NXP BC817DS Datasheet

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DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D302

BC817DS

NPN general purpose double
transistor

Product data sheet
Supersedes data of 2002 Aug 09

2002 Nov 22

NXP Semiconductors Product data sheet

Top view

NPN general purpose double transistor BC817DS

FEATURES

• High current (500 mA)

• 600 mW total power dissipation

• Replaces two SOT23 packaged transistors on same

PCB

area.

APPLICATIONS

• General purpose switching and amplification

• Push-pull amplifiers

• Multi-phase stepper motor drivers.

DESCRIPTION

NPN transistor pair in a SOT457 (SC-74) plastic package.

MARKING

T YPE NUMBER MARKING CODE

BC817DS N3

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V
I
I

CEO
C
CM

collector-emitter voltage 45 V
collector current (DC) 500 mA
peak collector current 1 A

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

handbook, halfpage

132

56

4

MAM340

645

TR2

TR1

132

Fig.1 Simplified outline (SOT457) and symbol.

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor unless otherwise specified

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5 V
collector current (DC) − 500 mA
peak collector current − 1 A
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 370 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Per device

P

tot

total power dissipation T

≤ 25 °C; note 1 − 600 mW

amb

Note

1. Device mounted on a printed-circuit board; single sided copper ; tinplated; mounting pad for collector 1 cm2.

2002 Nov 22 2

NXP Semiconductors Product data sheet

NPN general purpose double transistor BC817DS

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Device mounted on a printed-circuit board; single sided copper ; tinplated; mounting pad for collector 1 cm2.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor

I

CBO

I

EBO

h

FE

V

CEsat

V

BE

C

c

f

T

thermal resistance from junct ion to

note 1 208 K/W

ambient

collector-base cut-off curren t VCB = 20 V; IE = 0 − − 100 nA

VCB = 20 V; IE = 0; Tj = 150 °C − − 5 μA
emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA
DC current gain VCE = 1 V; IC = 100 mA; note 1 160 − 400

VCE = 1 V; IC = 500 mA; note 1 40 − −
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 700 mV
base-emitter voltage VCE = 1 V; IC = 500 mA;

notes

1 and 2

− − 1.2 V

collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 5 − pF
transition frequency VCE = 5 V; IC = 10 mA;

= 100 MHz

f

100 − − MHz

Notes

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

2. VBE decreases by approximately −2 mV/K with increasing temperature.

2002 Nov 22 3

NXP Semiconductors Product data sheet

NPN general purpose double transistor BC817DS

500

handbook, halfpage

h

FE
400

(1)

MBL747

300

(2)

200

(3)

100

0

−1

10

11010

2

IC (mA)

VCE = 1 V.
(1) T

= 150 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= −55 °C.

amb

Fig.2 DC current gain as a function of collector

current; typical values.

1000

handbook, halfpage

I

C

(1) (2) (3) (4) (5)

MBL748

(mA)

800

600

400

(6)
(7)

(8)
(9)

(10)

200

3

10

0

010

(1) IB = 15 mA.
(2) IB = 13.5 mA.
(3) IB = 12 mA.
(4) IB = 10.5 mA.

2468

(5) IB = 9 mA.
(6) IB = 7.5 mA.

VCE (V)

(9) IB = 3 mA.

(10) IB = 1.5 mA.
(7) IB = 6 mA.
(8) IB = 4.5 mA.

Fig.3 Collector current as a function of

collector-emitter voltage; typical values.

3

10

handbook, halfpage

V

CEsat

MBL749

(mV)

2

10

(1)

(2)
(3)

10

−1

10

110

10

2

IC (mA)

IC/IB = 10.
(1) T

= 150 °C.

amb

= 25 °C.

(2) T

amb

(3) T

= −55 °C.

amb

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

1200

handbook, halfpage

V

BE

MBL750

(mV)

1000

(1)

800

(2)

600

(3)

400

3

10

200

−1

10

110

10

2

IC (mA)

3

10

VCE = 1 V.
(1) T

= −55 °C.

amb

= 25 °C.

(2) T

amb

(3) T

= 150 °C.

amb

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

2002 Nov 22 4

NXP Semiconductors Product data sheet

7

NPN general purpose double transistor BC817DS

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT45

D

E

AB

X

y

56

pin 1
index

4

A

A

1

132

e

b

p

wBM

H

E

detail X

v M

A

Q

c

L

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.013

0.9

OUTLINE
VERSION

SOT457 SC-74

0.1

b

cD

p

1

0.40

0.26

0.25

0.10

IEC JEDEC EIAJ

3.1

2.7

E

1.7

1.3

REFERENCES

e

0.95

H

3.0

2.5

E

L

0.6

0.2

Qywv

p

0.33

0.23

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
01-05-04

2002 Nov 22 5

NXP Semiconductors Product data sheet

NPN general purpose double transistor BC817DS

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or comple ting a design.

2. The product status of device(s) desc ribed in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT

STATUS

(2)

development.

DEFINITION

System of IEC
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

60134) may cause permanent damage to

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings

2002 Nov 22 6

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.

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© NXP B.V. 2009
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The information presented in this documen t d oes not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands 613514/02/pp7 Date of release: 2002 Nov 22 Document order number: 9397 750 10582