NXP BAS 40-05 NXP Datasheet

BAS40 series;
1PSxxSB4x series

General-purpose Schottky diodes

Rev. 9 — 18 March 2015 Product data sheet

1. Product profile

1.1 General description

General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic
packages.

Table 1. Product overview

Type number Package Configuration

1PS70SB40 SOT323 SC-70 single diode
1PS76SB40 SOD323 SC-76 single diode
1PS79SB40 SOD523 SC-79 single diode
BAS40 SOT23 - single diode
BAS40H SOD123F - single diode
BAS40L SOD882 - single diode
BAS40W SOT323 SC-70 single diode
1PS70SB44 SOT323 SC-70 dual series
BAS40-04 SOT23 - dual series
BAS40-04W SOT323 SC-70 dual series
1PS70SB45 SOT323 SC-70 dual common cathode
1PS75SB45 SOT416 SC-75 dual common cathode
BAS40-05 SOT23 - dual common cathode
BAS40-05W SOT323 SC-70 dual common cathode
1PS70SB46 SOT323 SC-70 dual common anode
BAS40-06 SOT23 - dual common anode
BAS40-06W SOT323 SC-70 dual common anode
BAS40-07 SOT143B - dual isolated
BAS40-07V SOT666 - dual isolated
BAS40-05V SOT666 - quadruple common cathode/

1PS88SB48 SOT363 SC-88 quadruple common cathode/

BAS40XY SOT363 SC-88 quadruple; 2 series

NXP JEITA

common cathode

common cathode

NXP Semiconductors

001aab540

12

sym001

12

21

Transparent

top view

sym001

12

006aaa144

12

3

006aaa436

1

3

2

n.c.

1.2 Features and benefits

 High switching speed  Low leakage current
 Hig h br ea kd o wn vo ltage  Low capacitance
 AEC-Q101 qualified

1.3 Applications

 Ultra high-speed switching  Voltage clamping

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per diode

I

F

V

F

V

R

[1] Pulse test: tp 300 s; 0.02.

BAS40 series; 1PSxxSB4x series

General-purpose Schottky di od e s

forward current - - 120 mA
forward voltage IF=1mA
reverse voltage - - 40 V

[1]

--380mV

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

BAS40H; 1PS76SB40; 1PS79SB40

1 cathode
2 anode

BAS40L

1 cathode
2 anode

BAS40; BAS40W; 1PS70SB40

1 anode
2 not connected
3 cathode

[1]

[1]

BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 18 March 2015 2 of 22

NXP Semiconductors

006aaa144

12

3

006aaa437

12

3

006aaa144

12

3

12

3

006aaa144

12

3

006aaa439

12

3

21

34

006aaa434

2

34

1

123

456

006aaa440

654

123

BAS40 series; 1PSxxSB4x series

General-purpose Schottky di od e s

Table 3. Pinning

…continued

Pin Description Simplified outline Symbol

BAS40-04; BAS40-04W; 1PS70SB44

1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),

anode (diode 2)

BAS40-05; BAS40-05W; 1PS70SB45; 1PS75SB45

1 anode (diode 1)
2 anode (diode 2)
3 cathode (diode 1),

cathode (diode 2)

BAS40-06; BAS40-06W; 1PS70SB46

1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 1),

anode (diode 2)

BAS40-07

1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 2)
4 anode (diode 1)

BAS40-07V

1 anode (diode 1)
2 not connected
3 cathode (diode 2)
4 anode (diode 2)
5 not connected
6 cathode (diode 1)

BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 18 March 2015 3 of 22

NXP Semiconductors

001aab555

6 45

1 32

006aaa446

654

123

132

4

56

006aaa256

654

123

BAS40 series; 1PSxxSB4x series

General-purpose Schottky di od e s

Table 3. Pinning

…continued

Pin Description Simplified outline Symbol

BAS40-05V; 1PS88SB48

1 anode (diode 1)
2 anode (diode 2)
3 cathode (diode 3),

cathode (diode 4)
4 anode (diode 3)
5 anode (diode 4)
6 cathode (diode 1),

cathode (diode 2)

BAS40XY

1 anode (diode 1)
2 cathode (diode 2)
3 anode (diode 3),

cathode (diode 4)
4 anode (diode 4)
5 cathode (diode 3)
6 cathode (diode 1),

anode (diode 2)

[1] The marking bar indicates the cathode.

BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 18 March 2015 4 of 22

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number Package

1PS70SB40 SC-70 plastic surface-mounted package; 3 leads SOT323
1PS76SB40 SC-76 plastic surface-mounted package; 2 leads SOD323
1PS79SB40 SC-79 plastic surface-mounted package; 2 leads SOD523
BAS40 - plastic surface-mounted package; 3 leads SOT23
BAS40H - plastic surface-mounted package; 2 leads SOD123F
BAS40L - leadless ultra small plastic package; 2 terminals;

BAS40W SC-70 plastic surface-mounted package; 3 lea ds SOT323
1PS70SB44 SC-70 plastic surface-mounted package; 3 leads SOT323
BAS40-04 - plastic surface-mounted package; 3 leads SOT23
BAS40-04W SC-70 plastic surface-mounted package; 3 leads SOT323
1PS70SB45 SC-70 plastic surface-mounted package; 3 leads SOT323
1PS75SB45 SC-75 plastic surface-mounted package; 3 leads SOT416
BAS40-05 - plastic surface-mounted package; 3 leads SOT23
BAS40-05W SC-70 plastic surface-mounted package; 3 leads SOT323
1PS70SB46 SC-70 plastic surface-mounted package; 3 leads SOT323
BAS40-06 - plastic surface-mounted package; 3 leads SOT23
BAS40-06W SC-70 plastic surface-mounted package; 3 leads SOT323
BAS40-07 - plastic surface-mounted package; 4 leads SOT143B
BAS40-07V - plastic surface-mounted package; 6 leads SOT666
BAS40-05V - plastic surface-mounted package; 6 leads SOT666
1PS88SB48 SC-88 plastic surface-mounted package; 6 leads SOT363
BAS40XY SC-88 plastic surface-mounted package; 6 leads SOT363

BAS40 series; 1PSxxSB4x series

General-purpose Schottky di od e s

Name Description Version

SOD882

body 1.0  0.6  0.5 mm

BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 18 March 2015 5 of 22

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4. Marking

Table 5. Marking codes

Type number Marking code

1PS70SB40 6*3 1PS75SB45 45
1PS76SB40 S4 BAS40-05 45*
1PS79SB40 T BAS40-05W 65*
BAS40 43* 1PS70SB46 6*6
BAS40H AJ BAS40-06 46*
BAS40L S6 BAS40-06W 66*
BAS40W 63* BAS40-07 47*
1PS70SB44 6*4 BAS40-07V 67
BAS40-04 44* BAS40-05V 65
BAS40-04W 64* 1PS88SB48 8*5
1PS70SB45 6*5 BAS40XY 40*

[1] * = -: made in Hong Kong

BAS40 series; 1PSxxSB4x series

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

General-purpose Schottky di od e s

Type number Marking code

[1]

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

V

R

I

F

I

FRM

I

FSM

T

j

T

amb

T

stg

[1] Tj=25C prior to surge.

reverse voltage - 40 V
forward current - 120 mA
repetitive peak forward

tp 1s; 0.5 - 120 mA

current
non-repetitive peak forward

tp 10 ms

[1]

-200mA

current
junction temperature - 150 C
ambient temperature 65 +150 C
storage temperature 65 +150 C

BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 18 March 2015 6 of 22

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per device

R

th(j-a)

R

th(j-sp)

thermal resistance from
junction to ambient

SOT23 - - 500 K/W

SOT143B - - 500 K/W

SOT363 (1PS88SB48) - - 416 K/W

SOT416 - - 833 K/W

SOT666 (BAS40-05V)

SOT666 (BAS40-07V)

SOD123F

SOD323 - - 450 K/W

SOD523

SOD882

SOT323 - - 625 K/W

thermal resistance from
junction to solder point

SOT363 (BAS40XY)

BAS40 series; 1PSxxSB4x series

General-purpose Schottky di od e s

in free air

[1]

[2]

--225K/W

[2]

--416K/W

[2]

--330K/W

[2]

--450K/W

[2]

--500K/W

[3]

--260K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point at pins 2, 3, 5 and 6.

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

F

I

R

C

d

[1] Pulse test: tp 300 s; 0.02.

=25C unless otherwise specified.

forward voltage

[1]

IF= 1 mA - - 380 mV

= 10 mA - - 500 mV

I

F

=40mA - - 1 V

I

F

reverse current VR=30V - - 1 A

=40V - - 10 A

V

R

diode capacitance VR=0V; f=1MHz - - 5 pF

BAS40_1PSXXSB4X_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet Rev. 9 — 18 March 2015 7 of 22