NXP BAS 32 SMD Datasheet

BAS32L

High-speed switching diode

Rev. 04 — 22 March 2005 Product data sheet

1. Product proﬁle

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.

1.2 Features

■ Small hermetically sealed glass SMD package

■ High switching speed: ≤ 4 ns

■ Continuous reverse voltage: ≤ 75 V

■ Repetitive peak reverse voltage: ≤ 100 V

■ Repetitive peak forward current: ≤ 450 mA

1.3 Applications

■ High-speed switching

■ Inverse-polarity protection

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

FRM

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA

forward current repetitive peak forward

current reverse voltage - - 75 V forward voltage IF = 100 mA - - 1000 mV reverse recovery time

[1]

- - 200 mA

- - 450 mA

[2]

--4ns

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode 2 anode

[1] The marking band indicates the cathode.

3. Ordering information

Table 3: Ordering information

Type number Package

BAS32L - hermetically sealed glass surface mounted package;

BAS32L

High-speed switching diode

[1]

sym006

Name Description Version

SOD80C

2 connectors

4. Marking

Table 4: Marking codes

Type number Marking code

BAS32L Marking band

[1] black: made in Philippines

brown: made in China

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

RRM

FRM

FSM

tot

[1]

repetitive peak reverse

- 100 V

voltage reverse voltage - 75 V forward current repetitive peak forward

[1]

- 200 mA

- 450 mA

current non-repetitive peak forward

current

total power dissipation T

square wave

tp = 1 µs-4A

= 1 ms - 1 A

= 1 s - 0.5 A

= 25 °C

amb

[2]

[1]

- 500 mW

Product data sheet Rev. 04 — 22 March 2005 2 of 11

Philips Semiconductors

BAS32L

High-speed switching diode

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

amb

stg

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj = 25 °C prior to surge

junction temperature - 200 °C ambient temperature −65 +200 °C storage temperature −65 +200 °C

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to ambient

th(j-sp)

thermal resistance from junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

…continued

in free air

[1]

- - 350 K/W

- - 300 K/W

Table 7: Characteristics

= 25°C unless otherwise speciﬁed.

amb

Symbol Parameter Conditions Min Typ Max Unit

forward voltage IF = 5 mA 620 - 750 mV

= 100 mA - - 1000 mV

= 100 mA; Tj= 100 °C - - 930 mV

reverse current VR = 20 V - - 25 nA

= 75 V - - 5 µA

= 20 V; Tj = 150 °C--50µA

= 75 V; Tj = 150 °C - - 100 µA

diode

VR = 0 V; f = 1 MHz - - 2 pF

capacitance

reverse recovery

[1]

--4ns

time

forward recovery

[2]

- - 2.5 V

voltage

[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA [2] When switched from IF = 50 mA; tr = 20 ns

Product data sheet Rev. 04 — 22 March 2005 3 of 11

Philips Semiconductors

BAS32L

High-speed switching diode

amb

mbg451

(°C)

300

(mA)

200

100

0 100 200

Mounted on an FR4 PCB; standard footprint (1) Tj = 175 °C; typical values

Fig 1. Maximum permissible forward current as a

function of ambient temperature

mbg704

FSM

(A)

600

(mA)

400

(1) (2) (3)

200

012

mbg464

VF (V)

(2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values

Fig 2. Forward current as a function of forward

voltage

mgd006

(mA)

−1

110

10 10

tp (µs)

Based on square wave currents Tj = 25 °C prior to surge

Fig 3. Maximum permissible non-repetitive peak

forward current as a function of pulse duration

−1

−2

0 100

(1) (2)

(oC)

(3)

200

(1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 20 V; typical values

Fig 4. Reverse current as a function of junction

temperature

Product data sheet Rev. 04 — 22 March 2005 4 of 11

Philips Semiconductors

BAS32L

High-speed switching diode

mgd004

VR (V)

Tj = 25 °C; f = 1 MHz

1.2

(pF)

1.0

0.8

0.6

0.4 01020

Fig 5. Diode capacitance as a function of reverse voltage; typical values

Product data sheet Rev. 04 — 22 March 2005 5 of 11

Philips Semiconductors

8. Test information

BAS32L

High-speed switching diode

D.U.T.

