NXP BC 807-40W SMD Datasheet

Download

Page 1

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Rev. 05 — 21 February 2005 Product data sheet

1. Product proﬁle

1.1 General description

PNP general-purpose transistors.

Table 1: Product overview

Type number Package NPN complement

BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327

[1] Also available in SOT54A and SOT54 variant packages (seeSection 2).

1.2 Features

Philips JEITA

[1]

SOT54 (TO-92) SC-43A BC337

■ High current

■ Low voltage

1.3 Applications

■ General-purpose switching and ampliﬁcation

1.4 Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

[1] Pulse test: tp≤ 300 µs; δ≤ 0.02.

collector-emitter voltage open base;

collector current (DC) - - −500 mA peak collector current - - −1A DC current gain IC= −100 mA;

BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600

=10mA

= −1V

--−45 V

[1]

Page 2

Philips Semiconductors

2. Pinning information

Table 3: Pinning

Pin Description Simpliﬁed outline Symbol

SOT23

1 base 2 emitter 3 collector

SOT323

1 base 2 emitter 3 collector

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

sym013

SOT54

1 emitter 2 base 3 collector

SOT54A

1 emitter 2 base 3 collector

SOT54 variant

1 emitter 2 base 3 collector

sot323_so

1 2 3

001aab347

1 2 3

001aab348

1 2 3

001aab447

sym013

006aaa149

Product data sheet Rev. 05 — 21 February 2005 2 of 19

Page 3

Philips Semiconductors

3. Ordering information

Table 4: Ordering information

Type number

BC807 - plastic surface mounted package; 3 leads SOT23 BC807W SC-70 plastic surface mounted package; 3 leads SOT323

[2]

BC327

[1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (seeSection 2 and Section 9).

4. Marking

Table 5: Marking codes

Type number Marking code

BC807 5D* BC807-16 5A* BC807-25 5B* BC807-40 5C* BC807W 5D* BC807-16W 5A* BC807-25W 5B* BC807-40W 5C* BC327 C327 BC327-16 C32716 BC327-25 C32725 BC327-40 C32740

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

[1]

Package Name Description Version

SC-43A plastic single-ended leaded (through hole) package;

3 leads

[1]

SOT54

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

Product data sheet Rev. 05 — 21 February 2005 3 of 19

Page 4

Philips Semiconductors

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

amb

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

collector-base voltage open emitter - −50 V collector-emitter voltage open base;

=10mA

emitter-base voltage open collector - −5V collector current (DC) - −500 mA peak collector current - −1A peak base current - −200 mA total power dissipation

BC807 T BC807W T BC327 T

amb amb amb

≤ 25 °C ≤ 25 °C ≤ 25 °C

storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C

- −45 V

[1] [2]

- 250 mW

[1] [2]

- 200 mW

[1] [2]

- 625 mW

6. Thermal characteristics

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups.

thermal resistance from junction to ambient

BC807 T BC807W T BC327 T

amb amb amb

≤ 25 °C ≤ 25 °C ≤ 25 °C

[1] [2]

- - 500 K/W

[1] [2]

- - 625 K/W

[1] [2]

- - 200 K/W

Product data sheet Rev. 05 — 21 February 2005 4 of 19

Page 5

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

7. Characteristics

Table 8: Characteristics

= 25°C unless otherwise speciﬁed.

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

EBO

h V

V C

CEsat

BE c

collector-base cut-off current IE = 0 A; VCB = −20 V - - −100 nA

= 0 A; VCB = −20 V;

= 150 °C

--−5 µA

emitter-base cut-off current IC = 0 A; VEB = −5 V - - −100 nA DC current gain IC = −100 mA; VCE = −1 V

[1]

BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W;

100 - 250

BC327-16 BC807-25; BC807-25W;

160 - 400

BC327-25 BC807-40; BC807-40W;

250 - 600

BC327-40 DC current gain IC = −500 mA; VCE = −1 V collector-emitter saturation

IC = −500 mA; IB = −50 mA

[1]

40 - -

[1]

--−700 mV

voltage base-emitter voltage IC = −500 mA; VCE = −1 V collector capacitance IE = ie = 0 A; VCB = −10 V;

[2]

--−1.2 V

-5- pF

f=1MHz

transition frequency IC = −10 mA; VCE = −5 V;

80 - - MHz

f = 100 MHz

[1] Pulse test: tp≤ 300 µs; δ≤ 0.02. [2] VBE decreases by approximately 2 mV/K with increasing temperature.

Product data sheet Rev. 05 — 21 February 2005 5 of 19

Page 6

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

−10

006aaa119

(mA)

−10

300

200

100

−1

−10

(1)

(2)

(3)

−1 −10

VCE = −1 V. (1) T (2) T (3) T

= 150 °C.

amb

= 25 °C.

amb

= −55 °C.

amb

Fig 1. Selection -16: DC current gain as a function of

collector current; typical values.

