DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BC856; BC857; BC858
PNP general purpose transistors
Product specification
Supersedes data of 1999 Apr 12
2002 Feb 04
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
TYPE NUMBER MARKING CODE
BC856 3D*
BC856A 3A*
BC856B 3B*
BC857 3H*
BC857A 3E*
BC857B 3F*
BC857C 3G*
BC858B 3K*
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
2
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04 2
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BC856 −−80 V
BC857 −−50 V
BC858 −−30 V
collector-emitter voltage open base
BC856 −−65 V
BC857 −−45 V
BC858 −−30 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air; note 1 500 K/W
ambient
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2002 Feb 04 3
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
CHARACTERISTICS
T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F noise figure I
collector-base cut-off current VCB= −30 V; IE=0 −−1−15 nA
V
= −30 V; IE=0;
CB
T
= 150 °C
j
−−−4µA
emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain IC= −2 mA; VCE= −5V
BC856 125 − 475
BC857 125 − 800
BC856A; BC857A 125 − 250
BC856B; BC857B; BC858B 220 − 475
BC857C 420 − 800
collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−75 −300 mV
I
= −100 mA; IB= −5 mA;
C
−−250 −650 mV
note 1
base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−700 − mV
I
= −100 mA; IB= −5 mA;
C
−−850 − mV
note 1
base-emitter voltage IC= −2 mA; VCE= −5V −600 −650 −750 mV
I
= −10 mA; VCE= −5V −−−820 mV
C
collector capacitance VCB= −10 V; IE=Ie=0;
− 4.5 − pF
f = 1 MHz
transition frequency VCE= −5 V; IC= −10 mA;
100 −−MHz
f = 100 MHz
= −200 µA; VCE= −5V;
C
− 210dB
RS=2kΩ; f = 1 kHz;
B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Feb 04 4
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
500
handbook, halfpage
h
FE
MGT711
400
(1)
300
200
100
0
−10−2−10
−1
(2)
(3)
−1 −10 −102−10
IC (mA)
BC857A; VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150°C.
=25°C.
= −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT712
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 −102−10
3
IC (mA)
BC857A; VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)(3)
−1 −10 −10
MGT713
2
IC (mA)
BC857A; IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
−1000
−800
−600
(1)
(2)
(3)
MGT714
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857A; IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04 5
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
1000
handbook, halfpage
h
FE
MGT715
800
600
(1)
400
(2)
200
0
−10−2−10
−1
(3)
−1 −10 −102−10
IC (mA)
BC857B; VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT716
−1000
−800
(1)
(2)
−600
−400
(3)
−200
3
0
−10−2−10
−1
−1 −10 −102−10
3
IC (mA)
BC857B; VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(3)
(2)
−1 −10 −10
MGT717
2
IC (mA)
BC857B; IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
MGT718
−1000
−800
(1)
(2)
−600
(3)
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857B; IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04 6
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
1000
handbook, halfpage
h
FE
(1)
MGT719
800
600
(2)
400
(3)
200
0
−10−2−10
−1
−1 −10 −102−10
IC (mA)
BC857C; VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
−1200
handbook, halfpage
V
BE
(mV)
MGT720
−1000
−800
(1)
(2)
−600
−400
(3)
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857C; VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
4
−10
handbook, halfpage
V
CEsat
(mV)
3
−10
2
−10
−10
−1
−10
(1)
(2)
(3)
−1 −10 −10
MGT721
2
IC (mA)
BC857C; IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−1200
handbook, halfpage
V
BEsat
(mV)
MGT722
−1000
−800
(1)
(2)
−600
(3)
−400
−200
0
3
−10
−1
−1 −10 −10
2
−10
3
IC (mA)
BC857C; IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04 7
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
0.09
3.0
2.8
0.38
IEC JEDEC EIAJ
e
E
1.4
1.9
1.2
REFERENCES
0.95
e
1
UNIT
A
max.
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
2002 Feb 04 8
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Feb 04 9
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
NOTES
2002 Feb 04 10
Philips Semiconductors Product specification
PNP general purpose transistors BC856; BC857; BC858
NOTES
2002 Feb 04 11
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09167
SCA74
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