NXP BC 857C NXP Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BC856; BC857; BC858

PNP general purpose transistors

Product specification
Supersedes data of 1999 Apr 12

2002 Feb 04

Philips Semiconductors Product specification

PNP general purpose transistors BC856; BC857; BC858

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.

MARKING

TYPE NUMBER MARKING CODE

BC856 3D*
BC856A 3A*
BC856B 3B*
BC857 3H*
BC857A 3E*
BC857B 3F*
BC857C 3G*
BC858B 3K*

(1)

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

1

21

MAM256

Fig.1 Simplified outline (SOT23) and symbol.

3

2

Note

1. * = -: made in Hong Kong.
* = t: made in Malaysia.

2002 Feb 04 2

Philips Semiconductors Product specification

PNP general purpose transistors BC856; BC857; BC858

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter

BC856 −−80 V
BC857 −−50 V
BC858 −−30 V

collector-emitter voltage open base

BC856 −−65 V
BC857 −−45 V

BC858 −−30 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

in free air; note 1 500 K/W

ambient

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

2002 Feb 04 3

Philips Semiconductors Product specification

PNP general purpose transistors BC856; BC857; BC858

CHARACTERISTICS

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

f

T

F noise figure I

collector-base cut-off current VCB= −30 V; IE=0 −−1−15 nA

V

= −30 V; IE=0;

CB

T

= 150 °C

j

−−−4µA

emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain IC= −2 mA; VCE= −5V

BC856 125 − 475

BC857 125 − 800

BC856A; BC857A 125 − 250

BC856B; BC857B; BC858B 220 − 475

BC857C 420 − 800
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−75 −300 mV

I

= −100 mA; IB= −5 mA;

C

−−250 −650 mV

note 1

base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−700 − mV

I

= −100 mA; IB= −5 mA;

C

−−850 − mV

note 1

base-emitter voltage IC= −2 mA; VCE= −5V −600 −650 −750 mV

I

= −10 mA; VCE= −5V −−−820 mV

C

collector capacitance VCB= −10 V; IE=Ie=0;

− 4.5 − pF

f = 1 MHz

transition frequency VCE= −5 V; IC= −10 mA;

100 −−MHz

f = 100 MHz

= −200 µA; VCE= −5V;

C

− 210dB
RS=2kΩ; f = 1 kHz;
B = 200 Hz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2002 Feb 04 4