Page 1
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
Rev. 07 — 4 June 2007 Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1. Product overview
Type number
BC635
BCP54 SOT223 SC-73 - BCP51
BCX54 SOT89 SC-62 TO-243 BCX51
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
[1]
[2]
Package PNP complement
NXP JEITA JEDEC
SOT54 SC-43A TO-92 BC636
1.2 Features
n High current
n Two current gain selections
n High power dissipation capability
1.3 Applications
n Linear voltage regulators
n Low side switches
n MOSFET drivers
n Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
I
h
CEO
C
CM
FE
collector-emitter voltage open base - - 45 V
collector current - - 1 A
peak collector current single pulse; tp≤ 1 ms - - 1.5 A
DC current gain VCE=2V; IC= 150 mA 63 - 250
selection -10 VCE=2V; IC= 150 mA 63 - 160
h
FE
selection -16 VCE=2V; IC= 150 mA 100 - 250
h
FE
Page 2
NXP Semiconductors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 base
2 collector
3 emitter
SOT54A
1 base
2 collector
3 emitter
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
2
001aab347
001aab348
1
2
3
1
2
3
1
3
sym056
2
1
3
sym056
SOT54 variant
1 base
2 collector
3 emitter
SOT223
1 base
2 collector
3 emitter
4 collector
SOT89
1 emitter
2 collector
3 base
001aab447
4
132
321
2
1
2
3
1
3
sym056
2, 4
1
3
sym016
2
3
1
sym042
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 2 of 15
Page 3
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number
[2]
BC635
BCP54 SC-73 plastic surface-mounted package with increased
BCX54 SC-62 plastic surface-mounted package; collectorpad for good
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5. Marking codes
Type number Marking code
BC635 C635
BC635-16 C63516
BCP54 BCP54
BCP54-10 BCP54/10
BCP54-16 BCP54/16
BCX54 BA
BCX54-10 BC
BCX54-16 BD
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
[1]
Package
Name Description Version
SC-43A plastic single-ended leaded (through hole) package;
3 leads
heatsink; 4 leads
heat transfer; 3 leads
SOT54
SOT223
SOT89
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 3 of 15
Page 4
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
collector-base voltage open emitter - 45 V
collector-emitter voltage open base - 45 V
emitter-base voltage open collector - 5 V
collector current - 1 A
peak collector current single pulse;
t
≤ 1ms
p
peak base current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C
BC635
BCP54
BCX54
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
- 1.5 A
- 0.2 A
[1]
- 0.83 W
[1]
- 0.64 W
[2]
- 0.96 W
[1]
- 0.5 W
[2]
- 0.85 W
[3]
- 1.25 W
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 4 of 15
Page 5
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
006aaa085
T
(°C)
amb
P
(W)
1.6
tot
1.2
0.8
0.4
0
−75 17512525075−25
(1)
(2)
P
(W)
1.6
tot
1.2
0.8
0.4
0
−75 17512525075−25
FR4 PCB, standard footprint (1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Fig 1. Power derating curve SOT54 Fig 2. Power derating curves SOT223
006aaa087
P
(W)
1.6
tot
(1)
1.2
006aaa086
T
(°C)
amb
2
0.8
0.4
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig 3. Power derating curves SOT89
0
−75 17512525075−25
2
2
(2)
(3)
T
(°C)
amb
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 5 of 15
Page 6
NXP Semiconductors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
BC635
BCP54
BCX54
thermal resistance from
junction to solder point
BC635 - - 40 K/W
BCP54 - - 17 K/W
BCX54 - - 30 K/W
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
in free air
[1]
- - 150 K/W
[1]
- - 195 K/W
[2]
- - 130 K/W
[1]
- - 250 K/W
[2]
- - 145 K/W
[3]
- - 100 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aaa088
2
10
tp (s)
Z
th(j-a)
(K/W)
3
10
2
10
10
1
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
−3
10
−2
−1
10
1
1010
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
typical values
3
10
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 6 of 15
