NXP BAV70, BAV70M, BAV70S, BAV70T, BAV70W Schematic [ru]

BAV70 series

High-speed switching diodes

Rev. 07 — 27 November 2007 Product data sheet

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.

Table 1. Product overview

Type number Package Package

BAV70 SOT23 - TO-236AB small dual common cathode
BAV70M SOT883 SC-101 - leadless ultra

BAV70S SOT363 SC-88 - very small quadruple common

BAV70T SOT416 SC-75 - ultra small dual common cathode
BAV70W SOT323 SC-70 - very small dual common cathode

NXP JEITA JEDEC

Configuration

configuration

dual common cathode

small

cathode/common cathode

1.2 Features

n High switching speed: trr≤ 4ns n Low capacitance: Cd≤ 1.5 pF
n Low leakage current n Reverse voltage: VR≤ 100 V
n Small SMD plastic packages

1.3 Applications

n High-speed switching
n General-purpose switching

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

I

R

V

R

t

rr

[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.

reverse current VR= 80 V - - 0.5 µA
reverse voltage - - 100 V
reverse recovery time

[1]

--4ns

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

BAV70; BAV70T; BAV70W

1 anode (diode 1)
2 anode (diode 2)
3 common cathode

BAV70M

1 anode (diode 1)
2 anode (diode 2)
3 common cathode

BAV70 series

High-speed switching diodes

3

1

12

006aaa144

1
2

Transparent

top view

3

1

3

2

006aab034

3

2

006aab034

BAV70S

1 anode (diode 1)
2 anode (diode 2)
3 common cathode (diode 3

4 anode (diode 3)
5 anode (diode 4)
6 common cathode (diode 1

3. Ordering information

Table 4. Ordering information

Type number Package

BAV70 - plastic surface-mounted package; 3 leads SOT23
BAV70M SC-101 leadless ultra small plastic package; 3 solder lands;

BAV70S SC-88 plastic surface-mounted package; 6 leads SOT363
BAV70T SC-75 plastic surface-mounted package; 3 leads SOT416
BAV70W SC-70 plastic surface-mounted package; 3 leads SOT323

56

4

6254

and diode 4)

132

13

and diode 2)

Name Description Version

body 1.0 × 0.6 × 0.5 mm

006aab104

SOT883

BAV70_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 27 November 2007 2 of 15

NXP Semiconductors

4. Marking

Table 5. Marking codes

Type number Marking code

BAV70 A4*
BAV70M S4
BAV70S A4*
BAV70T A4
BAV70W A4*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

V

RRM

V

R

I

F

I

FRM

I

FSM

BAV70 series

High-speed switching diodes

[1]

repetitive peak reverse
voltage

reverse voltage - 100 V
forward current

BAV70 T
BAV70M T
BAV70S T
BAV70T T
BAV70W T

≤ 25 °C - 215 mA

amb

=90°C - 150 mA

s

=60°C - 250 mA

s

=90°C - 150 mA

s

≤ 25 °C - 175 mA

amb

repetitive peak forward
current

BAV70 - 450 mA
BAV70M - 500 mA
BAV70S - 450 mA
BAV70T - 500 mA
BAV70W - 500 mA

non-repetitivepeakforward
current

square wave

tp=1µs-4A

=1ms - 1 A

t

p

= 1 s - 0.5 A

t

p

- 100 V

[1]

BAV70_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 27 November 2007 3 of 15

NXP Semiconductors

BAV70 series

High-speed switching diodes

Table 6. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

tot

total power dissipation

BAV70 T
BAV70M T
BAV70S T
BAV70T T
BAV70W T

≤ 25 °C - 250 mW

amb

≤ 25 °C

amb

=60°C - 350 mW

s

=90°C - 170 mW

s

≤ 25 °C - 200 mW

amb

[2]

[3]

- 250 mW

Per device

I

F

T

j

T

amb

T

stg

[1] Tj=25°C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Reflow soldering is the only recommended soldering method.

forward current

BAV70 T
BAV70M T
BAV70S T
BAV70T T
BAV70W T

≤ 25 °C - 125 mA

amb

=90°C - 75 mA

s

=60°C - 100 mA

s

=90°C - 75 mA

s

≤ 25 °C - 100 mA

amb

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per diode

R

th(j-a)

R

th(j-t)

R

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.

thermal resistance from
junction to ambient

BAV70 - - 500 K/W
BAV70M
BAV70W - - 625 K/W

thermal resistance from
junction to tie-point

BAV70 - - 360 K/W
BAV70W - - 300 K/W

thermal resistance from
junction to solder point

BAV70S - - 255 K/W
BAV70T - - 350 K/W

in free air

[1]

[2]

- - 500 K/W

BAV70_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 27 November 2007 4 of 15

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

F

I

R

C

d

t

rr

V

FR

[1] Pulse test: tp≤ 300 µs; δ≤0.02.
[2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
[3] When switched from IF= 10 mA; tr=20ns.

=25°C unless otherwise specified.

forward voltage

reverse current VR=25V --30nA

diode capacitance VR= 0 V; f = 1 MHz - - 1.5 pF
reverse recovery time
forward recovery voltage

BAV70 series

High-speed switching diodes

[1]

IF= 1 mA - - 715 mV

= 10 mA - - 855 mV

I

F

=50mA --1V

I

F

= 150 mA - - 1.25 V

I

F

= 80 V - - 0.5 µA

V

R

=25V;Tj= 150 °C--30µA

V

R

=80V;Tj= 150 °C - - 100 µA

V

R

[2]

--4ns

[3]

- - 1.75 V

BAV70_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 27 November 2007 5 of 15