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M3D109
BCX54; BCX55; BCX56
NPN medium power transistors
Product specification
Supersedes data of 1999 Apr 19
2001 Oct 10
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages of audio and video amplifiers.
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNPcomplements: BCX51, BCX52 and BCX53.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCX54 BA BCX55-16 BM
BCX54-10 BC BCX56 BH
BCX54-16 BD BCX56-10 BK
BCX55 BE BCX56-16 BL
BCX55-10 BG
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
handbook, halfpage
123
Bottom view
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
2
3
1
2001 Oct 10 2
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BCX54 − 45 V
BCX55 − 60 V
BCX56 − 100 V
collector-emitter voltage open base
BCX54 − 45 V
BCX55 − 60 V
BCX56 − 80 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 1.5 A
peak base current − 0.2 A
total power dissipation T
≤ 25 °C; note 1 − 1.3 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part ofassociated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-s
thermal resistance from junction to ambient note 1 94 K/W
thermal resistance from junction to soldering point 14 K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part ofassociated Handbook”.
2
.
2001 Oct 10 3
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
f
T
h
FE1
----------h
FE2
collector cut-off current IE= 0; VCB=30V −−100 nA
I
= 0; VCB= 30 V; Tj= 125 °C −−10 µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain VCE= 2 V; (see Fig.2)
I
= 5 mA 63 −−
C
= 150 mA 63 − 250
I
C
I
= 500 mA 40 −−
C
DC current gain I
= 150 mA; VCE= 2 V; (see Fig.2)
C
BCX54-10; 55-10; 56-10 63 − 160
BCX54-16; 55-16; 56-16 100 − 250
collector-emitter saturation
IC= 500 mA; IB=50mA −−0.5 V
voltage
base-emitter voltage IC= 500 mA; VCE=2V −−1V
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz − 130 − MHz
DC current gain ratio of the
I
= 150 mA; VCE =2V − 1.3 1.6
C
complementary pairs
160
handbook, full pagewidth
h
FE
120
80
40
0
−1
10
VCE = 2 V
1
10 10
Fig.2 DC current gain; typical values.
MBH729
2
10
IC (mA)
3
2001 Oct 10 4
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
w M
D
b
3
B
A
E
L
123
b
2
b
1
e
1
e
H
E
c
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
1.6
mm
1.4
OUTLINE
VERSION
SOT89 TO-243 SC-62
b
0.48
0.35
b
2
1
0.53
0.40
IEC JEDEC EIAJ
b
1.8
1.4
c
D
3
0.44
0.37
E
4.6
2.6
4.4
2.4
REFERENCES
e
3.0
2001 Oct 10 5
e
1.5
L
H
E
1
min.
4.25
3.75
0.8
w
0.13
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomers using or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any of these products, conveys nolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 10 6
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
NOTES
2001 Oct 10 7
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08744
SCA73
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