DISCRETE SEMICONDUCTORS
DATA SH EET
BC849; BC850
NPN general purpose transistors
Product specification
Supersedes data of 1999 Apr 08
2004 Jan 16
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
CODE
BC849B 2B* BC850B 2F*
BC849C 2C* BC850C 2G*
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
(1)
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
BC849B − plastic surface mounted package; 3 leads SOT23
BC849C
BC850B
BC850C
2004 Jan 16 2
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter
BC849 − 30 V
BC850 − 50 V
collector-emitter voltage open base
BC849 − 30 V
BC850 − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16 3
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