NXP BAT 46WJ NXP Datasheet

21

sym001

12

BAT46WJ

SOD323F

Single Schottky barrier diode

Rev. 2 — 8 November 2011 Product data sheet

1. Product profile

1.1 General description

Single planar Schottky barrier diode with an integrated guard ring for stress pro tection,
encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted
Device (SMD) plastic package.

1.2 Features and benefits

 Low forward voltage  Low capacitance
 Reverse voltage V
 Very small and flat lead SMD plastic

package

 100 V  AEC-Q101 qualified

R

1.3 Applications

 High-speed switching  Voltage clamping
 Line termination  Reverse polarity protection

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

R

V

F

I

R

[1] Pulse test: tp 300 s; 0.02.

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode
2 anode

reverse voltage - - 100 V
forward voltage IF=250mA
reverse current VR=75V

[1]

[1]

--850mV

[1]

--4A

[1] The marking bar indicates the cathode.

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BAT46WJ SC-90 plastic surface-mounted package; 2 leads SOD323F

4. Marking

Table 4. Marking codes

Type number Marking code

BAT46WJ JK

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

R

I

F

I

FSM

P

tot

T

j

T

amb

T

stg

[1] Tj=25C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
[4] Reflow soldering is the only recommended soldering method.

BAT46WJ

Single Schottky barrier diode

Name Description Version

reverse voltage - 100 V
forward current - 250 mA
non-repetitive peak

forward current
total power dissipation T

square wave;

<10ms

t

p

 25 C

amb

junction temperature - 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C

[1]

-2.5A

[2][4]

-400mW

[3][4]

-715mW

2

.

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from

in free air

junction to ambient

BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 8 November 2011 2 of 12

[1][3]

- - 310 K/W

[2][3]

- - 175 K/W

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006aac385

10

−5

1010

−2

10

−4

10

2

10

−1

tp (s)

10

−3

10

3

1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

duty cycle =

1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

006aac386

10

−5

1010

−2

10

−4

10

2

10

−1

tp (s)

10

−3

10

3

1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

duty cycle =

1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

BAT46WJ

Single Schottky barrier diode

Table 6. Thermal characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistance from

[4]

--35K/W

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
[3] Reflow soldering is the only recommended soldering method.
[4] Soldering point of cathode tab.

.

FR4 PCB, standard footprint

Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 8 November 2011 3 of 12

FR4 PCB, mounting pad for cathode 1 cm

2

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

V

F

I

R

C

d

t

rr

[1] Pulse test: tp 300 s; 0.02.
[2] When switched from I

=25C unless otherwise specified.

forward voltage

IF= 0.1 mA - 175 200 mV
I
I
I
I
I

reverse current

VR= 1.5 V - 0.2 0.5 A
V
V
V
V
V
V
V
V
V
V

diode capacitance f = 1 MHz

reverse recovery time

= 10 mA to IR=10mA; RL= 100 ; measured at IR=1mA.

F

BAT46WJ

Single Schottky barrier diode

[1]

= 10 mA - 315 350 mV

F

=10mA; Tj= 40 C - - 470 mV

F

= 50 mA - 415 475 mV

F

=50mA; Tj= 40 C - - 560 mV

F

= 250 mA - 710 850 mV

F

[1]

= 1.5 V; Tj=60C --12A

R

=10V - 0.3 0.8 A

R

=10V; Tj=60C --20A

R

=50V - 0.7 2 A

R

=50V; Tj=60C --44A

R

=75V - 1 4 A

R

=75V; Tj=60C --80A

R

=100V - 2 9 A

R

=100V; Tj=60C - - 120 A

R

=100V; Tj=85C - - 600 A

R

=0V --39pF

V

R

=1V --21pF

V

R

[2]

-5.9-ns

BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 8 November 2011 4 of 12