NXP BAT 54J NXP Datasheet
BAT54J
Schottky barrier single diode
Rev. 01 — 8 March 2007 Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diode with an integrated guard ring for stress protection,
encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device
(SMD) plastic package.
1.2 Features
n Low forward voltage
n Very small and flat lead SMD plastic package
n Low capacitance
n Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
n Voltage clamping
n Line termination
n Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
R
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward current - - 200 mA
reverse voltage - - 30 V
forward voltage IF=1mA
[1]
- - 320 mV
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3. Ordering information
Type number Package
BAT54J SC-90 plastic surface-mounted package; 2 leads SOD323F
BAT54J
Schottky barrier single diode
[1]
21
Name Description Version
12
sym001
4. Marking
Table 4. Marking codes
Type number Marking code
BAT54J AP
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
reverse voltage - 30 V
forward current - 200 mA
repetitive peak forward
tp≤ 1s;δ≤0.5 - 300 mA
current
non-repetitive peak forward
current
total power dissipation T
square wave;
t
<10ms
p
≤ 25 °C
amb
- 600 mA
[1]
- 550 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
BAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 2 of 8
NXP Semiconductors
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
7. Characteristics
Table 7. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward voltage
reverse current VR=25V --2 µA
diode capacitance VR= 1 V; f = 1 MHz - - 10 pF
BAT54J
Schottky barrier single diode
in free air
IF= 0.1 mA - - 240 mV
= 1 mA - - 320 mV
I
F
= 10 mA - - 400 mV
I
F
= 30 mA - - 500 mV
I
F
= 100 mA - - 800 mV
I
F
[1][2]
- - 230 K/W
[3]
--55K/W
[1]
BAT54J_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 8 March 2007 3 of 8
Loading...