Page 7
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
006aaa814
2
10
tp (s)
10
Z
th(j-a)
(K/W)
10
3
10
2
10
10
1
−1
10
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
−3
10
−2
−1
10
1
1010
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aaa089
2
10
tp (s)
10
Z
th(j-a)
(K/W)
3
10
2
10
10
1
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
−3
10
−2
−1
10
1
1010
3
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 7 of 15
Page 8
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
006aaa815
2
10
tp (s)
Z
th(j-a)
(K/W)
3
10
2
10
10
1
10
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
−3
10
−2
−1
10
1
1010
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa090
Z
th(j-a)
(K/W)
3
10
2
10
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
3
10
0
1
−5
10
−4
10
−3
10
FR4 PCB, mounting pad for collector 1 cm
−2
2
−1
10
1
1010
2
10
tp (s)
3
10
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 8 of 15
Page 9
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
3
10
th(j-a)
10
10
2
10
1
−1
10
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
10
Z
(K/W)
FR4 PCB, mounting pad for collector 6 cm
−3
−2
2
−1
10
1
1010
006aaa816
2
10
tp (s)
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
V
V
C
f
T
FE
CEsat
BE
c
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE=2V
DC current gain V
selection -10 IC= 150 mA 63 - 160
h
FE
selection -16 IC= 150 mA 100 - 250
h
FE
collector-emitter
saturation voltage
base-emitter voltage VCE=2V; IC= 500 mA
collector capacitance VCB=10V;IE=ie=0A;
transition frequency VCE=5V; IC=50mA;
VCB=30V; IE= 0 A - - 100 nA
=30V; IE=0A;
V
CB
T
= 150 °C
j
--10µA
VEB=5V; IC= 0 A - - 100 nA
= 5 mA 63 - -
I
C
= 150 mA 63 - 250
I
C
= 500 mA
I
C
=2V
CE
IC= 500 mA; IB=50mA
[1]
40 - -
[1]
- - 500 mV
[1]
--1V
-6-pF
f=1MHz
100 180 - MHz
f = 100 MHz
3
10
[1] Pulse test: tp≤ 300 µs;δ = 0.02.
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 9 of 15
Page 10
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
300
h
FE
(1)
200
(2)
100
0
−1
10
(3)
110
10
2
006aaa080
3
10
I
C
(mA)
4
10
VCE=2V
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
I
(A)
1.6
C
1.2
0.8
0.4
IB (mA) = 50 45 40 35 30
0
0 2.01.60.8 1.20.4
T
=25°C
amb
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
006aaa084
25
20
15
10
5
VCE (V)
1.2
V
BE
(V)
0.8
0.4
0
−1
10
(1)
(2)
(3)
110
10
2
006aaa081
3
10
I
C
(mA)
4
10
VCE=2V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
006aaa082
3
10
IC (mA)
10
V
CEsat
(V)
10
10
1
−1
(1)
(2)
(3)
−2
−1
10
110
10
2
IC/IB=10
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
4
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 10 of 15
Page 11
NXP Semiconductors
8. Package outline
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
4.2
3.6
4.8
4.4
5.2
5.0
14.5
12.7
0.45
0.38
0.48
0.40
1
2
3
1.27
2.54
04-11-16Dimensions in mm
4.2
3.6
4.8
4.4
5.2
5.0
3 max
14.5
12.7
Fig 14. Package outline SOT54 (SC-43A/TO-92) Fig 15. Package outline SOT54A
4.2
3.6
4.8
4.4
5.2
5.0
2.5
max
14.5
12.7
0.45
0.38
1.27
0.48
0.40
1
2
3
1.27
2.54
05-01-10Dimensions in mm
7.3
6.7
3.7
3.3
6.7
6.3
3.1
2.9
132
2.3
4.6
4
0.8
0.6
1.1
0.7
0.45
0.38
0.48
0.40
1
2
3
1.8
1.5
2.54
0.32
0.22
5.08
04-06-28Dimensions in mm
04-11-10Dimensions in mm
Fig 16. Package outline SOT54 variant Fig 17. Package outline SOT223 (SC-73)
4.6
2.6
2.4
4.4
1.8
1.4
123
0.53
0.40
1.5
3
0.48
0.35
1.2
0.8
1.6
1.4
4.25
3.75
0.44
0.23
06-08-29Dimensions in mm
Fig 18. Package outline SOT89 (SC-62/TO-243)
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 11 of 15
Page 12
NXP Semiconductors
9. Packing information
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number
BC635 SOT54 bulk, straight leads - - -412 -
BCP54 SOT223 8 mm pitch, 12 mm tape and reel -115 -135 - BCX54 SOT89 8 mm pitch, 12 mm tape and reel; T1
[1] For further information and the availability of packing methods, seeSection 12.
