NXP BCP 69-25 SMD Datasheet

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Page 1

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Rev. 7 — 12 October 2011 Product data sheet

1. Product profile

1.1 General description

PNP medium power transistor series in Surface-M ounted De vice (SMD) plastic packages.

Table 1. Product overview

Type number

BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SOT1061 - - BC68PA

[1] Valid for all available selection groups.

[1]

Package NPN complement NXP JEITA JEDEC

1.2 Features and benefits

 High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

1.3 Applications

 Linear voltage regulators  Power management  High-side switches  MOSFET drivers  Battery-driven devices  Amplifiers

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V I I

CEO C CM

collector-emitter voltage open base - - 20 V collector current - - 2A peak collector current single pulse; tp 1ms - - 3A

Page 2

NXP Semiconductors

132

sym028

2, 4

321

006aaa231

Transparent top view

sym013

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

[1] Pulse test: tp 300 s;  = 0.02.

DC current gain VCE= 1V;

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

SOT223

1base 2 collector 3emitter 4 collector

…continued

= 500 mA

selection -16 VCE= 1V;

IC= 500 mA

selection -25 VCE= 1V;

IC= 500 mA

[1]

85 - 375

[1]

100 - 250

[1]

160 - 375

SOT89

1emitter 2 collector 3base

SOT1061

1base 2emitter 3 collector

Product data sheet Rev. 7 — 12 October 2011 2 of 24

Page 3

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number

BCP69 SC-73 plastic surface-mounted package with increased

BC869 SC-62 plastic surface-mounted package; exposed die pad for

BC69PA HUSON3 plastic thermal enhanced ultra thin small outline

[1] Valid for all available selection groups.

4. Marking

Table 5. Marking codes

Type number Marking code

BCP69 BCP69 BCP69-16 BCP69/16 BCP69-25 BCP69/25 BC869 CEC BC869-16 CGC BC869-25 CHC BC69PA B3 BC69-16PA BM BC69-25PA BN

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

[1]

Package Name Description Version

heatsink; 4 leads

good heat transfer; 3 leads

package; no leads; 3 terminals; body 2  2  0.65 mm

SOT223

SOT89

SOT1061

Product data sheet Rev. 7 — 12 October 2011 3 of 24

Page 4

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

amb

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

collector-base voltage open emitter - 32 V collector-emitter voltage open base - 20 V emitter-base voltage open collector - 5V collector current - 2A peak collector current single pulse;

 1ms

base current - 0.4 A peak base current single pulse;

tp 1ms

total power dissipation T

amb

 25 C

BCP69

BC869

BC69PA

junction temperature - 150 C ambient temperature 55 +150 C storage temperature 65 +150 C

- 3A

- 0.4 A

[1]

-0.65W

[2]

-1.00W

[3]

-1.35W

[1]

-0.50W

[2]

-0.95W

[3]

-1.35W

[1]

-0.42W

[2]

-0.83W

[3]

-1.10W

[4]

-0.81W

[5]

-1.65W

Product data sheet Rev. 7 — 12 October 2011 4 of 24

Page 5

NXP Semiconductors

amb

(°C)

–75 17512525 75–25

006aac676

1.0

0.5

1.5

2.0

tot

(W)

0.0

(1)

(2)

(3) (4)

(5)

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

1.5

tot

(W)

1.0

0.5

0.0 –75 17512525 75–25

(1)

(2)

(3)

(1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint

006aac674

(°C)

amb

1.5

(1)

tot

(W)

1.0

0.5

0.0 –75 17512525 75–25

2 2

(1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, mounting pad for collector 1 cm

(2)

(3)

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89

006aac675

(°C)

amb

2 2

(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm

2 2

(4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint

Fig 3. Power derating curves SOT1061

Product data sheet Rev. 7 — 12 October 2011 5 of 24

Page 6

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-sp)

thermal resistance from junction to ambient

BCP69

BC869

BC69PA

thermal resistance from junction to solder point

BCP69 - - 16 K/W BC869 - - 16 K/W BC69PA - - 20 K/W

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

in free air

[1]

--192K/W

[2]

