BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 — 26 November 2007 Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package Package
BAV756S SOT363 SC-88 - very small quadruple common
BAW56 SOT23 - TO-236AB small dual common anode
BAW56M SOT883 SC-101 - leadless ultra
BAW56S SOT363 SC-88 - very small quadruple common
BAW56T SOT416 SC-75 - ultra small dual common anode
BAW56W SOT323 SC-70 - very small dual common anode
NXP JEITA JEDEC
Configuration
configuration
anode/common cathode
dual common anode
small
anode/common anode
1.2 Features
n High switching speed: trr≤ 4ns n Low capacitance: Cd≤ 2pF
n Low leakage current n Reverse voltage: VR≤ 90 V
n Small SMD plastic packages
1.3 Applications
n High-speed switching
n General-purpose switching
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
R
V
R
t
rr
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
reverse current VR= 80 V - - 0.5 µA
reverse voltage - - 90 V
reverse recovery time
[1]
--4ns
NXP Semiconductors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
BAV756S
1 anode (diode 1)
2 cathode (diode 2)
3 common anode (diode 2 and
4 cathode (diode 3)
5 anode (diode 4)
6 common cathode (diode 1
BAW56; BAW56T; BAW56W
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
diode 3)
and diode 4)
BAV756S; BAW56 series
High-speed switching diodes
56
4
132
3
6254
13
006aab103
3
BAW56M
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
BAW56S
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode (diode 3 and
diode 4)
4 cathode (diode 3)
5 cathode (diode 4)
6 common anode (diode 1 and
diode 2)
12
006aaa144
1
2
Transparent
top view
132
3
56
4
12
006aab099
3
12
006aab099
6254
13
006aab102
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 2 of 15
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number Package
BAV756S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56 - plastic surface-mounted package; 3 leads SOT23
BAW56M SC-101 leadless ultra small plastic package; 3 solder lands;
BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363
BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416
BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323
4. Marking
Table 5. Marking codes
Type number Marking code
BAV756S A7*
BAW56 A1*
BAW56M S5
BAW56S A1*
BAW56T A1
BAW56W A1*
BAV756S; BAW56 series
High-speed switching diodes
Name Description Version
SOT883
body 1.0 × 0.6 × 0.5 mm
[1]
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
-90V
voltage
reverse voltage - 90 V
forward current
BAV756S T
BAW56 T
BAW56M T
BAW56S T
BAW56T T
BAW56W T
=60°C - 250 mA
s
≤ 25 °C - 215 mA
amb
≤ 25 °C - 150 mA
amb
=60°C - 250 mA
s
=90°C - 150 mA
s
≤ 25 °C - 150 mA
amb
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 3 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
FRM
repetitive peak forward
- 500 mA
current
I
FSM
P
non-repetitive peak forward
current
tot
total power dissipation
square wave
tp=1µs-4A
=1ms - 1 A
t
p
= 1 s - 0.5 A
t
p
[1]
[2]
BAV756S Ts=60°C - 350 mW
BAW56 T
BAW56M T
BAW56S T
BAW56T T
BAW56W T
≤ 25 °C - 250 mW
amb
≤ 25 °C
amb
=60°C - 350 mW
s
=90°C
s
≤ 25 °C - 200 mW
amb
[3]
- 250 mW
[4]
- 170 mW
Per device
I
F
T
j
T
amb
T
stg
forward current
BAV756S T
BAW56 T
BAW56M T
BAW56S T
BAW56T T
BAW56W T
=60°C - 100 mA
s
≤ 25 °C - 125 mA
amb
≤ 25 °C - 75 mA
amb
=60°C - 100 mA
s
=90°C - 75 mA
s
≤ 25 °C - 130 mA
amb
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1] Tj=25°C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Single diode loaded.
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
R
th(j-a)
thermal resistance from
in free air
junction to ambient
BAW56 - - 500 K/W
BAW56M
BAW56W - - 625 K/W
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 4 of 15
[1]
[2]
- - 500 K/W
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
I
R
C
d
t
rr
V
FR
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
[2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
[3] When switched from IF= 10 mA; tr=20ns.
…continued
thermal resistance from
junction to solder point
BAV756S - - 255 K/W
BAW56 - - 360 K/W
BAW56S - - 255 K/W
BAW56T - - 350 K/W
BAW56W - - 300 K/W
=25°C unless otherwise specified.
forward voltage
reverse current VR=25V --30nA
diode capacitance VR= 0 V; f = 1 MHz - - 2 pF
reverse recovery time
forward recovery voltage
[1]
IF= 1 mA - - 715 mV
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
F
= 80 V - - 0.5 µA
V
R
=25V;Tj= 150 °C--30µA
V
R
=80V;Tj= 150 °C - - 150 µA
V
R
[2]
--4ns
[3]
- - 1.75 V
BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 26 November 2007 5 of 15
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