NXP BCW 61D SMD, BCX 71J SMD Datasheet

PNP Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW60, BCX70 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

1)

BCW61..., BCX71...

3

1

2

Type Marking Pin Configuration Package

BCW61A

BCW61B

BCW61C

BCW61D

BCX71G

BCX71H

BCX71J

BCX71K

1

Pb-containing package may be available upon special request

BAs

BBs

BCs

BDs

BGs

BHs

BJs

BKs

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

SOT23

1

2007-10-18

Maximum Ratings

BCW61..., BCX71...

Parameter

Collector-emitter voltage

Symbol Value Unit

V

BCW61...

BCX71...

Collector-base voltage

V

BCW61...

BCX71...

Emitter-base voltage V

Collector current I

Peak collector current I

Peak base current I

Total power dissipation-

T

≤ 71 °C

S

P

Junction temperature T

Storage temperature T

CEO

CBO

EBO

C

CM

BM

tot

j

stg

32

45

32

45

5

100 mA

200

200

330 mW

150 -

-65 ... 150

V

°C

Thermal Resistance
Parameter

Junction - soldering point

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

1)

Symbol Value Unit

R

thJS

≤ 240

K/W

2

2007-10-18

BCW61..., BCX71...

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BCW61...

C

I

= 10 mA, IB = 0 , BCX71...

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 , BCW61...

C

I

= 10 µA, IE = 0 , BCX71...

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

Collector-base cutoff current

V

= 32 V, IE = 0

CB

V

= 45 V, IE = 0

CB

V

= 32 V, IE = 0 , TA = 150 °C, BCW61...

CB

V

= 45 V, IE = 0 , TA = 150 °C, BCX71...

CB

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

32

45

32

45

-

-

-

-

5 - -

-

-

-

-

-

-

-

-

-

-

-

-

0.02

0.02

20

20

V

µA

Emitter-base cutoff current

V

= 4 V, IC = 0

EB

DC current gain1)

I

= 10 µA, VCE = 5 V, hFE-grp. A/G

C

I

= 10 µA, VCE = 5 V, hFE-grp. B/H

C

I

= 10 µA, VCE = 5 V, hFE-grp. C/J

C

I

= 10 µA, VCE = 5 V, hFE-grp. D/K

C

I

= 2 mA, VCE = 5 V, hFE-grp. A/G

C

I

= 2 mA, VCE = 5 V, hFE-grp. B/H

C

I

= 2 mA, VCE = 5 V, hFE-grp. C/J

C

I

= 2 mA, VCE = 5 V, hFE-grp. D/K

C

I

= 50 mA, VCE = 1 V, hFE-grp. A/G

C

I

= 50 mA, VCE = 1 V, hFE-grp. B/H

C

I

= 50 mA, VCE = 1 V, hFE-grp. C/J

C

I

= 50 mA, VCE = 1 V, hFE-grp. D/K

C

I

EBO

h

FE

- - 20 nA

20

30

40

100

120

180

250

380

60

80

100

110

140

200

300

460

170

250

350

500

-

-

-

-

-

-

-

-

220

310

460

630

-

-

-

-

-

3

2007-10-18

DC Electrical Characteristics

BCW61..., BCX71...

Parameter

Characteristics

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

Base emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

I

= 50 mA, IB = 1.25 mA

C

Base-emitter voltage1)

I

= 10 µA, VCE = 5 V

C

I

= 2 mA, VCE = 5 V

C

I

= 50 mA, VCE = 1 V

C

1

Pulse test: t < 300µs; D < 2%

Symbol Values Unit

min. typ. max.

V

CEsat

V

BEsat

V

BE(ON)

-

-

-

-

-

0.55

-

0.12

0.2

0.7

0.83

0.52

0.65

0.78

0.25

0.55

0.85

1.05

0.75

V

-

-

4

2007-10-18