BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 — 18 February 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
n Low collector capacitance
n Low collector-emitter saturation voltage
n Closely matched current gain
n Reduces number of components and board space
n No mutual interference between the transistors
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
V
I
h
CEO
C
FE
collector-emitter voltage open base - - 45 V
collector current - - 100 mA
DC current gain VCE=5V; IC= 2 mA 200 - 450
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
132
6
5
2
sym019
4
TR2
3
56
4
TR1
1
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code
BC847BPN 13*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Name Description Version
[1]
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 45 V
emitter-base voltage open collector - 5 V
collector current - 100 mA
peak collector current single pulse;
t
≤ 1ms
p
peak base current single pulse;
t
≤ 1ms
p
total power dissipation T
total power dissipation T
amb
amb
≤ 25 °C
≤ 25 °C
- 200 mA
- 200 mA
[1]
- 220 mW
[2]
- 250 mW
[1]
- 300 mW
[2]
- 400 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 2 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
6. Thermal characteristics
500
P
tot
(mW)
400
300
200
100
0
−75 17512525 75−25
006aab419
(1)
(2)
T
(°C)
amb
2
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
in free air
[1]
- - 568 K/W
[2]
- - 500 K/W
- - 230 K/W
junction to solder point
Per device
R
th(j-a)
thermal resistance from
in free air
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[1]
- - 416 K/W
[2]
- - 313 K/W
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 3 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
006aab420
2
10
tp (s)
3
10
Z
th(j-a)
(K/W)
3
10
δ = 1
0.75
0.50
0.20
0.05
0.01
0
0.33
0.10
0.02
−4
10
−3
10
−2
−1
10
1
1010
2
10
10
1
−5
10
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
Z
th(j-a)
(K/W)
3
10
δ = 1
0.75
0.50
2
10
10
0.33
0.20
0.10
0.05
0.02
0.01
0
1
−5
10
−4
10
−3
10
FR4 PCB, mounting pad for collector 1 cm
−2
2
−1
10
1
1010
2
10
tp (s)
3
10
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 4 of 14
NXP Semiconductors
7. Characteristics
Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
=25°C unless otherwise specified.
collector-basecut-off
current
emitter-base cut-off
current
DC current gain VCE=5V; IC= 2 mA 200 - 450
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage IC= 2 mA; VCE=5V
TR1 (NPN) 580 655 700 mV
TR2 (PNP) 600 655 750 mV
collector capacitance IE=ie= 0 A; VCB=10V;
TR1 (NPN) - - 1.5 pF
TR2 (PNP) - - 2.2 pF
emitter capacitance IC=ic= 0 A; VEB= 0.5 V;
TR1 (NPN) - 11 - pF
TR2 (PNP) - 10 - pF
transition frequency IC= 10 mA; VCE=5V;
VCB=30V; IE=0A --15nA
=30V; IE=0A;
V
CB
T
= 150 °C
j
--5µA
VEB=5V; IC= 0 A - - 100 nA
IC= 10 mA; IB= 0.5 mA - - 100 mV
= 100 mA; IB=5mA
I
C
[1]
- - 300 mV
IC= 10 mA; IB= 0.5 mA - 755 - mV
f=1MHz
f=1MHz
100 - - MHz
f = 100 MHz
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 5 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
600
h
FE
500
400
300
200
100
0
−1
10
11010210
(1)
(2)
(3)
mgt727
3
IC (mA)
VCE=5V
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 4. TR1 (NPN): DC current gain as a function of
collector current; typical values
I
(A)
0.20
C
0.15
0.10
0.05
0
054231
T
amb
IB (mA) = 4.0
=25°C
3.2
2.4
1.6
0.8
006aab422
3.6
2.8
2.0
1.2
0.4
VCE (V)
Fig 5. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
C
mgt728
3
(mA)
V
BE
(mV)
1200
1000
800
600
400
200
(1)
(2)
(3)
0
−2
10
−1
10
11010210
VCE=5V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 6. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
10
006aab423
2
I
(mA)
C
3
10
V
BEsat
(V)
1.2
1.0
0.8
0.6
0.4
0.2
(1)
(2)
(3)
−1
10
110
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 7. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 6 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
mgt729
IC (mA)
V
(mV)
10
CEsat
10
10
4
3
2
(1)
(2)
(3)
10
−1
10
11010210
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 8. TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
9
10
f
T
(Hz)
8
10
7
3
10
−1
10
VCE= 5 V; f = 1 MHz; T
amb
=25°C
006aab424
2
101
IC (mA)
10
Fig 9. TR1 (NPN): Transition frequency as a function
of collector current; typical values
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 7 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
