Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
L1=L3=5µH choke.
L2 =3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
V
BB
75 Ω
input
2.2 nF
33 kΩ
L1
1 nF
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
L2
300 Ω
3.3 pF
1 nF
DUT
2.2 nF
L3
18 Ω
1 nF
0.82 pF
MBB269
V
CC
output
75 Ω
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
050100200
150
Fig.3 Power derating curve.
MEA425 - 1
o
Ts(
C)
I (mA)
C
MCD074
120
handbook, halfpage
h
FE
80
40
0
0102030
VCE= 10 V; Tj=25°C.
Fig.4DC current gain as a function of collector
current; typical values.
NXP SemiconductorsProduct specification
Rev. 04 - 2 March 2009
5 of 12
NPN 5 GHz wideband transistorBFR92A
handbook, halfpage
1
C
c
(pF)
0.8
0.6
0.4
0.2
0
051020
IC=ic= 0; f = 1 MHz; Tj=25°C.
15
VCB (V)
Fig.5Collector capacitance as a function of
collector-base voltage; typical values.
MBB274
handbook, halfpage
6
f
T
(GHz)
4
2
0
0102030
VCE= 10 V; f = 500 MHz; T
amb
=25°C.
I (mA)
C
Fig.6Transition frequency as a function of
collector current; typical values.
MBB275
30
handbook, halfpage
gain
(dB)
20
10
0
0
VCE= 10 V; f = 500 MHz.
MSG = maximum stable gain;
= maximum unilateral power gain.
G
UM
510
MSG
G
UM
15
20
Fig.7Gain as a function of collector current;
typical values.
MBB278
IC (mA)
UM
MBB279
I (mA)
C
25
30
handbook, halfpage
gain
(dB)
20
10
25
0
0
VCE= 10 V; f = 1 GHz.
MSG = maximum stable gain;
= maximum unilateral power gain.
G
UM
5101520
MSG
G
Fig.8Gain as a function of collector current;
typical values.
NXP SemiconductorsProduct specification
Rev. 04 - 2 March 2009
6 of 12
NPN 5 GHz wideband transistorBFR92A
G
max
f (MHz)
MBB280
10
4
50
handbook, halfpage
gain
(dB)
40
G
UM
30
MSG
20
10
0
10
IC= 5 mA; VCE=10V.
GUM= maximum unilateral power gain; MSG = maximum stable gain;
= maximum available gain.
G
max
2
10
3
10
Fig.9Gain as a function of frequency;
typical values.
G
max
f (MHz)
MBB281
10
4
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10
IC= 15 mA; VCE=10V.
GUM= maximum unilateral power gain; MSG = maximum stable gain;
= maximum available gain.
G
max
MSG
G
UM
2
10
3
10
Fig.10 Gain as a function of frequency;
typical values.
40
handbook, halfpage
B
S
(mS)
20
0
1.7
20
40
0204080
IC= 4 mA; VCE= 10 V; f = 800 MHz.
1.8
2.0
Fig.11 Circles of constant noise figure;
typical values.
2.5
F = 3.0 dB
60
G (mS)
MBB277
S
30
handbook, halfpage
B
S
(mS)
20
10
2.5
0
2.4
10
20
30
0
IC= 14 mA; VCE= 10 V; f = 800 MHz.
204060
Fig.12 Circles of constant noise figure;
typical values.
3.0
MBB276
F = 3.5 dB
G (mS)
S
NXP SemiconductorsProduct specification
Rev. 04 - 2 March 2009
7 of 12
NPN 5 GHz wideband transistorBFR92A
handbook, halfpage
4
F
(dB)
3
2
1
0
VCE=10V.
101
f = 2 GHz
1 GHz
500 MHz
I (mA)
C
Fig.13 Minimum noise figure as a function of
collector current; typical values.
MCD081
handbook, halfpage
2
10
4
F
(dB)
3
2
1
0
2
10
VCE=10V.
