NXP BAV 199 SMD, BAV 199 NXP Datasheet

DATA SH EET

ok, halfpage

DISCRETE SEMICONDUCTORS

M3D088

BAV199

Low-leakage double diode

Product data sheet
Supersedes data of 1999 May 11

2001 Oct 12

NXP Semiconductors Product data sheet

Low-leakage double diode BAV199

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

75 V

max.

• Repetitive peak reverse voltage:
max.

85 V

• Repetitive peak forward current:
max. 500

mA.

APPLICATION

• Low-leakage current applications in
surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.

MARKING

TYPE NUMBER

MARKING

CODE

BAV199 JY∗

Note

1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.

handbook, 4 columns

21

Top view

Fig.1 Simplified outline (SOT23) and symbol.

PINNING

PIN DESCRIPTION

(1)

1 anode
2 cathode
3 anode; cathode

21

3

3

MAM107

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V
V
I

RRM
R

F

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current single diode loaded; note 1; see Fig.2 − 160 mA

double diode loaded; note 1; see Fig.2 − 140 mA

I

FRM

I

FSM

repetitive peak forward current − 500 mA
non-repetitive peak forward

current

square wave; Tj = 25 °C prior to surge;

Fig.4

see

tp = 1 µs − 4 A
tp = 1 ms − 1 A
tp = 1 s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

= 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on a FR4 printed-circuit board.

2001 Oct 12 2

NXP Semiconductors Product data sheet

Low-leakage double diode BAV199

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Per diode

V

F

I

R

C

d

t

rr

forward voltage see Fig.3

IF = 1 mA − 900 mV
IF = 10 mA − 1 000 mV
IF = 50 mA − 1 100 mV
IF = 150 mA − 1 250 mV

reverse current see Fig.5

VR = 75 V 0.003 5 nA

VR = 75 V; Tj = 150 °C 3 80 nA
diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF
reverse recovery time when switched from IF = 10 mA to

I

= 10 mA; RL = 100 Ω;

R

0.8 3 µs

measured at IR = 1 mA; see Fig.7

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 360 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on a FR4 printed-circuit board.

2001 Oct 12 3

NXP Semiconductors Product data sheet

h

Low-leakage double diode BAV199

GRAPHICAL DATA

300

handbook, halfpage

I

F

(mA)

200

100

double diode loaded

0

0 200

Device mounted on a FR4 printed-circuit board.

single diode loaded

100

T ( C)

amb

MLB756

o

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

300

andbook, halfpage

I

F

MLB752 - 1

(mA)

200

(1) (2) (3)

100

0

0 1.6

(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.

0.8 1.20.4
V (V)

F

Fig.3 Forward current as a function of forward

voltage; per diode.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents; Tj = 25 °C prior to surge.

10

2

10

3

10

tp (µs)

MBG704

4

10

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.

2001 Oct 12 4

NXP Semiconductors Product data sheet

Low-leakage double diode BAV199

2

10

handbook, halfpage

I

R

(nA)

10

(1)

MLB754

1

1

10

10

10

2

3

(2)

500

100

150 200

T ( C)

j

VR = 75 V.
(1) Maximum values.
(2) Typical values.

Fig.5 Reverse current as a function of junction

temperature; per diode.

MBG526

C

(pF)

2

d

handbook, halfpage

1

0

o

01020155

VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; per diode; typical values.

handbook, full pagewidth

R = 50

Ω

S

V = V I x R

RF S

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

Ω

R = 50

i

MGA881

t

r

10%

V

R

90%

input signal

t

p

t

I

F

t

rr

t

(1)

output signal

Fig.7 Reverse recovery time test circuit and waveforms.

2001 Oct 12 5

NXP Semiconductors Product data sheet

3

Low-leakage double diode BAV199

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

1

0.48

0.38

cD

b

p

0.15

0.09

IEC JEDEC EIAJ

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

H

L

e

1

E

2.5

2.1

0.45

0.15

0.95

Qwv

p

0.55

0.2

0.45

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2001 Oct 12 6

NXP Semiconductors Product data sheet

Low-leakage double diode BAV199

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document co ntains the product specification.

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product status of device(s ) described in this document may have changed sinc e this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2001 Oct 12 7

60134) may cause permanent damage to

NXP Semiconductors

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Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 12 Document order number: 9397 750 08764