NXP BAV 199 SMD, BAV 199 NXP Datasheet
DATA SH EET
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DISCRETE SEMICONDUCTORS
M3D088
BAV199
Low-leakage double diode
Product data sheet
Supersedes data of 1999 May 11
2001 Oct 12
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
75 V
max.
• Repetitive peak reverse voltage:
max.
85 V
• Repetitive peak forward current:
max. 500
mA.
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
MARKING
TYPE NUMBER
MARKING
CODE
BAV199 JY∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
handbook, 4 columns
21
Top view
Fig.1 Simplified outline (SOT23) and symbol.
PINNING
PIN DESCRIPTION
(1)
1 anode
2 cathode
3 anode; cathode
21
3
3
MAM107
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
V
I
RRM
R
F
repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; note 1; see Fig.2 − 160 mA
double diode loaded; note 1; see Fig.2 − 140 mA
I
FRM
I
FSM
repetitive peak forward current − 500 mA
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
Fig.4
see
tp = 1 µs − 4 A
tp = 1 ms − 1 A
tp = 1 s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
= 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12 2
NXP Semiconductors Product data sheet
Low-leakage double diode BAV199
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
IF = 1 mA − 900 mV
IF = 10 mA − 1 000 mV
IF = 50 mA − 1 100 mV
IF = 150 mA − 1 250 mV
reverse current see Fig.5
VR = 75 V 0.003 5 nA
VR = 75 V; Tj = 150 °C 3 80 nA
diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF
reverse recovery time when switched from IF = 10 mA to
I
= 10 mA; RL = 100 Ω;
R
0.8 3 µs
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12 3
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