NXP BAV70, BAV70M, BAV70S, BAV70T, BAV70W Schematic [ru]

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BAV70 series

High-speed switching diodes

Rev. 07 — 27 November 2007 Product data sheet

1. Product proﬁle

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

Table 1. Product overview

Type number Package Package

BAV70 SOT23 - TO-236AB small dual common cathode BAV70M SOT883 SC-101 - leadless ultra

BAV70S SOT363 SC-88 - very small quadruple common

BAV70T SOT416 SC-75 - ultra small dual common cathode BAV70W SOT323 SC-70 - very small dual common cathode

NXP JEITA JEDEC

Conﬁguration

conﬁguration

dual common cathode

small

cathode/common cathode

1.2 Features

n High switching speed: trr≤ 4ns n Low capacitance: Cd≤ 1.5 pF n Low leakage current n Reverse voltage: VR≤ 100 V n Small SMD plastic packages

1.3 Applications

n High-speed switching n General-purpose switching

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.

reverse current VR= 80 V - - 0.5 µA reverse voltage - - 100 V reverse recovery time

[1]

--4ns

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

BAV70; BAV70T; BAV70W

1 anode (diode 1) 2 anode (diode 2) 3 common cathode

BAV70M

1 anode (diode 1) 2 anode (diode 2) 3 common cathode

BAV70 series

High-speed switching diodes

006aaa144

1 2

Transparent

top view

006aab034

BAV70S

1 anode (diode 1) 2 anode (diode 2) 3 common cathode (diode 3

4 anode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1

3. Ordering information

Table 4. Ordering information

Type number Package

BAV70 - plastic surface-mounted package; 3 leads SOT23 BAV70M SC-101 leadless ultra small plastic package; 3 solder lands;

BAV70S SC-88 plastic surface-mounted package; 6 leads SOT363 BAV70T SC-75 plastic surface-mounted package; 3 leads SOT416 BAV70W SC-70 plastic surface-mounted package; 3 leads SOT323

6254

and diode 4)

132

and diode 2)

Name Description Version

body 1.0 × 0.6 × 0.5 mm

006aab104

SOT883

Product data sheet Rev. 07 — 27 November 2007 2 of 15

NXP Semiconductors

4. Marking

Table 5. Marking codes

Type number Marking code

BAV70 A4* BAV70M S4 BAV70S A4* BAV70T A4 BAV70W A4*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

RRM

FRM

FSM

BAV70 series

High-speed switching diodes

[1]

repetitive peak reverse voltage

reverse voltage - 100 V forward current

BAV70 T BAV70M T BAV70S T BAV70T T BAV70W T

≤ 25 °C - 215 mA

amb

=90°C - 150 mA

=60°C - 250 mA

=90°C - 150 mA

≤ 25 °C - 175 mA

amb

repetitive peak forward current

BAV70 - 450 mA BAV70M - 500 mA BAV70S - 450 mA BAV70T - 500 mA BAV70W - 500 mA

non-repetitivepeakforward current

square wave

tp=1µs-4A

=1ms - 1 A

= 1 s - 0.5 A

- 100 V

[1]

Product data sheet Rev. 07 — 27 November 2007 3 of 15

NXP Semiconductors

BAV70 series

High-speed switching diodes

Table 6. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

total power dissipation

BAV70 T BAV70M T BAV70S T BAV70T T BAV70W T

≤ 25 °C - 250 mW

amb

≤ 25 °C

amb

=60°C - 350 mW

=90°C - 170 mW

≤ 25 °C - 200 mW

amb

[2]

[3]

- 250 mW

Per device

amb

stg

[1] Tj=25°C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Reﬂow soldering is the only recommended soldering method.

forward current

BAV70 T BAV70M T BAV70S T BAV70T T BAV70W T

≤ 25 °C - 125 mA

amb

=90°C - 75 mA

=60°C - 100 mA

=90°C - 75 mA

≤ 25 °C - 100 mA

amb

junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per diode

th(j-a)

th(j-t)

th(j-sp)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reﬂow soldering is the only recommended soldering method.

thermal resistance from junction to ambient

BAV70 - - 500 K/W BAV70M BAV70W - - 625 K/W

thermal resistance from junction to tie-point

BAV70 - - 360 K/W BAV70W - - 300 K/W

thermal resistance from junction to solder point

BAV70S - - 255 K/W BAV70T - - 350 K/W

in free air

[1]

[2]

- - 500 K/W

Product data sheet Rev. 07 — 27 November 2007 4 of 15

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

[1] Pulse test: tp≤ 300 µs; δ≤0.02. [2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA. [3] When switched from IF= 10 mA; tr=20ns.

