DATA SH EET
ok, halfpage
DISCRETE SEMICONDUCTORS
M3D088
BAT54 series
Schottky barrier (double) diodes
Product data sheet
Supersedes data of 2001 Oct 12
2002 Mar 04
NXP Semiconductors Product data sheet
12
0
12
9
12
8
1
c.
Schottky barrier (double) diodes BAT54 series
FEATURES
• Low forward voltage
• Guard ring protected
• Small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
MARKING
T YPE NUMBER MARKING CODE
(1)
BAT54 L4∗
BAT54A L42 or ∗V3
BAT54C L43 or ∗W1
BAT54S L44 or ∗V4
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W: Made in China.
PINNING
DESCRIPTION
PIN
BAT54 BAT54A BA T54C BAT54S
1 a k
2 n.c. k
1
2
3 k a1, a
handbook, 2 columns
Top view
a
1
a
2
k1, k
2
3
MGC421
Fig.1 Simplified outline (SOT23) and pin
configuration.
3
2
n.
MLC357
(1) BAT54 (2) BAT54A
3
a
1
k
2
2
k1, a
2
21
3
MLC36
3
2002 Mar 04 2
MLC35
(3) BAT54C (4) BAT54S
Fig.2 Diode configuration and symbol.
MLC35
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
Per device
P
tot
THERMAL CHARACTERISTICS
continuous reverse voltage − 30 V
continuous forward current − 200 mA
repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA
non-repetitive peak forward current tp < 10 ms − 600 mA
storage temperature −65 +150 °C
junction temperature − 125 °C
total power dissipation T
≤ 25 °C − 230 mW
amb
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
note 1 500 K/W
ambient
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
V
F
forward voltage see Fig.3
IF = 0.1 mA 240 mV
IF = 1 mA 320 mV
IF = 10 mA 400 mV
IF = 30 mA 500 mV
IF = 100 mA 800 mV
I
R
t
rr
C
d
reverse current VR = 25 V; see Fig.4 2 μA
reverse recovery time when switched from IF = 10 mA
= 10 mA; RL = 100 Ω;
to I
R
measured at I
see
Fig.6
= 1 mA;
R
5 ns
diode capacitance f = 1 MHz; VR = 1 V; see Fig.5 10 pF
2002 Mar 04 3
NXP Semiconductors Product data sheet
h
h
Schottky barrier (double) diodes BAT54 series
3
10
handbook, halfpage
I
F
(3)(2)(1)
(mA)
2
10
10
1
1
10
(3)(2)(1)
VF (V)
(1) T
= 125 °C.
amb
(2) T
= 85 °C.
amb
(3) T
= 25 °C.
amb
Fig.3 Forward current as a function of forward
voltage; typical values.
MSA892
MSA893
(1)
(2)
I
(μA)
3
10
R
2
10
10
1
1
1.20.80.40
10
0102030
(1) T
= 125 °C.
amb
(2) T
= 85 °C.
amb
(3) T
= 25 °C.
amb
(3)
V (V)
R
Fig.4 Reverse current as a function of reverse
voltage; typical values.
15
andbook, halfpage
C
d
(pF)
10
5
MSA891
andbook, halfpage
I
F
dI
F
dt
t
10%
Q
r
90%
I
R
0
0102030
f = 1 MHz; T
amb
= 25 °C.
VR (V)
t
f
MRC129 - 1
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
Fig.6 Reverse recovery definitions.
2002 Mar 04 4
NXP Semiconductors Product data sheet
3
Schottky barrier (double) diodes BAT54 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
1
A
max.
0.48
0.1
0.38
cD
b
p
0.15
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
1
0.95
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2002 Mar 04 5
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT54 series
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2002 Mar 04 6
60134) may cause permanent damage to
NXP Semiconductors
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made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands 613514/04/pp7 Date of release: 2002 Mar 04 Document order number: 9397 750 09408
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