NXP BAT 46WJ NXP Datasheet

21
sym001
12
BAT46WJ
SOD323F
Single Schottky barrier diode
Rev. 2 — 8 November 2011 Product data sheet

1. Product profile

1.1 General description

Single planar Schottky barrier diode with an integrated guard ring for stress pro tection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Low forward voltage Low capacitanceReverse voltage VVery small and flat lead SMD plastic
package
100 V AEC-Q101 qualified
R

1.3 Applications

High-speed switching Voltage clampingLine termination Reverse polarity protection
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
R
V
F
I
R
[1] Pulse test: tp 300 s; 0.02.

2. Pinning information

Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode 2 anode
reverse voltage - - 100 V forward voltage IF=250mA reverse current VR=75V
[1]
[1]
--850mV
[1]
--4A
[1] The marking bar indicates the cathode.
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3. Ordering information

Table 3. Ordering information
Type number Package
BAT46WJ SC-90 plastic surface-mounted package; 2 leads SOD323F

4. Marking

Table 4. Marking codes
Type number Marking code
BAT46WJ JK

5. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
I
FSM
P
tot
T
j
T
amb
T
stg
[1] Tj=25C before surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm [4] Reflow soldering is the only recommended soldering method.
BAT46WJ
Single Schottky barrier diode
Name Description Version
reverse voltage - 100 V forward current - 250 mA non-repetitive peak
forward current total power dissipation T
square wave;
<10ms
t
p
25 C
amb
junction temperature - 150 C ambient temperature 55 +150 C storage temperature 65 +150 C
[1]
-2.5A
[2][4]
-400mW
[3][4]
-715mW
2
.

6. Thermal characteristics

Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
in free air
junction to ambient
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 2 of 12
[1][3]
- - 310 K/W
[2][3]
- - 175 K/W
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006aac385
10
5
1010
2
10
4
10
2
10
1
tp (s)
10
3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
006aac386
10
5
1010
2
10
4
10
2
10
1
tp (s)
10
3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
BAT46WJ
Single Schottky barrier diode
Table 6. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance from
[4]
--35K/W
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm [3] Reflow soldering is the only recommended soldering method. [4] Soldering point of cathode tab.
.
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 3 of 12
FR4 PCB, mounting pad for cathode 1 cm
2
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7. Characteristics

Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
t
rr
[1] Pulse test: tp 300 s; 0.02. [2] When switched from I
=25C unless otherwise specified.
forward voltage
IF= 0.1 mA - 175 200 mV I I I I I
reverse current
VR= 1.5 V - 0.2 0.5 A V V V V V V V V V V
diode capacitance f = 1 MHz
reverse recovery time
= 10 mA to IR=10mA; RL= 100 ; measured at IR=1mA.
F
BAT46WJ
Single Schottky barrier diode
[1]
= 10 mA - 315 350 mV
F
=10mA; Tj= 40 C - - 470 mV
F
= 50 mA - 415 475 mV
F
=50mA; Tj= 40 C - - 560 mV
F
= 250 mA - 710 850 mV
F
[1]
= 1.5 V; Tj=60C --12A
R
=10V - 0.3 0.8 A
R
=10V; Tj=60C --20A
R
=50V - 0.7 2 A
R
=50V; Tj=60C --44A
R
=75V - 1 4 A
R
=75V; Tj=60C --80A
R
=100V - 2 9 A
R
=100V; Tj=60C - - 120 A
R
=100V; Tj=85C - - 600 A
R
=0V --39pF
V
R
=1V --21pF
V
R
[2]
-5.9-ns
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 4 of 12
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006aac387
VF (V)
0.0 1.20.80.4
10
3
10
2
10
1
1
I
F
(A)
10
4
(1) (2)
(3)
(4)
(5)
(3)
(4)
(5)
006aac388
I
R
(A)
10
6
10
8
10
7
10
3
10
4
10
5
10
2
10
9
VR (V)
0 10060 8020 40
(5)
(1)
(2)
(4)
(3)
VR (V)
0 1008040 6020
006aac389
35
C
d
(pF)
25
15
5
0
10
20
30
BAT46WJ
Single Schottky barrier diode
(1) T (2) T (3) T (4) T (5) T
amb amb amb amb amb
= 150 C = 125 C =85C =25C = 40 C
Fig 3. Forward current as a function of forward
voltage; typical values
(1) T (2) T (3) T (4) T (5) T
amb amb amb amb amb
= 125 C =85C =60C =25C = 40 C
Fig 4. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
Fig 5. Diode capacitance as a function of reverse voltage; typical values
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
amb
=25C
Product data sheet Rev. 2 — 8 November 2011 5 of 12
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VR (V)
0 1008040 6020
006aac390
0.10
0.15
0.05
0.20
0.25
P
R(AV)
(W)
0.0
(1) (2) (3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aac391
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aac392
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tsp (°C)
0 50 100 150 1751257525
006aac393
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
BAT46WJ
Single Schottky barrier diode
Tj= 125 C (1) =1 (2) =0.9 (3) =0.8 (4) =0.5
Fig 6. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
= 150 C
T
j
(1) =1; DC (2) =0.5; f=20kHz (3) =0.2; f=20kHz (4) =0.1; f=20kHz
Fig 7. Average forward current as a function of
ambient temperature; typical values
FR4 PCB, mounting pad for cathode 1 cm
Tj= 150 C (1) =1; DC (2) =0.5; f=20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz
Fig 8. Average forward current as a function of
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 6 of 12
ambient temperature; typical values
2
= 150 C
T
j
(1) =1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
solder point temperature; typical values
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t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R + IF × RS
RS = 50
Ω
I
F
D.U.T.
R
i
= 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
I
FAVIM
=
I
RMSIFAV
=
I
RMSIM
=

8. Test information

(1) IR=1mA
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
=0.35ns
r
Fig 10. Reverse recovery time test circuit and waveforms
= 0.6 ns; reverse voltage pulse duration tp= 10 0 ns; duty cycle  =0.05
r
BAT46WJ
Single Schottky barrier diode
Fig 11. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are calculated according to the equations: with I
at DC, and with I
defined as RMS current.
RMS
defined as peak current,
M

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 7 of 12
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04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3
1.8
1.6
0.40
0.25
1.35
1.15
1
2
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323f_fr

9. Package outline

Fig 12. Package outline SOD323F (SC-90)
BAT46WJ
Single Schottky barrier diode

10. Packing information

Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BAT46WJ SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

[1]
3000 10000
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Fig 13. Reflow soldering footprint SOD323F (SC-90)
Reflow soldering is the only recommended soldering method.
Product data sheet Rev. 2 — 8 November 2011 8 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode

12. Revision history

Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAT46WJv.2 20111108 Product data sheet - BAT46WJ v.1 Modifications:
Table 7: unit for reverse current I
Table 7: conditions of reverse voltage V
Section 13 “Legal information”: updated
BAT46WJ v.1 20100728 Product data sheet - -
at VR= 50 V corrected to A
R
corrected
R
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 9 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode

13. Legal information

13.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or cust omer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
, unless otherwise
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 10 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BAT46WJ All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 November 2011 11 of 12
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15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
BAT46WJ
Single Schottky barrier diode
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 November 2011
Document identifier: BAT46WJ
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