NXP BCX 55 SMD Datasheet

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BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Rev. 8 — 24 October 2011 Product data sheet

1. Product profile

1.1 General description

NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

Table 1. Product overview

Type number

BCP55 SOT223 SC-73 - BCP52 BCX55 SOT89 SC-62 TO-243 BCX52 BC55PA SOT1061 - - BC52PA

[1] Valid for all available selection groups.

[1]

Package PNP complement NXP JEITA JEDEC

1.2 Features and benefits

 High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

1.3 Applications

 Linear voltage regulators  Power management  Low-side switches  MOSFET drivers  Battery-driven devices  Amplifiers

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

[1] Pulse test: tp 300 s;  = 0.02.

collector-emitter voltage open base - - 60 V collector current - - 1 A peak collector current single pulse; tp 1ms--2A DC current gain VCE=2V; IC=150mA

selection -10 VCE=2V; IC=150mA

selection -16 VCE=2V; IC=150mA

[1]

63 - 250

[1]

63 - 160

[1]

100 - 250

NXP Semiconductors

132

sym016

2, 4

321

sym042

Transparent top view

sym021

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

SOT223

1base 2 collector 3emitter 4 collector

SOT89

1emitter 2 collector 3base

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

SOT1061

1base 2emitter 3 collector

3. Ordering information

Table 4. Ordering information

Type number

BCP55 SC-73 plastic surface-mounted package with increased

BCX55 SC-62 plastic surface-mounted package; exposed die pad for

BC55PA HUSON3 plastic thermal enhanced ultra thin small outline

[1] Valid for all available selection groups.

[1]

Package Name Description Version

heatsink; 4 leads

good heat transfer; 3 leads

package; no leads; 3 terminals; body 2  2  0.65 mm

SOT223

SOT89

SOT1061

Product data sheet Rev. 8 — 24 October 2011 2 of 22

NXP Semiconductors

4. Marking

Table 5. Marking codes

Type number Marking code

BCP55 BCP55 BCP55-10 BCP55/10 BCP55-16 BCP55/16 BCX55 BE BCX55-10 BG BCX55-16 BM BC55PA AW BC55-10PA BH BC55-16PA BJ

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Product data sheet Rev. 8 — 24 October 2011 3 of 22

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

amb

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

collector-base voltage open emitter - 60 V collector-emitter voltage open base - 60 V emitter-base voltage open collector - 5 V collector current - 1 A peak collector current single pulse;

 1ms

base current - 0.3 A peak base current single pulse;

tp 1ms

total power dissipation T

amb

 25 C

BCP55

BCX55

BC55PA

junction temperature - 150 C ambient temperature 55 +150 C storage temperature 65 +150 C

-2A

-0.3A

[1]

-0.65W

[2]

-1.00W

[3]

-1.35W

[1]

-0.50W

[2]

-0.95W

[3]

-1.35W

[1]

-0.42W

[2]

-0.83W

[3]

-1.10W

[4]

-0.81W

[5]

-1.65W

Product data sheet Rev. 8 — 24 October 2011 4 of 22

NXP Semiconductors

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

1.5

tot

(W)

1.0

0.5

0.0 –75 17512525 75–25

(1)

(2)

(3)

(1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint

006aac674

(°C)

amb

1.5

(1)

tot

(W)

1.0

0.5

0.0 –75 17512525 75–25

2 2

(1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, mounting pad for collector 1 cm

(2)

(3)

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89

006aac676

P (W)

2.0

tot

1.5

(1)

006aac675

(°C)

amb

2 2

(2)

1.0

0.5

0.0 –75 17512525 75–25

(3) (4)

(5)

(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint

Fig 3. Power derating curves SOT1061

(°C)

amb

2 2

Product data sheet Rev. 8 — 24 October 2011 5 of 22

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-sp)

thermal resistance from junction to ambient

BCP55

BCX55

BC55PA

thermal resistance from junction to solder point

BCP55 - - 16 K/W BCX55 - - 16 K/W BC55PA --20K/W

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

in free air

[1]

--192K/W

[2]

--125K/W

[3]

--93K/W

[1]

--250K/W

[2]

--132K/W

[3]

--93K/W

[1]

--298K/W

[2]

--151K/W

[3]

--114K/W

[4]

--154K/W

[5]

--76K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm

Product data sheet Rev. 8 — 24 October 2011 6 of 22

NXP Semiconductors

006aac678

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

006aac677

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

–1

–5

–4

–3

–2

–1

1010

tp (s)

FR4 PCB, standard footprint

Fig 4. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;

typical values

FR4 PCB, mounting pad for collector 1 cm

Fig 5. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;

typical values

Product data sheet Rev. 8 — 24 October 2011 7 of 22

NXP Semiconductors

006aac680

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

006aac679

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

–1

–5

FR4 PCB, mounting pad for collector 6 cm

0.02

0.01

–4

–3

–2

–1

1010

tp (s)

