BAS32L
High-speed switching diode
Rev. 04 — 22 March 2005 Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C SMD package.
1.2 Features
■ Small hermetically sealed glass SMD package
■ High switching speed: ≤ 4 ns
■ Continuous reverse voltage: ≤ 75 V
■ Repetitive peak reverse voltage: ≤ 100 V
■ Repetitive peak forward current: ≤ 450 mA
1.3 Applications
■ High-speed switching
■ Inverse-polarity protection
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
I
FRM
V
R
V
F
t
rr
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
forward current
repetitive peak forward
current
reverse voltage - - 75 V
forward voltage IF = 100 mA - - 1000 mV
reverse recovery time
[1]
- - 200 mA
- - 450 mA
[2]
--4ns
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking band indicates the cathode.
3. Ordering information
Table 3: Ordering information
Type number Package
BAS32L - hermetically sealed glass surface mounted package;
BAS32L
High-speed switching diode
[1]
ka
sym006
Name Description Version
SOD80C
2 connectors
4. Marking
Table 4: Marking codes
Type number Marking code
BAS32L Marking band
[1] black: made in Philippines
brown: made in China
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
[1]
repetitive peak reverse
- 100 V
voltage
reverse voltage - 75 V
forward current
repetitive peak forward
[1]
- 200 mA
- 450 mA
current
non-repetitive peak forward
current
total power dissipation T
square wave
tp = 1 µs-4A
= 1 ms - 1 A
t
p
= 1 s - 0.5 A
t
p
= 25 °C
amb
[2]
[1]
- 500 mW
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 2 of 11
Philips Semiconductors
BAS32L
High-speed switching diode
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge
junction temperature - 200 °C
ambient temperature −65 +200 °C
storage temperature −65 +200 °C
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
…continued
in free air
[1]
- - 350 K/W
- - 300 K/W
Table 7: Characteristics
T
= 25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
forward voltage IF = 5 mA 620 - 750 mV
= 100 mA - - 1000 mV
I
F
= 100 mA; Tj= 100 °C - - 930 mV
I
F
reverse current VR = 20 V - - 25 nA
= 75 V - - 5 µA
V
R
= 20 V; Tj = 150 °C--50µA
V
R
= 75 V; Tj = 150 °C - - 100 µA
V
R
diode
VR = 0 V; f = 1 MHz - - 2 pF
capacitance
t
rr
reverse recovery
[1]
--4ns
time
V
FR
forward recovery
[2]
- - 2.5 V
voltage
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
[2] When switched from IF = 50 mA; tr = 20 ns
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 3 of 11
Philips Semiconductors
BAS32L
High-speed switching diode
amb
mbg451
(°C)
300
I
F
(mA)
200
100
0
0 100 200
T
Mounted on an FR4 PCB; standard footprint (1) Tj = 175 °C; typical values
Fig 1. Maximum permissible forward current as a
function of ambient temperature
mbg704
I
FSM
(A)
2
10
600
I
F
(mA)
400
(1) (2) (3)
200
0
012
mbg464
VF (V)
(2) Tj = 25 °C; typical values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward
voltage
mgd006
I
R
(mA)
3
10
2
10
10
1
−1
10
110
10 10
2
3
10
tp (µs)
4
Based on square wave currents
Tj = 25 °C prior to surge
Fig 3. Maximum permissible non-repetitive peak
forward current as a function of pulse duration
10
1
−1
10
−2
10
0 100
(1) (2)
T
(oC)
j
(3)
200
(1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 20 V; typical values
Fig 4. Reverse current as a function of junction
temperature
9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 22 March 2005 4 of 11
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