NXP BC847BPN Schematic [ru]

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

Rev. 04 — 18 February 2009 Product data sheet

1. Product profile

1.1 General description

NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.

1.2 Features

n Low collector capacitance
n Low collector-emitter saturation voltage
n Closely matched current gain
n Reduces number of components and board space
n No mutual interference between the transistors

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

V
I
h

CEO

C

FE

collector-emitter voltage open base - - 45 V
collector current - - 100 mA
DC current gain VCE=5V; IC= 2 mA 200 - 450

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

132

6

5

2

sym019

4

TR2

3

56

4

TR1

1

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363

4. Marking

Table 4. Marking codes

Type number Marking code

BC847BPN 13*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

Name Description Version

[1]

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

Per device

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 45 V
emitter-base voltage open collector - 5 V
collector current - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

total power dissipation T

amb

amb

≤ 25 °C

≤ 25 °C

- 200 mA

- 200 mA

[1]

- 220 mW

[2]

- 250 mW

[1]

- 300 mW

[2]

- 400 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

BC847BPN_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 February 2009 2 of 14

NXP Semiconductors

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint

Fig 1. Per device: Power derating curves SOT363 (SC-88)

6. Thermal characteristics

500

P

tot

(mW)

400

300

200

100

0

−75 17512525 75−25

006aab419

(1)

(2)

T

(°C)

amb

2

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

thermal resistance from
junction to ambient

thermal resistance from

in free air

[1]

- - 568 K/W

[2]

- - 500 K/W

- - 230 K/W

junction to solder point

Per device

R

th(j-a)

thermal resistance from

in free air

junction to ambient

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[1]

- - 416 K/W

[2]

- - 313 K/W

BC847BPN_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 February 2009 3 of 14

NXP Semiconductors

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

006aab420

2

10

tp (s)

3

10

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

0.20

0.05

0.01
0

0.33

0.10

0.02

−4

10

−3

10

−2

−1

10

1

1010

2

10

10

1

−5

10

FR4 PCB, standard footprint

Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab421

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

2

10

10

0.33

0.20

0.10

0.05

0.02

0.01
0

1

−5

10

−4

10

−3

10

FR4 PCB, mounting pad for collector 1 cm

−2

2

−1

10

1

1010

2

10

tp (s)

3

10

Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

BC847BPN_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 February 2009 4 of 14

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

BC847BPN

45 V, 100 mA NPN/PNP general-purpose transistor

=25°C unless otherwise specified.

collector-basecut-off
current

emitter-base cut-off
current

DC current gain VCE=5V; IC= 2 mA 200 - 450
collector-emitter

saturation voltage
base-emitter

saturation voltage
base-emitter voltage IC= 2 mA; VCE=5V

TR1 (NPN) 580 655 700 mV
TR2 (PNP) 600 655 750 mV

collector capacitance IE=ie= 0 A; VCB=10V;

TR1 (NPN) - - 1.5 pF
TR2 (PNP) - - 2.2 pF

emitter capacitance IC=ic= 0 A; VEB= 0.5 V;

TR1 (NPN) - 11 - pF
TR2 (PNP) - 10 - pF

transition frequency IC= 10 mA; VCE=5V;

VCB=30V; IE=0A --15nA

=30V; IE=0A;

V

CB

T

= 150 °C

j

--5µA

VEB=5V; IC= 0 A - - 100 nA

IC= 10 mA; IB= 0.5 mA - - 100 mV

= 100 mA; IB=5mA

I

C

[1]

- - 300 mV

IC= 10 mA; IB= 0.5 mA - 755 - mV

f=1MHz

f=1MHz

100 - - MHz

f = 100 MHz

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

BC847BPN_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 18 February 2009 5 of 14