−10

006aaa120

(mA)

−10

600

400

200

−10

−1

(1)

(2)

(3)

−1 −10

VCE = −1 V. (1) T (2) T (3) T

= 150 °C.

amb

= 25 °C.

amb

= −55 °C.

amb

Fig 2. Selection -25: DC current gain as a function of

collector current; typical values.

−10

006aaa121

(mA)

−10

800

600

400

200

−10

−1

(1)

(2)

(3)

−1 −10

VCE = −1 V. (1) T (2) T (3) T

= 150 °C.

amb

= 25 °C.

amb

= −55 °C.

amb

Fig 3. Selection -40: DC current gain as a function of collector current; typical values.

Product data sheet Rev. 05 — 21 February 2005 6 of 19

Page 7

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

−10

006aaa122

IC (mA)

−10

BEsat

(V)

−10

−1

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB = 10. (1) T (2) T (3) T

= −55 °C.

amb

= 25 °C.

amb

= 150 °C.

amb

Fig 4. Selection -16: Base-emitter saturation voltage

as a function of collector current; typical

values.

−10

006aaa123

IC (mA)

−10

BEsat

(V)

−10

−1

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB = 10. (1) T (2) T (3) T

= −55 °C.

amb

= 25 °C.

amb

= 150 °C.

amb

Fig 5. Selection -25: Base-emitter saturation voltage

as a function of collector current; typical

values.

−10

006aaa124

IC (mA)

−10

BEsat

(V)

−10

−1

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB = 10. (1) T (2) T (3) T

= −55 °C.

amb

= 25 °C.

amb

= 150 °C.

amb

Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values.

Product data sheet Rev. 05 — 21 February 2005 7 of 19

Page 8

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

−10

006aaa125

IC (mA)

−10

CEsat

(V)

−10

−1

−2

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB = 10. (1) T (2) T (3) T

= 150 °C.

amb

= 25 °C.

amb

= −55 °C.

amb

Fig 7. Selection -16: Collector-emitter saturation

voltage as a function of collector current;

typical values.

−10

006aaa126

IC (mA)

−10

CEsat

(V)

−1

−2

−3

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB = 10. (1) T (2) T (3) T

= 150 °C.

amb

= 25 °C.

amb

= −55 °C.

amb

Fig 8. Selection- 25: Collector-emitter saturation

voltage as a function of collector current;

typical values.

−10

006aaa127

IC (mA)

−10

CEsat

(V)

−10

−1

−2

−3

−10

(1)

(2)

(3)

−1

−1 −10

IC/IB = 10. (1) T (2) T (3) T

= 150 °C.

amb

= 25 °C.

amb

= −55 °C.

amb

Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values.

Product data sheet Rev. 05 — 21 February 2005 8 of 19

Page 9

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

−1.2

(A)

−0.8

−0.4

0 −5−4−2 −3−1

= 25 °C.

amb

006aaa128

(1)(3) (2)

(4) (5)

(6) (7)

(8)

(9)

(10)

VCE (V)

(1) IB = −16.0 mA. (2) IB = −14.4 mA. (3) IB = −12.8 mA. (4) IB = −11.2 mA. (5) IB = −9.6 mA. (6) IB = −8.0 mA. (7) IB = −6.4 mA. (8) IB = −4.8 mA. (9) IB = −3.2 mA.

(10) IB = −1.6 mA.

Fig 10. Selection -16: Collector current as a function of

collector-emitter voltage; typical values.

−1.2

(A)

−0.8

−0.4

0 −5−4−2 −3−1

= 25 °C.

amb

006aaa129

(1)(3)

(2)

(4) (5)

(6) (7)

(8)

(9)

(10)

VCE (V)

(1) IB = −13.0 mA. (2) IB = −11.7 mA. (3) IB = −10.4 mA. (4) IB = −9.1 mA. (5) IB = −7.8 mA. (6) IB = −6.5 mA. (7) IB = −5.2 mA. (8) IB = −3.9 mA. (9) IB = −2.6 mA.

(10) IB = −1.3 mA.

Fig 11. Selection -25: Collector current as a function of

collector-emitter voltage; typical values.

Product data sheet Rev. 05 — 21 February 2005 9 of 19

Page 10

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

(3)(4)

006aaa130

(1)(2)

(6) (7)

(8)

(9)

(10)

VCE (V)

amb

= 25 °C.

(A)

−1.2

−0.8

−0.4

0 −5−4−2 −3−1

(5)

(1) IB = −12.0 mA. (2) IB = −10.8 mA. (3) IB = −9.6 mA. (4) IB = −8.4 mA. (5) IB = −7.2 mA. (6) IB = −6.0 mA. (7) IB = −4.8 mA. (8) IB = −3.6 mA. (9) IB = −2.4 mA.

(10) IB = −1.2 mA.

Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values.

