NXP BC 847CW NXP Datasheet
BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 8 — 20 August 2012 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
BC847 SOT23 - TO-236AB BC857
BC847A BC857A
BC847B BC857B
BC847C BC857C
BC847W SOT323 SC-70 - BC857W
BC847AW BC857AW
BC847BW BC857BW
BC847CW BC857CW
BC847T SOT416 SC-75 - BC857T
BC847AT BC857AT
BC847BT BC857BT
BC847CT BC857CT
BC847AM SOT883 SC-101 - BC857AM
BC847BM BC857BM
BC847CM BC857CM
[1]
Package PNP complement
NXP JEITA JEDEC
[1] Valid for all available selection groups.
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Three different gain selections
1.3 Applications
General-purpose switching and amplification
NXP Semiconductors
006aaa144
12
3
sym021
3
2
1
3
1
2
Transparent
top view
sym021
3
2
1
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
h
CEO
C
FE
collector-emitter voltage open base - - 45 V
collector current - - 100 mA
DC current gain VCE=5V; IC=2mA 110 - 800
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23, SOT323, SOT416
1base
2emitter
3 collector
BC847 series
45 V, 100 mA NPN general-purpose transistors
group A 110 180 220
h
FE
group B 200 290 450
h
FE
group C 420 520 800
h
FE
SOT883
1base
2emitter
3 collector
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 20 August 2012 2 of 18
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3. Ordering information
Table 4. Ordering information
Type number
BC847 - plastic surface-mounted package; 3 leads SOT23
BC847A
BC847B
BC847C
BC847W SC-70 plastic surface-mounted package; 3 leads SOT323
BC847AW
BC847BW
BC847CW
BC847T SC-75 plastic surface-mounted package; 3 leads SOT416
BC847AT
BC847BT
BC847CT
BC847AM SC-101 leadless ultra small plastic package; 3 solder lands;
BC847BM
BC847CM
BC847 series
45 V, 100 mA NPN general-purpose transistors
[1]
Package
Name Description Version
body 1.0 0.6 0.5 mm
SOT883
4. Marking
[1] Valid for all available selection groups.
Table 5. Marking codes
Type number Marking code
[1]
Type number Marking code
BC847 1H* BC847T 1N
BC847A 1E* BC847AT 1E
BC847B 1F* BC847BT 1F
BC847C 1G* BC847CT 1G
BC847W 1H* BC847AM D4
BC847AW 1E* BC847BM D5
BC847BW 1F* BC847CM D6
BC847CW 1G*
[1] * = placeholder for manufacturing site code
[1]
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 20 August 2012 3 of 18
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5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
BC847 series
45 V, 100 mA NPN general-purpose transistors
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 45 V
emitter-base voltage open colle ctor - 6 V
collector current - 100 mA
peak collector current single pulse;
1ms
t
p
peak base current single pulse;
tp 1ms
total power dissipation T
amb
25 C
SOT23 - 250 mW
SOT323 - 200 mW
SOT416 - 150 mW
SOT883
junction temperature - 150 C
ambient temperature 65 +150 C
storage temperature 65 +150 C
-200mA
-100mA
[1]
[2]
-250mW
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
in free air
junction to ambient
SOT23 - - 500 K/W
SOT323 - - 625 K/W
SOT416 - - 833 K/W
SOT883
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 20 August 2012 4 of 18
[1]
[2]
--500K/W
NXP Semiconductors
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF noise figure I
45 V, 100 mA NPN general-purpose transistors
=25C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE=5V; IC=10A
group A - 90 -
h
FE
group B - 150 -
h
FE
group C - 270 -
h
FE
DC current gain V
group A 110 180 220
h
FE
group B 200 290 450
h
FE
group C 420 520 800
h
FE
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage IC=2mA; VCE=5V
transition frequency VCE=5V; IC=10mA;
collector capacitance VCB=10V; IE=ie=0A;
emitter capacitance VEB=0.5V; IC=ic=0A;
VCB=30V; IE=0A - - 15 nA
=30V; IE=0A;
V
CB
= 150 C
T
j
VEB=5V; IC= 0 A - - 100 nA
=5V; IC=2mA 110 - 800
CE
IC=10mA; IB=0.5mA - 90 200 mV
=100mA; IB=5mA
I
C
IC=10mA; IB=0.5mA
=100mA; IB=5mA
I
C
=10mA; VCE=5V - - 770 mV
I
C
f=100MHz
f=1MHz
f=1MHz
=200A; VCE=5V;
C
=2k; f = 1 kHz;
R
S
B=200Hz
BC847 series
--5A
[1]
- 200 400 mV
[2]
- 700 - mV
[2]
- 900 - mV
[2]
580 660 700 mV
100--MHz
--1.5pF
-11-pF
-210dB
[1] Pulse test: tp 300 s; = 0.02.
[2] V
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 8 — 20 August 2012 5 of 18
decreases by approximately 2 mV/K with increasing temperature.
BE
NXP Semiconductors
mgt723
10
−1
11010210
3
IC (mA)
0
400
300
200
100
h
FE
(1)
(2)
(3)
mgt724
10
−1
11010210
3
IC (mA)
0
1200
1000
800
600
400
200
V
BE
(mV)
(1)
(2)
(3)
10
3
10
2
10
mgt725
10
−1
11010210
3
IC (mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt726
10
−1
11010210
3
IC (mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
BC847 series
45 V, 100 mA NPN general-purpose transistors
VCE=5V
amb
amb
amb
= 150 C
=25C
= 55 C
(1) T
(2) T
(3) T
Fig 1. Group A: DC current gain as a function of
collector current; typical values
=5V
V
CE
amb
amb
amb
= 55 C
=25C
= 150 C
(1) T
(2) T
(3) T
Fig 2. Group A: Base-emitter voltage as a function of
collector current; typical values
IC/IB=20
(1) T
(2) T
(3) T
Fig 3. Group A: Collector-emitter saturation voltage
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
= 150 C
amb
amb
amb
=25C
= 55 C
as a function of collector current; typical
values
(1) T
(2) T
(3) T
Fig 4. Group A: Base-emitter saturation vo ltage as a
=10
I
C/IB
= 55 C
amb
=25C
amb
= 150 C
amb
function of collector current; typical values
Product data sheet Rev. 8 — 20 August 2012 6 of 18