--125K/W

[3]

--93K/W

[1]

--250K/W

[2]

--132K/W

[3]

--93K/W

[1]

--298K/W

[2]

--151K/W

[3]

--114K/W

[4]

--154K/W

[5]

--76K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm

Product data sheet Rev. 7 — 12 October 2011 6 of 24

Page 7

NXP Semiconductors

006aac677

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

FR4 PCB, standard footprint

Fig 4. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;

typical values

th(j-a)

(K/W)

–1

–5

duty cycle = 1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

–4

FR4 PCB, mounting pad for collector 1 cm

–3

–2

–1

1010

006aac678

tp (s)

Fig 5. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;

typical values

Product data sheet Rev. 7 — 12 October 2011 7 of 24

Page 8

NXP Semiconductors

006aac679

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aac680

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

FR4 PCB, mounting pad for collector 6 cm

Fig 6. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;

typical values

FR4 PCB, standard footprint

Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

Product data sheet Rev. 7 — 12 October 2011 8 of 24

Page 9

NXP Semiconductors

006aac681

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aac682

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

FR4 PCB, mounting pad for collector 1 cm

Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

FR4 PCB, mounting pad for collector 6 cm

Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

Product data sheet Rev. 7 — 12 October 2011 9 of 24

Page 10

NXP Semiconductors

006aac683

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

006aac684

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

FR4 PCB, single-sided copper, standard footprint

Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

FR4 PCB, single-sided copper, mounting pad for collector 1 cm

Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

Product data sheet Rev. 7 — 12 October 2011 10 of 24

Page 11

NXP Semiconductors

006aac685

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

006aac686

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

FR4 PCB, single-sided copper, mounting pad for collector 6 cm

Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

FR4 PCB, 4-layer copper, standard footprint

Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

Product data sheet Rev. 7 — 12 October 2011 11 of 24

Page 12

NXP Semiconductors

006aac687

th(j-a)

(K/W)

–1

–5

1010

–2

–4

–1

tp (s)

–3

duty cycle = 1

0.01

0.05

0.1

0.2

0.33

0.5

0.75

0.02

0.25

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

FR4 PCB, 4-layer copper, mounting pad for collector 1 cm

Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;

typical values

Product data sheet Rev. 7 — 12 October 2011 12 of 24

Page 13

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

EBO

CEsat

BCP69; BC869; BC69PA

=25C unless otherwise specified.

collector-base cut-off current

emitter-base cut-off current

DC current gain VCE= 10 V

DC current gain V

selection -16 IC= 500 mA

selection -25 IC= 500 mA

collector-emitter saturation voltage

base-emitter voltage VCE= 10 V; IC= 5mA

collector capacitance VCB= 10 V; IE=ie=0A;

transition frequency VCE= 5V; IC= 50 mA;

VCB= 25 V; IE=0A - - 100 nA

= 25 V; IE=0A;

= 150 C

VEB= 5V; IC=0A - - 100 nA

= 5mA 50 - -

= 1V

= 500 mA

= 1A

= 2A

= 1V

IC= 1A; IB= 100 mA

= 2A; IB= 200 mA

= 1V; IC= 1A

f=1MHz

f=100MHz

20 V, 2 A PNP medium power transistors

--10 A

[1]

85 - 375

[1]

60 - -

[1]

40 - -

[1]

100 - 250

[1]

160 - 375

[1]

--0.5 V

[1] [1]

--0.7 V

[1]

--1V

-28-pF

40 140 - MHz

0.6 V

[1] Pulse test: tp 300 s;  = 0.02.

