NXP BCW 61D SMD, BCX 71J SMD Datasheet

PNP Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW60, BCX70 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

1)

BCW61..., BCX71...

3

1

2

Type Marking Pin Configuration Package

BCW61A

BCW61B

BCW61C

BCW61D

BCX71G

BCX71H

BCX71J

BCX71K

1

Pb-containing package may be available upon special request

BAs

BBs

BCs

BDs

BGs

BHs

BJs

BKs

1=B

2=E

3=C

SOT23

1

2007-10-18

Maximum Ratings

BCW61..., BCX71...

Parameter

Collector-emitter voltage

Symbol Value Unit

V

BCW61...

BCX71...

Collector-base voltage

V

BCW61...

BCX71...

Emitter-base voltage V

Collector current I

Peak collector current I

Peak base current I

Total power dissipation-

T

≤ 71 °C

S

P

Junction temperature T

Storage temperature T

CEO

CBO

EBO

C

CM

BM

tot

j

stg

32

45

32

45

5

100 mA

200

330 mW

150 -

-65 ... 150

V

°C

Thermal Resistance Parameter

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

Symbol Value Unit

R

thJS

≤ 240

K/W

2

2007-10-18

BCW61..., BCX71...

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BCW61...

C

I

= 10 mA, IB = 0 , BCX71...

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 , BCW61...

C

I

= 10 µA, IE = 0 , BCX71...

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector-base cutoff current

V

= 32 V, IE = 0

CB

V

= 45 V, IE = 0

CB

V

= 32 V, IE = 0 , TA = 150 °C, BCW61...

CB

V

= 45 V, IE = 0 , TA = 150 °C, BCX71...

CB

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

32

45

32

45

-

5 - -

-

0.02

20

V

µA

Emitter-base cutoff current

V

= 4 V, IC = 0

EB

DC current gain1)

I

= 10 µA, VCE = 5 V, hFE-grp. A/G

C

I

= 10 µA, VCE = 5 V, hFE-grp. B/H

C

I

= 10 µA, VCE = 5 V, hFE-grp. C/J

C

I

= 10 µA, VCE = 5 V, hFE-grp. D/K

C

I

= 2 mA, VCE = 5 V, hFE-grp. A/G

C

I

= 2 mA, VCE = 5 V, hFE-grp. B/H

C

I

= 2 mA, VCE = 5 V, hFE-grp. C/J

C

I

= 2 mA, VCE = 5 V, hFE-grp. D/K

C

I

= 50 mA, VCE = 1 V, hFE-grp. A/G

C

I

= 50 mA, VCE = 1 V, hFE-grp. B/H

C

I

= 50 mA, VCE = 1 V, hFE-grp. C/J

C

I

= 50 mA, VCE = 1 V, hFE-grp. D/K

C

I

EBO

h

FE

- - 20 nA

20

30

40

100

120

180

250

380

60

80

100

110

140

200

300

460

170

250

350

500

-

220

310

460

630

-

3

2007-10-18

DC Electrical Characteristics

BCW61..., BCX71...

Parameter

Characteristics

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

Base emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

Base-emitter voltage1)

I

= 10 µA, VCE = 5 V

C

I

= 2 mA, VCE = 5 V

C

I

= 50 mA, VCE = 1 V

C

1

Pulse test: t < 300µs; D < 2%

Symbol Values Unit

min. typ. max.

V

CEsat

V

BEsat

V

BE(ON)

-

0.55

-

0.12

0.2

0.7

0.83

0.52

0.65

0.78

0.25

0.55

0.85

1.05

0.75

V

-

4

2007-10-18

AC Characteristics

BCW61..., BCX71...

Transition frequency

I

= 20 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Short-circuit input impedance

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

C

Open-circuit reverse voltage transf. ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

C

f

C

h

T

cb

eb

11e

12e

- 250 - MHz

- 1.5 - pF

- 8 -

-

2.7

3.6

4.5

7.5

1.5

2

3

kΩ

-

10

-4

-

Short-circuit forward current transf. ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. A/B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/H

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/J

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/K

C

Noise figure

I

= 200 µA, VCE = 5 V, f = 1 kHz,

C

∆

f = 200 Hz, R

= 2 kΩ, h

S

-grp. A/K

FE

h

F

21e

22e

-

200

260

330

520

18

24

30

50

-

µS

-

- 2 - dB

5

2007-10-18

BCW61..., BCX71...

DC current gain h

V

= 5 V

CE

3

10

5

100

h

FE

10

5

10

5

10

˚C

25

˚C

-50

˚C

2

1

0

-2 2

10

-1

FE

= ƒ(I

0

10

)

C

EHP00351BCW 61/BCX 71

Collector-emitter saturation voltage

I

= ƒ(V

C

Ι

C

10

mA

10

2

1

CEsat

), hFE = 40

100

25

-50

EHP00349BCW 61/BCX 71

˚C ˚C ˚C

5

0

10

5

-1

10

0

0.1 0.2 0.3 0.4

V

V 0.5

CEsat

10

1

Ι

10mA

C

Base-emitter saturation voltage

I

= ƒ(V

C

Ι

C

10

mA

10

5

10

5

2

1

0

-1

0

), hFE = 40

BEsat

100

˚C ˚C

25

-50

˚C

0.2 0.4 0.8

0.6 V 1.2

V

EHP00348BCW 61/BCX 71

BE sat

Collector current I

V

= 5 V

CE

2

10

Ι

mA

C

1

10

5

0

10

5

100 25 -50

10

-1

5

-2

0

˚C

= ƒ(V

C

BE

)

˚C ˚C

0.5 V 1.0

V

EHP00350BCW 61/BCX 71

BE

6

2007-10-18

BCW61..., BCX71...

