NXP BCX 52-16 SMD Datasheet

PNP Silicon AF Transistors

BCX51...-BCX53...

• For AF driver and output stages

• High collector current

1

2

3

• Low collector-emitter saturation voltage

• Complementary types: BCX54...BCX56 (NPN)

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCX51

AA

1=B

2=C

3=E

SOT89

2

BCX51-16

BCX52

BCX52-16

BCX53

BCX53-10

BCX53-16

1

Pb-containing package may be available upon special request

AD

AE

AM

AH

AK

AL

1=B

1=B

1=B

1=B

1=B

1=B

2=C

2=C

2=C

2=C

2=C

2=C

3=E

3=E

3=E

3=E

3=E

3=E

SOT89

SOT89

SOT89

SOT89

SOT89

SOT89

1

2008-10-10

BCX51...-BCX53...

j

g

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

V

BCX51

BCX52

BCX53

Collector-base voltage

V

BCX51

BCX52

BCX53

Emitter-base voltage V

Collector current I

Peak collector current, tp ≤ 10 ms I

Base current I

Peak base current I

Total power dissipation

T

≤ 120 °C

S

P

Junction temperature T

CEO

CBO

EBO

C

CM

B

BM

tot

V

45

60

80

45

60

100

5

1 A

1.5

100 mA

200

2 W

150 °C

Storage temperature T

Thermal Resistance
Parameter

Junction - soldering point

1

For calculation of R

thJA

1)

please refer to Application Note Thermal Resistance

st

-65 ... 150

Symbol Value Unit

R

thJS

≤ 15

K/W

2

2008-10-10

BCX51...-BCX53...

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BCX51

C

I

= 10 mA, IB = 0 , BCX52

C

I

= 10 mA, IB = 0 , BCX53

C

Collector-base breakdown voltage

I

= 100 µA, IE = 0 , BCX51

C

I

= 100 µA, IE = 0 , BCX52

C

I

= 100 µA, IE = 0 , BCX53

C

Emitter-base breakdown voltage

I

= 10 µA, IC = 0

E

Collector-base cutoff current

V

= 30 V, IE = 0

CB

V

= 30 V, IE = 0 , TA = 150 °C

CB

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

45

60

80

45

60

100

-

-

-

-

-

-

5 - -

-

-

-

-

-

-

-

-

-

-

0.1

20

V

µA

DC current gain1)

I

= 5 mA, VCE = 2 V

C

I

= 150 mA, VCE = 2 V, BCX51...BCX53

C

I

= 150 mA, VCE = 2 V, BCX53-10

C

I

= 150 mA, VCE = 2 V, BCX51-16...BCX53-16

C

I

= 500 mA, VCE = 2 V

C

Collector-emitter saturation voltage1)

I

= 500 mA, IB = 50 mA

C

Base-emitter voltage1)

I

= 500 mA, VCE = 2 V

C

AC Characteristics

Transition frequency

= 50 mA, VCE = 10 V, f = 20 MHz

I

C

1

Pulse test: t < 300µs; D < 2%

h

FE

V

CEsat

V

BE(ON)

f

T

25

40

63

100

25

-

-

100

160

-

-

250

160

250

-

- - 0.5 V

- - 1

- 125 - MHz

-

3

2008-10-10