NXP BAW156 Schematic [ru]
DATA SH EET
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DISCRETE SEMICONDUCTORS
M3D088
BAW156
Low-leakage double diode
Product data sheet
Supersedes data of 1996 Mar 13
1999 May 11
NXP Semiconductors Product data sheet
Low-leakage double diode BAW156
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 μs
• Continuous reverse voltage:
75 V
max.
• Repetitive peak reverse voltage:
max.
85 V
• Repetitive peak forward current:
max. 500
mA.
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common anode configuration.
PINNING
PIN DESCRIPTION
1 cathode
2 cathode
3 common anode
handbook, 4 columns
Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.
21
3
Top view
Fig.1 Simplified outline (SOT23) and symbol.
21
3
MAM206
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
RRM
R
F
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; note 1; see Fig.2 − 160 mA
double diode loaded; note 1; see Fig.2 − 140 mA
I
FRM
I
FSM
repetitive peak forward current − 500 mA
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
Fig.4
see
tp = 1 μs − 4 A
tp = 1 ms − 1 A
tp = 1 s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 11 2
NXP Semiconductors Product data sheet
Low-leakage double diode BAW156
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
IF = 1 mA − 900 mV
IF = 10 mA − 1 000 mV
IF = 50 mA − 1 100 mV
IF = 150 mA − 1 250 mV
reverse current see Fig.5
VR = 75 V 0.003 5 nA
VR = 75 V; Tj = 150 °C 3 80 nA
diode capacitance f = 1 MHz; VR = 0; see Fig.6 3 − pF
reverse recovery time when switched from IF = 10 mA to
I
= 10 mA; RL = 100 Ω;
R
0.8 3 μs
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 11 3
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