NXP BC546A, BC546B, BC846A, BC846AT, BC846AW Schematic [ru]
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BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
BC846 SOT23 - TO-236AB BC856
BC846W SOT323 SC-70 - BC856W
BC846T SOT416 SC-75 - BC856T
BC546A
BC546B
[1]
Package PNP
NXP JEITA JEDEC
[2]
[2]
SOT54 SC-43A TO-92 BC556A
SOT54 SC-43A TO-92 BC556B
complement
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2
).
1.2 Features
General-purpose transistors
SMD plastic packages
Two different gain selections
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
h
CEO
C
FE
collector-emitter voltage open base - - 65 V
collector current - - 100 mA
DC current gain VCE=5V;
IC=2mA
group A 110 180 220
h
FE
group B 200 290 450
h
FE
110 - 450
NXP Semiconductors
4
1
7
6
8
6
7
6
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT23; SOT323; SOT416
1base
2emitter
3 collector
BC846/BC546 series
65 V, 100 mA NPN general-purpose transist ors
3
3
1
SOT54
1emitter
2base
3 collector
SOT54A
1emitter
2base
3 collector
SOT54 variant
1emitter
2base
3 collector
12
006aaa14
1
2
3
001aab34
1
2
3
001aab34
1
2
3
001aab44
2
sym02
3
2
1
sym02
3
2
1
sym02
3
2
1
sym02
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 2 of 14
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number
BC846 - plastic surface mounted package; 3 leads SOT23
BC846W SC-70 plastic surface mounted package; 3 leads SOT323
BC846T SC-75 plastic surface mounted package; 3 leads SOT416
BC546A
BC546B
[1] Valid for all available selection groups.
[2] Also available in SOT54 and SOT54 variant packages (see Section 2
[2]
[2]
4. Marking
BC846/BC546 series
65 V, 100 mA NPN general-purpose transist ors
[1]
Package
Name Description Version
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SC-43A plastic single-ended leaded (through hole) package;
3 leads
and Section 9).
SOT54
SOT54
Table 5. Marking codes
Type number Marking code
[1]
Ty pe number Marking code
BC846 1D* BC846T 1M
BC846A 1A* BC846AT 1A
BC846B 1B* BC846BT 1B
BC846W 1D* BC546A C546A
BC846AW 1A* BC546B C546B
BC846BW 1B* - -
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 3 of 14
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BC846/BC546 series
65 V, 100 mA NPN general-purpose transist ors
collector-base voltage op en emitter - 80 V
collector-emitter voltage open base - 65 V
emitter-base voltage open collector - 6 V
collector current - 100 mA
peak collector current single pulse;
≤ 1ms
t
p
peak base current single pulse;
≤ 1ms
t
p
total power dissipation T
amb
≤ 25 °C
SOT23 - 250 mW
SOT323 - 200 mW
SOT416 - 150 mW
SOT54 - 500 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
-200mA
-200mA
[1]
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
thermal resistance from
junction to ambient
SOT23 - - 500 K/W
SOT323 - - 625 K/W
SOT416 - - 833 K/W
SOT54 - - 250 K/W
in free air
[1]
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 4 of 14
NXP Semiconductors
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
f
T
C
c
C
e
NF noise figure I
65 V, 100 mA NPN general-purpose transist ors
=25°C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
group A VCE=5V; IC=10μA-180-
h
FE
group B VCE=5V; IC=10μA-290-
h
FE
DC current gain V
group A VCE=5V; IC= 2 mA 110 180 220
h
FE
group B VCE=5V; IC= 2 mA 200 290 450
h
FE
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage IC=2mA; VCE=5V
transition frequency VCE=5V; IC=10mA;
collector capacitance VCB=10V; IE=ie=0A;
emitter capacitance VEB=0.5V; IC=ic=0A;
VCB=30V; IE=0A - - 15 nA
=30V; IE=0A;
V
CB
= 150 °C
T
j
VEB=5V; IE= 0 A - - 100 nA
=5V; IC= 2 mA 110 - 450
CE
IC=10mA; IB= 0.5 mA - 90 200 mV
= 100 mA; IB=5mA
I
C
IC=10mA; IB=0.5mA
= 100 mA; IB=5mA
I
C
=10mA; VCE=5V
I
C
f = 100 MHz
f=1MHz
f=1MHz
= 200 μA; VCE=5V;
C
=2kΩ; f = 1 kHz;
R
S
B=200Hz
BC846/BC546 series
--5μA
[1]
- 200 400 mV
[2]
-760-mV
[2]
-900-mV
[3]
580 660 700 mV
[3]
- - 770 mV
100 - - MHz
-23pF
-11- pF
- 2 10 dB
[1] Pulse test: tp≤ 300 μs; δ≤0.02.
[2] V
[3] V
BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 17 November 2009 5 of 14
decreases by approximately 1.7 mV/K with increasing temperature.
BEsat
decreases by approximately 2 mV/K with increasing temperature.
BE
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