Collector cutoff current I

V

= V

Ι

CB

CBO

10

10 nA

10

4

3

2

1

0

-1

0

CEmax

max

typ

50 100

CBO

= ƒ(T

T

A

)

A

EHP00352BCW 61/BCX 71

Transition frequency f

V

= parameter in V, f = 2 GHz

CE

3

10

MHz

f

T

= ƒ(I

T

)

C

EHP00347BCW 61/BCX 71

5

2

10

5

1

10

150

C

03

10

1

10

55

10

2

Ι

10mA

C

Collector-base capacitance C

Emitter-base capacitance

12

pF

10

)

9

EB

(C

8

CB

C

7

6

5

4

3

2

1

0

0 4 8 12 16

CEB

C

eb

= ƒ(V

cb

= ƒ(V

CB

)

EB

CCB

V

22

VCB(VEB)

)

Total power dissipation P

360

= ƒ(T

tot

)

S

mW

300

270

240

tot

P

210

180

150

120

90

60

30

0

0 15 30 45 60 75 90 105 120

°C

T

150

S

7

2007-10-18

BCW61..., BCX71...

Permissible Pulse Load

P

totmax/PtotDC

3

10

P

totmax

5

totPDC

2

10

5

1

10

5

0

10

= ƒ(t

-6

10-510-410-310

)

p

=

D

t T

h parameter h

V

= 5V

CE

EHP00345BCW 61/BCX 71

t

p

T

=

D

h

0

0.005

0.01

2

10

e

h

11e

1

10

5

= ƒ(I

e

) normalized

C

V

= 5 V

CE

EHP00353BCW 61/BCX 71

0.02

0.05

0.1

0.2

0.5

10

h

12e

0

5

h

21e

h

-1

10

-2

s

t

p

10

0

-1 1

10

22e

10

0

5

Ι

10mA

C

h parameter h

I

= 2mA

C

2.0

h

e

1.5

1.0

0.5

0

= ƒ(V

e

Ι

= 2 mA

C

CE

10 20

) normalized

EHP00354BCW 61/BCX 71

h

11

h

12

h

22

V

CE

30

Noise figure F = ƒ(V

I

= 0.2mA, R

C

20

dB

F

15

10

5

0

-1 2

10

= 2kΩ , f = 1kHz

S

0

10

CE

)

EHP00355BCW 61/BCX 71

10

1

V

10V

CE

8

2007-10-18

BCW61..., BCX71...

Noise figure F = ƒ(f)

V

= 5V, ZS = Z

CE

20

F

dB

15

10

5

0

-2 2

10

Sopt

-1

10

Noise figure F = ƒ(I

V

= 5V, f = 120Hz

CE

EHP00356BCW 61/BCX 71

20

dB

F

R

= 1 M

15

S

)

C

EHP00357BCW 61/BCX 71

Ω

100 k

Ω

10 k

Ω

10

Ω

500

5

Ω

1 k

0

10

1

10kHz

-3 1

10

f

10

-2

10

-1

10

0

10mA

Ι

C

Noise figure F = ƒ(I

V

= 5V, f = 1kHz

CE

20

dB

F

15

10

5

0

-3 1

10

-2

R

)

C

= 1 M

S

10

Ω

-1

EHP00358BCW 61/BCX 71

100 kΩ10 k

500

0

10

Ι

C

1k

Noise figure F = ƒ(I

V

= 5V, f = 10kHz

CE

20

dB

F

Ω

15

10

500

)

C

EHP00359BCW 61/BCX 71

Ω

= 1 M

R

S

Ω

100 k

Ω

10 k

Ω

5

Ω

0

10mA

10

1 k

-3 1

10

-2

10

-1

10

0

Ι

10mA

C

9

2007-10-18

Package Outline

Foot Print

Package SOT23

±0.1

2.9

12

1)

+0.1

0.4

-0.05

1.9

0.25MBC

1) Lead width can be 0.6 max. in dambar area

B

3

C

0.95

0.8

0.15 MIN.

±0.15

2.4

0.2

±0.1

1

0.1 MAX.

10˚ MAX.

0.08...0.15

0...8˚

M

A

BCW61..., BCX71...

±0.1

1.3

10˚ MAX.

A

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

Pin 1

0.8 1.2

EH

4

0.9

s

0.9 0.91.3

Manufacturer

2005, June

Date code (YM)

BCW66

Type code

0.2

Pin 1

3.15

2.13

10

2.65

8

1.15

2007-10-18

BCW61..., BCX71...

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

11

2007-10-18