NXP BC 807-40W SMD Datasheet

BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 05 — 21 February 2005 Product data sheet
1. Product profile

1.1 General description

PNP general-purpose transistors.
Table 1: Product overview
Type number Package NPN complement
BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327
[1] Also available in SOT54A and SOT54 variant packages (seeSection 2).

1.2 Features

Philips JEITA
[1]
SOT54 (TO-92) SC-43A BC337
High current
Low voltage

1.3 Applications

1.4 Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
I
CM
h
FE
[1] Pulse test: tp≤ 300 µs; δ≤ 0.02.
collector-emitter voltage open base;
collector current (DC) - - 500 mA peak collector current - - 1A DC current gain IC= 100 mA;
BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600
I
=10mA
C
V
= 1V
CE
--−45 V
[1]
Philips Semiconductors

2. Pinning information

Table 3: Pinning
Pin Description Simplified outline Symbol
SOT23
1 base 2 emitter 3 collector
SOT323
1 base 2 emitter 3 collector
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
3
12
3
3
1
2
sym013
3
1
SOT54
1 emitter 2 base 3 collector
SOT54A
1 emitter 2 base 3 collector
SOT54 variant
1 emitter 2 base 3 collector
12
sot323_so
1 2 3
001aab347
1 2 3
001aab348
1 2 3
001aab447
2
sym013
3
2
1
006aaa149
3
2
1
006aaa149
3
2
1
006aaa149
9397 750 14023 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 February 2005 2 of 19
Philips Semiconductors

3. Ordering information

Table 4: Ordering information
Type number
BC807 - plastic surface mounted package; 3 leads SOT23 BC807W SC-70 plastic surface mounted package; 3 leads SOT323
[2]
BC327
[1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (seeSection 2 and Section 9).

4. Marking

Table 5: Marking codes
Type number Marking code
BC807 5D* BC807-16 5A* BC807-25 5B* BC807-40 5C* BC807W 5D* BC807-16W 5A* BC807-25W 5B* BC807-40W 5C* BC327 C327 BC327-16 C32716 BC327-25 C32725 BC327-40 C32740
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
[1]
Package Name Description Version
SC-43A plastic single-ended leaded (through hole) package;
3 leads
[1]
SOT54
[1] * = -: made in Hong Kong
* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
9397 750 14023 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 February 2005 3 of 19
Philips Semiconductors

5. Limiting values

Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
collector-base voltage open emitter - 50 V collector-emitter voltage open base;
I
=10mA
C
emitter-base voltage open collector - 5V collector current (DC) - 500 mA peak collector current - 1A peak base current - 200 mA total power dissipation
BC807 T BC807W T BC327 T
amb amb amb
25 °C 25 °C 25 °C
storage temperature 65 +150 °C junction temperature - 150 °C ambient temperature 65 +150 °C
- 45 V
[1] [2]
- 250 mW
[1] [2]
- 200 mW
[1] [2]
- 625 mW

6. Thermal characteristics

Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.
thermal resistance from junction to ambient
BC807 T BC807W T BC327 T
amb amb amb
25 °C 25 °C 25 °C
[1] [2]
- - 500 K/W
[1] [2]
- - 625 K/W
[1] [2]
- - 200 K/W
9397 750 14023 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 February 2005 4 of 19
Philips Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors

7. Characteristics

Table 8: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
h V
V C
f
T
FE
FE
CEsat
BE c
collector-base cut-off current IE = 0 A; VCB = 20 V - - 100 nA
= 0 A; VCB = 20 V;
I
E
T
= 150 °C
j
--−5 µA
emitter-base cut-off current IC = 0 A; VEB = 5 V - - 100 nA DC current gain IC = 100 mA; VCE = 1 V
[1]
BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W;
100 - 250
BC327-16 BC807-25; BC807-25W;
160 - 400
BC327-25 BC807-40; BC807-40W;
250 - 600
BC327-40 DC current gain IC = 500 mA; VCE = 1 V collector-emitter saturation
IC = 500 mA; IB = 50 mA
[1]
40 - -
[1]
--−700 mV
voltage base-emitter voltage IC = 500 mA; VCE = 1 V collector capacitance IE = ie = 0 A; VCB = 10 V;
[2]
--−1.2 V
-5- pF
f=1MHz
transition frequency IC = 10 mA; VCE = 5 V;
80 - - MHz
f = 100 MHz
[1] Pulse test: tp≤ 300 µs; δ≤ 0.02. [2] VBE decreases by approximately 2 mV/K with increasing temperature.
9397 750 14023 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 February 2005 5 of 19
Philips Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
10
006aaa119
2
I
(mA)
C
10
3
300
h
FE
200
100
0
1
10
(1)
(2)
(3)
1 10
VCE = 1 V. (1) T (2) T (3) T
= 150 °C.
amb
= 25 °C.
amb
= 55 °C.
amb
Fig 1. Selection -16: DC current gain as a function of
collector current; typical values.
10
006aaa120
2
I
(mA)
C
10
3
600
h
FE
400
200
0
10
1
(1)
(2)
(3)
1 10
VCE = 1 V. (1) T (2) T (3) T
= 150 °C.
amb
= 25 °C.
amb
= 55 °C.
amb
Fig 2. Selection -25: DC current gain as a function of
collector current; typical values.
10
006aaa121
2
I
(mA)
C
10
3
800
h
FE
600
400
200
0
10
1
(1)
(2)
(3)
1 10
VCE = 1 V. (1) T (2) T (3) T
= 150 °C.
amb
= 25 °C.
amb
= 55 °C.
amb
Fig 3. Selection -40: DC current gain as a function of collector current; typical values.
9397 750 14023 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 05 — 21 February 2005 6 of 19
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