DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
BC869
PNP medium power transistor;
20 V, 1 A
Product specification
Supersedes data of 2003 Dec 02
2004 Nov 08
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
FEATURES
• High current
• Three current gain selections
• 1.2 W total power dissipation.
APPLICATIONS
• Linear voltage regulators
• High side switch
• Supply line switch
• MOSFET driver
• Audio (pre-) amplifier.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS EIAJ
BC869 SOT89 SC-62 CEC
BC869-16 SOT89 SC-62 CGC
BC869-25 SOT89 SC-62 CHC
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. MAX. UNIT
V
CEO
collector-emitter
−−20 V
voltage
I
I
h
C
CM
FE
collector current (DC) −−1A
peak collector current −−2A
DC current gain
BC869 85 375 −
BC869-16 100 250 −
BC869-25 160 375 −
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
MARKING
BC869
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PIN DESCRIPTION
BC869 1 emitter
2
2 collector
3 base
3
1
sym079
321
2004 Nov 08 2
Philips Semiconductors Product specification
PNP medium power transistor;
BC869
20 V, 1 A
ORDERING INFORMATION
TYPE NUMBER
NAME DESCRIPTION VERSION
BC869 SC-62 plastic surface mounted package; collector pad for good heat
BC869-16
transfer; 3 leads
BC869-25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
CBO
CEO
EBO
C
CM
BM
tot
collector-base voltage open emitter −−32 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−200 mA
total power dissipation T
amb
≤ 25 °C
notes 1 and 2 − 0.5 W
notes 1 and 3 − 0.85 W
notes 1 and 4 − 1.2 W
T
T
T
stg
j
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
PACKAGE
SOT89
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08 3
Philips Semiconductors Product specification
PNP medium power transistor;
20 V, 1 A
1.6
handbook, halfpage
P
tot
(W)
1.2
0.8
0.4
0
-65 -5
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
(1)
(2)
(3)
55
115
T
amb
BC869
MLE323
175
(°C)
Fig.1 Power derating curves.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient T
amb
≤ 25 °C
notes 1 and 2 250 K/W
notes 1 and 3 147 K/W
notes 1 and 4 104 K/W
R
th(j-s)
thermal resistance from junction to solder point T
≤ 25 °C 20 K/W
amb
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08 4
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