NXP BAT54A, BAT54C, BAT54S Schematic [ru]
DATA SH EET
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DISCRETE SEMICONDUCTORS
M3D088
BAT54 series
Schottky barrier (double) diodes
Product data sheet
Supersedes data of 2001 Oct 12
2002 Mar 04
NXP Semiconductors Product data sheet
12
0
12
9
12
8
1
c.
Schottky barrier (double) diodes BAT54 series
FEATURES
• Low forward voltage
• Guard ring protected
• Small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
MARKING
T YPE NUMBER MARKING CODE
(1)
BAT54 L4∗
BAT54A L42 or ∗V3
BAT54C L43 or ∗W1
BAT54S L44 or ∗V4
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W: Made in China.
PINNING
DESCRIPTION
PIN
BAT54 BAT54A BA T54C BAT54S
1 a k
2 n.c. k
1
2
3 k a1, a
handbook, 2 columns
Top view
a
1
a
2
k1, k
2
3
MGC421
Fig.1 Simplified outline (SOT23) and pin
configuration.
3
2
n.
MLC357
(1) BAT54 (2) BAT54A
3
a
1
k
2
2
k1, a
2
21
3
MLC36
3
2002 Mar 04 2
MLC35
(3) BAT54C (4) BAT54S
Fig.2 Diode configuration and symbol.
MLC35
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
Per device
P
tot
THERMAL CHARACTERISTICS
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA
non-repetitive peak forward current tp < 10 ms − 600 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
total power dissipation T
≤ 25 °C − 230 mW
amb
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 500 K/W
ambient
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
forward voltage see Fig.3
IF = 0.1 mA 240 mV
IF = 1 mA 320 mV
IF = 10 mA 400 mV
IF = 30 mA 500 mV
IF = 100 mA 800 mV
I
R
t
rr
C
d
reverse current VR = 25 V; see Fig.4 2 μA
reverse recovery time when switched from IF = 10 mA
= 10 mA; RL = 100 Ω;
to I
R
measured at I
see
Fig.6
= 1 mA;
R
5 ns
diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 10 pF
2002 Mar 04 3
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