NXP BF545A, BF545B, BF545C Schematic [ru]

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SOT23

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors

Rev. 4 — 15 September 2011 Product data sheet

1. Product profile

1.1 General description

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

CAUTION

1.2 Features and benefits

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

 Low leakage level (typ. 500 fA)  High gain  Low cut-off voltage (max. 2.2 V for BF545A).

1.3 Applications

 Impedance converters in e.g. electret microphones and infra-red detectors  VHF amplifiers in oscillators and mixers.

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V V

DSS

P y

DS GSoff

tot

drain-source voltage - - 30 V gate-source cut-off

voltage drain current VGS=0V; VDS=15V

total power dissipation T

 forward transfer

admittance

ID=1A; VDS=15V 0.4 - 7.8 V

BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA

 25 C--250mW

amb

VGS=0V; VDS=15V 3 - 6.5 mS

NXP Semiconductors

sym054

d sg

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 source (s) 2drain (d) 3gate (g)

3. Ordering information

Table 3. Ordering information

Type number Package

BF545A - plastic surface mounted package; 3 leads SOT23 BF545B BF545C

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Name Description Version

4. Marking

Table 4. Marking

Type number Marking code

BF545A 20* BF545B 21* BF545C 22*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia. * = W: made in China.

[1]

Product data sheet Rev. 4 — 15 September 2011 2 of 16

NXP Semiconductors

amb

(°C)

0 20015050 100

mbb688

200

100

300

400

tot

(mW)

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

GSO

GDO

tot

stg

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain

lead 10 mm

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

drain-source voltage (DC) - 30 V gate-source voltage open drain - 30 V gate-drain voltage (DC) open source - 30 V forward gate current (DC) - 10 mA total power dissipation T

amb

 25 C storage temperature 65 +150 C junction temperature - 150 C

[1]

-250mW

6. Thermal characteristics

Product data sheet Rev. 4 — 15 September 2011 3 of 16

Fig 1. Power derating curve.

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-a)

[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mou nting pad for the drain

thermal resistance from junction to ambient

lead 10 mm

[1]

500 K/W

NXP Semiconductors

7. Static characteristics

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Table 7. Static characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

(BR)GSS

GSoff

gate-source breakdown voltage IG= 1 A; VDS=0V 30--V gate-source cut-off voltage ID= 200 A; VDS=15V

BF545A 0.4 - 2.2 V BF545B 1.6 - 3.8 V BF545C 3.2 - 7.8 V

=1A; VDS=15V 0.4 - 7.5 V

DSS

drain current VGS=0V; VDS=15V

BF545A 2 - 6.5 mA BF545B 6 - 15 mA BF545C 12 - 25 mA

GSS

y

 forward transfer admittance VGS=0V; VDS=15V 3 - 6.5 mS

y

gate-source leakage current VGS= 20 V; VDS=0V - 0.5 1000 pA

--100 nA

 common source output

= 20 V; VDS=0V;

=125C

VGS=0V; VDS=15V - 40 - S

admittance

Product data sheet Rev. 4 — 15 September 2011 4 of 16

NXP Semiconductors

GSoff

(V)

0 −8−6−2 −4

mbb467

DSS

(mA)

GSoff

(V)

0 −8−6−2 −4

mbb466

4.5

5.5

(mS)

8. Dynamic characteristics

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Table 8. Dynamic characteristics

= 25 C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

iss

rss

input capacitance VDS=15V; f=1MHz

= 10 V - 1.7 - pF

=0V - 3 - pF

reverse transfer capacitance VDS=15V; f=1MHz

= 10 V - 0.8 - pF

= 0 V - 0.9 - pF

common source input conductance

VDS=10V; ID=1mA

f = 100 MHz - 15 - S f = 450 MHz - 300 - S

common source transfer conductance

VDS=10V; ID=1mA

f = 100 MHz - 2 - mS f = 450 MHz - 1.8 - mS

common source reverse conductance

VDS=10V; ID=1mA

f = 100 MHz - 6- S f = 450 MHz - 40 - S

common source output conductance

VDS=10V; ID=1mA

f = 100 MHz - 30 - S f = 450 MHz - 60 - S

VDS = 15 V; Tj = 25 C. VDS = 15 V; VGS = 0 V; Tj = 25 C.

Fig 2. Drain current as a function of gate-source

cut-off voltage; typical values.

Fig 3. Forward transfer admittance as a function of

gate-source cut-off voltage; typical values.

Product data sheet Rev. 4 — 15 September 2011 5 of 16

NXP Semiconductors

GSoff

(V)

0 −8−6−2 −4

mbb465

(μS)

GSoff

(V)

0 −8−6−2 −4

mbb464

100

200

300

DSon

(Ω)

VDS (V)

0161248

mbb462

(mA)

(1)

(2)

(3)

VGS (V)

−30−1−2

mbb463

(mA)

VDS = 15 V; VGS = 0 V; Tj = 25 C. VDS = 100 mV; VGS = 0 V; Tj = 25 C.

Fig 4. Common-source output admittance as a

function of gate-source cut-off voltage; typical values.

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Fig 5. Drain-source on-resistance as a function of

gate-source cut-off voltage; typical values.

BF545A

(1) V

(2) V

(3) V

Fig 6. Typical output characteristics. Fig 7. Typical input characteristics.

Product data sheet Rev. 4 — 15 September 2011 6 of 16

= 25 C.

= 0 V. = 0.5 V. = 1.0 V.

BF545A

= 15 V; Tj = 25 C.

