NXP BFR92A Schematic [ru]

BFR92A
NPN 5 GHz wideband transistor
Rev. 04 — 2 March 2009 Product data sheet
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NXP Semiconductors
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
2 of 12
NPN 5 GHz wideband transistor BFR92A

FEATURES

High power gain
Low noise figure
Low intermodulation distortion.

APPLICATIONS

RF wideband amplifiers and oscillators.

DESCRIPTION

NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92.

PINNING

PIN DESCRIPTION
1 base 2 emitter
age
12
Top view
Marking code: P2%.
Fig.1 SOT23.
3
MSB003
3 collector

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure I
V
O
collector-base voltage 20 V collector-emitter voltage 15 V collector current (DC) 25 mA total power dissipation Ts≤ 95 °C 300 mW feedback capacitance IC=ic= 0; VCE= 10 V; f = 1 MHz 0.35 pF transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 5 GHz maximum unilateral power gain IC= 15 mA; VCE= 10 V; f = 1 GHz;
=25°C
T
amb
I
= 15 mA; VCE= 10 V; f = 2 GHz;
C
T
=25°C
amb
= 5 mA; VCE= 10 V; f = 1 GHz;
C
Γs= Γ
opt
; T
amb
=25°C
output voltage dim= 60 dB; IC= 14 mA; VCE=10V;
14 dB
8 dB
2.1 dB
150 mV
RL=75Ω;fp+fq−fr= 793.25 MHz

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter 20 V collector-emitter voltage open base 15 V emitter-base voltage open collector 2V collector current (DC) 25 mA total power dissipation Ts≤ 95 °C; note 1; see Fig.3 300 mW storage temperature 65 +150 °C junction temperature 175 °C
is the temperature at the soldering point of the collector pin.
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
3 of 12
NPN 5 GHz wideband transistor BFR92A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s

CHARACTERISTICS

=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure I
V
O
d
2
thermal resistance from junction to soldering point Ts≤ 95 °C; note 1 260 K/W
is the temperature at the soldering point of the collector pin.
collector leakage current IE= 0; VCB=10V −−50 nA DC current gain IC= 15 mA; VCE= 10 V; see Fig.4 65 90 135 collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz;
0.6 pF
see Fig.5 emitter capacitance IC=ic= 0; VEB= 10 V; f = 1 MHz 1.2 pF feedback capacitance IC=ic= 0; VCE= 10 V; f = 1 MHz 0.35 pF transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz;
5 GHz
see Fig.6 maximum unilateral power
gain (note 1)
IC= 15 mA; VCE= 10 V; f = 1 GHz;
T
=25°C
amb
= 15 mA; VCE= 10 V; f = 2 GHz;
I
C
T
=25°C
amb
= 5 mA; VCE= 10 V; f = 1 GHz;
C
Γs= Γ
opt
; T
amb
=25°C;
14 dB
8 dB
2.1 dB
see Figs 13 and 14
= 5 mA; VCE= 10 V; f = 2 GHz;
I
C
Γs= Γ
opt
; T
amb
=25°C;
3 dB
see Figs 13 and 14 output voltage notes 2 and 3 150 mV second order intermodulation
notes 2 and 4; see Fig.16 −−50 dB distortion
Notes
1. G
UM
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim= 60 dB (DIN 45004B); IC= 14 mA; VCE= 10 V; RL=75Ω; VSWR < 2; T Vp=VO at dim= 60 dB; fp= 795.25 MHz; Vq=VO−6 dB; fq= 803.25 MHz; Vr=VO−6 dB; fr= 805.25 MHz; measured at fp+fq−fr= 793.25 MHz.
4. IC= 14 mA; VCE= 10 V; RL=75Ω; VSWR < 2; T Vp= 60 mV at fp= 250 MHz; Vq= 60 mV at fq= 560 MHz; measured at fp+fq= 810 MHz.
2
S
is the maximum unilateral power gain, assuming S12 is zero and .
=25°C
amb
=
G
UM
10 log
--------------------------------------------------------------

