NXP BCW 61D SMD, BCX 71J SMD Datasheet

Page 1
PNP Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW60, BCX70 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
1)
BCW61..., BCX71...
3
1
2
Type Marking Pin Configuration Package
BCW61A
BCW61B
BCW61C
BCW61D
BCX71G
BCX71H
BCX71J
BCX71K
1
Pb-containing package may be available upon special request
BAs
BBs
BCs
BDs
BGs
BHs
BJs
BKs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1
2007-10-18
Page 2
Maximum Ratings
BCW61..., BCX71...
Parameter
Collector-emitter voltage
Symbol Value Unit
V
BCW61...
BCX71...
Collector-base voltage
V
BCW61...
BCX71...
Emitter-base voltage V
Collector current I
Peak collector current I
Peak base current I
Total power dissipation-
T
71 °C
S
P
Junction temperature T
Storage temperature T
CEO
CBO
EBO
C
CM
BM
tot
j
stg
32
45
32
45
5
100 mA
200
200
330 mW
150 -
-65 ... 150
V
°C
Thermal Resistance Parameter
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
Symbol Value Unit
R
thJS
240
K/W
2
2007-10-18
Page 3
BCW61..., BCX71...
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0 , BCW61...
C
I
= 10 mA, IB = 0 , BCX71...
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0 , BCW61...
C
I
= 10 µA, IE = 0 , BCX71...
C
Emitter-base breakdown voltage
I
= 1 µA, IC = 0
E
Collector-base cutoff current
V
= 32 V, IE = 0
CB
V
= 45 V, IE = 0
CB
V
= 32 V, IE = 0 , TA = 150 °C, BCW61...
CB
V
= 45 V, IE = 0 , TA = 150 °C, BCX71...
CB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
32
45
32
45
-
-
-
-
5 - -
-
-
-
-
-
-
-
-
-
-
-
-
0.02
0.02
20
20
V
µA
Emitter-base cutoff current
V
= 4 V, IC = 0
EB
DC current gain1)
I
= 10 µA, VCE = 5 V, hFE-grp. A/G
C
I
= 10 µA, VCE = 5 V, hFE-grp. B/H
C
I
= 10 µA, VCE = 5 V, hFE-grp. C/J
C
I
= 10 µA, VCE = 5 V, hFE-grp. D/K
C
I
= 2 mA, VCE = 5 V, hFE-grp. A/G
C
I
= 2 mA, VCE = 5 V, hFE-grp. B/H
C
I
= 2 mA, VCE = 5 V, hFE-grp. C/J
C
I
= 2 mA, VCE = 5 V, hFE-grp. D/K
C
I
= 50 mA, VCE = 1 V, hFE-grp. A/G
C
I
= 50 mA, VCE = 1 V, hFE-grp. B/H
C
I
= 50 mA, VCE = 1 V, hFE-grp. C/J
C
I
= 50 mA, VCE = 1 V, hFE-grp. D/K
C
I
EBO
h
FE
- - 20 nA
20
30
40
100
120
180
250
380
60
80
100
110
140
200
300
460
170
250
350
500
-
-
-
-
-
-
-
-
220
310
460
630
-
-
-
-
-
3
2007-10-18
Page 4
DC Electrical Characteristics
BCW61..., BCX71...
Parameter
Characteristics
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.25 mA
C
I
= 50 mA, IB = 1.25 mA
C
Base emitter saturation voltage1)
I
= 10 mA, IB = 0.25 mA
C
I
= 50 mA, IB = 1.25 mA
C
Base-emitter voltage1)
I
= 10 µA, VCE = 5 V
C
I
= 2 mA, VCE = 5 V
C
I
= 50 mA, VCE = 1 V
C
1
Pulse test: t < 300µs; D < 2%
Symbol Values Unit
min. typ. max.
V
CEsat
V
BEsat
V
BE(ON)
-
-
-
-
-
0.55
-
0.12
0.2
0.7
0.83
0.52
0.65
0.78
0.25
0.55
0.85
1.05
0.75
V
-
-
4
2007-10-18
Page 5
AC Characteristics
BCW61..., BCX71...
Transition frequency
I
= 20 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Short-circuit input impedance
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K
C
Open-circuit reverse voltage transf. ratio
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K
C
f
C
C
h
h
T
cb
eb
11e
12e
- 250 - MHz
- 1.5 - pF
- 8 -
-
-
-
-
-
-
-
-
2.7
3.6
4.5
7.5
1.5
2
2
3
k
-
-
-
-
10
-4
-
-
-
-
Short-circuit forward current transf. ratio
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K
C
Open-circuit output admittance
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K
C
Noise figure
I
= 200 µA, VCE = 5 V, f = 1 kHz,
C
f = 200 Hz, R
= 2 kΩ, h
S
-grp. A/K
FE
h
h
F
21e
22e
-
-
-
-
-
-
-
-
200
260
330
520
18
24
30
50
-
-
-
-
-
µS
-
-
-
-
- 2 - dB
5
2007-10-18
Page 6
BCW61..., BCX71...