[2] Valid for all available selection groups.
[3] T1: normal taping
[4] T3: 90° rotated taping
[2]
Package Description Packing quantity
SOT54A tape and reel, wide pitch - - - -116
tape ammopack, wide pitch - - - -126
SOT54 variant bulk, delta pinning - - -112 -
8 mm pitch, 12 mm tape and reel; T3
[1]
1000 4000 5000 10000
[3]
-115 -135 - -
[4]
-120 - - -
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 12 of 15
Page 13
NXP Semiconductors
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC635_BCP54_BCX54_7 20070604 Product data sheet - BC635_BCP54_BCX54_6
Modifications:
BC635_BCP54_BCX54_6 20050225 Product data sheet CPCN200405029 BC635_637_639_4
BC635_637_639_4 20011010 Product specification - BC635_637_639_3
BCP54_55_56_5 20030206 Product specification - BCP54_55_56_4
BCX54_55_56_4 20011010 Product specification - BCX54_55_56_3
• Table 1 “Product overview”: amended
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Table 2 “Quick reference data”: I
• Table 2 “Quick reference data”: I
parameter redefined to collector current
C
condition added
CM
• Figure 2 and 3: amended
• Table 6 “Limiting values”: I
• Table 6 “Limiting values”: I
• Table 6 “Limiting values”: P
• Table 7 “Thermal characteristics”: R
• Figure 4: Z
• Figure 4: t
redefined to Z
th
parameter redefined to pulse duration
p
parameter redefined to collector current
C
condition added
CM
values for BCP54 and BCX54 adapted
tot
values for BCP54 and BCX54 rounded
th(j-a)
transient thermal impedance from junction to ambient
th(j-a)
• Figure 5: added
• Figure 6: Z
• Figure 6: t
redefined to Z
th
parameter redefined to pulse duration
p
transient thermal impedance from junction to ambient
th(j-a)
• Figure 7: added
• Figure 8: Z
• Figure 8: t
redefined to Z
th
parameter redefined to pulse duration
p
transient thermal impedance from junction to ambient
th(j-a)
• Figure 9: added
• Figure 11: amended
• Table 9 “Packing methods”: new packing method for BCX54 added
• Section 11 “Legal information”: updated
BCP54_55_56_5
BCX54_55_56_4
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 13 of 15
Page 14
NXP Semiconductors
11. Legal information
11.1 Data sheet status
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this documentmay havechanged since thisdocument was publishedand maydiffer in caseof multiple devices.The latest product status
information is available on the Internet at URL
[1][2]
Product status
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability for theconsequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s) andtitle. A short data sheet isintended
for quickreference only and should not be relied upon to containdetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes andreplaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction ofa NXP Semiconductors productcan reasonably be expectedto
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum RatingsSystem of IEC 60134) may cause permanent
damage to thedevice. Limiting values arestress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under anycopyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: Allreferenced brands, productnames, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BC635_BCP54_BCX54_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 4 June 2007 14 of 15
Page 15
NXP Semiconductors
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
BC635; BCP54; BCX54
45 V, 1 A NPN medium power transistors
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BC635_BCP54_BCX54_7
Date of release: 4 June 2007
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