NXP BAT 86 Datasheet

Page 1
BAT86
Vishay Semiconductors
formerly General Semiconductor
Document Number 88147 www.vishay.com 13-May-02 1
Schottky Diode
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
R
50 V
Forward Continuous Current at T
amb
= 25°CIF200
(1)
mA
Repetitive Forward Current at tp< 1s, υ 0.5, T
amb
= 25°CI
FRM
500
(1)
mA
Power Dissipation at T
amb
= 25°CP
tot
200
(1)
mW
Thermal Resistance Juntion to Ambient Air R
θJA
300
(1)
°C/W
Junction Temperature T
j
125 °C
Ambient Operating Temperature Range T
amb
–65 to +125 °C
Storage Temperature Range T
S
–65 to +150 °C
Features
For general purpose applications.
This diode features low turn-on voltage.This
device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
This diode is also available in the MiniMELF case
with type designation BAS86.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box
Electrical Characteristics(T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage V
(BR)R
I
R =
10µA (pulsed) 50 ——V
Leakage Current I
R
VR = 40V 0.3 5.0 µA
I
F
= 0.1mA 0.200 0.300
Forward Voltage
IF = 1mA 0.275 0.380
PulseTest t
p
< 300µs, δ < 2%
V
F
IF = 10mA 0.365 0.450 V I
F
= 30mA 0.460 0.600
IF = 100mA 0.700 0.900
Capacitance C
tot
VR= 1V, f = 1MHz ——8pF
Reverse Recovery Time t
rr
IF= 10mA to IR= 10mA
—— 5ns
to IR= 1mA
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
DO-204AH (DO-35 Glass)
Dimensions in inches
and (millimeters)
Loading...