NXP BCW69, BCW70 Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
BCW69; BCW70
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 19
2004 Feb 06
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
complements: BCW71 and BCW72.
NPN
MARKING
T YPE NUMBER MARKING CODE
BCW69 H1*
BCW70 H2*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BCW69 − plastic surface mounted package; 3 leads SOT23
BCW70
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −50 V
collector-emitter voltage open base; IC = −2 mA − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2004 Feb 06 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW69; BCW70
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure IC = −200 μA; VCE = −5 V;
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = −20 V − − −100 nA
IE = 0; VCB = −20 V; Tj = 100 °C − − −10 μA
emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
DC current gain IC = −10 μA; VCE = −5 V
BCW69 − 90 −
BCW70 − 150 −
DC current gain IC = −2 mA; VCE = −5 V
BCW69 120 − 260
BCW70 215 − 500
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA − −80 −300 mV
IC = −50 mA; IB = −2.5 mA; note 1 − −150 − mV
base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −720 − mV
IC = −50 mA; IB = −2.5 mA; note 1 − −810 − mV
base-emitter voltage IC = −2 mA; VCE = −5 V −600 − −750 mV
collector capacitance IE = Ie = 0; VCB = −10 V;
f
= 1 MHz
transition frequency IC = −10 mA; VCE = −5 V;
= 100 MHz
f
− 4.5 − pF
100 − − MHz
− − 10 dB
R
= 2 kΩ; f = 1 kHz; B = 200 Hz
S
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Feb 06 3
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