DC current gain h
V
= 5 V
CE
3
10
5
100
h
FE
10
5
10
5
10
˚C
25
˚C
-50
˚C
2
1
0
-2 2
10
10
-1
FE
= ƒ(I
0
10
)
C
EHP00351BCW 61/BCX 71
Collector-emitter saturation voltage
I
= ƒ(V
C
Ι
C
10
mA
10
2
1
CEsat
), hFE = 40
100
25
-50
EHP00349BCW 61/BCX 71
˚C ˚C ˚C
5
0
10
5
-1
10
0
0.1 0.2 0.3 0.4
V
V 0.5
CEsat
10
1
Ι
10mA
C
Base-emitter saturation voltage
I
= ƒ(V
C
Ι
C
10
10
mA
10
5
10
5
2
1
0
-1
0
), hFE = 40
BEsat
100
˚C ˚C
25
-50
˚C
0.2 0.4 0.8
0.6 V 1.2
V
EHP00348BCW 61/BCX 71
BE sat
Collector current I
V
= 5 V
CE
2
10
Ι
mA
C
1
10
5
0
10
5
100 25 -50
10
10
-1
5
-2
0
˚C
= ƒ(V
C
BE
)
˚C ˚C
0.5 V 1.0
V
EHP00350BCW 61/BCX 71
BE
6
2007-10-18
Page 7
BCW61..., BCX71...
Collector cutoff current I
V
= V
Ι
CB
CBO
10
10 nA
10
10
10
10
4
3
2
1
0
-1
0
CEmax
max
typ
50 100
CBO
= ƒ(T
T
A
)
A
EHP00352BCW 61/BCX 71
Transition frequency f
V
= parameter in V, f = 2 GHz
CE
3
10
MHz
f
T
= ƒ(I
T
)
C
EHP00347BCW 61/BCX 71
5
2
10
5
1
10
150
C
03
10
1
10
55
10
2
Ι
10mA
C
Collector-base capacitance C
Emitter-base capacitance
12
pF
10
)
9
EB
(C
8
CB
C
7
6
5
4
3
2
1
0
0 4 8 12 16
CEB
C
eb
= ƒ(V
cb
= ƒ(V
CB
)
EB
CCB
V
22
VCB(VEB)
)
Total power dissipation P
360
= ƒ(T
tot
)
S
mW
300
270
240
tot
P
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120
°C
T
150
S
7
2007-10-18
Page 8
BCW61..., BCX71...
Permissible Pulse Load
P
totmax/PtotDC
3
10
P
totmax
5
totPDC
2
10
5
1
10
5
0
10
10
= ƒ(t
-6
10-510-410-310
)
p
=
D
t T
h parameter h
V
= 5V
CE
EHP00345BCW 61/BCX 71
t
p
p
T
=
D
h
0
0.005
0.01
2
10
e
h
11e
1
10
5
= ƒ(I
e
) normalized
C
V
= 5 V
CE
EHP00353BCW 61/BCX 71
0.02
0.05
0.1
0.2
0.5
10
h
12e
0
5
h
21e
h
-1
10
-2
s
t
p
10
0
-1 1
10
22e
10
0
5
Ι
10mA
C
h parameter h
I
= 2mA
C
2.0
h
e
1.5
1.0
0.5
0
0
= ƒ(V
e
Ι
= 2 mA
C
CE
10 20
) normalized
EHP00354BCW 61/BCX 71
h
11
h
12
h
22
V
V
CE
30
Noise figure F = ƒ(V
I
= 0.2mA, R
C
20
dB
F
15
10
5
0
-1 2
10
= 2k , f = 1kHz
S
0
10
CE
)
EHP00355BCW 61/BCX 71
10
1
V
10V
CE
8
2007-10-18
Page 9
BCW61..., BCX71...
Noise figure F = ƒ(f)
V
= 5V, ZS = Z
CE
20
F
dB
15
10
5
0
-2 2
10
10
Sopt
-1
10
Noise figure F = ƒ(I
V
= 5V, f = 120Hz
CE
EHP00356BCW 61/BCX 71
20
dB
F
R
= 1 M
15
S
)
C
EHP00357BCW 61/BCX 71
100 k
10 k
10
500
5
1 k
0
0
10
1
10kHz
-3 1
10
f
10
-2
10
-1
10
0
10mA
Ι
C
Noise figure F = ƒ(I
V
= 5V, f = 1kHz
CE
20
dB
F
15
10
5
0
-3 1
10
10
-2
R
)
C
= 1 M
S
10
-1
EHP00358BCW 61/BCX 71
100 kΩ10 k
500
0
10
Ι
C
1k
Noise figure F = ƒ(I
V
= 5V, f = 10kHz
CE
20
dB
F
15
10
500
)
C
EHP00359BCW 61/BCX 71
= 1 M
R
S
100 k
10 k
5
0
10mA
10
1 k
-3 1
10
-2
10
-1
10
0
Ι
10mA
C
9
2007-10-18
Page 10
Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
BCW61..., BCX71...
±0.1
1.3
10˚ MAX.
A
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
10
2.65
8
1.15
2007-10-18
Page 11
BCW61..., BCX71...
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
11
2007-10-18
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