BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 06 — 17 November 2009 Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1. Product overview
Type number Package PNP complement
BC817 SOT23 - BC807
BC817W SOT323 SC-70 BC807W
BC337
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NXP JEITA
[1]
SOT54 (TO-92) SC-43A BC327
1.2 Features
High current
Low voltage
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
I
h
C
CM
FE
CEO
collector-emitter voltage open base;
IC=10mA
collector current (DC) - - 500 mA
peak collector current - - 1 A
DC current gain IC = 100 mA;
=1V
V
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W; BC337-16 100 - 250
BC817-25; BC817-25W; BC337-25 160 - 400
BC817-40; BC817-40W; BC337-40 250 - 600
CE
--45V
[1]
---
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors
1
o
1
7
6
8
6
7
6
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT23
1base
2emitter
3 collector
SOT323
1base
2emitter
3 collector
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
3
12
3
12
sot323_s
3
1
2
sym02
3
1
2
sym02
SOT54
1emitter
2base
3 collector
SOT54A
1emitter
2base
3 collector
SOT54 variant
1emitter
2base
3 collector
001aab34
001aab34
001aab44
3
1
2
3
1
2
3
1
2
3
2
1
sym02
3
2
1
sym02
3
2
1
sym02
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 2 of 19
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number
BC817 - plastic surface mounte d package; 3 leads SOT23
BC817W SC-70 plastic surface mounted package; 3 leads SOT323
[2]
BC337
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2
4. Marking
Table 5. Marking codes
Type number Marking code
BC817 6D*
BC817-16 6A*
BC817-25 6B*
BC817-40 6C*
BC817W 6D*
BC817-16W 6A*
BC817-25W 6B*
BC817-40W 6C*
BC337 C337
BC337-16 C33716
BC337-25 C33725
BC337-40 C33740
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
[1]
Package
Name Description Version
SC-43A plastic single-ended leaded (through hole) package;
3 leads
and Section 9).
[1]
SOT54
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 3 of 19
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
collector-base voltage open emitter - 50 V
collector-emitter voltage open base;
=10mA
I
C
emitter-base voltage open collector - 5 V
collector current (DC) - 500 mA
peak collector current - 1 A
peak base current - 200 mA
total power dissipation
BC817 T
BC817W T
BC337 T
amb
amb
amb
≤ 25 °C
≤ 25 °C
≤ 25 °C
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
-45V
[1][2]
-250mW
[1][2]
-200mW
[1][2]
-625mW
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
thermal resistance from
junction to ambient
BC817 T
BC817W T
BC337 T
amb
amb
amb
≤ 25 °C
≤ 25 °C
≤ 25 °C
[1][2]
- - 500 K/W
[1][2]
- - 625 K/W
[1][2]
- - 200 K/W
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 4 of 19
NXP Semiconductors
7. Characteristics
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Table 8. Characteristics
T
= 25 °C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
FE
collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA
= 0 A; VCB = 20 V;
I
E
=150°C
T
j
--5μA
emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA
DC current gain IC = 100 mA; VCE = 1 V
[1]
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W;
100 - 250
BC337-16
BC817-25; BC817-25W;
160 - 400
BC337-25
BC817-40; BC817-40W;
250 - 600
BC337-40
h
V
FE
CEsat
DC current gain IC = 500 mA; VCE = 1 V
collector-emitter saturation
IC = 500 mA; IB = 50 mA
[1]
40 - -
[1]
--700mV
voltage
V
BE
C
c
base-emitter voltage IC = 500 mA; VCE = 1 V
collector capacitance IE = ie = 0 A; VCB = 10 V;
[2]
--1.2V
-3-pF
f=1MHz
f
T
transition frequency IC = 10 mA; VCE = 5 V;
100 - - MHz
f=100MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] V
decreases by approximately 2 mV/K with increasing temperature.
