Page 1
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008 Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1. Product overview
Type number
BC640
BCP53 SOT223 SC-73 - BCP56
BCX53 SOT89 SC-62 TO-243 BCX56
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
[1]
[2]
Package NPN complement
NXP JEITA JEDEC
SOT54 SC-43A TO-92 BC639
1.2 Features
n High current
n Two current gain selections
n High power dissipation capability
1.3 Applications
n Linear voltage regulators
n High-side switches
n MOSFET drivers
n Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
I
h
CEO
C
CM
FE
collector-emitter voltage open base - - −80 V
collector current - - −1A
peak collector current single pulse; tp≤ 1ms - - −1.5 A
DC current gain VCE= −2V;
I
= −150 mA
C
selection -10 VCE= −2V;
h
FE
selection -16 VCE= −2V;
h
FE
I
= −150 mA
C
I
= −150 mA
C
63 - 250
63 - 160
100 - 250
Page 2
NXP Semiconductors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 base
2 collector
3 emitter
SOT54A
1 base
2 collector
3 emitter
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
2
001aab347
001aab348
1
2
3
1
2
3
1
3
sym029
2
1
3
sym029
SOT54 variant
1 base
2 collector
3 emitter
SOT223
1 base
2 collector
3 emitter
4 collector
SOT89
1 emitter
2 collector
3 base
001aab447
4
132
321
2
1
2
3
1
3
sym029
2, 4
1
3
sym028
2
3
1
006aaa231
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 2 of 15
Page 3
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number
[2]
BC640
BCP53 SC-73 plastic surface-mounted package with increased
BCX53 SC-62 plastic surface-mounted package; collectorpad for good
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5. Marking codes
Type number Marking code
BC640 C640
BCP53 BCP53
BCP53-10 BCP53/10
BCP53-16 BCP53/16
BCX53 AH
BCX53-10 AK
BCX53-16 AL
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
[1]
Package
Name Description Version
SC-43A plastic single-ended leaded (through hole) package;
3 leads
heatsink; 4 leads
heat transfer; 3 leads
SOT54
SOT223
SOT89
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 3 of 15
Page 4
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
collector-base voltage open emitter - −100 V
collector-emitter voltage open base - −80 V
emitter-base voltage open collector - −5V
collector current - −1A
peak collector current single pulse;
t
≤ 1ms
p
peak base current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C
BC640
BCP53
BCX53
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
- −1.5 A
- −0.2 A
[1]
- 0.83 W
[1]
- 0.65 W
[2]
-1W
[1]
- 0.5 W
[2]
- 0.9 W
[3]
- 1.3 W
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 4 of 15
Page 5
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
1.6
P
tot
(W)
1.2
0.8
0.4
0
−75 17512525075−25
006aaa219
T
(°C)
amb
1.6
P
tot
(W)
1.2
0.8
0.4
0
−75 17512525 75−25
(1)
(2)
0
FR4 PCB, standard footprint (1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Fig 1. Power derating curve SOT54 Fig 2. Power derating curves SOT223
006aaa221
P
(W)
1.6
tot
1.2
(1)
006aaa220
T
(°C)
amb
2
0.8
0.4
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig 3. Power derating curves SOT89
0
−75 17512525075−25
2
2
(2)
(3)
T
(°C)
amb
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 5 of 15
Page 6
NXP Semiconductors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
BC640
BCP53
BCX53
thermal resistance from
junction to solder point
BC640 - - 40 K/W
BCP53 - - 17 K/W
BCX53 - - 20 K/W
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
in free air
[1]
- - 150 K/W
[1]
- - 190 K/W
[2]
- - 125 K/W
[1]
- - 230 K/W
[2]
- - 135 K/W
[3]
--95K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
10
Z
th(j-a)
(K/W)
10
10
3
2
10
1
−1
−5
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−4
10
−3
10
−2
−1
10
1
1010
006aaa222
2
10
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
typical values
3
10
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 6 of 15
Page 7
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
10
Z
th(j-a)
(K/W)
10
10
3
duty cycle =
2
10
1
−1
−5
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
−4
10
−3
10
−2
−1
10
1
1010
006aaa223
2
10
tp (s)
10
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aaa817
Z
th(j-a)
(K/W)
3
10
2
10
10
1
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
3
−1
10
−5
10
−4
10
−3
10
FR4 PCB, mounting pad for collector 1 cm
−2
2
−1
10
1
1010
2
10
tp (s)
3
10
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 7 of 15
Page 8
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
10
Z
th(j-a)
(K/W)
10
10
3
2
10
1
−1
−5
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−4
10
−3
10
−2
−1
10
1
1010
006aaa224
2
10
tp (s)
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
10
Z
th(j-a)
(K/W)
10
3
2
10
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa225
3
10
−1
10
−5
10
−4
10
−3
10
FR4 PCB, mounting pad for collector 1 cm
−2
2
−1
10
1
1010
2
10
tp (s)
3
10
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 8 of 15
Page 9
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
3
10
th(j-a)
10
10
2
10
1
−1
10
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
10
Z
(K/W)
FR4 PCB, mounting pad for collector 6 cm
−3
−2
2
−1
10
1
1010
006aaa818
2
10
tp (s)
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
V
V
C
f
T
FE
CEsat
BE
c
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE= −2V
DC current gain V
selection -10 IC= −150 mA 63 - 160
h
FE
selection -16 IC= −150 mA 100 - 250
h
FE
collector-emitter
saturation voltage
base-emitter voltage VCE= −2 V; IC= −500 mA
collector capacitance VCB= −15 V;IE=ie=0A;
transition frequency VCE= −5 V; IC= −50 mA;
VCB= −30 V; IE=0A - - −100 nA
= −30 V; IE=0A;
V
CB
T
= 150 °C
j
--−10 µA
VEB= −5 V; IC=0A - - −100 nA
= −5mA 63 - -
I
C
= −150 mA 63 - 250
I
C
= −500 mA
I
C
= −2V
CE
IC= −500 mA;
I
= −50 mA
B
[1]
40 - -
[1]
--−0.5 V
[1]
--−1V
-15-pF
f=1MHz
- 145 - MHz
f = 100 MHz
3
10
[1] Pulse test: tp≤ 300 µs;δ = 0.02.