Fig 6. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;

typical values

FR4 PCB, standard footprint

Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

Product data sheet Rev. 8 — 24 October 2011 8 of 22

NXP Semiconductors

006aac682

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

006aac681

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

–1

–5

–4

–3

FR4 PCB, mounting pad for collector 1 cm

–2

–1

1010

tp (s)

Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

FR4 PCB, mounting pad for collector 6 cm

Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

Product data sheet Rev. 8 — 24 October 2011 9 of 22

NXP Semiconductors

006aac684

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

006aac683

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.25

0.33

0.2

0.1

0.05

0.02

0.01

–1

–5

–4

–3

–2

–1

1010

tp (s)

FR4 PCB, single-sided copper, standard footprint

Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

FR4 PCB, single-sided copper, mounting pad for collector 1 cm

Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

Product data sheet Rev. 8 — 24 October 2011 10 of 22

NXP Semiconductors

006aac686

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

th(j-a)

(K/W)

duty cycle = 1

0.25

–1

–5

0.5

0.1

0.75

0.33

0.2

0.05

0.02

0.01

–4

–3

–2

FR4 PCB, single-sided copper, mounting pad for collector 6 cm

–1

1010

006aac685

tp (s)

Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

FR4 PCB, 4-layer copper, standard footprint

Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

Product data sheet Rev. 8 — 24 October 2011 11 of 22

NXP Semiconductors

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.1

0.33

0.2

0.05

0.02

0.01

–4

–3

0.25

–1

–5

FR4 PCB, 4-layer copper, mounting pad for collector 1 cm

–2

–1

1010

006aac687

tp (s)

Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

7. Characteristics

Table 8. Characteristics

=25C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

EBO

V C

CEsat

BE c

collector-base cut-off current

emitter-base cut-off current

DC current gain VCE=2V

DC current gain V

selection -10 IC=150mA

selection -16 IC=150mA

collector-emitter saturation voltage

base-emitter voltage VCE=2V; IC= 500 mA collector capacitance VCB=10V; IE=ie=0A;

transition frequency VCE=5V; IC=50mA;

VCB=30V; IE= 0 A - - 100 nA

=30V; IE=0A;

= 150 C

--10A

VEB=5V; IC= 0 A - - 100 nA

=5mA

=150mA

=500mA

=2V

IC=500mA; IB=50mA

[1]

63 - -

[1]

63 - 250

[1]

40 - -

[1]

63 - 160

[1]

100 - 250

[1]

--0.5V

[1]

--1V

-6-pF

f=1MHz

100 180 - MHz

f=100MHz

[1] Pulse test: tp 300 s;  = 0.02.

Product data sheet Rev. 8 — 24 October 2011 12 of 22

NXP Semiconductors

VCE (V)

0 2.01.60.8 1.20.4

006aaa084

0.8

0.4

1.2

1.6

(A)

25 20

15 10

IB (mA) = 50 45 40 35 30

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

300

200

100

–4

–3

(1)

(2)

(3)

–2

–1

006aac691

(A)

10110

VCE=2V

amb amb amb

= 100 C =25C = 55 C

(1) T (2) T (3) T

Fig 15. DC current gain as a function of collector

current; typical values

=25C

amb

Fig 16. Collector current as a function of

collector-emitter voltage; typical values

1.2

(V)

(1)

0.8

(2)

(3)

0.4

0.0

–1

110

006aac692

(mA)

VCE= 2 V (1) T (2) T (3) T

Fig 17. Base-emitter voltage as a function of collector

= 55 C

amb

=25C

amb amb

= 100 C

current; typical values

Fig 18. Collector-emitter sa turation voltage as a

CEsat

(V)

–1

(1) (2)

–2

(1) T (2) T (3) T

–1

C/IB

110

=10

= 100 C

amb

=25C

amb

= 55 C

amb

(3)

function of collector current; typical values

006aac693

IC (mA)

Product data sheet Rev. 8 — 24 October 2011 13 of 22

NXP Semiconductors

04-11-10Dimensions in mm

6.7

6.3

3.1

2.9

1.8

1.5

7.3

6.7

3.7

3.3

1.1

0.7

132

4.6

2.3

0.8

0.6

0.32

0.22 06-08-29Dimensions in mm

4.6

4.4

1.8

1.4

1.6

1.4

1.2

0.8

1.5

0.48

0.35

0.44

0.23

0.53

0.40

2.6

2.4

4.25

3.75

123

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9. Package outline

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Fig 19. Package outline SOT223 (SC-73)

Fig 20. Package outline SOT89 (SC-62/TO-243)

Product data sheet Rev. 8 — 24 October 2011 14 of 22

NXP Semiconductors

09-11-12Dimensions in mm

0.65 max

2.1

1.9

1.6

1.4

0.35

0.25

0.45

0.35

2.1

1.9

1.1

0.9

0.3

0.2

1.05

0.95

1.3

Fig 21. Package outline SOT1061 (HUSON3)

