NXP BCW 32 NXP Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

BCW31; BCW32; BCW33

NPN general purpose transistors

Product data sheet
Supersedes data of 2000 Jul 04

2004 Feb 06

NXP Semiconductors Product data sheet

NPN general purpose transistors

FEATURES

• Low current (100 mA)

• Low voltage (32 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistors in a plastic SOT23 package.

complements: BCW29 and BCW30.

PNP

MARKING

T YPE NUMBER MARKING CODE

BCW31 D1*
BCW32 D2*
BCW33 D3*

(1)

BCW31; BCW32;

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

21

BCW33

3

1

2

MAM255

Note

1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

* = W : Made in China.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

BCW31 − plastic surface mounted package; 3 leads SOT23
BCW32
BCW33

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg
j
amb

collector-base voltage open emitter − 32 V
collector-emitter voltage open base; IC = 2 mA − 32 V
emitter-base voltage open collector − 5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

2004 Feb 06 2