RS = 50 Ω

V = V

R + IF × RS

SAMPLING

OSCILLOSCOPE

= 50 Ω

mga881

Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ≤ 0.05 Oscilloscope: Rise time tr = 0.35 ns

(1) IR = 1 mA

Fig 6. Reverse recovery time test circuit and waveforms

RS = 50 Ω

1 kΩ 450 Ω

D.U.T.

OSCILLOSCOPE

Ri = 50 Ω

10 %

90 %

input signal

+ I

output signal

(1)

mga882

Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp≥ 100 ns; duty factor δ≤ 0.005

Fig 7. Forward recovery voltage test circuit and waveforms

Product data sheet Rev. 04 — 22 March 2005 6 of 11

Philips Semiconductors

9. Package outline

BAS32L

High-speed switching diode

Hermetically sealed glass surface mounted package; 2 connectors

(1)

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. The marking band indicates the cathode.

1.60

1.45

OUTLINE

VERSION

SOD80C 100H01

3.7

3.3

0.3

REFERENCES

IEC JEDEC JEITA

0 1 2 mm

scale

EUROPEAN

PROJECTION

SOD80C

ISSUE DATE

97-06-20 05-01-26

Fig 8. Package outline SOD80C

10. Packing information

Table 8: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BAS32L SOD80C 4 mm pitch, 8 mm tape and reel -115 -135

[1] For further information and the availability of packing methods, seeSection 16.

[1]

2500 10000

Product data sheet Rev. 04 — 22 March 2005 7 of 11

Philips Semiconductors

11. Soldering

BAS32L

High-speed switching diode

4.55

4.30

2.30 solder lands

solder resist

1.601.702.25 occupied area

solder paste

0.90 (2x)

Dimensions in mm

Fig 9. Reﬂow soldering footprint SOD80C

6.30

4.90

2.70

1.90

1.702.90

Dimensions in mm

Fig 10. Wave soldering footprint SOD80C

MSA435

solder lands

solder resist

occupied area

tracks

MSA461

Product data sheet Rev. 04 — 22 March 2005 8 of 11

Philips Semiconductors

High-speed switching diode

BAS32L

12. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BAS32L_4 20050322 Product data sheet - 9397 750 14605 BAS32L_3 Modiﬁcations:

BAS32L_3 20020123 Product speciﬁcation - 9397 750 09264 BAS32L_2 BAS32L_2 19960910 Product speciﬁcation - 117021 BAS32L_1 BAS32L_1 19960423 Product speciﬁcation - 113051 -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• Section 4 “Marking” added

• Table 6“Thermal characteristics” R

thermal resistance from junction to solder point

th(j-sp)

thermal resistancefrom junctionto tie-point redeﬁned to

th(j-tp)

• Section 10 “Packing information” added

• Section 11 “Soldering” added

Product data sheet Rev. 04 — 22 March 2005 9 of 11

Philips Semiconductors

13. Data sheet status

BAS32L

High-speed switching diode

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains data from thepreliminary speciﬁcation. Supplementary datawill bepublished

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

14. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date.Philips Semiconductors reserves theright to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to makechanges at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

15. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makesno representations or warrantiesthat these products are free from patent, copyright, or mask workright infringement, unless otherwise speciﬁed.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Product data sheet Rev. 04 — 22 March 2005 10 of 11

Philips Semiconductors

17. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10

14 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

15 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

16 Contact information . . . . . . . . . . . . . . . . . . . . 10

BAS32L

High-speed switching diode

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 22 March 2005

Document number: 9397 750 14605

NXP BAS 32 SMD Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Test information

9. Package outline

10. Packing information

11. Soldering

12. Revision history

13. Data sheet status

15. Disclaimers

16. Contact information

17. Contents