BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
Rev. 9 — 25 October 2011 Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
BCP56 SOT223 SC-73 - BCP53
BCX56 SOT89 SC-62 TO-243 BCX53
BC56PA SOT1061 - - BC53PA
[1] Valid for all available selection groups.
[1]
Package PNP complement
NXP JEITA JEDEC
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators Power management
Low-side switches MOSFET drivers
Battery-driven devices Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
I
CM
h
FE
[1] Pulse test: tp 300 s; = 0.02.
collector-emitter voltage open base - - 80 V
collector current - - 1 A
peak collector current single pulse; tp 1ms - - 2 A
DC current gain VCE=2V; IC=150mA
selection -10 VCE=2V; IC=150mA
h
FE
selection -16 VCE=2V; IC=150mA
h
FE
[1]
63 - 250
[1]
63 - 160
[1]
100 - 250
NXP Semiconductors
132
4
sym016
2, 4
3
1
321
sym042
1
2
3
Transparent top view
12
3
sym021
3
2
1
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
SOT1061
1base
2emitter
3 collector
3. Ordering information
Table 4. Ordering information
Type number
BCP56 SC-73 plastic surface-mounted package with increased
BCX56 SC-62 plastic surface-mounted package; exposed die pad for
BC56PA HUSON3 plastic thermal enhanced ultra thin small outline
[1] Valid for all available selection groups.
[1]
Package
Name Description Version
heatsink; 4 leads
good heat transfer; 3 leads
package; no leads; 3 terminals; body 2 2 0.65 mm
SOT223
SOT89
SOT1061
BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 25 October 2011 2 of 22
NXP Semiconductors
4. Marking
Table 5. Marking codes
Type number Marking code
BCP56 BCP56
BCP56-10 BCP56/10
BCP56-16 BCP56/16
BCX56 BH
BCX56-10 BK
BCX56-16 BL
BC56PA AZ
BC56-10PA BK
BC56-16PA BL
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 25 October 2011 3 of 22
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
collector-base voltage open emitter - 100 V
collector-emitter voltage open base - 80 V
emitter-base voltage open collector - 5 V
collector current - 1 A
peak collector current single pulse;
1ms
t
p
base current - 0.3 A
peak base current single pulse;
tp 1ms
total power dissipation T
amb
25 C
BCP56
BCX56
BC56PA
junction temperature - 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C
-2A
-0.3A
[1]
-0.65W
[2]
-1.00W
[3]
-1.35W
[1]
-0.50W
[2]
-0.95W
[3]
-1.35W
[1]
-0.42W
[2]
-0.83W
[3]
-1.10W
[4]
-0.81W
[5]
-1.65W
2
.
2
.
2
.
BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 25 October 2011 4 of 22
NXP Semiconductors
T
amb
(°C)
–75 17512525 75–25
006aac676
1.0
0.5
1.5
2.0
P
tot
(W)
0.0
(1)
(2)
(3)
(4)
(5)
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
1.5
P
tot
(W)
1.0
0.5
0.0
–75 17512525 75–25
(1)
(2)
(3)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
006aac674
T
(°C)
amb
1.5
(1)
P
tot
(W)
1.0
0.5
0.0
–75 17512525 75–25
2
2
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(2)
(3)
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
006aac675
T
(°C)
amb
2
2
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
2
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves SOT1061
BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 25 October 2011 5 of 22
NXP Semiconductors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
BCP56
BCX56
BC56PA
thermal resistance from
junction to solder point
BCP56 - - 16 K/W
BCX56 - - 16 K/W
BC56PA - - 20 K/W
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
in free air
[1]
--192K/W
[2]
--125K/W
[3]
--93K/W
[1]
--250K/W
[2]
--132K/W
[3]
--93K/W
[1]
--298K/W
[2]
--151K/W
[3]
--114K/W
[4]
--154K/W
[5]
--76K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
2
.
2
.
BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 25 October 2011 6 of 22
NXP Semiconductors
006aac677
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
–1
10
–5
1010
–2
10
–4
10
2
10
–1
tp (s)
10
–3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;
typical values
3
10
Z
th(j-a)
(K/W)
10
10
2
10
1
–1
–5
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0
0.01
10
–4
FR4 PCB, mounting pad for collector 1 cm
–3
10
–2
2
–1
10
1
1010
006aac678
2
10
tp (s)
Fig 5. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;
typical values
BCP56_BCX56_BC56PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 25 October 2011 7 of 22
3
10
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