=25°C unless otherwise speciﬁed.

forward voltage

reverse current VR=25V --30nA

diode capacitance VR= 0 V; f = 1 MHz - - 1.5 pF reverse recovery time forward recovery voltage

BAV70 series

High-speed switching diodes

[1]

IF= 1 mA - - 715 mV

= 10 mA - - 855 mV

=50mA --1V

= 150 mA - - 1.25 V

= 80 V - - 0.5 µA

=25V;Tj= 150 °C--30µA

=80V;Tj= 150 °C - - 100 µA

[2]

--4ns

[3]

- - 1.75 V

Product data sheet Rev. 07 — 27 November 2007 5 of 15

NXP Semiconductors

BAV70 series

High-speed switching diodes

(mA)

−1

0.2 1.41.00.6

(1) T

amb

(2) T

amb

(3) T

amb

(4) T

amb

(1) (2) (3) (4)

= 150 °C =85°C =25°C = −40 °C

006aab107

VF (V)

Fig 1. Forward current as a function of forward

voltage; typical values

FSM

(A)

−1

110

10 10

mbg704

tp (µs)

Based on square wave currents. Tj=25°C; prior to surge

Fig 2. Non-repetitive peak forward current as a

function of pulse duration; maximum values

(µA)

−1

−2

−3

−4

−5

(1) T (2) T (3) T (4) T

0 1008040 6020

= 150 °C

amb

=85°C

amb

=25°C

amb

= −40 °C

amb

(1)

(2)

(3)

(4)

006aab108

VR (V)

Fig 3. Reverse current as a function of reverse

voltage; typical values

0.8

(pF

)

0.6

0.4

0.2

0816124

f = 1 MHz; T

amb

=25°C

mbg446

VR (V)

Fig 4. Diode capacitance as a function of reverse

voltage; typical values

Product data sheet Rev. 07 — 27 November 2007 6 of 15

NXP Semiconductors

8. Test information

BAV70 series

High-speed switching diodes

D.U.T.

RS = 50 Ω

V = V

R + IF × RS

SAMPLING

OSCILLOSCOPE

= 50 Ω

mga881

(1) IR=1mA

Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr= 0.35 ns

Fig 5. Reverse recovery time test circuit and waveforms

RS = 50 Ω

1 kΩ 450 Ω

D.U.T.

OSCILLOSCOPE

Ri = 50 Ω

10 %

90 %

input signal

+ I

output signal

(1)

mga882

Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty cycle δ≤0.005

Fig 6. Forward recovery voltage test circuit and waveforms

Product data sheet Rev. 07 — 27 November 2007 7 of 15

NXP Semiconductors

9. Package outline

BAV70 series

High-speed switching diodes

0.62

0.55

0.47

0.65

0.35

0.50

0.46

1.02

0.95

03-04-03Dimensions in mm

2.5

2.1

3.0

2.8

0.45

0.15

1.4

1.2

0.48

1.9

0.38

1.1

0.9

0.15

0.09

0.30

0.22

0.30

0.22

0.20

0.12

04-11-04Dimensions in mm

Fig 7. Package outline BAV70 (SOT23/TO-236AB) Fig 8. Package outline BAV70M (SOT883/SC-101)

2.2

2.0

1.35

1.15

pin 1 index

2.2

1.8

0.45

465

0.15

1.1

0.8

1.75

1.45

0.9

0.7

1.8

1.4

0.95

0.60

0.45

0.15

132

0.65

1.3

0.3

0.2

0.25

0.10

06-03-16Dimensions in mm

0.30

0.15

0.25

0.10

Fig 9. Package outline BAV70S (SOT363/SC-88) Fig 10. Package outline BAV70T (SOT416/SC-75)

2.2

2.0

2.2

1.8

1.35

1.15

1.3

0.4

0.3

0.45

0.15

1.1

0.8

0.25

0.10

04-11-04Dimensions in mm

Fig 11. Package outline BAV70W (SOT323/SC-70)

04-11-04Dimensions in mm

Product data sheet Rev. 07 — 27 November 2007 8 of 15

NXP Semiconductors

10. Packing information

BAV70 series

High-speed switching diodes

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

BAV70 SOT23 4 mm pitch, 8 mm tape and reel -215 -235 BAV70M SOT883 2 mm pitch, 8 mm tape and reel - -315

[2]

BAV70S SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-115 -135

[3]

-125 -165 BAV70T SOT416 4 mm pitch, 8 mm tape and reel -115 -135 BAV70W SOT323 4 mm pitch, 8 mm tape and reel -115 -135

[1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping

2.90

2.50

2.70

0.60 (3x)

0.50 (3x)