Product data sheet Rev. 7 — 12 October 2011 13 of 24

Page 14

NXP Semiconductors

006aab403

(A)

(V)

−2.4

−1.6

−2.0

−0.8

−1.2

−0.4

−1 −5

−2 −3 −4

IB (mA) = −18.0

−16.2

−3.6

−5.4

−7.2

−9.0

−14.4

−12.6

−10.8

−1.8

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

300

200

100

-10

-4

(1)

(2)

(3)

-3

-10

-2

-10

-1

006aac697

(A)

-10-1-10

VCE= 1V (1) T (2) T (3) T

amb amb amb

= 100 C =25C = 55 C

Fig 15. hFEselection -16: DC current gain as a

function of collector current; typical values

=25C

amb

Fig 16. hFEselection -16: collector current as a

function of collector-emitter voltage; typical values

-1.2

(V)

-0.8

-0.4

0.0

-10

-1

(1)

(2)

(3)

-1 -10

-10

006aac698

-10 I

(mA)

-10

VCE= 1V (1) T (2) T (3) T

Fig 17. hFEselection -16: base-emitter voltage as a

Product data sheet Rev. 7 — 12 October 2011 14 of 24

= 55 C

amb

=25C

amb

= 100 C

amb

function of collector current; typical values

-1

CEsat

(V)

-1

-10

-2

-10

-3

-10

(1) T (2) T (3) T

C/IB

-1

-1 -10

=10

= 100 C

amb

=25C

amb

= 55 C

amb

-10

(1)

(2)

(3)

Fig 18. hFEselection -16: collector-emitter saturation

voltage as a function of col lector current; typical values

006aac699

-10 IC (mA)

-10

Page 15

NXP Semiconductors

006aab404

(A)

(V)

−2.4

−2.0

−1.6

−1.2

−0.8

−0.4

−1 −5

−2 −3 −4

IB (mA) = −12.0

−10.8

−2.4

−3.6

−4.8

−6.0

−1.2

−9.6

−8.4

−7.2

006aac708

-0.4

-0.8

-1.2

(V)

0.0 I

(mA)

-10

-1

-10

-1 -10

-10

(1)

(2)

(3)

006aac709

–10

–1

–10

–2

–1

CEsat

(V)

–10

–3

IC (mA)

–10

–1

–10

–1 –10

–10

(1)

(2)

(3)

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

400

300

200

100

-4

-10

(1)

(2)

(3)

-3

-10

-2

-10

-1

006aac707

(A)

-10-1-10

VCE= 1V

amb amb amb

= 100 C =25C = 55 C

(1) T (2) T (3) T

Fig 19. hFEselection -25: DC current gain as a

function of collector current; typical values

=25C

amb

Fig 20. hFEselection -25: collector current as a

function of collector-emitter voltage; typical values

VCE= 1V (1) T (2) T (3) T

Fig 21. hFEselection -25: base-emitter voltage as a

Product data sheet Rev. 7 — 12 October 2011 15 of 24

= 55 C

amb

=25C

amb

= 100 C

amb

function of collector current; typical values

(1) T (2) T (3) T

Fig 22. hFEselection -25: collector-emitter saturation

=10

C/IB

= 100 C

amb

=25C

amb

= 55 C

amb

voltage as a function of col lector current; typical values

Page 16

NXP Semiconductors

04-11-10Dimensions in mm

6.7

6.3

3.1

2.9

1.8

1.5

7.3

6.7

3.7

3.3

1.1

0.7

132

4.6

2.3

0.8

0.6

0.32

0.22 06-08-29Dimensions in mm

4.6

4.4

1.8

1.4

1.6

1.4

1.2

0.8

1.5

0.48

0.35

0.44

0.23

0.53

0.40

2.6

2.4

4.25

3.75

123

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9. Package outline

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Fig 23. Package outline SOT223 (SC-73)

Fig 24. Package outline SOT89 (SC-62/TO-243)

Product data sheet Rev. 7 — 12 October 2011 16 of 24

Page 17

NXP Semiconductors

09-11-12Dimensions in mm

0.65 max

2.1

1.9

1.6

1.4

0.35

0.25

0.45

0.35

2.1

1.9

1.1

0.9

0.3

0.2

1.05

0.95

1.3

Fig 25. Package outline SOT1061 (HUSON3)

10. Packing information

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number

Package Description Packing quantity

[2]

[1]

1000 3000 4000

BCP69 SOT223 8 mm pitch, 12 mm tape and reel -115 - -135

[3]

BC869 SOT89 8 mm pitch, 12 mm tape and reel; T1

8 mm pitch, 12 mm tape and reel; T3

-1 15 - -135

[4]

