NXP BAW 56 NXP Datasheet

BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 — 26 November 2007 Product data sheet
1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package Package
BAV756S SOT363 SC-88 - very small quadruple common
BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra
BAW56S SOT363 SC-88 - very small quadruple common
BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode
NXP JEITA JEDEC
Configuration
configuration
anode/common cathode
dual common anode
small
anode/common anode

1.2 Features

n High switching speed: trr≤ 4ns n Low capacitance: Cd≤ 2pF n Low leakage current n Reverse voltage: VR≤ 90 V n Small SMD plastic packages

1.3 Applications

n High-speed switching n General-purpose switching
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
R
V
R
t
rr
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 ; measured at IR= 1 mA.
reverse current VR= 80 V - - 0.5 µA reverse voltage - - 90 V reverse recovery time
[1]
--4ns
NXP Semiconductors

2. Pinning information

Table 3. Pinning
Pin Description Simplified outline Symbol
BAV756S
1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and
4 cathode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1
BAW56; BAW56T; BAW56W
1 cathode (diode 1) 2 cathode (diode 2) 3 common anode
diode 3)
and diode 4)
BAV756S; BAW56 series
High-speed switching diodes
56
4
132
3
6254
13
006aab103
3
BAW56M
1 cathode (diode 1) 2 cathode (diode 2) 3 common anode
BAW56S
1 cathode (diode 1) 2 cathode (diode 2) 3 common anode (diode 3 and
diode 4) 4 cathode (diode 3) 5 cathode (diode 4) 6 common anode (diode 1 and
diode 2)
12
006aaa144
1 2
Transparent
top view
132
3
56
4
12
006aab099
3
12
006aab099
6254
13
006aab102
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 2 of 15
NXP Semiconductors

3. Ordering information

Table 4. Ordering information
Type number Package
BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56 - plastic surface-mounted package; 3 leads SOT23 BAW56M SC-101 leadless ultra small plastic package; 3 solder lands;
BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416 BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323

4. Marking

Table 5. Marking codes
Type number Marking code
BAV756S A7* BAW56 A1* BAW56M S5 BAW56S A1* BAW56T A1 BAW56W A1*
BAV756S; BAW56 series
High-speed switching diodes
Name Description Version
SOT883
body 1.0 × 0.6 × 0.5 mm
[1]
[1] * = -: made in Hong Kong
* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

5. Limiting values

Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
-90V
voltage reverse voltage - 90 V forward current
BAV756S T BAW56 T BAW56M T BAW56S T BAW56T T BAW56W T
=60°C - 250 mA
s
25 °C - 215 mA
amb
25 °C - 150 mA
amb
=60°C - 250 mA
s
=90°C - 150 mA
s
25 °C - 150 mA
amb
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 3 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
FRM
repetitive peak forward
- 500 mA
current
I
FSM
P
non-repetitive peak forward current
tot
total power dissipation
square wave
tp=1µs-4A
=1ms - 1 A
t
p
= 1 s - 0.5 A
t
p
[1]
[2]
BAV756S Ts=60°C - 350 mW BAW56 T BAW56M T BAW56S T BAW56T T BAW56W T
25 °C - 250 mW
amb
25 °C
amb
=60°C - 350 mW
s
=90°C
s
25 °C - 200 mW
amb
[3]
- 250 mW
[4]
- 170 mW
Per device
I
F
T
j
T
amb
T
stg
forward current
BAV756S T BAW56 T BAW56M T BAW56S T BAW56T T BAW56W T
=60°C - 100 mA
s
25 °C - 125 mA
amb
25 °C - 75 mA
amb
=60°C - 100 mA
s
=90°C - 75 mA
s
25 °C - 130 mA
amb
junction temperature - 150 °C ambient temperature 65 +150 °C storage temperature 65 +150 °C
[1] Tj=25°C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. [3] Reflow soldering is the only recommended soldering method. [4] Single diode loaded.

6. Thermal characteristics

Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
R
th(j-a)
thermal resistance from
in free air
junction to ambient
BAW56 - - 500 K/W BAW56M BAW56W - - 625 K/W
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 4 of 15
[1]
[2]
- - 500 K/W
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method.

