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DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D109
BF620; BF622
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 21
2004 Dec 14
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NXP Semiconductors Product data sheet
2
1
2
3
NPN high-voltage transistors BF620; BF622
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Video output stages.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BF621 and BF623.
MARKING
T YPE NUMBER MARKING CODE
BF620 DC
BF622 DA
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
321
sym04
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
BF620 SC-62 plastic surface mounted package; collector pad for good heat
BF622
transfer; 3 leads
SOT89
2004 Dec 14 2
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BF620 − 300 V
BF622 − 250 V
collector-emitter voltage open base
BF620 − 300 V
BF622 − 250 V
emitter-base voltage open collector − 5 V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
amb
≤ 25 °C
note 1 − 0.5 W
note 2 − 0.8 W
note 3 − 1.1 W
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 6 cm2.
2004 Dec 14 3
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
1600
P
tot
(mW)
1200
800
400
0
−75 17512525 75−25
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
(1)
(2)
(3)
Fig.2 Power derating curves.
006aaa238
T
(°C)
amb
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-s)
Notes
1. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copp er, tin-plated and mounting pad for collector 6 cm2.
thermal resistance from junction to
ambient
thermal resistance from junction to
soldering point
in free air
note 1 250 K/W
note 2 156 K/W
note 3 113 K/W
30 K/W
3
10
Z
th
(1)
(K/W)
(2)
(3)
2
10
10
Mounted on FR4 printed-circu i t board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(4)
(5)
(6)
(7)
(8)
(9)
(10)
1
−5
10
−4
10
(3) δ = 0.5.
(4) δ = 0.33.
−3
10
(5) δ = 0.2.
(6) δ = 0.1.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
−2
−1
10
(7) δ = 0.05.
(8) δ = 0.02.
1
(9) δ = 0.01.
(10)δ = 0.
006aaa235
1010
2
10
tp (s)
3
10
2004 Dec 14 5
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NXP Semiconductors Product data sheet
006aaa237
NPN high-voltage transistors BF620; BF622
3
10
Z
th
(K/W)
(1)
2
(2)
10
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−5
10
−4
10
−3
10
−2
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa236
−1
10
1
1010
2
10
tp (s)
3
10
(9) δ = 0.01.
(10)δ = 0.
3
10
Z
th
(K/W)
(1)
2
10
10
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
1
−5
10
−4
10
−3
10
−2
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
−1
10
2
.
1
1010
2
10
tp (s)
3
10
(9) δ = 0.01.
(10)δ = 0.
2004 Dec 14 6
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
C
f
T
FE
CEsat
re
collector-base cut-off curren t IE = 0 A; VCB = 200 V − 10 nA
IE = 0 A; VCB = 200 V; Tj = 150 °C − 10 µA
emitter-base cut-off current IC = 0 A; VEB = 5 V − 50 nA
DC current gain IC = 25 mA; VCE = 20 V 50 −
collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 600 mV
feedback capacitance IC = ic = 0 A; VCE = 30 V; f = 1 MHz − 1.6 pF
transition frequency IC = −10 mA; VCE = 10 V; f = 100 MHz 60 − MHz
2004 Dec 14 7
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NXP Semiconductors Product data sheet
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NPN high-voltage transistors BF620; BF622
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8
w M
D
b
p3
123
b
p2
b
p1
e
1
e
B
A
E
L
p
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
p1
0.48
0.35
b
p2
0.53
0.40
IEC JEDEC JEITA
b
1.8
1.4
p3
c
0.44
0.23
D
E
4.6
2.6
4.4
2.4
REFERENCES
3.0
H
4.25
3.75
L
1.2
0.8
w
p
0.13
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
E
e
e
1
1.5
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NXP Semiconductors Product data sheet
NPN high-voltage transistors BF620; BF622
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the produc t specification.
Notes
1. Please consult the most recently issued document before initiating or comple ting a design.
2. The product status of device(s) desc ribed in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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NXP Semiconductors makes no representation or
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Dec 14 9
60134) may cause permanent damage to
Page 10
NXP Semiconductors
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definitions and disclaimers. No changes were made to the technical content, except for package outline
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Printed in The Netherlands R75/04/pp10 Date of release: 2004 Dec 14 Document order number: 9397 750 13867
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