JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC856ALT1, BLT1 TRANSISTOR (PNP)
BC857ALT1, BLT1 CLT1
BC858ALT1, BLT1 CLT1
FEATURES
Power dissipation
P
Collector current
I
Collector-base voltage
V
BC857 -50 V
BC858 -30 V
Operating and storage junction temperature range
0.225 W (Tamb=25℃) Note1
CM:
-0.1 A
CM:
BC856 -80 V
CBO:
T
, T
: -55℃ to +150℃
J
stg
SOT-23
1. BASE
2. EMI TTE R
3. COLLECTOR
Unit: mm
0
.
1
2. 4
1. 3
5
9
.
9
9
0
.
.
2
1
5
9
.
0
Note1: Transistor mounted on an FR4 Printed-circuit board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
4
.
0
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage BC856
BC857
BC858
Collector-emitter breakdown voltage BC856
BC857
BC858
Emitter-base breakdown voltage
Collector cut-off current BC856
BC857
BC858
Collector cut-off current BC856
BC857
BC858
Emitter cut-off current
DC current gain BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
V
CBO
V
Ic= -10 mA, IB=0
CEO
V
EBO
I
CBO
I
CEO
V
I
EBO
h
VCE= -5V, IC= -2mA
FE(1)
Ic= -10
µA, I
I
= -10µA, IC=0
E
= -70 V , IE=0
V
CB
V
= -45 V , IE=0
CB
= -25 V , IE=0
V
CB
= -60 V , IB=0
V
CE
V
= -40 V , IB=0
CE
V
= -25 V , IB=0
CE
= -5 V , IC=0 -0.1
EB
E
=0
-80
-50
V
-30
-65
-45
V
-30
-5 V
-0.1
-0.1
µA
µA
µA
125
220
420
250
475
800
(sat) IC=-1 00mA, IB= -5 mA -0.5 V
Collector-emitter saturat i on voltage
Base-emitter saturation voltag e
Transition frequency
V
CE
(sat) IC= -100 mA, IB= -5mA -1.1 V
V
BE
f
T
DEVICE MARKING
BC856ALT1=3A; BC856BLT1=3B; BC857ALT1=3E;BC857BLT1=3F;
BC857CLT1=3G; BC858ALT1=3J; BC858BLT1=3K; BC858CLT1=3L
V
= -5 V, IC= -10mA
CE
f=100MHz
100 MHz
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