NXP BC547, BC547B, BC547C, BC847, BC847A Schematic [ru]

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

Rev. 07 — 10 December 2008 Product data sheet

1. Product profile

1.1 General description

NPN general-purpose transistors in small plastic packages.

Table 1. Product overview

Type number

BC847 SOT23 - TO-236AB BC857
BC847A BC857A
BC847B BC857B
BC847B/DG ­BC847C BC857C
BC847W SOT323 SC-70 - BC857W
BC847AW BC857AW
BC847BW BC857BW
BC847BW/DG ­BC847CW BC857CW
BC847T SOT416 SC-75 - BC857T
BC847AT BC857AT
BC847AT/DG ­BC847BT BC857BT
BC847CT BC857CT
BC847AM SOT883 SC-101 - BC857AM
BC847BM BC857BM
BC847CM BC857CM
BC547
BC547B
BC547C

[1]

[2]

[2]
[2]

Package PNP complement
NXP JEITA JEDEC

BC557B
BC557C

[2]

[2]
[2]

SOT54 SC-43A TO-92 BC557

[1] /DG: halogen-free
[2] Also available in SOT54A and SOT54 variant packages (seeSection 2).

NXP Semiconductors

1.2 Features

n Low current
n Low voltage
n Three different gain selections

1.3 Applications

n General-purpose switching and amplification

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

CEO

I

C

h

FE

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

collector-emitter voltage open base - - 45 V
collector current - - 100 mA
DC current gain VCE=5V; IC= 2 mA 110 - 800

group A 110 180 220

h

FE

group B 200 290 450

h

FE

group C 420 520 800

h

FE

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

SOT23, SOT323, SOT416

1 base
2 emitter
3 collector

SOT883

1 base
2 emitter
3 collector

3

12

006aaa144

1
2

Transparent

top view

3

3

1

2

sym021

3

1

2

sym021

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 2 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

Table 3. Pinning

…continued

Pin Description Simplified outline Graphic symbol

SOT54

1 emitter
2 base
3 collector

1
2
3

001aab347

3

2

1

sym026

SOT54A

1 emitter
2 base
3 collector

001aab348

1
2
3

3

2

1

sym026

SOT54 variant

1 emitter
2 base
3 collector

1
2
3

001aab447

3

2

1

sym026

3. Ordering information

Table 4. Ordering information

Type number

BC847 - plastic surface-mounted package; 3 leads SOT23
BC847A
BC847B
BC847B/DG
BC847C
BC847W SC-70 plastic surface-mounted package; 3 leads SOT323
BC847AW
BC847BW
BC847BW/DG
BC847CW

[1]

Package
Name Description Version

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 3 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

4. Marking

Table 4. Ordering information

Type number

[1]

Package

…continued

Name Description Version

BC847T SC-75 plastic surface-mounted package; 3 leads SOT416
BC847AT
BC847AT/DG
BC847BT
BC847CT
BC847AM SC-101 leadless ultra small plastic package; 3 solder lands;
BC847BM

body 1.0 × 0.6 × 0.5 mm

SOT883

BC847CM

[2]

BC547
BC547B
BC547C

[1] /DG: halogen-free
[2] Also available in SOT54 and SOT54 variant packages (seeSection 2 and Section 9).

[2]
[2]

SC-43A plastic single-ended leaded (through hole) package;

3 leads

SOT54

Table 5. Marking codes

Type number

[1]

Marking code

[2]

Type number

[1]

Marking code

[2]

BC847 1H* BC847AT 1E
BC847A 1E* BC847AT/DG B5
BC847B 1F* BC847BT 1F
BC847B/DG *BC BC847CT 1G
BC847C 1G* BC847AM D4
BC847W 1H* BC847BM D5
BC847AW 1E* BC847CM D6
BC847BW 1F* BC547 C547
BC847BW/DG G9* BC547B C547B
BC847CW 1G* BC547C C547C
BC847T 1N - -

[1] /DG: halogen-free
[2] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 4 of 15

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 45 V
emitter-base voltage open collector - 6 V
collector current - 100 mA
peak collector current single pulse;

t

≤ 1ms

p

peak base current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C
SOT23
SOT323
SOT416
SOT883
SOT54

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

- 200 mA

- 100 mA

[1]

- 250 mW

[1]

- 200 mW

[1]

- 150 mW

[2][3]

- 250 mW

[1]

- 500 mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from
junction to ambient

SOT23
SOT323
SOT416
SOT883
SOT54

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 5 of 15

in free air

[1]

- - 500 K/W

[1]

- - 625 K/W

[1]

- - 833 K/W

[2][3]

- - 500 K/W

[1]

