NXP BC 860C NXP Datasheet
DATA SH EET
DISCRETE SEMICONDUCTORS
BC859; BC860
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 May 28
2004 Jan 16
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859; BC860
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
complements: BC849 and BC850.
NPN
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
BC859B 4B* BC860B 4F*
BC859C 4C* BC860C 4G*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BC859B − plastic surface mounted pack ag e; 3 leads SOT23
BC859C
BC860B
BC860C
2004 Jan 16 2
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859; BC860
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BC859 − −30 V
BC860 − −50 V
collector-emitter voltage open base
BC859 − −30 V
BC860 − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −100 mA
peak collector current − −200 mA
peak base current − −200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16 3
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