10 mA
3
10
MCD082
I = 15 mA
C
5 mA
f (MHz)
4
10
Fig.14 Minimum noise figure as a function of
frequency; typical values.
−45
handbook, halfpage
d
im
(dB)
−50
−55
−60
−65
−70
1030
VCE= 10 V; VO= 150 mV (43.5 dBmV);
= 793.25 MHz; T
f
p+fq−fr
Measured in MATV test circuit (see Fig.2).
amb
Fig.15 Intermodulation distortion;
typical values.
20
=25°C.
I (mA)
C
MBB282
−35
handbook, halfpage
d
2
(dB)
−40
−45
−50
−55
−60
1030
VCE= 10 V; VO= 60 mV; fp+fq−fr= 810 MHz; T
Measured in MATV test circuit (see Fig.2).
20
I (mA)
C
amb
Fig.16 Second order intermodulation distortion;
typical values.
MBB283
=25°C.
NXP SemiconductorsProduct specification
Rev. 04 - 2 March 2009
8 of 12
NPN 5 GHz wideband transistorBFR92A
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; Zo=50Ω; T
1
0.5
0.2
+ j
0
− j
0.2
0.5
=25°C.
amb
1000
1200
10.210520.5
800
500
200
100 MHz
1
2
5
10
∞
10
5
2
MBB270
Fig.17 Common emitter input reflection coefficient (S11); typical values.
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; T
90°
60°
30°
102030
30°
60°
MBB273
+ ϕ
0°
− ϕ
amb
180°
=25°C.
150°
150°
120°
100
MHz
120°
200
1000
90°
500
800
1200
Fig.18 Common emitter forward transmission coefficient (S21); typical values.
NXP SemiconductorsProduct specification
Rev. 04 - 2 March 2009
9 of 12
NPN 5 GHz wideband transistorBFR92A
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; T
90°
60°
60°
30°
0.150.050.1
30°
MBB271
+ ϕ
0°
− ϕ
amb
180°
=25°C.
150°
150°
120°
120°
1200 MHz
typ
100
90°
1000
800
500
200
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
handbook, full pagewidth
IC= 14 mA; VCE= 10 V; Zo=50Ω; T
1
0.5
0.2
+ j
0
0
− j
0.2
0.5
=25°C.
amb
10.210520.5
1000
1200
1
800
500
200
2
5
10
∞
10
100
MHz
5
2
MBB272
Fig.20 Common emitter output reflection coefficient (S22); typical values.
NXP SemiconductorsProduct specification
Rev. 04 - 2 March 2009
10 of 12
NPN 5 GHz wideband transistorBFR92A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leadsSOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
OUTLINE
VERSION
SOT23
A
max.
0.1
1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
012 mm
scale
e
H
1.9
e
1
0.95
2.5
2.1
L
p
E
0.45
0.15
Qwv
0.55
0.2
0.45
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Rev. 04 - 2 March 2009
11 of 12
Legal information
Data sheet status
BFR92A
NPN 5 GHz wideband transistor
Document status
Objective [short] data sheetDevelopmentThis document contains data from the objective specification for product development.
Preliminary [short] data sheet QualificationThis document contains data from the preliminary specification.
Product [short] data sheetProductionThis document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multipledevices.Thelatestproductstatus
information is available on the Internet at URL
[1][2]
Product status
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shallhaveno liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product typenumber(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give anyrepresentations or
warranties, expressed or implied, as to the accuracyor completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limitingvalues are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
http://www.nxp.com/profile/terms, including those pertaining to warranty,
at
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BFR92A_N_420090302Product data sheet-BFR92A_N_3
Modifications:
BFR92A_N_320080307Product data sheet-BFR92A_2
BFR92A_2
(9397 750 02766)
BFR92A_119950901---
• Fig.1 on page 2; Figure note changed
19971029Product specification-BFR92A_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.