NXP BAT54, BAT54A, BAT54C, BAT54S Schematic [ru]

SOT23

12

3

006aaa436

1

3

2

n.c.

BAT54 series

Schottky barrier diodes

Rev. 5 — 5 October 2012 Product data sheet

1. Product profile

1.1 General description

Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.

1.2 Features and benefits

 Low forward voltage
 Low capacitance
 AEC-Q101 qualified

1.3 Applications

 Ultra high-speed switching  Voltage clamping
 Line termination  Reverse polarity protection

1.4 Quick reference data

Table 1. Quick reference data

T

=25C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

R

V

F

I

R

[1] Pulse test: tp 300 s; 0.02.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BAT54

1 anode
2 not connected
3 cathode

reverse voltage - - 30 V
forward voltage IF=100mA
reverse current VR=25V

[1]

--800mV

[1]

--2A

NXP Semiconductors

12

3

006aaa439

12

3

12

3

006aac984

12

3

12

3

006aaa437

12

3

BAT54 series

Schottky barrier diodes

Table 2. Pinning

…continued

Pin Description Simplified outline Graphic symbol

BAT54A

1 cathode (diode 1)
2 cathode (diode 2)
3 common anode

BAT54C

1 anode (diode 1)
2 anode (diode 2)
3 common cathode

BAT54S

1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),

anode (diode 2)

3. Ordering information

Table 3. Ordering information

Type number Package

BAT54 series - plastic surface-mounted package; 3 leads SOT23

4. Marking

Table 4. Marking codes

Type number Marking code

BAT54 L4*
BAT54A *V3
BAT54C *W1
BAT54S *V4

[1] * = placeholder for manufacturing site code.

Name Description Version

[1]

BAT54_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 5 — 5 October 2012 2 of 11

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

V

R

I

F

I

FRM

I

FSM

Per device; one diode loaded

P

tot

T

j

T

amb

T

stg

[1] Tj=25C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

BAT54 series

Schottky barrier diodes

reverse voltage - 30 V
forward current T
repetitive peak forward

current
non-repetitive peak

forward current

total power dissipation T
junction temperature - 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C

=25C-200mA

amb

tp 1s; 0.5;

=25C

T

amb

square wave;
t

<10ms

p

 25 C

amb

-300mA

[1]

-600mA

[2]

-250mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device; one diode loaded

R

th(j-a)

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses P

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

thermal resistance from
junction to ambient

R

in free air

are a significant part of the total power losses.

[1][2]

- - 500 K/W

BAT54_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 5 — 5 October 2012 3 of 11

NXP Semiconductors

006aac829

VF (V)

0.0 1.20.80.4

1

10

10

2

10

3

I

F

(mA)

10

-1

(1)

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(2)

(2) (3)

(3)

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7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

F

I

R

C

d

t

rr

[1] Pulse test: tp 300 s; 0.02.
[2] When switched from I

BAT54 series

Schottky barrier diodes

=25C unless otherwise specified.

forward voltage

IF= 0.1 mA - - 240 mV

= 1 mA - - 320 mV

I

F

= 10 mA - - 400 mV

I

F

= 30 mA - - 500 mV

I

F

= 100 mA - - 800 mV

I

F

reverse current VR=25V
diode capacitance f = 1 MHz; VR=1V --10pF
reverse recovery time

= 10 mA to IR=10mA; RL= 100 ; measured at IR=1mA.

F

[1]

[1]

--2A

[2]

--5ns

(1) T
(2) T
(3) T

amb
amb
amb

= 125 C
=85C
=25C

Fig 1. Forward current as a function of forward

voltage; typical values

(1) T
(2) T
(3) T

amb
amb
amb

= 125 C
=85C
=25C

Fig 2. Reverse current as a function of reverse

voltage; typical values

BAT54_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 5 — 5 October 2012 4 of 11