DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BC869
PNP medium power transistor;
20 V, 1 A
Product specification
Supersedes data of 2003 Dec 02
2004 Nov 08
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
FEATURES
• High current
• Three current gain selections
• 1.2 W total power dissipation.
APPLICATIONS
• Linear voltage regulators
• High side switch
• Supply line switch
• MOSFET driver
• Audio (pre-) amplifier.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS EIAJ
BC869 SOT89 SC-62 CEC
BC869-16 SOT89 SC-62 CGC
BC869-25 SOT89 SC-62 CHC
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. MAX. UNIT
V
CEO
collector-emitter
−−20 V
voltage
I
I
h
C
CM
FE
collector current (DC) −−1A
peak collector current −−2A
DC current gain
BC869 85 375 −
BC869-16 100 250 −
BC869-25 160 375 −
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
MARKING
BC869
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN DESCRIPTION
BC869 1 emitter
2
2 collector
3 base
3
1
sym079
321
2004 Nov 08 2
Philips Semiconductors Product specification
PNP medium power transistor;
BC869
20 V, 1 A
ORDERING INFORMATION
TYPE NUMBER
NAME DESCRIPTION VERSION
BC869 SC-62 plastic surface mounted package; collector pad for good heat
BC869-16
transfer; 3 leads
BC869-25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
CBO
CEO
EBO
C
CM
BM
tot
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
amb
≤ 25 °C
notes 1 and 2 − 0.5 W
notes 1 and 3 − 0.85 W
notes 1 and 4 − 1.2 W
T
T
T
stg
j
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
PACKAGE
SOT89
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08 3
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
1.6
handbook, halfpage
P
tot
(W)
1.2
0.8
0.4
0
-65 -5
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
(1)
(2)
(3)
55
115
T
amb
BC869
MLE323
175
(°C)
Fig.1 Power derating curves.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient T
amb
≤ 25 °C
notes 1 and 2 250 K/W
notes 1 and 3 147 K/W
notes 1 and 4 104 K/W
R
th(j-s)
thermal resistance from junction to solder point T
≤ 25 °C 20 K/W
amb
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08 4
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
3
10
handbook, full pagewidth
Z
th
(K/W)
(1)
2
(2)
10
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
−1
10
−5
10
−4
10
−3
10
BC869
MLE324
t
P
t
p
T
−2
10
−1
10
1
10 10
p
δ =
T
t
2
tp (s)
3
10
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
2 mm
2.8 mm
1.8 mm
1.1
mm
0.7 mm 0.8 mm
3.7 mm
3.5 mm
MLE321
(7) δ = 0.05.
(8) δ = 0.02.
handbook, halfpage
(9) δ = 0.01.
(10) δ =0.
40 mm
2.5 mm
0.5 mm
3.96 mm
32 mm
10 mm
10 mm
1 mm
5 mm
1.6 mm
MLE322
Fig.3 SOT89 standard mounting conditions for
reflow soldering.
2004 Nov 08 5
Fig.4 Printed-circuitboardfor SOT89; mounting
pad for collector 1 cm2.
Philips Semiconductors Product specification
PNP medium power transistor;
BC869
20 V, 1 A
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
V
C
f
T
FE
CEsat
BE
c
collector-base cut-off current VCB= −25 V; IE=0A −−−100 nA
= −25 V; IE=0A −−−10 µA
V
CB
emitter-base cut-off current VEB= −5 V; IC=0A −−−100 nA
DC current gain BC869
VCE= −10 V; IC= −5mA 50 −−
VCE= −1 V; IC= −500 mA 85 − 375
VCE= −1 V; IC= −1A 60 −−
BC869−16
VCE= −1 V; IC= −500 mA 100 − 250
BC869−25
VCE= −1 V; IC= −500 mA 160 − 375
collector-emitter saturation voltage IC= −1 A; IB= −100 mA −−−500 mV
base-emitter voltage VCE= −10 V; IC= −5mA −−−700 mV
VCE= −1 V; IC= −1A −−−1V
collector capacitance IE=ie= 0 A; VCB= −10 V;
− 28 − pF
f = 1 MHz
transition frequency VCE= −5 V; IC= −50 mA;
40 140 − MHz
f = 100 MHz
2004 Nov 08 6
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
−2.4
handbook, halfpage
I
C
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
0
0
BC869-16.