Product data sheet Rev. 05 — 21 February 2005 10 of 19

Page 11

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

8. Package outline

Plastic surface mounted package; 3 leads SOT23

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

1.4

1.2

REFERENCES

1.9

0.95

Qwv

2.5

2.1

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

99-09-13 04-11-04

Fig 13. Package outline SOT23 (TO-236AB).

Product data sheet Rev. 05 — 21 February 2005 11 of 19

Page 12

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Plastic surface mounted package; 3 leads SOT323

w M

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.8

OUTLINE VERSION

SOT323 SC-70

max

0.1

0.4

0.25

0.10

2.2

1.8

0.3

IEC JEDEC JEITA

1.35

1.3

1.15

REFERENCES

e1HEL

2.2

0.65

2.0

0.45

0.15

Qwv

0.23

0.13

0.20.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28 04-11-04

Fig 14. Package outline SOT323 (SC-70).

Product data sheet Rev. 05 — 21 February 2005 12 of 19

Page 13

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Plastic single-ended leaded (through hole) package; 3 leads SOT54

A L

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

5.2

5.0

0.48

0.40

OUTLINE

VERSION

SOT54 TO-92 SC-43A

0.45

0.38

4.8

4.4

0.66

0.55

IEC JEDEC JEITA

1.7

4.2

1.4

3.6

REFERENCES

2.54

1.27

14.5

12.7

(1)

max.

2.5

EUROPEAN

PROJECTION

ISSUE DATE

04-06-28 04-11-16

Fig 15. Package outline SOT54 (SC-43A/TO-92).

Product data sheet Rev. 05 — 21 February 2005 13 of 19

Page 14

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE VERSION

SOT54A

5.2

5.0

0.48

0.40

0 2.5 5 mm

0.66

0.45

0.38

4.8

4.4

0.55

IEC JEDEC JEITA

1.7

4.2

1.4

3.6

REFERENCES

5.08

scale

2.54

(1)

14.5

12.7

max.

3 2

EUROPEAN

PROJECTION

ISSUE DATE

97-05-13 04-06-28

Fig 16. Package outline SOT54A.

Product data sheet Rev. 05 — 21 February 2005 14 of 19

Page 15

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant

A L

1 2

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

5.2

5.0

OUTLINE

VERSION

SOT54 variant

0.48

0.40

0.66

0.45

0.38

4.8

4.4

0.55

IEC JEDEC JEITA

1.7

4.2

1.4

3.6

REFERENCES

2.54

1.27

14.5

12.7

max

2.5 2.5

(1)

max

EUROPEAN

PROJECTION

ISSUE DATE

04-06-28 05-01-10

Fig 17. Package outline SOT54 variant.

Product data sheet Rev. 05 — 21 February 2005 15 of 19

Page 16

Philips Semiconductors

9. Packing information

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BC807 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 BC807W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135 BC327 SOT54 bulk, straight leads - -412 BC327 SOT54A tape and reel, wide pitch - - -116 BC327 SOT54A tape ammopack, wide pitch - - -126 BC327 SOT 54 variant bulk, delta pinning (on-circle) - -112 -

[1] For further information and the availability of packing methods, seeSection 14.

[1]

3000 5000 10000

Product data sheet Rev. 05 — 21 February 2005 16 of 19

Page 17

Philips Semiconductors

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BC807_BC807W_ BC327_5

Modiﬁcations:

BC807_4 20040116 Product speciﬁcation - 9397 750 12393 BC807_3 BC807W_3 19990518 Product speciﬁcation - 9397 750 05954 BC807W_808W_

BC327_3 19990415 Product speciﬁcation - 9397 750 05675 BC327_2

20050221 Product data sheet CPCN200302007F

CPCN200405006F

9397 750 14023 BC807_4;

BC807W_3; BC327_3

• The format of the data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• This data sheet is a combination of the previous data sheets BC807_4, BC807W_3 and

BC327_3.

• Table 1 and 2 added

• Table 3 Discrete pinning for SOT54A and SOT54 variant added

• Table 5 Marking codes for BC327, BC327-16, BC327-25 and BC327-40 added

• Table 8 Typical value for C

changed to 5 pF according to CPCN200302007F1

• Figure 1, 2 and 3 amended

• Figure 4, 5, 6, 7, 8, 9, 10, 11 and 12 added

• Figure 15 changed according to CPCN200405006F

• Figure 16 and 17 added

• Section 9 added

CNV_2

Product data sheet Rev. 05 — 21 February 2005 17 of 19

Page 18

Philips Semiconductors

11. Data sheet status

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation Thisdata sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reservesthe right to change the speciﬁcation withoutnotice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improvethe design, manufacturingand supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Product data sheet Rev. 05 — 21 February 2005 18 of 19

Page 19

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Packing information. . . . . . . . . . . . . . . . . . . . . 16

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 18

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

14 Contact information . . . . . . . . . . . . . . . . . . . . 18

BC807; BC807W; BC327

45 V, 500 mA PNP general-purpose transistors

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 21 February 2005

Document number: 9397 750 14023