NXP BC 846B NXP Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

BC846; BC847; BC848

NPN general purpose transistors

Product specification
Supersedes data of 1999 Apr 23

2002 Feb 04

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package.
PNP complements: BC856, BC857 and BC858.

MARKING

TYPE NUMBER MARKING CODE

BC846 1D*
BC846A 1A*
BC846B 1B*
BC847 1H*
BC847A 1E*
BC847B 1F*
BC847C 1G*
BC848B 1K*

(1)

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

Top view

3

1

21

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

3

2

Note

1. * = p: made in Hong Kong.
* = t: made in Malaysia.

2002 Feb 04 2

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter

BC846 − 80 V
BC847 − 50 V
BC848 − 30 V

collector-emitter voltage open base

BC846 − 65 V
BC847 − 45 V
BC848 − 30 V

emitter-base voltage open collector

BC846; BC847 − 6V

BC848 − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to

in free air; note 1 500 K/W

ambient

Note

1. Transistor mounted on an FR4 printed-circuit board, standard footprint.

2002 Feb 04 3

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

CHARACTERISTICS

T

=25°C; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

f

T

F noise figure I

collector-base cut-off current VCB=30V; IE=0 −−15 nA

V

=30V; IE=0;

CB

T

= 150 °C

j

−−5µA

emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain IC=10µA; VCE=5V

BC846A; BC847A − 90 −

BC846B; BC847B; BC848B − 150 −

BC847C − 270 −
DC current gain I

= 2 mA; VCE=5V

C

BC846 110 − 450

BC847 110 − 800

BC846A; BC847A 110 180 220

BC846B; BC847B; BC848B 200 290 450

BC847C 420 520 800
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 90 250 mV

I

= 100 mA; IB= 5 mA;

C

− 200 600 mV

note 1

base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 700 − mV

I

= 100 mA; IB= 5 mA;

C

− 900 − mV

note 1

base-emitter voltage IC= 2 mA; VCE= 5 V 580 660 700 mV

I

= 10 mA; VCE=5V −−770 mV

C

collector capacitance VCB=10V; IE=Ie=0;

− 2.5 − pF

f = 1 MHz

transition frequency VCE=5V; IC=10mA;

100 −−MHz

f = 100 MHz

= 200 µA; VCE=5V;

C

− 210dB
RS=2kΩ; f = 1 kHz;
B = 200 Hz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2002 Feb 04 4

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

400

handbook, halfpage

h

FE

300

200

(1)

(2)

(3)

MGT723

100

0

−1

10

11010

2103

IC (mA)

BC846A; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150°C.
=25°C.
= −55 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

1200

handbook, halfpage

V

BE

(mV)

1000

800

(1)

(2)

600

400

(3)

200

0

−1

10

11010

2103

BC846A; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

MGT724

IC (mA)

3

10

handbook, halfpage

V

CEsat
(mV)

2

10

10

−1

10

(1)
(2)

(3)

11010

MGT725

2103

IC (mA)

BC846A; IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

1200

handbook, halfpage

V

BEsat
(mV)

1000

(1)

800

(2)

600

(3)

400

200

0

−1

10

11010

2103

BC846A; IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

MGT726

IC (mA)

2002 Feb 04 5

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

600

handbook, halfpage

h

FE

500

(1)

MGT727

400

(2)

300

200

100

0

−1

10

11010

(3)

2103

IC (mA)

BC847B; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.6 DC current gain as a function of collector

current; typical values.

1200

handbook, halfpage

V

BE

(mV)

1000

800

(1)

(2)

600

400

(3)

200

0

−2

10

−1

10

11010

BC847B; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

MGT728

2103

IC (mA)

4

10

handbook, halfpage

V

CEsat

(mV)

3

10

2

10

10

−1

10

(1)

(2)

(3)

11010

MGT729

2103

IC (mA)

BC847B; IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

1200

handbook, halfpage

V

BEsat
(mV)

1000

(1)

800

(2)

600

(3)

400

200

0

−1

10

11010

2103

BC847B; IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

MGT730

IC (mA)

2002 Feb 04 6

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

1200

handbook, halfpage

h

FE

1000

(1)

MGT731

800

600

400

(2)

(3)

200

0

−1

10

11010

2103

IC (mA)

BC847C; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.10 DC current gain as a function of collector

current; typical values.

1200

handbook, halfpage

V

BE

(mV)

1000

800

(1)

(2)

600

400

(3)

200

0

−2

10

−1

10

11010

BC847C; VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

MGT732

2103

IC (mA)

4

10

handbook, halfpage

V

CEsat

(mV)

3

10

2

10

10

−1

10

(1)

(2)(3)

11010

MGT733

2103

IC (mA)

BC847C; IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

1200

handbook, halfpage

V

BEsat
(mV)

1000

800

(1)

(2)

600

(3)

400

200

0

−1

10

11010

2103

BC847C; IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

MGT734

IC (mA)

2002 Feb 04 7

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

cD

p

0.48

0.15

3.0

0.38

0.09

IEC JEDEC EIAJ

2.8

1.4

1.2

e

E

1.9

REFERENCES

0.95

e

1

UNIT

A

max.

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

2002 Feb 04 8

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2002 Feb 04 9

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

NOTES

2002 Feb 04 10

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847; BC848

NOTES

2002 Feb 04 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
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under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/04/pp12 Date of release: 2002 Feb 04 Document order number: 9397 750 09165

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