(1) I
= −18 mA.
B
(2) IB= −16.2 mA.
(3) IB= −14.4 mA.
(4) IB= −12.6 mA.
−1 −5−2 −3 −4
(5) IB= −10.8 mA.
(6) IB= −9.0 mA.
(7) IB= −7.2 mA.
(8) IB= −5.4 mA.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB= −3.6 mA.
(10) IB= −1.8 mA.
MLE317
−1
handbook, halfpage
V
BE
(V)
−1
−10
−4
−10
BC869-16.
VCE= −1V.
−10
BC869
MLE314
−3
−10
−2
−10
−1
−1
IC (A)
−10
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
3
10
handbook, halfpage
h
FE
2
10
−4
−10
BC869-16.
VCE= −1V.
−10
−3
−10−2−10
−1
MLE319
−1 −10
IC (A)
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
−1
handbook, halfpage
V
CEsat
(V)
−1
−10
−2
−10
−3
−10
−10
BC869-16.
IC/IB= 10.
−4
−10
−3
−10
−2
−10
−1
−1 −10
MLE320
IC (A)
Fig.7 DC current gain as a function of collector
current; typical values.
2004 Nov 08 7
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
−2.4
handbook, halfpage
I
C
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
0
0
BC869-25.
(1) IB= −12 mA.
(2) IB= −10.8 mA.
(3) IB= −9.6 mA.
(4) IB= −8.4 mA.
−1 −5
−2 −3 −4
(5) IB= −7.2 mA.
(6) IB= −6.0 mA.
(7) IB= −4.8 mA.
(8) IB= −3.6 mA.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB= −2.4 mA.
(10) IB= −1.2 mA.
MLE313
−1
handbook, halfpage
V
BE
(V)
−1
−10
−4
−10
BC869-25.
VCE= −1V.
−10
BC869
MLE318
−3
−10
−2
−10
−1
−1 −10
IC (A)
Fig.9 Collector current as a function of
collector-emitter voltage; typical values.
3
10
handbook, halfpage
h
FE
2
10
−4
−10
BC869-25.
VCE= −1V.
−10
−3
−10
−2
−10
−1
MLE315
−1 −10
IC (mA)
Fig.10 Base-emitter voltage as function of collector
current; typical values.
−1
handbook, halfpage
V
CEsat
(V)
−1
−10
−2
−10
−3
−10
−4
−10
BC869-25.
IC/IB= 10.
−10−3−10
−2
−10
−1
MLE316
−1 −10
IC (A)
Fig.11 DC current gain as a function of collector
current; typical values.
2004 Nov 08 8
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
PNP medium power transistor;
BC869
20 V, 1 A
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
D
b
p3
B
A
123
w M
DIMENSIONS (mm are the original dimensions)
UNIT
mm
1.6
1.4
A
b
p1
0.48
0.35
b
p2
0.53
0.40
b
1.8
1.4
p3
c
0.44
0.23
E
L
b
p2
b
p1
e
1
e
0 2 4 mm
scale
D
E
e
e
1
4.6
2.6
3.0
4.4
2.4
1.5
p
H
4.25
3.75
H
E
c
L
1.2
0.8
w
p
0.13
E
OUTLINE
VERSION
SOT89 TO-243 SC-62
IEC JEDEC JEITA
REFERENCES
2004 Nov 08 9
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
04-08-03
Philips Semiconductors Product specification
PNP medium power transistor;
BC869
20 V, 1 A
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. Fordata sheets describing multiple type numbers, the highest-level productstatus determines the data sheet status.
DATA SHEET
STATUS
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITION
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any otherconditionsabovethose given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. Whenthe product is in fullproduction
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2004 Nov 08 10
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/06/pp11 Date of release: 2004 Nov 08 Document order number: 9397 750 13861
SCA76
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