NXP BC807DS Datasheet

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DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D302

BC807DS

PNP general purpose double
transistor

Product data sheet
Supersedes data of 2002 Aug 09

2002 Nov 22

NXP Semiconductors Product data sheet

PNP general purpose double transistor BC807DS

FEATURES

• High current (500 mA)

• 600 mW total power dissipation

• Replaces two SOT23 packaged transistors on same

PCB area.

APPLICATIONS

• General purpose switching and amplification

• Push-pull amplifiers

• Multi-phase stepper motor drivers.

DESCRIPTION

PNP transistor pair in a SOT457 (SC-74) plastic package.

MARKING

T YPE NUMBER MARKING CODE

BC807DS N2

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V
I
I

CEO
C
CM

collector-emitter voltage −45 V
collector current (DC) −500 mA
peak collector current −1 A

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

654

123

Top view

MAM457

645

TR2

TR1

132

Fig.1 Simplified outline (SOT457) and symbol.

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor unless otherwise specified

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − −50 V
collector-emitter voltage open base − −45 V
emitter-base voltage open collector − −5 V
collector current (DC) − −500 mA
peak collector current − −1 A
peak base current − −200 mA
total power dissipation T

≤ 25 °C; note 1 − 370 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Per device

P

tot

total power dissipation T

≤ 25 °C; note 1 − 600 mW

amb

Note

1. Device mounted on a printed-circuit board; single sided copper ; tinplated; mounting pad for collector 1 cm2.

2002 Nov 22 2