Datasheet BAW156 Datasheet (NXP) [ru]

DATA SH EET

ok, halfpage

DISCRETE SEMICONDUCTORS

M3D088

BAW156

Low-leakage double diode

Product data sheet
Supersedes data of 1996 Mar 13

1999 May 11

NXP Semiconductors Product data sheet

Low-leakage double diode BAW156

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 μs

• Continuous reverse voltage:

75 V

max.

• Repetitive peak reverse voltage:
max.

85 V

• Repetitive peak forward current:
max. 500

mA.

APPLICATION

• Low-leakage current applications in
surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common anode configuration.

PINNING

PIN DESCRIPTION

1 cathode
2 cathode
3 common anode

handbook, 4 columns

Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.

21

3

Top view

Fig.1 Simplified outline (SOT23) and symbol.

21

3

MAM206

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
V
I

RRM
R

F

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; note 1; see Fig.2 − 160 mA

double diode loaded; note 1; see Fig.2 − 140 mA

I

FRM

I

FSM

repetitive peak forward current − 500 mA
non-repetitive peak forward

current

square wave; Tj = 25 °C prior to surge;

Fig.4

see

tp = 1 μs − 4 A
tp = 1 ms − 1 A
tp = 1 s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 11 2

NXP Semiconductors Product data sheet

Low-leakage double diode BAW156

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

forward voltage see Fig.3

IF = 1 mA − 900 mV
IF = 10 mA − 1 000 mV
IF = 50 mA − 1 100 mV
IF = 150 mA − 1 250 mV

reverse current see Fig.5

VR = 75 V 0.003 5 nA

VR = 75 V; Tj = 150 °C 3 80 nA
diode capacitance f = 1 MHz; VR = 0; see Fig.6 3 − pF
reverse recovery time when switched from IF = 10 mA to

I

= 10 mA; RL = 100 Ω;

R

0.8 3 μs

measured at IR = 1 mA; see Fig.7

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 11 3

NXP Semiconductors Product data sheet

h

Low-leakage double diode BAW156

GRAPHICAL DATA

300

handbook, halfpage

I

F

(mA)

200

100

double diode loaded

0

0 200

Device mounted on a FR4 printed-circuit board.

single diode loaded

100

T ( C)

amb

MLB756

o

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

300

andbook, halfpage

I

F

MLB752 - 1

(mA)

200

(1) (2) (3)

100

0

0 1.6

(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.

0.8 1.20.4
V (V)

F

Fig.3 Forward current as a function of forward

voltage; per diode.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.

= 25 °C prior to surge.

T

j

10

2

10

3

10

tp (μs)

MBG704

4

10

Fig.4 Maximum permissible non-repetitive peak forward curr ent as a function of pulse duration per diode.

1999 May 11 4

NXP Semiconductors Product data sheet

Low-leakage double diode BAW156

2

10

handbook, halfpage

I

R

(nA)

10

1

1

10

2

10

3

10

VR = 75 V.

(1)

(2)

500

100

MLB754

150 200

o

T ( C)

j

Fig.5 Reverse current as a function of junction

temperature; per diode.

MBG525

C

(pF)

4

d

handbook, halfpage

3

2

1

0

01020155

f = 1 MHz; Tj = 25 °C.

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; per diode; typical values.

handbook, full pagewidth

R = 50

Ω

S

V = V I x R

RF S

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

Ω

R = 50

i

MGA881

t

r

10%

V

R

90%

input signal

t

p

t

I

F

t

rr

t

(1)

output signal

Fig.7 Reverse recovery time test circuit and waveforms.

1999 May 11 5

NXP Semiconductors Product data sheet

3

Low-leakage double diode BAW156

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w

M

B

E

H

E

detail X

AB

Q

L

p

X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

1

0.48

0.38

cD

b

p

0.15

3.0

0.09

2.8

IEC JEDEC EIAJ

e

E

1.4

1.9

1.2

REFERENCES

e

0.95

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

1999 May 11 6

NXP Semiconductors Product data sheet

Low-leakage double diode BAW156

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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does not give any representations or warranties,
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specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

1999 May 11 7

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 May 11 Document order nu mber: 9397 750 05951