BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Rev. 04 — 18 February 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
n Low collector capacitance
n Low collector-emitter saturation voltage
n Closely matched current gain
n Reduces number of components and board space
n No mutual interference between the transistors
1.3 Applications
n General-purpose switching and amplification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
V
I
h
CEO
C
FE
collector-emitter voltage open base - - 45 V
collector current - - 100 mA
DC current gain VCE=5V; IC= 2 mA 200 - 450
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
132
6
5
2
sym019
4
TR2
3
56
4
TR1
1
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
BC847BPN SC-88 plastic surface-mounted package; 6 leads SOT363
4. Marking
Table 4. Marking codes
Type number Marking code
BC847BPN 13*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
Name Description Version
[1]
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 45 V
emitter-base voltage open collector - 5 V
collector current - 100 mA
peak collector current single pulse;
t
≤ 1ms
p
peak base current single pulse;
t
≤ 1ms
p
total power dissipation T
total power dissipation T
amb
amb
≤ 25 °C
≤ 25 °C
- 200 mA
- 200 mA
[1]
- 220 mW
[2]
- 250 mW
[1]
- 300 mW
[2]
- 400 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 2 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves SOT363 (SC-88)
6. Thermal characteristics
500
P
tot
(mW)
400
300
200
100
0
−75 17512525 75−25
006aab419
(1)
(2)
T
(°C)
amb
2
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
in free air
[1]
- - 568 K/W
[2]
- - 500 K/W
- - 230 K/W
junction to solder point
Per device
R
th(j-a)
thermal resistance from
in free air
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[1]
- - 416 K/W
[2]
- - 313 K/W
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 3 of 14
NXP Semiconductors
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
006aab420
2
10
tp (s)
3
10
Z
th(j-a)
(K/W)
3
10
δ = 1
0.75
0.50
0.20
0.05
0.01
0
0.33
0.10
0.02
−4
10
−3
10
−2
−1
10
1
1010
2
10
10
1
−5
10
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
Z
th(j-a)
(K/W)
3
10
δ = 1
0.75
0.50
2
10
10
0.33
0.20
0.10
0.05
0.02
0.01
0
1
−5
10
−4
10
−3
10
FR4 PCB, mounting pad for collector 1 cm
−2
2
−1
10
1
1010
2
10
tp (s)
3
10
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 4 of 14
NXP Semiconductors
7. Characteristics
Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
BC847BPN
45 V, 100 mA NPN/PNP general-purpose transistor
=25°C unless otherwise specified.
collector-basecut-off
current
emitter-base cut-off
current
DC current gain VCE=5V; IC= 2 mA 200 - 450
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage IC= 2 mA; VCE=5V
TR1 (NPN) 580 655 700 mV
TR2 (PNP) 600 655 750 mV
collector capacitance IE=ie= 0 A; VCB=10V;
TR1 (NPN) - - 1.5 pF
TR2 (PNP) - - 2.2 pF
emitter capacitance IC=ic= 0 A; VEB= 0.5 V;
TR1 (NPN) - 11 - pF
TR2 (PNP) - 10 - pF
transition frequency IC= 10 mA; VCE=5V;
VCB=30V; IE=0A --15nA
=30V; IE=0A;
V
CB
T
= 150 °C
j
--5µA
VEB=5V; IC= 0 A - - 100 nA
IC= 10 mA; IB= 0.5 mA - - 100 mV
= 100 mA; IB=5mA
I
C
[1]
- - 300 mV
IC= 10 mA; IB= 0.5 mA - 755 - mV
f=1MHz
f=1MHz
100 - - MHz
f = 100 MHz
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
BC847BPN_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 February 2009 5 of 14
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