BE
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 5 of 19
NXP Semiconductors
006aaa131
006aaa132
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
400
h
FE
300
200
100
0
−1
10
(1)
(2)
(3)
110
(mA)
3
10
2
10
I
C
VCE = 1 V
(1) T
(2) T
(3) T
= 150 °C
amb
= 25 °C
amb
= −55 °C
amb
Fig 1. Selection -16: DC curren t ga in as a function of
collector current; typical values
800
600
h
FE
400
200
0
10
(1) T
(2) T
(3) T
−1
= 1 V
V
CE
amb
amb
amb
(1)
(2)
(3)
110
= 150 °C
= 25 °C
= −55 °C
(mA)
3
10
2
10
I
C
Fig 2. Selection -25: DC current gain as a function of
collector current; typical values
006aaa133
h
FE
(1)
(2)
(3)
110
(mA)
3
10
2
10
I
C
(1) T
(2) T
(3) T
VCE = 1 V
= 150 °C
amb
= 25 °C
amb
= −55 °C
amb
600
400
200
0
−1
10
Fig 3. Selection -40: DC current gain as a function of collector current; typical values
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 6 of 19
NXP Semiconductors
006aaa134
006aaa135
006aaa136
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
10
V
BEsat
(V)
1
−1
10
−1
10
(1)
(2)
(3)
110
10
2
IC (mA)
3
10
IC/IB = 10
(1) T
(2) T
(3) T
= −55 °C
amb
= 25 °C
amb
= 150 °C
amb
Fig 4. Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
10
V
BEsat
(V)
1
−1
10
10
(1) T
(2) T
(3) T
−1
I
C/IB
amb
amb
amb
(1)
(2)
(3)
110
= 10
= −55 °C
= 25 °C
= 150 °C
10
2
IC (mA)
3
10
Fig 5. Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
10
V
BEsat
(V)
(1) T
(2) T
(3) T
IC/IB = 10
= −55 °C
amb
= 25 °C
amb
= 150 °C
amb
1
−1
10
−1
10
(1)
(2)
(3)
110
10
2
IC (mA)
3
10
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 7 of 19
NXP Semiconductors
006aaa137
006aaa138
006aaa139
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
1
V
CEsat
(V)
−1
10
(2)
(1)
(3)
−2
10
−1
10
110
10
2
IC (mA)
3
10
IC/IB = 10
(1) T
(2) T
(3) T
= 150 °C
amb
= 25 °C
amb
= −55 °C
amb
Fig 7. Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
1
V
CEsat
(V)
−1
10
(1)
−2
10
−3
10
10
(1) T
(2) T
(3) T
−1
I
C/IB
amb
amb
amb
110
= 10
= 150 °C
= 25 °C
= −55 °C
(2)
(3)
10
2
IC (mA)
3
10
Fig 8. Selection -25: Collector-emitter saturation
voltage as a function of col le ctor current;
typical values
1
V
CEsat
(V)
−1
10
(1)
(2)
(3)
10
2
IC (mA)
3
10
(1) T
(2) T
(3) T
IC/IB = 10
= 150 °C
amb
= 25 °C
amb
= −55 °C
amb
−2
10
−3
10
−1
10
110
Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 8 of 19
NXP Semiconductors
006aaa140
006aaa141
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
1.2
I
C
(A)
0.8
0.4
0
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(10) I
054231
T
= 25 °C
amb
= 16.0 mA
B
= 14.4 mA
B
= 12.8 mA
B
= 11.2 mA
B
= 9.6 mA
B
= 8.0 mA
B
= 6.4 mA
B
= 4.8 mA
B
= 3.2 mA
B
= 1.6 mA
B
(5)
(3)(4)
(1)(2)
(6)
(7)
(8)
(9)
(10)
VCE (V)
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
1.2
I
C
(A)
0.8
0.4
0
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(10) I
054231
= 25 °C
T
amb
= 13.0 mA
B
= 11.7 mA
B
= 10.4 mA
B
= 9.1 mA
B
= 7.8 mA
B
= 6.5 mA
B
= 5.2 mA
B
= 3.9 mA
B
= 2.6 mA
B
= 1.3 mA
B
(5)(6)
(3)(4)
(1)(2)
(7)
(8)
(9)
(10)
VCE (V)
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 9 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
(3)(4)
006aaa142
(1)(2)
(7)
(8)
(9)
(10)
VCE (V)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
(10) I
T
= 25 °C
amb
= 12.0 mA
B
= 10.8 mA
B
= 9.6 mA
B
= 8.4 mA
B
= 7.2 mA
B
= 6.0 mA
B
= 4.8 mA
B
= 3.6 mA
B
= 2.4 mA
B
= 1.2 mA
B
I
(A)
1.2
C
0.8
0.4
0
054231
(5)(6)
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 10 of 19
NXP Semiconductors
3
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
8. Package outline
Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.09
3.0
2.8
0.38
IEC JEDEC JEITA
E
1.4
1.9
1.2
REFERENCES
e
e
H
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
0.95
1
2.5
2.1
Fig 13. Package outline SOT23 (TO-236AB)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 11 of 19
NXP Semiconductors
3