NXP Semiconductors

VDS (V)

0161248

mbb460

(mA)

(1)

(6)

(2)

(3)

(4)

(5)

mbb459

VGS (V)

−60−2−4

(mA)

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

BF545B

= 15 V; Tj = 25 C.

(1) V (2) V (3) V (4) V (5) V (6) V

BF545B

= 25 C.

= 0 V.

= 0.5 V.

= 1.0 V.

= 1.5 V.

= 2.0 V.

= 2.5 V.

Fig 8. Typical output characteristics. Fig 9. Typical input characteristics.

Product data sheet Rev. 4 — 15 September 2011 7 of 16

NXP Semiconductors

VDS (V)

0161248

mbb457

(mA)

(1)

(2)

(3)

(4)

(5) (6)

VGS (V)

−80−2−6 −4

mbb456

(mA)

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

(1) V (2) V (3) V (4) V (5) V (6) V

BF545C

= 25 C.

= 0 V.

= 1.0 V.

= 2.0 V.

= 3.0 V.

= 4.0 V.

= 5.0 V.

BF545C

= 15 V; Tj = 25 C.

Fig 10. Typical output characteristics. Fig 11. Typical input characteristics.

Product data sheet Rev. 4 — 15 September 2011 8 of 16

NXP Semiconductors

mbb461

VGS (V)

−30−1−2

−2

−1

(μA)

−3

mbb458

VGS (V)

−60−2−4

−2

−1

(μA)

−3

mbb455

−2

−1

(μA)

−3

VGS (V)

−80−2−6 −4

mbb454

−10

−1

−10

(pA)

−10

−2

VDG (V)

020168124

(3)

(4)

(2)

(1)

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

BF545A

= 15 V; Tj = 25 C.

Fig 12. Drain current as a function of gate-source

Fig 13. Drain current as a function of gate-source

voltage; typical values.

BF545C

= 15 V; Tj = 25 C.

Fig 14. Drain current as a function of gate-source

voltage; typical values.

Fig 15. Gate current as a function of drain-gate

BF545B

VDS = 15 V; Tj = 25 C.

voltage; typical values.

= 10 mA only for BF545B and BF545C; Tj = 25 C.

= 10 mA.

(1) I

(2) I

= 1 mA.

= 0.1 mA.

(3) I

D GSS

(4) I

voltage; typical values.

Product data sheet Rev. 4 — 15 September 2011 9 of 16

NXP Semiconductors

mbb453

−1

−10

GSS

(pA)

−1

Tj (°C)

−50 150100050 VGS (V)

−10 0−2−6 −4−8

mbb452

0.4

0.6

0.2

0.8

rss

(pF)

VGS (V)

−10 0−2−6 −4−8

mbb451

iss

(pF)

mbb468

f (MHz)

10 10

−1

(mS)

−2

(1)

(2)

VDS = 0 V; VGS = 20 V. VDS = 15 V; Tj = 25 C.

Fig 16. Gate current as a function of junction

temperature; typical values.

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Fig 17. Reverse transfer capacitance as a function of

gate-source voltage; typical values.

VDS = 15 V; Tj = 25 C. VDS = 10 V; ID = 1 mA; T

Fig 18. Typical input capacitance. Fig 19. Common-source input admittance; typical

Product data sheet Rev. 4 — 15 September 2011 10 of 16

= 25 C.

amb

(1) b

(2) g

values.

NXP Semiconductors

mbb469

(mS)

−1

f (MHz)

10 10

(2)

(1)

mbb470

f (MHz)

10 10

−2

−1

(mS)

−3

(1)

(2)

mbb471

−1

(mS)

−2

f (MHz)

10 10

(1)

(2)

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

VDS = 10 V; ID = 1 mA; T

(1) g

(2) b

Fig 20. Common-source forward transfer admittance;

= 25 C.

amb

Fig 21. Common-source reverse transfer admittance;

typical values.

VDS = 10 V; ID = 1 mA; T

(1) b

(2) g

Fig 22. Common-source output admittance; typical values.

amb

= 25 C.

= 10 V; ID = 1 mA; T

(1) b (2) g

typical values.

= 25 C.

amb

Product data sheet Rev. 4 — 15 September 2011 11 of 16

NXP Semiconductors

UNIT

max.

Qwv

REFERENCES

OUTLINE VERSION

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04 06-03-16

IEC JEDEC JEITA

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

w M

v M

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

9. Package outline

Fig 23. Package outline.

Product data sheet Rev. 4 — 15 September 2011 12 of 16

NXP Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

10. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BF545A_BF545B_BF545C v.4 20110915 Product data sheet - BF545A_BF545B_BF545C v.3 Modifications:

BF545A_BF545B_BF545C v.3 (9397 750 13391)

BF545A-B-C v.2 19960729 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Package outline drawings have been updated to the latest version.

20040805 Product data sheet - BF545A-B-C v.2

Product data sheet Rev. 4 — 15 September 2011 13 of 16

NXP Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

11. Legal information

11.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

11.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 4 — 15 September 2011 14 of 16

NXP Semiconductors

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neit her qua lif ied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, custome r (a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct claims result ing from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

11.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 4 — 15 September 2011 15 of 16

NXP Semiconductors

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12 Contact information. . . . . . . . . . . . . . . . . . . . . 15

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

BF545A; BF545B; BF545C

N-channel silicon junction field-effect transistors)

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Document identifier: BF545A_BF545B_BF545C

Date of release: 15 September 2011

NXP BF545A, BF545B, BF545C Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Static characteristics

8. Dynamic characteristics

9. Package outline

10. Revision history

11. Legal information

11.1 Data sheet status

11.2 Definitions

11.3 Disclaimers

11.4 Trademarks

12. Contact information

13. Contents