- - 250 K/W

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

NF noise figure I

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

collector-basecut-off
current

emitter-base cut-off
current

DC current gain

group A VCE=5V; IC=10µA - 90 -

h

FE

group B VCE=5V; IC=10µA - 150 -

h

FE

group C VCE=5V; IC=10µA - 270 -

h

FE

DC current gain V

group A VCE=5V; IC= 2 mA 110 180 220

h

FE

group B VCE=5V; IC= 2 mA 200 290 450

h

FE

group C VCE=5V; IC= 2 mA 420 520 800

h

FE

collector-emitter
saturation voltage

base-emitter
saturation voltage

base-emitter voltage IC= 2 mA; VCE=5V

collector capacitance IE=ie= 0 A; VCB=10V;

emitter capacitance IC=ic= 0 A; VEB= 0.5 V;

transition frequency IC= 10 mA; VCE=5V;

VCB=30V; IE=0A --15nA

=30V; IE=0A;

V

CB

T

= 150 °C

j

--5µA

VEB=5V; IC= 0 A - - 100 nA

=5V; IC= 2 mA 110 - 800

CE

IC= 10 mA; IB= 0.5 mA - 90 200 mV

= 100 mA; IB=5mA

I

C

IC= 10 mA; IB= 0.5 mA

= 100 mA; IB=5mA

I

C

= 10 mA; VCE= 5 V - - 770 mV

I

C

[1]

- 200 400 mV

[2]

- 700 - mV

[2]

- 900 - mV

[2]

580 660 700 mV

- - 1.5 pF

f=1MHz

-11-pF

f=1MHz

100 - - MHz

f = 100 MHz

= 200 µA; VCE=5V;

C

R

=2kΩ; f = 1 kHz;

S

- 2 10 dB

B = 200 Hz

[1] Pulse test: tp≤ 300 µs; δ≤0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 6 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

400

h

FE

300

200

100

0

−1

10

(1)

(2)

(3)

11010210

mgt723

3

IC (mA)

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 1. Selection A: DC current gain as a function of

collector current; typical values

mgt724

IC (mA)

V

BE

(mV)

1200

1000

800

600

400

200

(1)

(2)

(3)

0

−1

10

11010210

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 2. Selection A: Base-emitter voltage as a

function of collector current; typical values

3

mgt725

IC (mA)

V

(mV)

10

CEsat

10

3

2

10

−1

10

(1)
(2)

(3)

11010210

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 3. Selection A: Collector-emitter saturation

voltage as a function of collector current;

typical values

1200

V

BEsat

(mV)

1000

(1)

800

600

400

200

0

3

−1

10

(2)

(3)

11010210

mgt726

3

IC (mA)

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 4. Selection A: Base-emitter saturation voltage

as a function of collector current; typical

values

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 7 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

600

h

FE

500

400

300

200

100

0

−1

10

11010210

(1)

(2)

(3)

mgt727

3

IC (mA)

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 5. Selection B: DC current gain as a function of

collector current; typical values

I

C

mgt728

(mA)

V

BE

(mV)

1200

1000

800

600

400

200

(1)

(2)

(3)

0

−2

10

−1

10

11010210

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 6. Selection B: Base-emitter voltage as a

function of collector current; typical values

3

mgt729

IC (mA)

V

(mV)

CEsat

4

10

3

10

2

10

10

−1

10

(1)

(2)

(3)

11010210

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 7. Selection B: Collector-emitter saturation

voltage as a function of collector current;

typical values

1200

V

BEsat

(mV)

1000

(1)

800

600

400

200

0

3

−1

10

(2)

(3)

11010210

mgt730

3

IC (mA)

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 8. Selection B: Base-emitter saturation voltage

as a function of collector current; typical

values

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 8 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

1200

h

FE

1000

800

600

400

200

(1)

(2)

(3)

0

−1

10

11010210

mgt731

3

IC (mA)

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 9. Selection C: DC current gain as a function of

collector current; typical values

mgt732

IC (mA)

V

BE

(mV)

1200

1000

800

600

400

200

(1)

(2)

(3)

0

−2

10

−1

10

11010210

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 10. Selection C: Base-emitter voltage as a

function of collector current; typical values

3

mgt733

IC (mA)

V

(mV)

10

CEsat

10

10

4

3

2

(1)

(2)(3)

10

−1

10

11010210

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −55 °C

Fig 11. Selection C: Collector-emitter saturation

voltage as a function of collector current;

typical values

1200

V

BEsat

(mV)

1000

800

600

400

200

0

3

−1

10

(1)

(2)

(3)

11010210

mgt734

3

IC (mA)