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Plastic surface-mounted package; 3 leads SOT32
D
y
3
A
12
e
b
1
p
e
w M
B
E
H
E
A
1
detail X
AB
Q
c
L
p
X
v M
A
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.8
OUTLINE
VERSION
SOT323 SC-70
max
0.1
b
cD
p
0.4
0.25
0.10
2.2
1.8
0.3
IEC JEDEC JEITA
E
1.35
1.3
1.15
REFERENCES
e
0.65
e1HEL
2.2
2.0
0.45
0.15
Qwv
p
0.23
0.13
0.20.2
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 14. Package outline SOT323 (SC-70)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 12 of 19
NXP Semiconductors
4
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads SOT5
c
E
d
A L
1
D
2
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43A
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max.
2.5
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
04-06-28
04-11-16
Fig 15. Package outline SOT54 (SC-43A/TO-92)
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 13 of 19
NXP Semiconductors
A
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54
c
E
d
A
L
2
L
1
D
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
mm
OUTLINE
VERSION
SOT54A
A
5.2
5.0
b
0.48
0.40
2
3
b
1
0 2.5 5 mm
b
c
D
d
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
E
1.7
4.2
1.4
3.6
REFERENCES
5.08
e
scale
e
2.54
L
1
(1)
L
1
L
1
14.5
12.7
max.
3
L
2
3
2
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
97-05-13
04-06-28
Fig 16. Package outline SOT54A
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 14 of 19
NXP Semiconductors
nt
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 varia
c
e
1
L
2
E
d
A L
1
2
D
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 variant
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max
2.5 2.5
L
max
2
EUROPEAN
PROJECTION
b
e
1
e
ISSUE DATE
04-06-28
05-01-10
Fig 17. Package outline SOT54 variant
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 15 of 19
NXP Semiconductors
9. Packing information
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BC817 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
BC817W SOT 323 4 mm pitch, 8 mm tape and reel -115 - -135
BC337 SOT54 bulk, straight leads - -412 BC337 SOT54A tape and reel, wide pitch - - -116
BC337 SOT54A tape ammopack, wide pitch - - -126
BC337 SOT 54 variant bulk, delta pinning (on-circle) - -112 -
[1] For further information and the availability of packing methods, see Section 12.
[1]
3000 5000 10000
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 16 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC817_BC817W_
BC337_6
Modifications:
BC817_BC817W_
BC337_5
BC817_4 20040105 Product specification - BC817_3
BC817W_SER_4 20040225 Product specification - BC817W_SER_3
BC337_3 19990415 Product specification - BC337_338_CNV_2
20091117 Product data sheet - BC817_BC817W_
BC337_5
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Table 3 “Pinning”: updated
• Figure 13 “Package outline SOT23 (TO-236AB)”: updated
• Figure 14 “Package outline SOT323 (SC-70)”: updated
20050121 Product data sheet CPCN200302007F1 BC817_4;
BC817W_SER_4;
BC337_3
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 17 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
11. Legal information
11.1 Data sheet status
Document status
Objective [short] data sheet Development This document cont ains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.
, including those pertaining to warranty,
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 18 of 19
NXP Semiconductors
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information . . . . . . . . . . . . . . . . . . . . 16
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
12 Contact information. . . . . . . . . . . . . . . . . . . . . 18
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BC817_BC817W_BC337_6
Date of release: 17 November 2009
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