10. Packing information

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number

Package Description Packing quantity

[2]

[1]

1000 3000 4000

BCP55 SOT223 8 mm pitch, 12 mm tape and reel -115 - -135

[3]

BCX55 SOT89 8 mm pitch, 12 mm tape and reel; T1

8 mm pitch, 12 mm tape and reel; T3

-1 15 - -135

[4]

-146 - -

BC55PA SOT1061 4 mm pitch, 8 mm tape and reel - -11 5 -

[1] For further information and the availability of packing methods, see Section 14. [2] Valid for all available selection groups. [3] T1: normal taping [4] T3: 90 rotated taping

Product data sheet Rev. 8 — 24 October 2011 15 of 22

NXP Semiconductors

sot223_fr

1.2

(4×)

1.2

(3×)

1.3

(4×)

1.3

(3×)

6.15

3.85

3.6

3.5

0.3

3.9 7.65

2.3 2.3

6.1

231

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

sot223_fw

1.9

6.7

8.9

8.7

1.9

(3×)

1.9

(2×)

1.1

6.2

2.7 2.7

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

11. Soldering

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Fig 22. Reflow soldering footprint SOT223 (SC-73)

Product data sheet Rev. 8 — 24 October 2011 16 of 22

Fig 23. Wave soldering footprint SOT223 (SC-73)

NXP Semiconductors

solder lands

solder resist

occupied area

solder paste

sot089_fr

1.2

1.9

2.25

4.75

(3×)

0.7

(3×)

0.6

(3×)

1.1

(2×)

1.2

0.85

0.2

0.5

1.7

4.85

3.95

4.6

1.51.5

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot089_fw

0.7

5.3

6.6

2.4

3.5

0.5

1.8

(2×)

1.5

(2×)

7.6

1.9 1.9

Dimensions in mm

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Fig 24. Reflow soldering footprint SOT89 (SC-62/TO-243)

Fig 25. Wave soldering footprint SOT89 (SC-62/TO-243)

Product data sheet Rev. 8 — 24 October 2011 17 of 22

NXP Semiconductors

occupied area

solder paste = solder lands

Dimensions in mm

sot1061_fr

solder resist

0.4

2.1

1.3

0.25

1.1 1.2

0.55

0.6

2.3

0.5 (2×)

0.5 (2×) 0.6 (2×)

0.4 (2×)

0.5

1.6

1.7

1.05

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Reflow soldering is the only recommended soldering method.

Fig 26. Reflow soldering footprint SOT1061 (HUSON3)

Product data sheet Rev. 8 — 24 October 2011 18 of 22

NXP Semiconductors

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCP55_BCX55_BC55PAv.8 20111024 Product data sheet - BC637_BCP55_BCX55 v.7 Modifications:

BC637_BCP55_BCX55 v.7 20070625 Product data sheet - BC637_BCP55_BCX55 v .6 BC637_BCP55_BCX55 v.6 20050218 Product data sheet CPCN200405029BC635_637_639 v.4

BC635_637_639 v.4 20011010 Product specification - BC635_637_639 v.3 BCP54_55_56 v.5 20030206 Product specification - BCP54_55_56 v.4 BCX54_55_56 v.4 20011010 Product specification - BCX54_55_56 v.3

• Type number removed: BC637

• Type number added: BC55PA, BC55-10PA and BC55-16PA

• Section 1 “Product profile”: updated

• Section 2 “Pinning information”: updated

• Table 6 and 7: updated according to latest measurements

• Figure 1, 2, 4, 5, 7 to 9, 15, 17 and 18: updated

• Figure 3, 6, 10 to 14: added

• Section 8 “Test information”: added

• Section 10 “Packing information”: updated

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

BCP54_55_56 v.5 BCX54_55_56 v.4

Product data sheet Rev. 8 — 24 October 2011 19 of 22

NXP Semiconductors

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or cust omer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

, unless otherwise

Product data sheet Rev. 8 — 24 October 2011 20 of 22

NXP Semiconductors

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 8 — 24 October 2011 21 of 22

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 6

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 12

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 14

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 14

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14

10 Packing information . . . . . . . . . . . . . . . . . . . . 15

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

14 Contact information. . . . . . . . . . . . . . . . . . . . . 21

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

BCP55; BCX55; BC55PA

60 V, 1 A NPN medium power transistors

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Document identifier: BCP55_BCX55_BC55PA

Date of release: 24 October 2011

NXP BCX 55 SMD Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Test information

8.1 Quality information

9. Package outline

10. Packing information

11. Soldering

12. Revision history

13. Legal information

13.1 Data sheet status

13.2 Definitions

13.3 Disclaimers

13.4 Trademarks

14. Contact information

15. Contents