BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
Rev. 9 — 19 October 2011 Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-M ounted De vice (SMD) plastic packages.
Table 1. Product overview
Type number
BCP53 SOT223 SC-73 - BCP56
BCX53 SOT89 SC-62 TO-243 BCX56
BC53PA SOT1061 - - BC56PA
[1] Valid for all available selection groups.
[1]
Package NPN complement
NXP JEITA JEDEC
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
High-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
I
CEO
C
CM
collector-emitter voltage open base - - 80 V
collector current - - 1A
peak collector current single pulse; tp 1ms - - 2A
NXP Semiconductors
132
4
sym028
2, 4
3
1
321
006aaa231
2
1
3
Transparent top view
12
3
sym013
3
2
1
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
h
FE
DC current gain VCE= 2V;
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
…continued
= 150 mA
I
C
h
selection -10 VCE= 2V;
FE
IC= 150 mA
selection -16 VCE= 2V;
h
FE
IC= 150 mA
63 - 250
63 - 160
100 - 250
SOT1061
1base
2emitter
3 collector
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 2 of 22
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number
BCP53 SC-73 plastic surface-mounted package with increased
BCX53 SC-62 plastic surface-mounted package; exposed die pad for
BC53PA HUSON3 plastic thermal enhanced ultra thin small outline
[1] Valid for all available selection groups.
4. Marking
Table 5. Marking codes
Type number Marking code
BCP53 BCP53
BCP53-10 BCP53/10
BCP53-16 BCP53/16
BCX53 AH
BCX53-10 AK
BCX53-16 AL
BC53PA BV
BC53-10PA BW
BC53-16PA BX
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
[1]
Package
Name Description Version
heatsink; 4 leads
good heat transfer; 3 leads
package; no leads; 3 terminals; body 2 2 0.65 mm
SOT223
SOT89
SOT1061
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 3 of 22
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
collector-base voltage open emitter - 100 V
collector-emitter voltage open base - 80 V
emitter-base voltage open collector - 5V
collector current - 1A
peak collector current single pulse;
1ms
t
p
base current - 0.3 A
peak base current single pulse;
tp 1ms
total power dissipation T
amb
25 C
BCP53
BCX53
BC53PA
junction temperature - 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C
- 2A
- 0.3 A
[1]
-0.65W
[2]
-1.00W
[3]
-1.35W
[1]
-0.50W
[2]
-0.95W
[3]
-1.35W
[1]
-0.42W
[2]
-0.83W
[3]
-1.10W
[4]
-0.81W
[5]
-1.65W
2
.
2
.
2
.
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 4 of 22
NXP Semiconductors
T
amb
(°C)
–75 17512525 75–25
006aac676
1.0
0.5
1.5
2.0
P
tot
(W)
0.0
(1)
(2)
(3)
(4)
(5)
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
1.5
P
tot
(W)
1.0
0.5
0.0
–75 17512525 75–25
(1)
(2)
(3)
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
006aac674
T
(°C)
amb
1.5
(1)
P
tot
(W)
1.0
0.5
0.0
–75 17512525 75–25
2
2
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, mounting pad for collector 1 cm
(2)
(3)
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
006aac675
T
(°C)
amb
2
2
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
2
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves SOT1061
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 5 of 22
NXP Semiconductors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
BCP53
BCX53
BC53PA
thermal resistance from
junction to solder point
BCP53 - - 16 K/W
BCX53 - - 16 K/W
BC53PA - - 20 K/W
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
in free air
[1]
--192K/W
[2]
--125K/W
[3]
--93K/W
[1]
--250K/W
[2]
--132K/W
[3]
--93K/W
[1]
--298K/W
[2]
--151K/W
[3]
--114K/W
[4]
--154K/W
[5]
--76K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
2
.
2
.
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 6 of 22
NXP Semiconductors
006aac677
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
–1
10
–5
1010
–2
10
–4
10
2
10
–1
tp (s)
10
–3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aac678
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
–1
10
–5
1010
–2
10
–4
10
2
10
–1
tp (s)
10
–3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
FR4 PCB, standard footprint
Fig 4. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;
typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 5. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration for SOT223;
typical values
BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 19 October 2011 7 of 22
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