-146 - -

BC69PA SOT1061 4 mm pitch, 8 mm tape and reel - -115 -

[1] For further information and the availability of packing methods, see Section 14. [2] Valid for all available selection groups. [3] T1: normal taping [4] T3: 90 rotated taping

Product data sheet Rev. 7 — 12 October 2011 17 of 24

Page 18

NXP Semiconductors

sot223_fr

1.2

(4×)

1.2

(3×)

1.3

(4×)

1.3

(3×)

6.15

3.85

3.6

3.5

0.3

3.9 7.65

2.3 2.3

6.1

231

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

sot223_fw

1.9

6.7

8.9

8.7

1.9

(3×)

1.9

(2×)

1.1

6.2

2.7 2.7

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

11. Soldering

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Fig 26. Reflow soldering footprint SOT223 (SC-73)

Product data sheet Rev. 7 — 12 October 2011 18 of 24

Fig 27. Wave soldering footprint SOT223 (SC-73)

Page 19

NXP Semiconductors

solder lands

solder resist

occupied area

solder paste

sot089_fr

1.2

1.9

2.25

4.75

(3×)

0.7

(3×)

0.6

(3×)

1.1

(2×)

1.2

0.85

0.2

0.5

1.7

4.85

3.95

4.6

1.51.5

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot089_fw

0.7

5.3

6.6

2.4

3.5

0.5

1.8

(2×)

1.5

(2×)

7.6

1.9 1.9

Dimensions in mm

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Fig 28. Reflow soldering footprint SOT89 (SC-62/TO-243)

Fig 29. Wave soldering footprint SOT89 (SC-62/TO-243)

Product data sheet Rev. 7 — 12 October 2011 19 of 24

Page 20

NXP Semiconductors

occupied area

solder paste = solder lands

Dimensions in mm

sot1061_fr

solder resist

0.4

2.1

1.3

0.25

1.1 1.2

0.55

0.6

2.3

0.5 (2×)

0.5 (2×) 0.6 (2×)

0.4 (2×)

0.5

1.6

1.7

1.05

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Reflow soldering is the only recommended soldering method.

Fig 30. Reflow soldering footprint SOT1061 (HUSON3)

Product data sheet Rev. 7 — 12 October 2011 20 of 24

Page 21

NXP Semiconductors

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCP69_BC869_BC69PA v.7 20111012 Product data sheet - BC869_6

BCP69_6

Modifications:

BC869_6 20041108 Product data sheet - BC869_5 BC869_5 20031202 Product specification - BC869_4 BC869_4 19990408 Product specification - BC869_3 BC869_3 19980716 Product specification - BC869_CNV_2 BC869_CNV_2 19970401 Product specification - BCP69_6 20081202 Product data sheet - BCP69_5 BCP69_5 20031125 Product specification - BCP69_4 BCP69_4 20021115 Product specification - BCP69_3 BCP69_3 19990408 Product specification - BCP69_CNV_2 BCP69_CNV_2 19970312 Product specification - -

• The format of this document has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number BC69PA added

• Type number BCP69-16/DG and BCP69-16/IN removed

• Section 1 “Product profile”: updated

• Section 2 “Pinning information”: updated

• Section 3 “Ordering information”: updated

• Section 4 “Marking”: updated

• Section 10 “Packing information”:updated

• Table 6, 7 and 8: updated according to latest measurements

• Figure 1, 15 to 18 updated

• Figure 2 to 14, 24 to 25, 28 to 30: added

Product data sheet Rev. 7 — 12 October 2011 21 of 24

Page 22

NXP Semiconductors

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.

, unless otherwise

Product data sheet Rev. 7 — 12 October 2011 22 of 24

Page 23

NXP Semiconductors

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 7 — 12 October 2011 23 of 24

Page 24

NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 6

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 13

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 16

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 16

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16

10 Packing information . . . . . . . . . . . . . . . . . . . . 17

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 21

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 22

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23

14 Contact information. . . . . . . . . . . . . . . . . . . . . 23

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Document identifier: BCP69_BC869_BC69PA

Date of release: 12 October 2011