1

=25°C
amb
21
2

S
1
S

11
˙
dB
2
22
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
4 of 12
NPN 5 GHz wideband transistor BFR92A
handbook, full pagewidth
L1=L3=5µH choke. L2 =3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
V
BB
75 input
2.2 nF
33 k
L1
1 nF
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
L2
300
3.3 pF
1 nF
DUT
2.2 nF
L3
18
1 nF
0.82 pF
MBB269
V
CC
output
75
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Fig.3 Power derating curve.
MEA425 - 1
o
Ts(
C)
I (mA)
C
MCD074
120
handbook, halfpage
h
FE
80
40
0
0102030
VCE= 10 V; Tj=25°C.
Fig.4 DC current gain as a function of collector
current; typical values.
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
5 of 12
NPN 5 GHz wideband transistor BFR92A
handbook, halfpage
1
C
c
(pF)
0.8
0.6
0.4
0.2
0
0 5 10 20
IC=ic= 0; f = 1 MHz; Tj=25°C.
15
VCB (V)
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
MBB274
handbook, halfpage
6
f
T
(GHz)
4
2
0
0102030
VCE= 10 V; f = 500 MHz; T
amb
=25°C.
I (mA)
C
Fig.6 Transition frequency as a function of
collector current; typical values.
MBB275
30
handbook, halfpage
gain (dB)
20
10
0
0
VCE= 10 V; f = 500 MHz. MSG = maximum stable gain;
= maximum unilateral power gain.
G
UM
510
MSG
G
UM
15
20
Fig.7 Gain as a function of collector current;
typical values.
MBB278
IC (mA)
UM
MBB279
I (mA)
C
25
30
handbook, halfpage
gain (dB)
20
10
25
0
0
VCE= 10 V; f = 1 GHz. MSG = maximum stable gain;
= maximum unilateral power gain.
G
UM
5101520
MSG
G
Fig.8 Gain as a function of collector current;
typical values.
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
6 of 12
NPN 5 GHz wideband transistor BFR92A
G
max
f (MHz)
MBB280
10
4
50
handbook, halfpage
gain (dB)
40
G
UM
30
MSG
20
10
0
10
IC= 5 mA; VCE=10V. GUM= maximum unilateral power gain; MSG = maximum stable gain;
= maximum available gain.
G
max
2
10
3
10
Fig.9 Gain as a function of frequency;
typical values.
G
max
f (MHz)
MBB281
10
4
50
handbook, halfpage
gain (dB)
40
30
20
10
0
10
IC= 15 mA; VCE=10V. GUM= maximum unilateral power gain; MSG = maximum stable gain;
= maximum available gain.
G
max
MSG
G
UM
2
10
3
10
Fig.10 Gain as a function of frequency;
typical values.
40
handbook, halfpage
B
S
(mS)
20
0
1.7
20
40
02040 80
IC= 4 mA; VCE= 10 V; f = 800 MHz.
1.8
2.0
Fig.11 Circles of constant noise figure;
typical values.
2.5
F = 3.0 dB
60
G (mS)
MBB277
S
30
handbook, halfpage
B
S
(mS)
20
10
2.5
0
2.4
10
20
30
0
IC= 14 mA; VCE= 10 V; f = 800 MHz.
20 40 60
Fig.12 Circles of constant noise figure;
typical values.
3.0
MBB276
F = 3.5 dB
G (mS)
S
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
7 of 12
NPN 5 GHz wideband transistor BFR92A
handbook, halfpage
4
F
(dB)
3
2
1
0
VCE=10V.
101
f = 2 GHz
1 GHz
500 MHz
I (mA)
C
Fig.13 Minimum noise figure as a function of
collector current; typical values.
MCD081
handbook, halfpage
2
10
4
F
(dB)
3
2
1
0
2
10
VCE=10V.
10 mA
3
10
MCD082
I = 15 mA
C
5 mA
f (MHz)
4
10
Fig.14 Minimum noise figure as a function of
frequency; typical values.
45
handbook, halfpage
d
im
(dB)
50
55
60
65
70
10 30
VCE= 10 V; VO= 150 mV (43.5 dBmV);
= 793.25 MHz; T
f
p+fq−fr
Measured in MATV test circuit (see Fig.2).
amb
Fig.15 Intermodulation distortion;
typical values.
20
=25°C.
I (mA)
C
MBB282
35
handbook, halfpage
d
2
(dB)
40
45
50
55
60
10 30
VCE= 10 V; VO= 60 mV; fp+fq−fr= 810 MHz; T Measured in MATV test circuit (see Fig.2).
20
I (mA)
C
amb
Fig.16 Second order intermodulation distortion;
typical values.
MBB283
=25°C.
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
8 of 12
NPN 5 GHz wideband transistor BFR92A
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; Zo=50Ω; T
1
0.5
0.2
+ j
0
j
0.2
0.5
=25°C.
amb
1000
1200
10.2 10520.5
800
500
200
100 MHz
1
2
5
10
10
5
2
MBB270
Fig.17 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; T
90°
60°
30°
10 20 30
30°
60°
MBB273
+ ϕ
0°
ϕ
amb
180°
=25°C.
150°
150°
120°
100
MHz
120°
200
1000
90°
500
800
1200
Fig.18 Common emitter forward transmission coefficient (S21); typical values.
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
9 of 12
NPN 5 GHz wideband transistor BFR92A
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; T
90°
60°
60°
30°
0.150.05 0.1
30°
MBB271
+ ϕ
0°
ϕ
amb
180°
=25°C.
150°
150°
120°
120°
1200 MHz
typ
100
90°
1000 800
500
200
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; Zo=50Ω; T
1
0.5
0.2
+ j
0
0
j
0.2
0.5
=25°C.
amb
10.2 10520.5
1000
1200
1
800
500
200
2
5
10
10
100
MHz
5
2
MBB272
Fig.20 Common emitter output reflection coefficient (S22); typical values.
NXP Semiconductors Product specification
Rev. 04 - 2 March 2009
10 of 12
NPN 5 GHz wideband transistor BFR92A

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
A
max.
0.1
1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
0 1 2 mm
scale
e
H
1.9
e
1
0.95
2.5
2.1
L
p
E
0.45
0.15
Qwv
0.55
0.2
0.45
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Rev. 04 - 2 March 2009
11 of 12

Legal information

Data sheet status

BFR92A
NPN 5 GHz wideband transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
[1][2]
Product status
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shallhaveno liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product typenumber(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

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[3]
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Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device.Limitingvalues are stress ratingsonly and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
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at intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
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Contact information

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NXP Semiconductors
BFR92A
NPN 5 GHz wideband transistor

Revision history

Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFR92A_N_4 20090302 Product data sheet - BFR92A_N_3 Modifications: BFR92A_N_3 20080307 Product data sheet - BFR92A_2 BFR92A_2
(9397 750 02766) BFR92A_1 19950901 - - -
Fig.1 on page 2; Figure note changed
19971029 Product specification - BFR92A_1
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 March 2009
Document identifier: BFR92A_N_4
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