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 9 of 15
Page 10
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
300
−10
(1)
(2)
(3)
2
h
FE
200
100
0
−1
−10
−1 −10
006aaa226
3
−10
I
(mA)
C
−10
VCE= −2V
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
−1.6
I
(mA) = −45 −40.5 −36
I
C
(A)
−1.2
−0.8
−0.4
4
0
0 −2.0−1.6−0.8 −1.2−0.4
T
=25°C
amb
B
006aaa230
−31.5
−27
−22.5
−18
−13.5
−9
−4.5
VCE (V)
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
−1200
V
BE
(mV)
−1000
−800
−600
−400
−200
−10
−1
−1 −10
−10
(1)
(2)
(3)
2
006aaa227
3
−10
IC (mA)
−10
4
VCE= −2V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
006aaa228
3
−10
IC (mA)
−10
V
(mV)
−10
CEsat
−10
−10
3
2
−10
−1
−1 −10
(1)
(2)
(3)
−10
2
IC/IB=10
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
4
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 10 of 15
Page 11
NXP Semiconductors
8. Package outline
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
4.2
3.6
4.8
4.4
5.2
5.0
14.5
12.7
0.45
0.38
0.48
0.40
1
2
3
1.27
2.54
04-11-16Dimensions in mm
4.2
3.6
4.8
4.4
5.2
5.0
3 max
14.5
12.7
Fig 14. Package outline SOT54 (SC-43A/TO-92) Fig 15. Package outline SOT54A
4.2
3.6
4.8
4.4
5.2
5.0
2.5
max
14.5
12.7
0.45
0.38
1.27
0.48
0.40
1
2
3
1.27
2.54
05-01-10Dimensions in mm
7.3
6.7
3.7
3.3
6.7
6.3
3.1
2.9
132
2.3
4.6
4
0.8
0.6
1.1
0.7
0.45
0.38
0.48
0.40
1
2
3
1.8
1.5
2.54
0.32
0.22
5.08
04-06-28Dimensions in mm
04-11-10Dimensions in mm
Fig 16. Package outline SOT54 variant Fig 17. Package outline SOT223 (SC-73)
4.6
2.6
2.4
4.4
1.8
1.4
123
0.53
0.40
1.5
3
0.48
0.35
1.2
0.8
1.6
1.4
4.25
3.75
0.44
0.23
06-08-29Dimensions in mm
Fig 18. Package outline SOT89 (SC-62/TO-243)
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 11 of 15
Page 12
NXP Semiconductors
9. Packing information
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number
BC640 SOT54 bulk, straight leads - - -412 -
BCP53 SOT223 8 mm pitch, 12 mm tape and reel -115 -135 - BCX53 SOT89 8 mm pitch, 12 mm tape and reel; T1
[1] For further information and the availability of packing methods, seeSection 12.
[2] Valid for all available selection groups.
[3] T1: normal taping
[4] T3: 90° rotated taping
[2]
Package Description Packing quantity
SOT54A tape and reel, wide pitch - - - -116
tape ammopack, wide pitch - - - -126
SOT54 variant bulk, delta pinning - - -112 -
8 mm pitch, 12 mm tape and reel; T3
[1]
1000 4000 5000 10000
[3]
-115 -135 - -
[4]
-120 - - -
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 12 of 15
Page 13
NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC640_BCP53_BCX53_8 20080222 Product data sheet - BC640_BCP53_BCX53_7
Modifications:
BC640_BCP53_BCX53_7 20070627 Product data sheet - BC640_BCP53_BCX53_6
BC640_BCP53_BCX53_6 20060313 Product data sheet - BC636_638_640_5
BC636_638_640_5 20041011 Product specification - BC636_638_640_4
BCP51_52_53_5 20030206 Product specification - BCP51_52_53_4
BCX51_52_53_4 20011010 Product specification - BCX51_52_53_3
• Type number BC640-16 has been removed
• Figure 11: amended
BCP51_52_53_5
BCX51_52_53_4
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 13 of 15
Page 14
NXP Semiconductors
11. Legal information
11.1 Data sheet status
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this documentmay havechanged since thisdocument was publishedand maydiffer in caseof multiple devices.The latest product status
information is available on the Internet at URL
[1][2]
Product status
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability for theconsequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s) andtitle. A short data sheet isintended
for quickreference only and should not be relied upon to containdetailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes andreplaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum RatingsSystem of IEC 60134) may cause permanent
damage to thedevice. Limiting values arestress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under anycopyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: Allreferenced brands, productnames, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BC640_BCP53_BCX53_8 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 08 — 22 February 2008 14 of 15
Page 15
NXP Semiconductors
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BC640_BCP53_BCX53_8
Date of release: 22 February 2008
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