7. Characteristics

Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
I
R
C
d
t
rr
V
FR
[1] Pulse test: tp≤ 300 µs; δ≤0.02. [2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 ; measured at IR= 1 mA. [3] When switched from IF= 10 mA; tr=20ns.
…continued
thermal resistance from junction to solder point
BAV756S - - 255 K/W BAW56 - - 360 K/W BAW56S - - 255 K/W BAW56T - - 350 K/W BAW56W - - 300 K/W
=25°C unless otherwise specified.
forward voltage
reverse current VR=25V --30nA
diode capacitance VR= 0 V; f = 1 MHz - - 2 pF reverse recovery time forward recovery voltage
[1]
IF= 1 mA - - 715 mV
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
F
= 80 V - - 0.5 µA
V
R
=25V;Tj= 150 °C--30µA
V
R
=80V;Tj= 150 °C - - 150 µA
V
R
[2]
--4ns
[3]
- - 1.75 V
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 5 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
3
10
I
F
(mA)
2
10
10
1
1
10
0.2 1.41.00.6
(1) T
amb
(2) T
amb
(3) T
amb
(4) T
amb
(1)
= 150 °C =85°C =25°C = 40 °C
(2) (3) (4)
006aab109
VF (V)
Fig 1. Forward current as a function of forward
voltage; typical values
2
10
I
FSM
(A)
10
1
1
10
110
10 10
2
mbg704
3
10
tp (µs)
Based on square wave currents. Tj=25°C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
4
10
I
R
(µA)
10
1
10
2
10
3
10
4
10
5
10
(1) T (2) T (3) T (4) T
2
1
0 1008040 6020
= 150 °C
amb
=85°C
amb
=25°C
amb
= 40 °C
amb
(1)
(2)
(3)
(4)
006aab110
VR (V)
Fig 3. Reverse current as a function of reverse
voltage; typical values
2.5
C
d
(pF)
2.0
1.5
1.0
0.5
0
025
f = 1 MHz; T
5
10 15 20
=25°C
amb
mbh191
V
(V)
R
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 6 of 15
NXP Semiconductors

8. Test information

BAV756S; BAW56 series
High-speed switching diodes
D.U.T.
I
RS = 50
V = V
R + IF × RS
F
SAMPLING
OSCILLOSCOPE
= 50
R
i
mga881
V
R
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr= 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
RS = 50
1 k 450
D.U.T.
OSCILLOSCOPE
Ri = 50
I
10 %
t
r
t
r
10 %
90 %
90 %
input signal
t
p
input signal
t
p
t
+ I
F
V
V
FR
t
t
rr
output signal
output signal
t
(1)
t
mga882
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 7 of 15
NXP Semiconductors

9. Package outline

BAV756S; BAW56 series
High-speed switching diodes
0.62
0.55
0.55
0.47
3
0.65
21
0.35
0.50
0.46
1.02
0.95
03-04-03Dimensions in mm
2.5
2.1
3.0
2.8
3
0.45
0.15
1.4
1.2
12
0.48
1.9
0.38
1.1
0.9
0.15
0.09
0.30
0.22
0.30
0.22
0.20
0.12
04-11-04Dimensions in mm
Fig 7. Package outline BAW56 (SOT23/TO-236AB) Fig 8. Package outline BAW56M (SOT883/SC-101)
2.2
2.0
1.35
1.15
pin 1 index
2.2
1.8
0.45
465
0.15
1.1
0.8
1.75
1.45
0.9
0.7
1.8
1.4
0.95
0.60
3
0.45
0.15
132
0.65
1.3
0.3
0.2
0.25
0.10
Fig 9. Package outline BAV756S and
BAW56S (SOT363/SC-88)
2.2
1.35
2.0
1.15
12
Fig 11. Package outline BAW56W (SOT323/SC-70)
12
0.30
1
06-03-16Dimensions in mm
0.15
0.25
0.10
04-11-04Dimensions in mm
Fig 10. Package outline BAW56T (SOT416/SC-75)
2.2
1.8
1.3
0.4
0.3
0.45
0.15
3
1.1
0.8
0.25
0.10
04-11-04Dimensions in mm
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 8 of 15
NXP Semiconductors

