2PBSS4240DPN
340
2.7 0.27PBSS4350SS
370
2.7 0.27PBSS5350SS
2.7 0.27 PBSS4350SPN
250
10.1PBSS4160DS
330
10.1PBSS5160DS
10.1PBSS4160DPN
190
40.2PBSS4041SN
330
40.2PBSS4041SP
40.2PBSS4041SPN
2)
750430500
3)
3)
3)
Dual load switch using double
BISS transistors and double RETs
Size (mm)4.9 x 3.9 x 1.75 2.9 x 1.5 x 1.02.0 x 1.25 x 0.951.6 x 1.2 x 0.55
P
(mW)1500
tot
I
V
CEO
(V)
(A)
V
C
max (mV); IC = 0.5A;
CEsat
IB = 0.05A
R1, R2 (kΩ)
1)
750
1)
600
1)
300
2)
300
2)
2.2PBLS1501YPBLS1501V
150.5250
4.7PBLS1502YPBLS1502V
10PBLS1503YPBLS1503V
22PBLS1504YPBLS1504V
2.2PBLS2001D
1150
4.7
10PBLS2003D
PBLS2002D
22PBLS2004D
20
1.870
375
2.2
4.7PBLS2022D
10PBLS2023D
22
2.2
4.7
10
PBLS2001S
PBLS2002S
PBLS2003S
PBLS2021D
PBLS2024D
2.2PBLS4001YPBLS4001V
4.7PBLS4002YPBLS4002V
0.5350
10PBLS4003YPBLS4003V
22PBLS4004YPBLS4004V
40
1170
1180
60
1.5100
1)
Device mounted on a ceramic PCB, Al2O3, standard footprint
2)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
47PBLS4005YPBLS4005V
2.2
4.7
2.2
4.7
2.2
4.7
10
22
47
10
22
47
PBLS6021D
PBLS6022D
10
22
PBLS6023D
PBLS6024D
PBLS4001D
PBLS4002D
PBLS4003D
PBLS4004D
PBLS4005D
PBLS6001D
PBLS6002D
PBLS6003D
PBLS6004D
PBLS6005D
Low V
Package
Size (mm)
P
tot
(BISS) RETs
CEsat
(mW)
(V)IC (mA)R1 (kΩ)R2 (kΩ)
V
CEO
40600
R1 = R2
R1 ≠ R2
11PBRN113ETPBRP113ET
2.22.2PBRN123ETPBRP123ET
110PBRN113ZTPBRP113ZT
2.210PBRN123YTPBRP123YT
SOT23
2.9 x 1.3 x 1.0
250
NPNPNP
Key features
} Low V
(BISS) transistor and resistor-equipped
CEsat
transistor (RET) in one package
} Low saturation voltage
} Low ‘threshold’ voltage (< 1 V) compared to MOSFET
} Low drive power required
} Range of small, very small and ultra small packages
Key benefits
} Smaller end products
} Reduced component count
} Less sourcing effort
} Fewer solder points increase reliability
} Cost reduction
} More efficient, cooler running systems
Key applications
} Supply line switch
} Battery charger
} High-side switch for LEDs, drivers and backlights
} Portable equipment
All rights reserved. Reproduction in whole or in part is prohibited without the
prior writ ten consent of the copyright owner. The information presented in
this document does not form part of any quotation or contrac t, is believed
to be accurate and reliable and may be changed without notice. No liability
will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other
indus trial or intellectual proper ty rights.
Date of release: May 2010
Document order number: 9397 750 1690 8
Printed in the Netherlands
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.