IC/IB=10
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C
=25°C
= 150 °C

Fig 12. Selection C: Base-emitter saturation voltage

as a function of collector current; typical

values

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 9 of 15

NXP Semiconductors

8. Package outline

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

2.5

2.1

3.0

2.8

3

0.45

0.15

1.4

1.2

12

0.48

1.9

0.38

1.1

0.9

0.15

0.09

2.2

1.8

0.4

0.3

0.45

0.15

3

2.2

1.35

2.0

1.15

12

1.3

04-11-04Dimensions in mm

Fig 13. Package outline SOT23 (TO-236AB) Fig 14. Package outline SOT323 (SC-70)

0.62

0.55

0.55

0.47

0.50

0.46

3

0.65

1.75

1.45

0.9

0.7

1.8

1.4

0.95

0.60

3

0.45

0.15

0.30

0.22

1.1

0.8

0.25

0.10

1.02

0.95

04-11-04Dimensions in mm

0.30

0.22

12

0.30

1

0.15

0.25

0.10

04-11-04Dimensions in mm

21

0.20

0.12

0.35

Fig 15. Package outline SOT416 (SC-75) Fig 16. Package outline SOT883 (SC-101)

4.2

3.6

4.8

4.4

5.2

5.0

14.5

12.7

0.45

0.38

0.48

0.40

1
2
3

1.27

2.54

04-11-16Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

3 max

14.5

12.7

Fig 17. Package outline SOT54 (SC-43A/TO-92) Fig 18. Package outline SOT54A

03-04-03Dimensions in mm

0.45

0.38

0.48

0.40

1

2

3

5.08

2.54

04-06-28Dimensions in mm

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 10 of 15

NXP Semiconductors

4.2

3.6

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

0.45

0.38

1.27

Fig 19. Package outline SOT54 variant

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number

BC847 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
BC847A
BC847B
BC847B/DG
BC847C
BC847W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
BC847AW
BC847BW
BC847BW/DG
BC847CW
BC847T SOT416 4 mm pitch, 8 mm tape and reel -115 - -135
BC847AT
BC847AT/DG
BC847BT
BC847CT
BC847AM SOT883 2 mm pitch, 8 mm tape and reel - - -315
BC847BM
BC847CM
BC547 SOT54 bulk, straight leads - -412 ­BC547B
BC547C

2.5

max

4.8

4.4

5.2

5.0

[2]

Package Description Packing quantity

14.5

12.7

0.48

0.40

1
2
3

1.27

[1]

2.54

05-01-10Dimensions in mm

3000 5000 10000

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 11 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number

BC547 SOT54A tape and reel, wide pitch - - -116
BC547B
BC547C
BC547 SOT54A tape ammopack, wide pitch - - -126
BC547B
BC547C
BC547 SOT54 variant bulk, delta pinning - -112 ­BC547B
BC547C

[1] For further information and the availability of packing methods, seeSection 12.
[2] /DG: halogen-free

[2]

Package Description Packing quantity

…continued

[1]

3000 5000 10000

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 12 of 15

NXP Semiconductors

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BC847_BC547_SER_7 20081210 Product data sheet - BC847_BC547_SER_6
Modifications:

BC847_BC547_SER_6 20050519 Product data sheet - BC846_BC847_ BC848_5,

BC846_BC847_BC848_5 20040206 Product specification - BC846_BC847_ BC848_4
BC847M_SERIES_2 20040310 Product specification - BC847M_SERIES_1
BC846T_847T_SERIES_3 20001115 Product specification - BC846T_847T_2
BC846W_BC847W_

BC848W_4
BC546_547_4 20041125 Product specification - BC546_547_3

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Table 1 “Product overview”: enhanced

• Table 4 “Ordering information”: enhanced

• Table 5 “Marking codes”: enhanced

• Table 6 “Limiting values”: I

conditions amended

EBO

• Table 8 “Characteristics”: symbol N for parameter noise figure redefined to NF

• Table 9 “Packing methods”: enhanced

• Section 11 “Legal information”: updated

BC847M_SERIES_2,
BC846T_847T_ SERIES_3,
BC846W_BC847W_BC848W_4,
BC546_547_4

20020204 Product specification - BC846W_847W_3

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 13 of 15

NXP Semiconductors

11. Legal information

11.1 Data sheet status

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document mayhave changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall haveno liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. Ashort data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 07 — 10 December 2008 14 of 15

NXP Semiconductors

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Packing information. . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12 Contact information. . . . . . . . . . . . . . . . . . . . . 14

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

BC847/BC547 series

45 V, 100 mA NPN general-purpose transistors

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 10 December 2008

Document identifier: BC847_BC547_SER_7