10. Packing information

BAV756S; BAW56 series
High-speed switching diodes

11. Soldering

Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
[2]
BAV756S SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115 -135
[3]
-125 -165 BAW56 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAW56M SOT883 2 mm pitch, 8 mm tape and reel - -315
[2]
BAW56S SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115 -135
[3]
-125 -165 BAW56T SOT416 4 mm pitch, 8 mm tape and reel -115 -135 BAW56W SOT323 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping
2.90
2.50
3
12
0.50 (3x)
0.60 (3x)
0.60 (3x)
2.70
sot023
solder lands solder resist
solder paste
occupied area
Dimensions in mm
3.00
0.85
1.30
0.85
1.00
3.30
Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB)
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 9 of 15
NXP Semiconductors
Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB)
BAV756S; BAW56 series
High-speed switching diodes
3.40
1.20 (2x)
solder lands solder resist occupied area
4.004.60
1.20
21
3
Dimensions in mm
2.80
4.50
preferred transport direction during soldering
sot023
1.30
0.30R = 0.05 (12×) R = 0.05 (12×)
0.35 (2×)
0.20
0.90
0.25 (2×)
solder lands
solder paste
0.30 (2×)
0.40 (2×)
0.50 (2×)
solder resist occupied area
0.30
0.40
0.50
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101)
0.60 0.70 0.80
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 10 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
solder lands solder paste solder resist occupied area
Dimensions in mm
2.35
0.50 (4×)
0.50 (4×)
2.65
1.20
2.40
0.60 (2×)
0.40 (2×)
0.90 2.10
Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88)
5.25
sot363
4.50
solder lands solder resist occupied area
Dimensions in mm
transport direction during soldering
1.15
3.75
Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88)
1.000.30 4.00
sot363
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 11 of 15
NXP Semiconductors
Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75)
2.0
0.85
BAV756S; BAW56 series
High-speed switching diodes
2.2
0.6
1.1
0.7
2
2.65
1.30
3
1
0.6
(3x)
1.9
solder lands solder resist occupied area
1.3250.75
1.5
0.5
(3x)
msa438
solder pasteDimensions in mm
2
0.60
0.852.35 (3×)
0.55 (3×)
3
1
2.40
0.50 (3×)
msa429
1.90
Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70)
4.60
4.00
1.15
2
2.103.65
preferred transport direction during soldering
3
1
0.90 (2×)
solder lands solder paste solder resist occupied area
Dimensions in mm
2.70 solder lands
solder resist occupied area
Dimensions in mm
msa419
Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70)
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 12 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes

12. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAV756S_BAW56_SER_5 20071126 Product data sheet - BAV756S_2
BAW56_4 BAW56S_2 BAW56T_2 BAW56W_4
Modifications:
BAV756S_2 19971021 Product specification - BAV756S_1 BAW56_4 20030325 Product specification - BAW56_3 BAW56S_2 19971021 Product specification - BAW56S_1 BAW56T_2 19971219 Product specification - ­BAW56W_4 19990511 Product specification - BAW56W_3
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BAW56M added
Section 1.1 “General description”: amended
Table 1 “Product overview”: added
Table 2 “Quick reference data”: added
Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of V
maximum value from 85 V to 90 V
RRM
Table 6 “Limiting values”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of V
maximum value from 75 V to 90 V
R
Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of I
Table8 “Characteristics”: for BAV756Schange of I
for T
j
condition VR from 75 V to 80 V for Tj=25°C
R
=25°C
maximum value from 2.5 µAto0.5µA
R
Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
I
maximum value from 1 µA to 0.5 µA for Tj=25°C
R
Table 8 “Characteristics”: for BAV756S, BAW56, BAW56S, BAW56T and BAW56W
change of I
Table 8 “Characteristics”: for BAV756S change of I
for I
R
Table 8 “Characteristics”: for BAV756S change of I
150 µA for T
condition VR from 75 V to 80 V for Tj= 150 °C
R
condition VR=25V; Tj= 150 °C
= 150 °C
j
maximum value from 60 µA to 30 µA
R
maximum value from 100 µA to
R
Table 8 “Characteristics”: for BAW56, BAW56S, BAW56T and BAW56W change of
I
maximum value from 50 µA to 150 µA for Tj= 150 °C
R
Section 8 “Test information”: added
Section 10 “Packing information”: added
Section 11 “Soldering”: added
Section 13 “Legal information”: updated
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 13 of 15
NXP Semiconductors

13. Legal information

13.1 Data sheet status

BAV756S; BAW56 series
High-speed switching diodes
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 14 of 15
NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14 Contact information. . . . . . . . . . . . . . . . . . . . . 14
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
BAV756S; BAW56 series
High-speed switching diodes
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BAV756S_BAW56_SER_5
Date of release: 26 November 2007
Loading...