0.60 (3x)

sot023

3.00

0.85

1.30

0.85

1.00

3.30

Fig 12. Reﬂow soldering footprint BAV70 (SOT23/TO-236AB)

solder lands solder resist

solder paste

occupied area

Dimensions in mm

Product data sheet Rev. 07 — 27 November 2007 9 of 15

NXP Semiconductors

Fig 13. Wave soldering footprint BAV70 (SOT23/TO-236AB)

BAV70 series

High-speed switching diodes

3.40

1.20 (2x)

solder lands solder resist occupied area

4.004.60

1.20

Dimensions in mm

2.80

4.50

preferred transport direction during soldering

sot023

1.30

0.30R = 0.05 (12×) R = 0.05 (12×)

0.35 (2×)

0.20

0.90

0.25 (2×)

solder lands

solder paste

0.30 (2×)

0.40 (2×)

0.50 (2×)

solder resist occupied area

0.30

0.40

0.50

Dimensions in mm

Reﬂow soldering is the only recommended soldering method.

Fig 14. Reﬂow soldering footprint BAV70M (SOT883/SC-101)

0.60 0.70 0.80

Product data sheet Rev. 07 — 27 November 2007 10 of 15

NXP Semiconductors

BAV70 series

High-speed switching diodes

2.65

2.35

solder lands solder paste solder resist occupied area

Dimensions in mm

0.50 (4×)

1.20

2.40

Fig 15. Reﬂow soldering footprint BAV70S (SOT363/SC-88)

5.25

0.60 (2×)

0.40 (2×)

0.90 2.10

sot363

4.50

solder lands solder resist occupied area

Dimensions in mm

transport direction during soldering

1.15

3.75

Fig 16. Wave soldering footprint BAV70S (SOT363/SC-88)

1.000.30 4.00

sot363

Product data sheet Rev. 07 — 27 November 2007 11 of 15

NXP Semiconductors

Fig 17. Reﬂow soldering footprint BAV70T (SOT416/SC-75)

2.0

0.85

2.65

1.30

High-speed switching diodes

2.2

0.6

1.1

0.7

0.6

(3x)

1.9

solder lands solder resist occupied area

1.3250.75

0.5

(3x)

msa438

solder pasteDimensions in mm

BAV70 series

1.5

0.60

0.852.35 (3×)

0.55 (3×)

2.40

0.50 (3×)

msa429

1.90

Fig 18. Reﬂow soldering footprint BAV70W (SOT323/SC-70)

4.60

4.00

1.15

2.103.65

preferred transport direction during soldering

0.90 (2×)

solder lands solder paste solder resist occupied area

Dimensions in mm

2.70 solder lands

solder resist occupied area

Dimensions in mm

msa419

Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70)

Product data sheet Rev. 07 — 27 November 2007 12 of 15

NXP Semiconductors

BAV70 series

High-speed switching diodes

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BAV70_SER_7 20071127 Product data sheet - BAV70_6

BAV70S_2 BAV70T_3 BAV70W_6

Modiﬁcations: • The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number BAV70M added

• Section 1.1 “General description”: amended

• Table 1 “Product overview”: added

• Table 2 “Quick reference data”: added

• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of V

value from 85 V to 100 V

• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of V

from 75 V to 100 V

• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of

condition VR from 75 V to 80 V for Tj=25°C

• Table 8 “Characteristics”: for BAV70, BAV70S and BAV70W change of I

from 2.5 µA to 0.5 µA for T

• Table 8 “Characteristics”: for BAV70T change of I

for T

=25°C

maximum value from 2.0 µA to 0.5 µA

• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of

maximum value from 60 µA to 30 µA for IRcondition VR=25V; Tj= 150 °C

• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of

condition VR from 75 V to 80 V for Tj= 150 °C

• Section 8 “Test information”: added

• Section 10 “Packing information”: added

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

BAV70_6 20020403 Product speciﬁcation - BAV70_5 BAV70S_2 19971021 Product speciﬁcation - BAV70S_1 BAV70T_3 20040204 Product speciﬁcation - BAV70T_2 BAV70W_6 20020405 Product speciﬁcation - BAV70W_5

maximum

RRM

maximum value

Product data sheet Rev. 07 — 27 November 2007 13 of 15

NXP Semiconductors

13. Legal information

13.1 Data sheet status

BAV70 series

High-speed switching diodes

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The productstatus ofdevice(s) describedin thisdocument mayhave changed since this document was publishedand maydiffer incase ofmultiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Deﬁnition

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Product data sheet Rev. 07 — 27 November 2007 14 of 15

NXP Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

BAV70 series

High-speed switching diodes

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 November 2007

Document identifier: BAV70_SER_7

NXP BAV70, BAV70M, BAV70S, BAV70T, BAV70W Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Test information

9. Package outline

10. Packing information

11. Soldering

12. Revision history

13. Legal information

13.1 Data sheet status

13.3 Disclaimers

13.4 Trademarks

14. Contact information

15. Contents