−10
006aab425
2
IC (mA)
−10
3
600
h
FE
400
200
0
−1
−10
(1)
(2)
(3)
−1 −10
VCE= −5V
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 10. TR2 (PNP): DC current gain as a function of
collector current; typical values
−2.8
−2.1
−1.4
−0.7
006aab426
−3.15
−2.45
−1.75
−1.05
−0.35
VCE (V)
−0.20
I
C
(A)
−0.15
−0.10
−0.05
0
0 −5−4−2 −3−1
T
amb
IB (mA) = −3.5
=25°C
Fig 11. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1200
V
BE
mV
−1000
−800
−600
−400
−200
−10−2−10
(1)
(2)
(3)
−1
−1
−10 −10
mld700
2
IC (mA)
−10
3
VCE= −5V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 12. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
2
IC (mA)
mld702
−10
3
−1200
V
BEsat
(mV)
−1000
−800
−600
−400
−200
(1)
(2)
(3)
−1
−1−10
−10 −10
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 150 °C
Fig 13. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 8 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
−10
2
IC (mA)
mld701
−10
V
CEsat
(mV)
−10
−10
−10
−10
−10
4
3
2
(2)
−1
−1 −10
(1)
(3)
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C
=25°C
= −55 °C
Fig 14. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
9
10
f
T
(Hz)
8
10
7
3
10
−1
−10
VCE= −5 V; f = 1 MHz; T
amb
=25°C
006aab427
2
−10−1
IC (mA)
−10
Fig 15. TR2 (PNP): Transition frequency as a function
of collector current; typical values
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 9 of 14
NXP Semiconductors
8. Package outline
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Fig 16. Package outline SOT363 (SC-88)
9. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BC847BPN SOT363 4 mm pitch, 8 mm tape and reel; T1
2.2
1.8
2.2
1.35
2.0
1.15
pin 1
index
132
0.65
1.3
4 mm pitch, 8 mm tape and reel; T2
1.1
0.8
0.45
465
0.15
0.3
0.2
0.25
0.10
06-03-16Dimensions in mm
[1]
3000 10000
[2]
-115 -135
[3]
-125 -165
[1] For further information and the availability of packing methods, seeSection 13.
[2] T1: normal taping
[3] T2: reverse taping
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 10 of 14
NXP Semiconductors
10. Soldering
2.35
1.5
0.6
(4×)
0.5
(4×)
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
2.65
solder lands
0.4 (2×)
solder resist
solder paste
0.5
(4×)
0.6
(4×)
0.6
(2×)
1.8
Fig 17. Reflow soldering footprint SOT363 (SC-88)
1.5
4.5
1.5
1.3 1.3
2.45
5.3
Fig 18. Wave soldering footprint SOT363 (SC-88)
0.3
occupied area
Dimensions in mm
sot363_fr
solder lands
2.5
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 11 of 14
NXP Semiconductors
45 V, 100 mA NPN/PNP general-purpose transistor
BC847BPN
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC847BPN_4 20090218 Product data sheet - BC847BPN_3
Modifications:
BC847BPN_3 20011026 Product specification - BC847BPN_2
BC847BPN_2 19990426 Preliminary specification - BC847BPN_1
BC847BPN_1 19970709 Preliminary specification - -
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 4 “Marking”: updated
• Section 7 “Characteristics”: enhanced
• Section 9 “Packing information”: added
• Section 10 “Soldering”: added
• Section 12 “Legal information”: updated
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 12 of 14
NXP Semiconductors
12. Legal information
12.1 Data sheet status
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product statusof device(s) described in this document mayhave changedsince this document was published and may differ incase of multiple devices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included hereinand shall have no liabilityfor the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the sameproduct type number(s) and title.A short datasheetis intended
for quickreference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However,NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System ofIEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: Allreferenced brands, product names,service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 13 of 14
NXP Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Packing information. . . . . . . . . . . . . . . . . . . . . 10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Contact information. . . . . . . . . . . . . . . . . . . . . 13
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 18 February 2009
Document identifier: BC847BPN_4
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