NXP BC 850C NXP Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BC849; BC850

NPN general purpose transistors

Product specification
Supersedes data of 1998 Aug 06

1999 Apr 08

Philips Semiconductors Product specification

NPN general purpose transistors BC849; BC850

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.

MARKING

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

CODE

BC849B 2B∗ BC850B 2F∗
BC849C 2C∗ BC850C 2G∗

Note

1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.

(1)

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

21

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

3

1

2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC849 − 30 V
BC850 − 50 V

V

CEO

collector-emitter voltage open base

BC849 − 30 V
BC850 − 45 V

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 08 2

Philips Semiconductors Product specification

NPN general purpose transistors BC849; BC850

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

F noise figure I

thermal resistance from junction to ambient note 1 500 K/W

collector cut-off current IE= 0; VCB=30V −−15 nA

I

= 0; VCB=30V; Tj= 150 °C −−5µA

E

emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC=10µA; VCE=5V;

BC849B; BC850B − 240 −

see Figs 2 and 3

BC849C; BC850C − 450 −

DC current gain I

BC849B; BC850B 200 290 450

= 2 mA; VCE=5V;

C

see Figs 2 and 3

BC849C; BC850C 420 520 800

collector-emitter saturation
voltage

IC= 10 mA; IB= 0.5 mA − 90 250 mV
I

= 100 mA; IB=5mA − 200 600 mV

C

base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA; note 1 − 700 − mV

I

= 100 mA; IB= 5 mA; note 1 − 900 − mV

C

base-emitter voltage IC= 2 mA; VCE= 5 V; note 2 580 660 700 mV

I

= 10 mA; VCE= 5 V; note 2 −−770 mV

C

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2.5 − pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz

= 200 µA; VCE=5V; RS=2kΩ;

C

−−4dB

f = 10 Hz to 15.7 kHz

= 200 µA; VCE=5V; RS=2kΩ;

I

C

−−4dB

f = 1 kHz; B = 200 Hz

Notes

1. V

decreases by about 1.7 mV/K with increasing temperature.

BEsat

2. VBE decreases by about 2 mV/K with increasing temperature.

1999 Apr 08 3

Philips Semiconductors Product specification

NPN general purpose transistors BC849; BC850

300

handbook, full pagewidth

h

FE

200

100

0

−2

10

BC849B; BC850B.

MBH724

VCE = 5 V

−1

10

1

10 10

2

10

IC (mA)

3

Fig.2 DC current gain; typical values.

600

handbook, full pagewidth

h

FE

400

200

0

−2

10

BC849C; BC850C.

MBH725

VCE = 5 V

−1

10

1

10 10

2

10

IC (mA)

3

Fig.3 DC current gain; typical values.

1999 Apr 08 4

Philips Semiconductors Product specification

NPN general purpose transistors BC849; BC850

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

mm

A

1.1

0.9

OUTLINE
VERSION

SOT23

max.

1999 Apr 08 5

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

NPN general purpose transistors BC849; BC850

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 08 6

Philips Semiconductors Product specification

NPN general purpose transistors BC849; BC850

NOTES

1999 Apr 08 7

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie BesantRoad, Worli, MUMBAI 400 025,
Tel. [phone], Fax.[phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext.2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax.[phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax.[phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC,MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax.[phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax.[phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax.[phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax.[phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax.[phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax.[phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 115002/00/05/pp8 Date of release: 1999 Apr08 Document order number: 9397 750 05529

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.